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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Number of Terminations | Factory Lead Time | Number of Pins | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Memory Size | Memory Type | Output Characteristics | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Alternate Memory Width | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Ready/Busy | Boot Block | Common Flash Interface | Page Size | I/O Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode |
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| MT42L64M64D2LL-18 IT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -25°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 0.8mm | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt42l64m32d1tk18itc-datasheets-5060.pdf | 216-WFBGA | 12mm | 12mm | 216 | 1 | SELF REFRESH | 1 | YES | 1.14V~1.3V | BOTTOM | 1.2V | 0.4mm | 1.3V | 1.14V | S-PBGA-B216 | 4Gb 64M x 64 | Volatile | 533MHz | DRAM | Parallel | 64MX64 | 64 | 4294967296 bit | SINGLE BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||||||||||
| M58BW16FB5ZA3F | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | FLASH - NOR | 1.6mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-m58bw16fb5za3f-datasheets-5086.pdf | 80-LBGA | 12mm | 80 | 80 | 16 Mb | EAR99 | No | 8542.32.00.51 | 1 | 50mA | e1 | TIN SILVER COPPER | 2.5V~3.3V | BOTTOM | 260 | 2.7V | 1mm | 80 | 3.3V | 2.5V | 30 | 2.5/3.33/3.3V | AEC-Q100 | 16Mb 512K x 32 | Non-Volatile | 3.3V | 19b | FLASH | Parallel | 512KX32 | 32 | 55ns | 0.00015A | 32b | 55 ns | Asynchronous | NO | NO | YES | 831 | 2K16K | BOTTOM | YES | |||||||||||||||||||||||||||||||
| DS1220Y-120+ | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 0°C~70°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds1220y150-datasheets-3431.pdf | 24-DIP Module (0.600, 15.24mm) | 24 | yes | EAR99 | 10 YEAR DATA RETENTION | 8542.32.00.41 | 1 | e3 | MATTE TIN | NO | 4.5V~5.5V | DUAL | NOT SPECIFIED | 5V | 2.54mm | 24 | 5.5V | 4.5V | NOT SPECIFIED | SRAMs | 5V | 0.075mA | Not Qualified | R-XDMA-P24 | 16Kb 2K x 8 | Non-Volatile | NVSRAM | Parallel | 2KX8 | 8 | 120ns | 16384 bit | 0.004A | 120 ns | ||||||||||||||||||||||||||||||||||||||||
| MT42L16M32D1U67MWC2 | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M29F160FB5KN3E2 TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F256G08EECBBJ4-6:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/micron-mt29f256g08eecbbj46b-datasheets-4168.pdf | 132-VBGA | 3.3V | 2.7V~3.6V | 132-VBGA (12x18) | 256Gb 32G x 8 | Non-Volatile | 167MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT42L64M32D1LF-18 IT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -25°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt42l64m32d1tk18itc-datasheets-5060.pdf | 168-TFBGA | 168 | YES | 1.14V~1.3V | BOTTOM | 0.5mm | 1.21.8V | 0.22mA | Not Qualified | S-PBGA-B168 | 2Gb 64M x 32 | Volatile | 3-STATE | 533MHz | DRAM | Parallel | 2147483648 bit | 0.000025A | 5.5 ns | COMMON | 8192 | 4816 | 4816 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDFP112A3PB-JD-F-R TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | 1.14V~1.95V | 24Gb 192M x 128 | Volatile | 933MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F256G08CECBBH6-6R:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 152-VBGA | 3.3V | 12 Weeks | 2.7V~3.6V | 152-VBGA (14x18) | 256Gb 32G x 8 | Non-Volatile | 167MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53B512M32D2GZ-062 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 200-WFBGA (11x14.5) | 16Gb 512M x 32 | Volatile | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT25TL256HAA1ESF-0AAT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt25tl256bba8esf0aattr-datasheets-0627.pdf | 16-SOIC (0.295, 7.50mm Width) | 2.7V~3.6V | 16-SOP2 | 256Mb 32M x 8 | Non-Volatile | 133MHz | FLASH | SPI | 8ms, 2.8ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53B256M32D1GZ-062 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 200-WFBGA (11x14.5) | 8Gb 256M x 32 | Volatile | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT42L64M64D2LL-18 WT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 0.8mm | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt42l64m32d1tk18itc-datasheets-5060.pdf | 216-WFBGA | 12mm | 12mm | 216 | 1 | SELF REFRESH | 1 | YES | 1.14V~1.3V | BOTTOM | 1.2V | 0.4mm | 1.3V | 1.14V | S-PBGA-B216 | 4Gb 64M x 64 | Volatile | 533MHz | DRAM | Parallel | 64MX64 | 64 | 4294967296 bit | SINGLE BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A1G4RH-075E:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | 2017 | 78-TFBGA | 1.14V~1.26V | 4Gb 1G x 4 | Volatile | 1.33GHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT25TL512HAA1ESF-0AAT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | -40°C~105°C TA | Tube | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt25tl512hba8esf0aat-datasheets-7369.pdf | 16-SOIC (0.295, 7.50mm Width) | 2.7V~3.6V | 16-SOP2 | 512Mb 64M x 8 | Non-Volatile | 133MHz | FLASH | SPI | 8ms, 2.8ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F512G08EMCBBJ5-10:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/micron-mt29f512g08emcbbj510b-datasheets-4169.pdf | 3.3V | 2.7V~3.6V | 512Gb 64G x 8 | Non-Volatile | 100MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT25TL256BAA1ESF-0AAT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | -40°C~105°C TA | Tube | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt25tl256bba8esf0aattr-datasheets-0627.pdf | 16-SOIC (0.295, 7.50mm Width) | 2.7V~3.6V | 16-SOP2 | 256Mb 32M x 8 | Non-Volatile | 133MHz | FLASH | SPI | 8ms, 2.8ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDFP112A3PB-GDTJ-F-R | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~105°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | FBGA | 1.14V~1.95V | 24Gb 192M x 128 | Volatile | 800MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDF620AAABH-GD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | FBGA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N25Q128A13E1241F TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-n25q128a13ese40g-datasheets-6647.pdf | 24-TBGA | 2.7V~3.6V | N25Q128 | 24-T-PBGA (6x8) | 128Mb 32M x 4 | Non-Volatile | 108MHz | FLASH | SPI | 8ms, 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N25Q128A13BSFH0F | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | 16 | 2.7V | 2.7V~3.6V | 16-SO | 128Mb 32M x 4 | Non-Volatile | 108MHz | FLASH | SPI | 8ms, 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDFP112A3PB-JD-F-R | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | FBGA | 1.14V~1.95V | 24Gb 192M x 128 | Volatile | 933MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F128G08EBCBBJ4-6:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/micron-mt29f128g08ebcbbj46b-datasheets-4170.pdf | 132-VBGA | 3.3V | 2.7V~3.6V | 132-VBGA (12x18) | 128Gb 16G x 8 | Non-Volatile | 166MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT42L64M32D1TK-18 IT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -25°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 0.7mm | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt42l64m32d1tk18itc-datasheets-5060.pdf | 134-WFBGA | 11.5mm | 10mm | 134 | 1 | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | YES | 1.14V~1.3V | BOTTOM | 1.2V | 0.65mm | 1.3V | 1.14V | 1.21.8V | 0.22mA | Not Qualified | R-PBGA-B134 | 2Gb 64M x 32 | Volatile | 3-STATE | 533MHz | DRAM | Parallel | 64MX32 | 32 | 2147483648 bit | 0.000025A | 5.5 ns | COMMON | 8192 | 4816 | 4816 | SINGLE BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||
| MT53B256M32D1GZ-062 AIT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 200-WFBGA (11x14.5) | 8Gb 256M x 32 | Volatile | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT38W201DAA033JZZI.X68 | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F128G08EBEBBB95A3WC1-M | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 2.7V~3.6V | 128Gb 16G x 8 | Non-Volatile | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT42L16M32D1AC-25 IT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt42l16m32d1ac25ita-datasheets-5061.pdf | 134-VFBGA | 1.14V~1.3V | 512Mb 16M x 32 | Volatile | 400MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL512P10FFI020 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GL-P | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | ASYNCHRONOUS | 1.4mm | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-s29gl512p10fair12-datasheets-9924.pdf | 64-LBGA | 13mm | 11mm | 64 | 3A991.B.1.A | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 2.7V~3.6V | BOTTOM | 260 | 3V | 1mm | 3.6V | 2.7V | 40 | 3/3.3V | 0.11mA | Not Qualified | R-PBGA-B64 | 512Mb 32M x 16 | Non-Volatile | 3V | FLASH | Parallel | 512MX1 | 1 | 100ns | 536870912 bit | 8 | 0.000005A | 100 ns | YES | YES | YES | 512 | 128K | YES | YES | 8/16words | ||||||||||||||||||||||||||||||
| MT29F512G08EMCBBJ5-6:B.001 | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 2.7V~3.6V | 512Gb 64G x 8 | Non-Volatile | 167MHz | FLASH | Parallel |
