Products
Manufacturer
RFQ
NEWS
ContactMemory(55331)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Density | Pbfree Code | Thickness | Number of Ports | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Temperature Grade | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Memory Size | Memory Type | Output Characteristics | Access Time | Address Bus Width | Organization | Memory Width | Memory Density | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | I/O Type | Standby Voltage-Min | Output Enable |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 71V3577S80BG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 70°C | 0°C | CMOS | 100MHz | 2.36mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v3577s80bg8-datasheets-8744.pdf | BGA | 14mm | 22mm | 3.3V | Contains Lead | 119 | 7 Weeks | 3.465V | 3.135V | 119 | Parallel | 4.5 Mb | no | 2.15mm | 1 | FLOW-THROUGH ARCHITECTURE | No | 1 | 200mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 119 | COMMERCIAL | 20 | SRAMs | RAM, SRAM | 3-STATE | 8 ns | 17b | 0.03A | 36b | Synchronous | COMMON | ||||||||||||||||||||||
| IDT6116SA25SO | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | Rail/Tube | 1 (Unlimited) | 70°C | 0°C | CMOS | 2.65mm | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt6116sa25so-datasheets-8700.pdf | SOIC | 5V | 24 | 5.5V | 4.5V | 24 | Parallel | 16 kb | 1 | EAR99 | 1 | 100mA | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 225 | 5V | 24 | COMMERCIAL | 30 | SRAMs | 5V | Not Qualified | RAM, SRAM - Asynchronous | 3-STATE | 25 ns | 11b | 2KX8 | 8 | 0.002A | 8b | Asynchronous | COMMON | YES | ||||||||||||||||||||||||||
| 71421LA20JG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | 70°C | 0°C | CMOS | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71421la20jg8-datasheets-8681.pdf | PLCC | 19mm | 19mm | 5V | Lead Free | 52 | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 16 kb | yes | 3.63mm | 2 | EAR99 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | No | 1 | 200mA | e3 | Matte Tin (Sn) - annealed | QUAD | J BEND | 260 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 2kB | RAM, SDR, SRAM | 3-STATE | 20 ns | 22b | 0.0015A | 8b | Asynchronous | COMMON | 2V | ||||||||||||||||||||||
| IDT6116SA20SOI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | 85°C | -40°C | CMOS | 2.65mm | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt6116sa20soi-datasheets-8668.pdf | SOIC | 15.4mm | 7.5mm | 24 | Parallel | EAR99 | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 225 | 5V | 1.27mm | 24 | INDUSTRIAL | 5.5V | 4.5V | 30 | SRAMs | 5V | 0.13mA | Not Qualified | R-PDSO-G24 | RAM, SRAM - Asynchronous | 3-STATE | 2KX8 | 8 | 16384 bit | 0.002A | 20 ns | COMMON | 4.5V | |||||||||||||||||||||||||||
| IDT71P79804S250BQG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 70°C | 0°C | 250MHz | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71p79804s250bqg8-datasheets-8648.pdf | 165 | Parallel | DDR, RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT71V416L15YI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | Tape and Reel | 3 (168 Hours) | 85°C | -40°C | CMOS | 3.683mm | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v416l15yi8-datasheets-8618.pdf | 28.575mm | 3.3V | 44 | 3.6V | 3V | 44 | Parallel | 4 Mb | no | 1 | not_compliant | 1 | 160mA | e0 | DUAL | J BEND | 225 | 3.3V | 44 | INDUSTRIAL | 30 | SRAMs | Not Qualified | RAM, SRAM - Asynchronous | 3-STATE | 15 ns | 18b | 16 | 16b | Asynchronous | COMMON | 3V | |||||||||||||||||||||||||||||
| 71421LA20JG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | 70°C | 0°C | CMOS | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71421la20jg-datasheets-8608.pdf | PLCC | 19mm | 19mm | 5V | Lead Free | 52 | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 16 kb | yes | 3.63mm | 2 | EAR99 | AUTOMATIC POWER DOWN | No | 1 | 200mA | e3 | Matte Tin (Sn) - annealed | QUAD | J BEND | 260 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 2kB | RAM, SDR, SRAM | 3-STATE | 20 ns | 22b | 0.0015A | 8b | Asynchronous | COMMON | 2V | ||||||||||||||||||||||
| 70V38L20PF | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 1.6mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v38l20pf-datasheets-8556.pdf | TQFP | 14mm | 14mm | 3.3V | Contains Lead | 100 | 7 Weeks | 3.6V | 3V | 100 | Parallel | 1.1 Mb | no | 1.4mm | 2 | No | 1 | 205mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 0.5mm | 100 | COMMERCIAL | 20 | SRAMs | 128kB | RAM, SDR, SRAM | 3-STATE | 20 ns | 32b | 64KX18 | 0.003A | 18b | Asynchronous | COMMON | 3V | |||||||||||||||||||||
| IDT71P79804S250BQG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 70°C | 0°C | 250MHz | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71p79804s250bqg-datasheets-8525.pdf | 165 | Parallel | DDR, RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V321L25TFG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 3 (168 Hours) | 70°C | 0°C | CMOS | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v321l25tfg-datasheets-8514.pdf | LQFP | 10mm | 10mm | 3.3V | Lead Free | 64 | 7 Weeks | 3.6V | 3V | 64 | Parallel | 16 kb | yes | 1.4mm | 2 | EAR99 | No | 1 | 100mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 64 | COMMERCIAL | 30 | 2kB | RAM, SDR, SRAM | 25 ns | 22b | 8b | Asynchronous | |||||||||||||||||||||||||||
| 7140SA100J | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 4.57mm | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7140sa100j-datasheets-8490.pdf | PLCC | 19mm | 19mm | 5V | Contains Lead | 52 | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 8 kb | no | 3.63mm | 2 | EAR99 | No | 1 | 155mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 1kB | RAM, SDR, SRAM | 3-STATE | 100 ns | 20b | 1KX8 | 0.015A | 8b | Asynchronous | COMMON | ||||||||||||||||||||||
| IDT71P79804S167BQI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 3 (168 Hours) | 85°C | -40°C | CMOS | 167MHz | SYNCHRONOUS | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71p79804s167bqi8-datasheets-8445.pdf | 165 | 165 | Parallel | not_compliant | e0 | Tin/Lead (Sn63Pb37) | YES | BOTTOM | BALL | 1mm | SRAMs | 1.5/1.81.8V | 0.7mA | Not Qualified | DDR, RAM, SRAM | 3-STATE | 1MX18 | 18 | 18874368 bit | 0.335A | 0.5 ns | SEPARATE | 1.7V | ||||||||||||||||||||||||||||||||||||||
| 70V9089S12PF | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 70°C | 0°C | 33.3MHz | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v9089s12pf-datasheets-8426.pdf | TQFP | 14mm | 14mm | 3.3V | Contains Lead | 7 Weeks | 3.6V | 3V | 100 | Parallel | 512 kb | no | 1.4mm | 2 | No | 240mA | 100 | RAM, SRAM | 25 ns | 32b | 8b | Synchronous | |||||||||||||||||||||||||||||||||||||||||
| 7130LA25J8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 70°C | 0°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7130la25j8-datasheets-8416.pdf | PLCC | 19mm | 19mm | 5V | Contains Lead | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 8 kb | 3.63mm | 2 | No | 170mA | 1kB | RAM, SDR, SRAM | 25 ns | 20b | 8b | Asynchronous | ||||||||||||||||||||||||||||||||||||||||||
| 7140LA20JG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 1 (Unlimited) | 70°C | 0°C | CMOS | 4.57mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7140la20jg8-datasheets-8402.pdf | PLCC | 19mm | 19mm | 5V | Lead Free | 52 | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 8 kb | yes | 3.63mm | 2 | EAR99 | No | 1 | 200mA | e3 | Matte Tin (Sn) - annealed | QUAD | J BEND | 260 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 1kB | RAM, SDR, SRAM | 3-STATE | 20 ns | 20b | 1KX8 | 0.0015A | 8b | Asynchronous | COMMON | 2V | ||||||||||||||||||||
| X28HC256JIZ-12T1 | Intersil (Renesas Electronics America) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 85°C | -40°C | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/intersil-x28hc256jiz12t1-datasheets-8347.pdf | PLCC | 5V | 21 Weeks | 32 | Parallel | 256 kb | No | 120 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7130SA25J8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 4.57mm | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7130sa25j8-datasheets-8321.pdf | PLCC | 19mm | 19mm | 5V | Contains Lead | 52 | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 8 kb | no | 3.63mm | 2 | EAR99 | No | 1 | 220mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 1kB | RAM, SDR, SRAM | 3-STATE | 25 ns | 20b | 1KX8 | 0.015A | 8b | Asynchronous | COMMON | ||||||||||||||||||||||
| IDT71P79804S167BQI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | 85°C | -40°C | CMOS | 167MHz | SYNCHRONOUS | 1.2mm | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71p79804s167bqi-datasheets-8322.pdf | FBGA | 15mm | 13mm | 165 | 165 | Parallel | 3A991.B.2.A | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | YES | BOTTOM | BALL | 225 | 1.8V | 1mm | 165 | INDUSTRIAL | 1.9V | 1.7V | 20 | SRAMs | 1.5/1.81.8V | 0.7mA | Not Qualified | DDR, RAM, SRAM | 3-STATE | 1MX18 | 18 | 18874368 bit | 0.335A | 0.5 ns | SEPARATE | 1.7V | ||||||||||||||||||||||||||
| 7015L12J8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 70°C | 0°C | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7015l12j8-datasheets-8306.pdf | PLCC | 24mm | 24mm | 5V | Contains Lead | 7 Weeks | 5.5V | 4.5V | 68 | Parallel | 72 kb | no | 3.63mm | 2 | EAR99 | 275mA | 68 | 9kB | RAM, SDR, SRAM | 12 ns | 26b | 9b | Asynchronous | |||||||||||||||||||||||||||||||||||||||||
| TH58NVG2S3HTAI0 | Toshiba |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 85°C | -40°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshiba-th58nvg2s3htai0-datasheets-8275.pdf | TFSOP | 12 Weeks | Parallel, Serial | yes | unknown | EEPROM, NAND | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7140LA20JG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 70°C | 0°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7140la20jg-datasheets-8276.pdf | PLCC | 19mm | 19mm | 5V | Lead Free | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 8 kb | 3.63mm | 2 | No | 200mA | 1kB | RAM, SDR, SRAM | 20 ns | 20b | 8b | Asynchronous | |||||||||||||||||||||||||||||||||||||||||||
| IDT71P74804S250BQG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 70°C | 0°C | 250MHz | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71p74804s250bqg8-datasheets-8242.pdf | 165 | Parallel | QDR, RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70V24S55J8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | 70°C | 0°C | CMOS | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v24s55j8-datasheets-8229.pdf | PLCC | 29.21mm | 29.21mm | 3.3V | Contains Lead | 84 | 7 Weeks | 3.6V | 3V | 84 | Parallel | 64 kb | no | 3.63mm | 2 | EAR99 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | No | 1 | 180mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 84 | COMMERCIAL | SRAMs | 8kB | RAM, SDR, SRAM | 3-STATE | 55 ns | 24b | 4KX16 | 0.005A | 16b | Asynchronous | COMMON | 3V | ||||||||||||||||||||||
| IDT71016S12PHGI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | Rail/Tube | 3 (168 Hours) | 85°C | -40°C | CMOS | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71016s12phgi-datasheets-8222.pdf | TSOP | 5V | 44 | 5.5V | 4.5V | 44 | Parallel | 1 Mb | yes | 1 | unknown | 1 | 210mA | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 5V | 0.8mm | 44 | INDUSTRIAL | 30 | SRAMs | 5V | Not Qualified | RAM, SRAM - Asynchronous | 3-STATE | 12 ns | 16b | 16 | 16b | Asynchronous | COMMON | ||||||||||||||||||||||||||||
| IDT71V416L15Y8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 3 (168 Hours) | 70°C | 0°C | CMOS | 3.683mm | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v416l15y8-datasheets-8215.pdf | 28.575mm | 10.16mm | 44 | 44 | Parallel | no | 3A991.B.2.A | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | YES | DUAL | J BEND | 225 | 3.3V | 1.27mm | 44 | COMMERCIAL | 3.6V | 3V | 30 | SRAMs | 3.3V | 0.16mA | Not Qualified | RAM, SRAM - Asynchronous | 3-STATE | 256KX16 | 16 | 4194304 bit | 0.01A | 15 ns | COMMON | 3V | ||||||||||||||||||||||||||
| 71V30L55TF8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 1.6mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v30l55tf8-datasheets-8209.pdf | LQFP | 10mm | 10mm | 3.3V | Contains Lead | 64 | 7 Weeks | 3.6V | 3V | 64 | Parallel | 8 kb | no | 1.4mm | 2 | EAR99 | BATTERY BACKUP OPERATION | No | 1 | 105mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 0.5mm | 64 | COMMERCIAL | 20 | SRAMs | 1kB | RAM, SDR, SRAM | 3-STATE | 55 ns | 10b | 1KX8 | 0.003A | 8b | Asynchronous | COMMON | 3V | |||||||||||||||||||
| IDT6116SA45TPGI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Through Hole | Rail/Tube | 85°C | -40°C | CMOS | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt6116sa45tpgi-datasheets-8206.pdf | PDIP | 5V | 24 | 5.5V | 4.5V | 24 | Parallel | 16 kb | 1 | EAR99 | 1 | 100mA | e3 | MATTE TIN | DUAL | 260 | 5V | 2.54mm | 24 | INDUSTRIAL | 30 | SRAMs | 5V | Not Qualified | RAM, SRAM - Asynchronous | 3-STATE | 45 ns | 11b | 2KX8 | 8 | 0.002A | 8b | Asynchronous | COMMON | |||||||||||||||||||||||||||||
| 71V65603S133BGI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 85°C | -40°C | CMOS | 133MHz | 2.36mm | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v65603s133bgi8-datasheets-8159.pdf | BGA | 14mm | 22mm | 3.3V | Contains Lead | 119 | 7 Weeks | 3.465V | 3.135V | 119 | Parallel | 9 Mb | no | 2.15mm | 1 | PIPELINED ARCHITECTURE | No | 1 | 320mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 119 | INDUSTRIAL | 20 | SRAMs | RAM, SRAM | 3-STATE | 4.2 ns | 18b | 256KX36 | 0.06A | 36b | Synchronous | COMMON | |||||||||||||||||||||
| 71321LA20PFG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 70°C | 0°C | CMOS | 1.6mm | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71321la20pfg8-datasheets-8158.pdf | TQFP | 14mm | 14mm | 5V | Lead Free | 64 | 7 Weeks | 5.5V | 4.5V | 64 | Parallel | 16 kb | yes | 1.4mm | 2 | EAR99 | AUTOMATIC POWER DOWN | No | 1 | e3 | Matte Tin (Sn) - annealed | YES | QUAD | GULL WING | 260 | 5V | 0.8mm | 64 | COMMERCIAL | 30 | SRAMs | 5V | 2kB | RAM, SDR, SRAM | 3-STATE | 20 ns | 22b | 0.0015A | COMMON | 2V | ||||||||||||||||||||||
| 71V67803S133BQG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel | 3 (168 Hours) | 70°C | 0°C | CMOS | 133MHz | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v67803s133bqg8-datasheets-8139.pdf | 15mm | 13mm | 3.3V | Lead Free | 165 | 7 Weeks | 165 | Parallel | 9 Mb | yes | 1.2mm | 1 | PIPELINED ARCHITECTURE | No | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | BALL | 260 | 3.3V | 165 | COMMERCIAL | 3.465V | 30 | SRAMs | 0.26mA | RAM, SRAM | 3-STATE | 19b | 0.05A | 4.2 ns | COMMON |
