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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Nominal Input Voltage | Current | Reach Compliance Code | Number of Functions | Power Rating | Max Input Voltage | JESD-609 Code | Feature | Terminal Finish | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Max Output Current | Min Input Voltage | Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Current - Output (Max) | Power - Max | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Switching | Switch-on Time-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn On Time-Max (ton) | Rds On (Typ) | Ratio - Input:Output | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SISF20DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sisf20dnt1ge3-datasheets-5035.pdf | PowerPAK® 1212-8SCD | 14 Weeks | PowerPAK® 1212-8SCD | 60V | 5.2W Ta 69.4W Tc | 2 N-Channel (Dual) | 1290pF @ 30V | 13mOhm @ 7A, 10V | 3V @ 250μA | 14A Ta 52A Tc | 33nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM90P10-19-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum90p1019e3-datasheets-3910.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 13.6W | 1 | Other Transistors | R-PSSO-G2 | 30 ns | 720ns | 610 ns | 125 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 100V | 13.6W Ta 375W Tc | 90A | 90A | -100V | P-Channel | 12000pF @ 50V | 19m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4214DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4214ddyt1ge3-datasheets-6200.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 19.5mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | 8 | Dual | 30 | 2W | 2 | 150°C | 7 ns | 45ns | 12 ns | 15 ns | 8.5A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 7.5A | 30V | 2 N-Channel (Dual) | 660pF @ 15V | 19.5m Ω @ 8A, 10V | 2.5V @ 250μA | 22nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA448DJ-T1-GE3 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia448djt1ge3-datasheets-1655.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 13 Weeks | Unknown | 6 | EAR99 | No | 2 | Dual | 3.5W | 1 | S-PDSO-N3 | 8 ns | 30 ns | 12A | 8V | SILICON | DRAIN | SWITCHING | 400mV | 3.5W Ta 19.2W Tc | 30A | 20V | N-Channel | 1380pF @ 1V | 15m Ω @ 12.4A, 4.5V | 1V @ 250μA | 12A Tc | 35nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2323DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2323dst1e3-datasheets-7974.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 15 Weeks | 1.437803g | Unknown | 39mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 25 ns | 43ns | 43 ns | 71 ns | -4.7A | 8V | SILICON | SWITCHING | 20V | -1V | 750mW Ta | -20V | P-Channel | 1020pF @ 10V | -1 V | 39m Ω @ 4.7A, 4.5V | 1V @ 250μA | 3.7A Ta | 19nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2305ADS-T1-E3 | Vishay Siliconix | $1.28 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2305adst1ge3-datasheets-0154.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 40mOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 3 | Single | 30 | 1 | Other Transistors | 11ns | 11 ns | 22 ns | 4.1A | 8V | SILICON | SWITCHING | 960mW Ta 1.7W Tc | 5.4A | -8V | P-Channel | 740pF @ 4V | 40m Ω @ 4.1A, 4.5V | 800mV @ 250μA | 5.4A Tc | 15nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9433BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si9433bdyt1e3-datasheets-9829.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 40mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.3W | 1 | Other Transistors | 40 ns | 55ns | 55 ns | 65 ns | -6.2A | 12V | SILICON | 20V | -600mV | 1.3W Ta | 4.5A | -20V | P-Channel | 40m Ω @ 6.2A, 4.5V | 1.5V @ 250μA | 4.5A Ta | 14nC @ 4.5V | 2.7V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA453EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia453edjt1ge3-datasheets-8760.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 15 Weeks | 23.5mOhm | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | DUAL | NO LEAD | 1 | Single | 1 | S-PDSO-N3 | 25 ns | 45ns | 28 ns | 65 ns | 24A | 12V | SILICON | DRAIN | SWITCHING | 30V | 3.5W Ta 19W Tc | 80A | 5 mJ | -30V | P-Channel | 1900pF @ 15V | 18.5m Ω @ 5A, 10V | 1.4V @ 250μA | 24A Tc | 66nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7478DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7478dpt1e3-datasheets-0846.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 7.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 25 ns | 20ns | 20 ns | 115 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3V | 1.9W Ta | 60A | 60V | N-Channel | 7.5m Ω @ 20A, 10V | 3V @ 250μA | 15A Ta | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660JTXV02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | EAR99 | No | BOTTOM | WIRE | 2 | 725mW | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7489DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7489dpt1ge3-datasheets-1663.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | Single | 5.2W | 1 | 150°C | R-PDSO-F5 | 15 ns | 160ns | 100 ns | 110 ns | -28A | 20V | SILICON | DRAIN | SWITCHING | 100V | -3V | 5.2W Ta 83W Tc | 40A | -100V | P-Channel | 4600pF @ 50V | 55ns | -3 V | 41m Ω @ 7.8A, 10V | 3V @ 250μA | 28A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1004P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 15 Weeks | 14 | No | 2W | 4 | 460mA | 20V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7119DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7119dnt1ge3-datasheets-4330.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | -3.8A | 20V | SILICON | DRAIN | SWITCHING | 200V | -4V | 3.7W Ta 52W Tc | 5A | -200V | P-Channel | 666pF @ 50V | -4 V | 1.05 Ω @ 1A, 10V | 4V @ 250μA | 3.8A Tc | 25nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS330DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sis330dnt1ge3-datasheets-9599.pdf | PowerPAK® 1212-8 | 3.15mm | 1.12mm | 3.15mm | 5 | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PDSO-C5 | 16 ns | 19 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 3.7W Ta 52W Tc | 70A | 0.0056Ohm | 20 mJ | 30V | N-Channel | 1300pF @ 15V | 5.6m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002K-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-2n7002kt1ge3-datasheets-5738.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 19 Weeks | 1.437803g | Unknown | 2Ohm | 3 | yes | EAR99 | LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING | Tin | No | 3A | e3 | 60V | DUAL | GULL WING | 3 | 1 | Single | 350mW | 1 | 150°C | 25 ns | 35 ns | 190mA | 20V | SILICON | SWITCHING | 2V | 350mW Ta | 60V | N-Channel | 30pF @ 25V | 2 V | 2 Ω @ 500mA, 10V | 2.5V @ 250μA | 300mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA439EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia439edjt1ge3-datasheets-1696.pdf | PowerPAK® SC-70-6 | 3 | 25 Weeks | yes | EAR99 | No | DUAL | Single | 19W | 1 | S-PDSO-N3 | 20ns | 25 ns | 95 ns | 28A | 8V | SILICON | DRAIN | SWITCHING | 20V | 3.5W Ta 19W Tc | 60A | 0.018Ohm | 5.8 mJ | -20V | P-Channel | 2410pF @ 10V | 16.5m Ω @ 5A, 4.5V | 1V @ 250μA | 28A Tc | 69nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4848DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si4848dyt1e3-datasheets-7754.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 85mOhm | 8 | yes | EAR99 | Tin | unknown | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Powers | Not Qualified | 150°C | 9 ns | 10ns | 10 ns | 24 ns | 3.7A | 20V | SILICON | 2V | 1.5W Ta | 2.7A | 150V | N-Channel | 2 V | 85m Ω @ 3.5A, 10V | 2V @ 250μA (Min) | 2.7A Ta | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110N03-04P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0304pe3-datasheets-9890.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 12ns | 10 ns | 40 ns | 110A | 20V | SILICON | SWITCHING | 1V | 3.75W Ta 120W Tc | 0.0042Ohm | 30V | N-Channel | 5100pF @ 25V | 4.2m Ω @ 20A, 10V | 3V @ 250μA | 110A Tc | 60nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4401BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4401bdyt1e3-datasheets-8750.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 14MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 150°C | 16 ns | 15ns | 15 ns | 97 ns | -10.5A | 20V | SILICON | 40V | -1V | 1.5W Ta | -40V | P-Channel | 14m Ω @ 10.5A, 10V | 3V @ 250μA | 8.7A Ta | 55nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4128BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4128bdyt1ge3-datasheets-2640.pdf | SOIC | 13 Weeks | 8 | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7617DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7617dnt1ge3-datasheets-1347.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 5 | 14 Weeks | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | 150°C | S-XDSO-C5 | 11 ns | 43ns | 11 ns | 32 ns | -35A | 25V | SILICON | DRAIN | SWITCHING | 30V | -2.5V | 3.7W Ta 52W Tc | 60A | 42 mJ | -30V | P-Channel | 1800pF @ 15V | 12.3m Ω @ 13.9A, 10V | 2.5V @ 250μA | 35A Tc | 59nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS626DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis626dnt1ge3-datasheets-3630.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 25V | 52W Tc | N-Channel | 1925pF @ 15V | 9mOhm @ 10A, 10V | 1.4V @ 250μA | 16A Tc | 60nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR422DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sir422dpt1ge3-datasheets-3469.pdf | PowerPAK® SO-8 | 5.969mm | 1.12mm | 5.0038mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 6.6mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Powers | 150°C | R-XDSO-C5 | 19 ns | 84ns | 11 ns | 28 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 5W Ta 34.7W Tc | 20.5A | 70A | 45 mJ | 40V | N-Channel | 1785pF @ 20V | 1.2 V | 6.6m Ω @ 20A, 10V | 2.5V @ 250μA | 40A Tc | 48nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32401ADNP-T1GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Digi-Reel® | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sip32401adnpt1ge4-datasheets-2790.pdf | 4-UFDFN Exposed Pad | 1.25mm | 600μm | 1.65mm | 4 | 16 Weeks | 50.008559mg | Unknown | 72mOhm | 4 | On/Off | No | 5.5V | 2.4A | 1 | 324mW | Slew Rate Controlled | 5.5V | 324mW | DUAL | 0.5mm | SIP3240*A | 1 | AUDIO/VIDEO SWITCH | 324mW | 2.4A | N-Channel | 1.1V~5.5V | 3.8 ms | 1 μs | 1 | General Purpose | High Side | Reverse Current | BREAK-BEFORE-MAKE | 3800000ns | Not Required | 62m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2369DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2369dst1ge3-datasheets-6101.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | 3 | 14 Weeks | No SVHC | 3 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | 30 | 1.25W | 1 | 150°C | 13 ns | 38 ns | -5.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -1.2V | 1.25W Ta 2.5W Tc | 7.6A | 0.029Ohm | -30V | P-Channel | 1295pF @ 15V | 29m Ω @ 5.4A, 10V | 2.5V @ 250μA | 7.6A Tc | 36nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3861BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si3861bdvt1e3-datasheets-2131.pdf | 2.3A | SOT-23-6 Thin, TSOT-23-6 | 20V | Lead Free | Unknown | 115mOhm | 6 | On/Off | No | 20V | Slew Rate Controlled | 830mW | SI3861 | 830mW | 6-TSOP | 2.3A | 4.5V | 2.3A | P-Channel | 4.5V~20V | 2.3A | 20V | 1 | General Purpose | High Side | 2.3A | 60mOhm | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1050X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1050xt1ge3-datasheets-6858.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | 6 | 14 Weeks | 32.006612mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | 1 | Single | 40 | 1 | FET General Purpose Power | 6.8 ns | 35ns | 35 ns | 26 ns | 1.34A | 5V | SILICON | SWITCHING | 8V | 8V | 236mW Ta | 6A | N-Channel | 585pF @ 4V | 5 V | 86m Ω @ 1.34A, 4.5V | 900mV @ 250μA | 1.34A Ta | 11.6nC @ 5V | 1.5V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32411DR-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sip32411drt1ge3-datasheets-9261.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 28.009329mg | Unknown | 120mOhm | 6 | On/Off | yes | No | 5.5V | 1 | e3 | Load Discharge, Slew Rate Controlled | Matte Tin (Sn) | 230mW | DUAL | GULL WING | 260 | 5V | SIP32411 | 6 | 1 | SPST | 40 | 230mW | 2A | 1.8A | N-Channel | 1.1V~5.5V | 210 μs | 1 μs | 1 | General Purpose | High Side | Reverse Current | 220000ns | Not Required | 101m Ω | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1062X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1062xt1ge3-datasheets-6415.pdf | SC-89, SOT-490 | Lead Free | 3 | 14 Weeks | 29.993795mg | No SVHC | 420mOhm | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | FLAT | 1 | Single | 220mW | 1 | 2 ns | 14ns | 11 ns | 16 ns | 530mA | 8V | SILICON | SWITCHING | 1V | 220mW Ta | 20V | N-Channel | 43pF @ 10V | 420m Ω @ 500mA, 4.5V | 1V @ 250μA | 2.7nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1867DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1867dlt1e3-datasheets-9944.pdf | 6-TSSOP, SC-88, SOT-363 | On/Off | unknown | NOT SPECIFIED | SI1867 | NOT SPECIFIED | P-Channel | 1.8V~8V | 1 | General Purpose | High Side | 600mA | 480m Ω | 1:1 |
