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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4946CDY-T1-GE3 | Vishay Siliconix | $13.64 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4946cdyt1ge3-datasheets-6855.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 14 Weeks | 2 | 2W | 150°C | 8-SO | 8 ns | 16 ns | 5.2A | 20V | 60V | 2W Ta 2.8W Tc | 33mOhm | 60V | 2 N-Channel (Dual) | 350pF @ 30V | 40.9mOhm @ 5.2A, 10V | 3V @ 250μA | 5.2A Ta 6.1A Tc | 10nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4654DY-T1-E3 | Vishay Siliconix | $13.51 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4654dyt1e3-datasheets-7077.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | 30 ns | 10ns | 10 ns | 50 ns | 18.6A | 16V | SILICON | SWITCHING | 2.5W Ta 5.9W Tc | 0.004Ohm | 25V | N-Channel | 3770pF @ 15V | 4m Ω @ 15A, 10V | 2.5V @ 250μA | 28.6A Tc | 100nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| SQJB42EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqjb42ept1ge3-datasheets-7973.pdf | PowerPAK® SO-8 Dual | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 48W | 30A | 120A | 0.0095Ohm | 31 mJ | 2 N-Channel (Dual) | 1500pF @ 25V | 9.5m Ω @ 10A, 10V | 3.5V @ 250μA | 30A Tc | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2327DS-T1-GE3 | Vishay Siliconix | $0.61 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2327dst1e3-datasheets-8010.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | Single | 30 | 750mW | 1 | Other Transistors | -490mA | 20V | SILICON | SWITCHING | 200V | -4.5V | 750mW Ta | 2.45Ohm | -200V | P-Channel | 510pF @ 25V | -4.5 V | 2.35 Ω @ 500mA, 10V | 4.5V @ 250μA | 380mA Ta | 12nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIR770DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sir770dpt1ge3-datasheets-9461.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | 17.8W | C BEND | 260 | 8 | 2 | Dual | 40 | 3.6W | 2 | FET General Purpose Power | R-PDSO-C6 | 8 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 2.8V | 8A | 35A | 30V | 2 N-Channel (Dual) | 900pF @ 15V | 2.8 V | 21m Ω @ 8A, 10V | 2.8V @ 250μA | 21nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI4472DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4472dyt1e3-datasheets-8391.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 16 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 3.1W | 1 | 16 ns | 12ns | 7 ns | 20 ns | 7.7A | 20V | SILICON | SWITCHING | 3.1W Ta 5.9W Tc | 0.047Ohm | 150V | N-Channel | 1735pF @ 50V | 4.5 V | 45m Ω @ 5A, 10V | 4.5V @ 250μA | 7.7A Tc | 43nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SQJ202EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj202ept1ge3-datasheets-0335.pdf | PowerPAK® SO-8 Dual | Lead Free | 12 Weeks | EAR99 | unknown | 48W | NOT SPECIFIED | NOT SPECIFIED | 60A | 12V | 27W 48W | 2 N-Channel (Dual) | 975pF @ 6V | 6.5m Ω @ 15A, 10V | 2V @ 250μA | 20A 60A | 22nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1305DL-T1-GE3 | Vishay Siliconix | $0.05 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1305dlt1e3-datasheets-7851.pdf | SC-70, SOT-323 | Lead Free | 3 | 3 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 3 | 30 | 290mW | 1 | Other Transistors | 8 ns | 55ns | 12 ns | 17 ns | 860mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | 8V | 290mW Ta | 0.86A | 0.28Ohm | P-Channel | 280m Ω @ 1A, 4.5V | 450mV @ 250μA (Min) | 860mA Ta | 4nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIA928DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia928djt1ge3-datasheets-1484.pdf | PowerPAK® SC-70-6 Dual | 14 Weeks | No SVHC | 6 | EAR99 | PowerPAK SC70-6L Dual | 7.8W | NOT SPECIFIED | NOT SPECIFIED | 4.5A | 30V | 2.2V | 2 N-Channel (Dual) | 490pF @ 15V | 25m Ω @ 5A, 10V | 2.2V @ 250μA | 4.5A Tc | 4.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE854DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie854dft1ge3-datasheets-2529.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 15 ns | 10ns | 10 ns | 30 ns | 13.2A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 60A | 60A | 80 mJ | 100V | N-Channel | 3100pF @ 50V | 14.2m Ω @ 13.2A, 10V | 4.4V @ 250μA | 60A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI5922DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-si5922dut1ge3-datasheets-3546.pdf | PowerPAK® ChipFET™ Dual | 14 Weeks | No SVHC | 6 | EAR99 | 10.4W | NOT SPECIFIED | NOT SPECIFIED | 6A | 30V | 2.2V | 2 N-Channel (Dual) | 765pF @ 15V | 19.2m Ω @ 5A, 10V | 2.2V @ 250μA | 6A Tc | 7.1nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS414DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sis414dnt1ge3-datasheets-2688.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 15 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.4W | 1 | FET General Purpose Power | S-PDSO-C5 | 7 ns | 13ns | 8 ns | 21 ns | 20A | 12V | SILICON | DRAIN | SWITCHING | 30V | 30V | 600mV | 3.4W Ta 31W Tc | 50A | 5 mJ | N-Channel | 795pF @ 15V | 16m Ω @ 10A, 4.5V | 1.5V @ 250μA | 20A Tc | 33nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| SIA921EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia921edjt1ge3-datasheets-4545.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 750μm | 2.05mm | Lead Free | 6 | 14 Weeks | 28.009329mg | 59MOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | 7.8W | 260 | 6 | Dual | 40 | 1.9W | 2 | Other Transistors | 5 ns | 12ns | 10 ns | 25 ns | -4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 15A | -20V | 2 P-Channel (Dual) | 59m Ω @ 3.6A, 4.5V | 1.4V @ 250μA | 4.5A | 23nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SIE816DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie816dft1ge3-datasheets-3162.pdf | 10-PolarPAK® (L) | Lead Free | 7.4mOhm | 10 | No | Single | 5.2W | 1 | 10-PolarPAK® (L) | 3.1nF | 22 ns | 10ns | 10 ns | 25 ns | 19.8A | 20V | 60V | 5.2W Ta 125W Tc | 7.4mOhm | 60V | N-Channel | 3100pF @ 30V | 7.4mOhm @ 19.8A, 10V | 4.4V @ 250μA | 60A Tc | 77nC @ 10V | 7.4 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7949DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7949dpt1e3-datasheets-8969.pdf | PowerPAK® SO-8 Dual | 6 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.5W | C BEND | 260 | SI7949 | 8 | Dual | 30 | 1.5W | 2 | Other Transistors | R-XDSO-C6 | 8 ns | 9ns | 30 ns | 65 ns | -5A | 20V | SILICON | DRAIN | 60V | METAL-OXIDE SEMICONDUCTOR | -3V | 0.064Ohm | -60V | 2 P-Channel (Dual) | 64m Ω @ 5A, 10V | 3V @ 250μA | 3.2A | 40nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SIJ484DP-T1-GE3 | Vishay Siliconix | $3.26 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sij484dpt1ge3-datasheets-3219.pdf | PowerPAK® SO-8 | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | 260 | 40 | 5W | 1 | 22 ns | 13ns | 12 ns | 26 ns | 35A | 20V | 30V | 1.2V | 5W Ta 27.7W Tc | N-Channel | 1600pF @ 15V | 6.3m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7252DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-si7252dpt1ge3-datasheets-7360.pdf | PowerPAK® SO-8 Dual | 1.12mm | 6 | 14 Weeks | 506.605978mg | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 46W | C BEND | SI7252 | Dual | 3.5W | 2 | 150°C | R-PDSO-C6 | 12 ns | 12ns | 7 ns | 18 ns | 36.7A | 20V | SILICON | DRAIN | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 0.017Ohm | 100V | 2 N-Channel (Dual) | 1170pF @ 50V | 18m Ω @ 15A, 10V | 3.5V @ 250μA | 27nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SUD50P04-23-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50p0423e3-datasheets-3248.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20A | 40V | 3.1W Ta 45.4W Tc | P-Channel | 1880pF @ 20V | 23m Ω @ 15A, 10V | 2V @ 250μA | 8.2A Ta 20A Tc | 65nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL540PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irl540pbf-datasheets-9841.pdf | TO-220-3 | 10.54mm | 8.76mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 77mOhm | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | e3 | MATTE TIN | 3 | 1 | Single | 150W | 1 | 8.5 ns | 170ns | 80 ns | 35 ns | 28A | 10V | SILICON | SWITCHING | 100V | 2V | 150W Tc | TO-220AB | 260 ns | 440 mJ | N-Channel | 2200pF @ 25V | 2 V | 77m Ω @ 17A, 5V | 2V @ 250μA | 28A Tc | 64nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||
| SUD50N025-06P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n02506pe3-datasheets-3306.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 1.437803g | 1 | Single | TO-252, (D-Pak) | 2.49nF | 9 ns | 11ns | 8 ns | 24 ns | 78A | 20V | 25V | 10.7W Ta 65W Tc | 6.2mOhm | N-Channel | 2490pF @ 12V | 6.2mOhm @ 20A, 10V | 2.4V @ 250μA | 78A Tc | 66nC @ 10V | 6.2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB40EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqjb40ept1ge3-datasheets-4689.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual | 40V | 34W | 2 N-Channel (Dual) | 1900pF @ 25V | 8mOhm @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 35nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP85N02-03-E3 | Vishay Siliconix | $5.58 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup85n0203e3-datasheets-3385.pdf | TO-220-3 | 3 | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 250W | 1 | FET General Purpose Power | 20 ns | 200ns | 320 ns | 450 ns | 85A | 8V | SILICON | DRAIN | 450mV | 250W Tc | TO-220AB | 240A | 20V | N-Channel | 21250pF @ 20V | 450 mV | 3m Ω @ 30A, 4.5V | 450mV @ 2mA (Min) | 85A Tc | 200nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| SQ4946AEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sq4946aeyt1ge3-datasheets-4914.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8-SO | 60V | 4W | 33mOhm | 2 N-Channel (Dual) | 750pF @ 25V | 40mOhm @ 4.5A, 10V | 2.5V @ 250μA | 7A | 18nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP85N03-04P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup85n0304pe3-datasheets-4002.pdf | TO-220-3 | 10.4902mm | 15.494mm | 4.6482mm | Lead Free | 4.3mOhm | 3 | No | Single | 166W | 1 | TO-220AB | 4.5nF | 15 ns | 12ns | 22 ns | 50 ns | 85A | 20V | 30V | 3.75W Ta 166W Tc | 4.3mOhm | 30V | N-Channel | 4500pF @ 25V | 4.3mOhm @ 30A, 10V | 3V @ 250μA | 85A Tc | 90nC @ 10V | 4.3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI6913DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si6913dqt1ge3-datasheets-3011.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | GULL WING | 260 | SI6913 | 8 | Dual | 40 | 830mW | 2 | Other Transistors | 45 ns | 80ns | 80 ns | 130 ns | 4.9A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 2 P-Channel (Dual) | 21m Ω @ 5.8A, 4.5V | 900mV @ 400μA | 28nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SUD35N05-26L-E3 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud35n0526le3-datasheets-2955.pdf | 55V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.223mm | Lead Free | No SVHC | 20mOhm | 3 | No | Single | 50W | 1 | TO-252, (D-Pak) | 885pF | 5 ns | 18ns | 100 ns | 20 ns | 35A | 20V | 55V | 55V | 1V | 7.5W Ta 50W Tc | 20mOhm | 55V | N-Channel | 885pF @ 25V | 1 V | 20mOhm @ 20A, 10V | 1V @ 250μA (Min) | 35A Tc | 13nC @ 5V | 20 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI2333DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2333dst1e3-datasheets-8489.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 32mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 150°C | 25 ns | 45ns | 45 ns | 72 ns | -4.1A | 8V | SILICON | SWITCHING | 12V | -1V | 750mW Ta | -12V | P-Channel | 1100pF @ 6V | -1 V | 32m Ω @ 5.3A, 4.5V | 1V @ 250μA | 4.1A Ta | 18nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| SI3445ADV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3445advt1ge3-datasheets-6097.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 42mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | Single | 40 | 1.1W | 1 | Other Transistors | 260pF | 20 ns | 40ns | 60 ns | 80 ns | 4.4A | 8V | SILICON | 1.1W Ta | -8V | P-Channel | 42m Ω @ 5.8A, 4.5V | 1V @ 250μA | 4.4A Ta | 19nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI7461DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7461dpt1e3-datasheets-0011.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 14.5mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 20 ns | 20ns | 20 ns | 205 ns | -12.6A | 20V | SILICON | DRAIN | SWITCHING | 60V | -3V | 1.9W Ta | 60A | -60V | P-Channel | -3 V | 14.5m Ω @ 14.4A, 10V | 3V @ 250μA | 8.6A Ta | 190nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| 2N6660-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | 3 | 9 Weeks | Unknown | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | BOTTOM | WIRE | 260 | 2 | 1 | Single | 40 | 725mW | 1 | FET General Purpose Powers | 1.1A | 20V | SILICON | AMPLIFIER | 1.7V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | 60V | N-Channel | 50pF @ 25V | 1.7 V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V |
