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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Neg Supply Voltage-Min (Vsup) | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG641DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg641dy-datasheets-2728.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 500MHz | 6mA | 16 | 1.627801g | 18V | 10V | 15Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | DUAL | 16 | 470mW | Multiplexer or Switches | 15-3V | Not Qualified | 70 ns | 50 ns | 15V | 12V | Single | 10V | 4 | SEPARATE OUTPUT | 15Ohm | 15Ohm | BREAK-BEFORE-MAKE | NC | 3V~15V ±3V~15V | 1:1 | SPST - NO | 10nA | 12pF 12pF | 70ns, 50ns | 19pC | 1 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7456CDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si7456cdpt1ge3-datasheets-7075.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | FET General Purpose Powers | R-XDSO-C5 | 27.5A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 5W Ta 35.7W Tc | 50A | 0.0235Ohm | 100V | N-Channel | 730pF @ 50V | 1.2 V | 23.5m Ω @ 10A, 10V | 2.8V @ 250μA | 27.5A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG528AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2007 | /files/vishaysiliconix-dg529ak883-datasheets-2725.pdf | 18-CDIP (0.300, 7.62mm) | 22.86mm | 3.94mm | 7.62mm | 15V | 2.5mA | 14 Weeks | 36V | 13V | 400Ohm | 18 | 900mW | 1 | 1 | 18-CERDIP | 1.5 μs | 1 μs | 22V | 1 μs | Dual, Single | 400Ohm | 8:1 | ±15V | 1nA | 5pF 25pF | 1.5μs, 1μs | 4pC | 24Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfbc20pbf-datasheets-8092.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 4.4Ohm | 3 | Tin | 1 | Single | 50W | 1 | TO-220AB | 350pF | 10 ns | 23ns | 25 ns | 30 ns | 2.2A | 20V | 600V | 4V | 50W Tc | 4.4Ohm | 600V | N-Channel | 350pF @ 25V | 4 V | 4.4Ohm @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 18nC @ 10V | 4.4 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg442dyt1-datasheets-7418.pdf | 16-SOIC (0.154, 3.90mm Width) | 100μA | 16 | 8 Weeks | 36V | 13V | 85Ohm | 16 | no | No | 4 | 15μA | e0 | Tin/Lead (Sn/Pb) | 900mW | GULL WING | 15V | 1.27mm | 16 | 900mW | Multiplexer or Switches | 450 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 4 Ω (Max) | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z10PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9z10pbf-datasheets-8836.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 270pF | 11 ns | 63ns | 31 ns | 10 ns | 6.7A | 20V | 60V | -4V | 43W Tc | 500mOhm | P-Channel | 270pF @ 25V | 500mOhm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441AK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/vishaysiliconix-dg442dyt1-datasheets-7418.pdf | 16-CDIP (0.300, 7.62mm) | 4 | 16-CERDIP | 85Ohm | 12V ±15V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 250ns, 120ns | -1pC | 4Ohm (Max) | -100dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP35N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp35n60efge3-datasheets-9693.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 250W Tc | N-Channel | 2568pF @ 100V | 97mOhm @ 17A, 10V | 4V @ 250μA | 32A Tc | 134nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM307BCA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | CDIP | 36V | 13V | 14 | 2 | 825mW | 22V | 7V | 4 | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG039N60EF-GE3 | Vishay Siliconix | $10.17 |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg039n60efge3-datasheets-9983.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 357W Tc | N-Channel | 4323pF @ 100V | 40mOhm @ 32A, 10V | 5V @ 250μA | 61A Tc | 126nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM181BIC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 18 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP22N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihp22n60ege3-datasheets-1850.pdf | TO-220-3 | 10.51mm | 9.01mm | 4.65mm | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 180mOhm | 3 | Tin | No | 1 | Single | 227W | 1 | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 227W Tc | TO-220AB | 56A | N-Channel | 1920pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM200BCC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP35N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihp35n60ege3-datasheets-2067.pdf | TO-220-3 | 14 Weeks | 600V | 250W Tc | N-Channel | 2760pF @ 100V | 94m Ω @ 17A, 10V | 4V @ 250μA | 32A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9204201XA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | Non-RoHS Compliant | FlatPack | 16 | 44V | 13V | 1 | DUAL | NOT SPECIFIED | 15V | 16 | 8 | SINGLE-ENDED MULTIPLEXER | NOT SPECIFIED | 1 | 20V | 5V | -15V | 30mA | 100Ohm | 75 dB | 15Ohm | 225ns | 8:1 | ±15V | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP24N65E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp24n65ege3-datasheets-6695.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 19 Weeks | 6.000006g | Unknown | 145mOhm | 3 | No | 1 | Single | 250W | 1 | TO-220AB | 2.74nF | 24 ns | 84ns | 69 ns | 70 ns | 24A | 20V | 650V | 2V | 250W Tc | 145mOhm | N-Channel | 2740pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 145 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9204202EA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | 16-CDIP (0.300, 7.62mm) | 19.305mm | 16 | 12V | 2.7V | 16 | 2 | 900mW | DUAL | NOT SPECIFIED | 15V | 16 | 4 | DIFFERENTIAL MULTIPLEXER | NOT SPECIFIED | 900mW | 2 | 6.5V | 2.7V | -15V | 30mA | 8 | 100Ohm | 75 dB | 15Ohm | 150ns | -5V | 4:1 | SP4T | ±15V | 500pA | 3pF 14pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI630GPBF | Vishay Siliconix | $2.38 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli630gpbf-datasheets-3522.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 400mOhm | 3 | No | 1 | Single | TO-220-3 | 1.1nF | 8 ns | 57ns | 33 ns | 38 ns | 6.2A | 10V | 200V | 1V | 35W Tc | 400mOhm | 200V | N-Channel | 1100pF @ 25V | 400mOhm @ 3.7A, 5V | 2V @ 250μA | 6.2A Tc | 40nC @ 10V | 400 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9415DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg9415dqt1e3-datasheets-4037.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 850μm | 3mm | 5V | Lead Free | 1μA | 10 | 12 Weeks | 143.193441mg | No SVHC | 12V | 2.7V | 17Ohm | 10 | yes | No | 2 | 1μA | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3V | 0.5mm | DG9415 | 10 | 2 | 40 | 2 | 125 ns | 68 ns | Multiplexer | 128 ns | Single | 4 | 17Ohm | 17Ohm | 58 dB | 3Ohm | BREAK-BEFORE-MAKE | 75ns | 2:1 | 2.7V~12V | SPDT | 1nA | 10pF 13pF | 55ns, 40ns | 13pC | 1 Ω | -64dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI9540GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfi9540gpbf-datasheets-3946.pdf | -100V | -13A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 200MOhm | 3 | No | 1 | Single | 42W | 1 | TO-220-3 | 1.4nF | 24 ns | 110ns | 86 ns | 51 ns | -11A | 20V | 100V | -4V | 48W Tc | 200mOhm | -100V | P-Channel | 1400pF @ 25V | 200mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 61nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3157ADN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg3157bdnt1e4-datasheets-4600.pdf | 6-UFDFN | 1μA | 6 | 5.5V | 1.65V | 15Ohm | 6 | yes | No | 1 | e4 | PALLADIUM GOLD OVER NICKEL | 160mW | DUAL | 260 | 3V | 0.4mm | DG3157 | 6 | 1 | 30 | Multiplexer or Switches | 1 | 300MHz | 25 ns | 21 ns | Single | SEPARATE OUTPUT | 15Ohm | 57 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 45ns | 50ns | 2:1 | 1.65V~5.5V | SPDT | 7pF | 25ns, 21ns | 7pC | 800m Ω | -64dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG33N65E-GE3 | Vishay Siliconix | $5.78 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg33n65ege3-datasheets-4651.pdf | TO-247-3 | 18 Weeks | 3 | TO-247AC | 4.04nF | 32.4A | 650V | 4V | 313W Tc | 90mOhm | N-Channel | 4040pF @ 100V | 105mOhm @ 16.5A, 10V | 4V @ 250μA | 32.4A Tc | 173nC @ 10V | 105 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4157DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 50nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg4157dnt1e4-datasheets-4690.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 500nA | 6 | 12 Weeks | 5.5V | 1.65V | 1.2Ohm | 6 | yes | No | 1 | e3 | Matte Tin (Sn) | 250mW | DUAL | GULL WING | 260 | 3V | DG4157 | 6 | 1 | 40 | 250mW | Multiplexer or Switches | 117MHz | 55 ns | 27 ns | Single | 2 | 1 | 1.2Ohm | 31 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 30ns | 2:1 | 1.65V~5.5V | SPDT | 2nA | 20pF | 37ns, 23ns | 50pC | 120m Ω (Max) | -63dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR224PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfu224pbf-datasheets-5033.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 3.8A | 20V | 250V | 250V | 2.5W Ta 42W Tc | 400 ns | 1.1Ohm | 250V | N-Channel | 260pF @ 25V | 4 V | 1.1Ohm @ 2.3A, 10V | 4V @ 250μA | 3.8A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2004DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 20nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2005dqt1e3-datasheets-5288.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | 1μA | 139.989945mg | 5.5V | 1.8V | 2.5Ohm | 8 | No | 320mW | DG2004 | 2 | 320mW | 2 | 8-MSOP | SPST | 28 ns | 22 ns | Single | 2 | 2 | 2.5Ohm | 1:1 | 1.8V~5.5V | SPST - NC | 1nA | 51pF | 28ns, 22ns | 1pC | -67dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP50020E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup50020ege3-datasheets-7899.pdf | TO-220-3 | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 60V | 375W Tc | N-Channel | 2.4m Ω @ 30A, 10V | 4V @ 250μA | 120A Tc | 128nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2303DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2303dlt1e3-datasheets-5353.pdf | 5-TSSOP, SC-70-5, SOT-353 | 2mm | 1μA | 5 | 12 Weeks | 5.5V | 1.65V | 15Ohm | 5 | yes | No | 1 | 1μA | e3 | MATTE TIN | 250mW | DUAL | GULL WING | 260 | 1.8V | DG2303 | 5 | 1 | 40 | 250mW | Multiplexer or Switches | SPST | 4.4 ns | 14.3 ns | Single | 1 | 7Ohm | 50 dB | 1:1 | 1.65V~5.5V | SPST - NO | 10μA | 9pF | 2ns, 7.5ns | 0.5pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA15N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha15n65ege3-datasheets-8897.pdf | TO-220-3 Full Pack | 18.1mm | 18 Weeks | 1 | 34W | 150°C | 18 ns | 48 ns | 15A | 30V | 34W Tc | 650V | N-Channel | 2460pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2301DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2301dlt1e3-datasheets-5383.pdf | 5-TSSOP, SC-70-5, SOT-353 | 2mm | 1μA | 5 | 5.5V | 4V | 20Ohm | 5 | yes | No | 1 | 10nA | e3 | MATTE TIN | 250mW | DUAL | GULL WING | 260 | 5V | DG2301 | 5 | 1 | 40 | Multiplexer or Switches | 5V | 1 | SPST | 4.5 ns | 4.2 ns | Single | 7Ohm | 1:1 | 4V~5.5V | SPST - NO | 10μA | 5pF | 3.9ns, 4ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2367DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si2367dst1ge3-datasheets-1090.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 66MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 960mW | 1 | Other Transistors | 8 ns | 9ns | 9 ns | 35 ns | -3.8A | 8V | SILICON | SWITCHING | 20V | 20V | -400mV | 960mW Ta 1.7W Tc | P-Channel | 561pF @ 10V | 66m Ω @ 2.5A, 4.5V | 1V @ 250μA | 3.8A Tc | 23nC @ 8V | 1.8V 4.5V | ±8V |
