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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Voltage - Input | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Current - Output | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Main Purpose | Nominal Vgs | Board Type | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Outputs and Type | Regulator Topology | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG9432DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg9433dqt1e3-datasheets-5516.pdf | SOT-23-8 | 2.9mm | 1.2mm | 1.65mm | -1μA | 8 | 40.001177mg | 12V | 2.7V | 60Ohm | 8 | yes | unknown | 2 | e3 | Matte Tin (Sn) | 515mW | DUAL | GULL WING | 260 | 3V | 0.65mm | DG9432 | 8 | 1 | 10 | 515mW | Multiplexer or Switches | Not Qualified | SPST | 35 ns | 18 ns | Single | 2 | SEPARATE OUTPUT | 30Ohm | 77 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 100ns | 1:1 | 2.7V~12V | SPST - NC | 1nA | 7.5pF 7.8pF | 35ns, 18ns | 0.36pC | 300m Ω | -96dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4447DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4447dyt1e3-datasheets-8864.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.1W | 1 | Other Transistors | 8 ns | 12ns | 38 ns | 74 ns | -3.3A | 16V | SILICON | SWITCHING | 40V | 1.1W Ta | 30A | 0.054Ohm | -40V | P-Channel | 805pF @ 20V | 72m Ω @ 4.5A, 15V | 2.2V @ 250μA | 3.3A Ta | 14nC @ 4.5V | 15V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9052DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg9052dqt1e3-datasheets-7329.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.07mm | 920μm | 4.4mm | 3V | 1μA | 16 | 172.98879mg | 12V | 2.7V | 40Ohm | 16 | yes | No | 1 | 1μA | e3 | Matte Tin (Sn) | 925mW | GULL WING | 260 | 5V | 0.65mm | DG9052 | 16 | 4 | 40 | 925mW | 2 | 90 ns | 30 ns | 6V | Multiplexer | 80 ns | Dual, Single | 2.7V | -5V | 8 | 40Ohm | 79 dB | 5Ohm | 50ns | 70ns | 2.7V~12V ±2.7V~6V | 4:1 | SP4T | 1nA | 4pF 8pF | 35ns, 30ns | 38pC | 5 Ω (Max) | -83dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4401FDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4401fdyt1ge3-datasheets-0301.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 40V | 2.5W Ta 5W Tc | P-Channel | 4000pF @ 20V | 14.2mOhm @ 10A, 10V | 2.3V @ 250μA | 9.9A Ta 14A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32452EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32453dbt2ge1-datasheets-8330.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32452 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3473DDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-si3473ddvt1ge3-datasheets-2033.pdf | SOT-23-6 Thin, TSOT-23-6 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 12V | 3.6W Tc | P-Channel | 1975pF @ 6V | 17.8m Ω @ 8.7A, 4.5V | 1V @ 250μA | 8A Tc | 57nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32458EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32458dbt2ge1-datasheets-8211.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32458 | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4378DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4378dyt1ge3-datasheets-6038.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 15 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | 85 ns | 65ns | 65 ns | 140 ns | 25A | 12V | SILICON | SWITCHING | 1.8V | 1.6W Ta | 0.0027Ohm | 20V | N-Channel | 8500pF @ 10V | 2.7m Ω @ 25A, 4.5V | 1.8V @ 250μA | 19A Ta | 55nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC464EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sic464edt1ge3-datasheets-4714.pdf | 17 Weeks | 4.5V~60V | SIC464 | 2A | Board(s) | DC/DC, Step Down | Fully Populated | 1, Non-Isolated | Buck | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4184EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq4184eyt1ge3-datasheets-6905.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 1 | 8-SOIC | 15 ns | 46ns | 15 ns | 56 ns | 29A | 20V | 40V | 7.1W Tc | N-Channel | 5400pF @ 20V | 4.6mOhm @ 14A, 10V | 2.5V @ 250μA | 29A Tc | 110nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC438BEVB-B | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 9 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD30N05-20L_GE3 | Vishay Siliconix | $1.38 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd30n0520lge3-datasheets-7318.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | Unknown | 3 | No | 50W | 1 | TO-252AA | 1.175nF | 7 ns | 10ns | 5 ns | 18 ns | 30A | 20V | 55V | 2V | 50W Tc | 16mOhm | N-Channel | 1175pF @ 25V | 20mOhm @ 20A, 10V | 2.5V @ 250μA | 30A Tc | 18nC @ 5V | 20 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V30365-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9214TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfr9214trpbf-datasheets-8548.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 50W | 1 | D-Pak | 220pF | 11 ns | 14ns | 17 ns | 20 ns | -2.7A | 20V | 250V | 50W Tc | 3Ohm | -250V | P-Channel | 220pF @ 25V | 3Ohm @ 1.7A, 10V | 4V @ 250μA | 2.7A Tc | 14nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP23N50LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp23n50l-datasheets-5502.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 235mOhm | 3 | No | 1 | Single | 370W | 1 | TO-247-3 | 3.6nF | 26 ns | 94ns | 45 ns | 53 ns | 23A | 30V | 500V | 5V | 370W Tc | 190mOhm | 500V | N-Channel | 3600pF @ 25V | 5 V | 235mOhm @ 14A, 10V | 5V @ 250μA | 23A Tc | 150nC @ 10V | 235 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA50DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira50dpt1re3-datasheets-8578.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | S17-0173-Single | 1 | 6.25W | 150°C | PowerPAK® SO-8 | 19 ns | 53 ns | 62.5A | 40V | 6.25W Ta 100W Tc | 860μOhm | 40V | N-Channel | 8445pF @ 20V | 1mOhm @ 20A, 10V | 2.2V @ 250μA | 62.5A Ta 100A Tc | 194nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUC85N15-19DWF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM70090E-GE3 | Vishay Siliconix | $8.89 |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum70090ege3-datasheets-9231.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 1.95nF | 50A | 100V | 125W Tc | N-Channel | 1950pF @ 50V | 8.9mOhm @ 20A, 10V | 4V @ 250μA | 50A Tc | 50nC @ 10V | 8.9 mΩ | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP440PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-irfp440-datasheets-7443.pdf | 500V | 8.8A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 850mOhm | 3 | 5.45mm | No | 1 | Single | 150W | 1 | TO-247-3 | 1.3nF | 14 ns | 23ns | 20 ns | 49 ns | 8.8A | 20V | 500V | 500V | 4V | 150W Tc | 850mOhm | 500V | N-Channel | 1300pF @ 25V | 4 V | 850mOhm @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 63nC @ 10V | 850 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJ482DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sij482dpt1ge3-datasheets-9678.pdf | PowerPAK® SO-8 | 5mm | 1.14mm | 4.47mm | Lead Free | 14 Weeks | Unknown | 9.5MOhm | 5 | EAR99 | No | Single | 69.4W | 1 | FET General Purpose Powers | 28 ns | 72 ns | 60A | 20V | 1.5V | 5W Ta 69.4W Tc | 80V | N-Channel | 2425pF @ 40V | 6.2m Ω @ 20A, 10V | 2.7V @ 250μA | 60A Tc | 71nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA4N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha4n80ege3-datasheets-3247.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 800V | 69W Tc | 1.1Ohm | N-Channel | 622pF @ 100V | 1.27Ohm @ 2A, 10V | 4V @ 250μA | 4.3A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW30N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihw30n60ege3-datasheets-1275.pdf | TO-3P-3 Full Pack | 3 | 19 Weeks | 38.000013g | Unknown | 3 | yes | No | 1 | Single | 1 | FET General Purpose Powers | 40 ns | 65ns | 75 ns | 95 ns | 29A | 4V | SILICON | SWITCHING | 2V | 250W Tc | TO-247AD | 65A | 690 mJ | 600V | N-Channel | 2600pF @ 100V | 125m Ω @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIBF20GPBF | Vishay Siliconix | $0.43 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfibf20g-datasheets-8627.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 8Ohm | 3 | No | 1 | Single | 30W | 1 | TO-220-3 | 490pF | 8 ns | 21ns | 32 ns | 56 ns | 1.2A | 20V | 900V | 4V | 30W Tc | 8Ohm | N-Channel | 490pF @ 25V | 4 V | 8Ohm @ 720mA, 10V | 4V @ 250μA | 1.2A Tc | 38nC @ 10V | 8 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA04EP-T1_GE3 | Vishay Siliconix | $1.00 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqja04ept1ge3-datasheets-2675.pdf | PowerPAK® SO-8 | 1.267mm | 14 Weeks | 1 | 68W | 175°C | PowerPAK® SO-8 | 15 ns | 25 ns | 75A | 20V | 60V | 68W Tc | 5.1mOhm | 60V | N-Channel | 3500pF @ 25V | 6.2mOhm @ 10A, 10V | 3.5V @ 250μA | 75A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP240PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp240-datasheets-7426.pdf | 200V | 20A | TO-247-3 | 15.87mm | 25.11mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 180mOhm | 3 | 5.45mm | No | 1 | Single | 150W | 1 | 150°C | TO-247-3 | 1.3nF | 14 ns | 51ns | 36 ns | 45 ns | 20A | 20V | 200V | 200V | 4V | 150W Tc | 610 ns | 180mOhm | 200V | N-Channel | 1300pF @ 25V | 4 V | 180mOhm @ 12A, 10V | 4V @ 250μA | 20A Tc | 70nC @ 10V | 180 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ411EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj411ept1ge3-datasheets-3629.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | 1 | 68W | 1 | 175°C | R-PSSO-G4 | 32 ns | 198 ns | -60A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 12V | 68W Tc | 52A | 0.0058Ohm | 45 mJ | -12V | P-Channel | 9100pF @ 6V | 5.8m Ω @ 15A, 4.5V | 1.5V @ 250μA | 60A Tc | 150nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4436DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4436dyt1ge3-datasheets-6502.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 36mOhm | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Powers | Not Qualified | 10 ns | 15ns | 10 ns | 25 ns | 8A | 20V | SILICON | SWITCHING | 60V | 60V | 1.5V | 2.5W Ta 5W Tc | 8A | 25A | N-Channel | 1100pF @ 30V | 36m Ω @ 4.6A, 10V | 2.5V @ 250μA | 8A Tc | 32nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM100P10-19L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm100p1019lge3-datasheets-5622.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 375W Tc | 93A | 200A | 0.019Ohm | 245 mJ | P-Channel | 14100pF @ 25V | 19m Ω @ 30A, 10V | 2.5V @ 250μA | 93A Tc | 350nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4101DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4101dyt1ge3-datasheets-9954.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6W | 1 | 9ns | 11 ns | 80 ns | 25.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 6W Tc | MS-012AA | 0.006Ohm | -30V | P-Channel | 8190pF @ 15V | 6m Ω @ 15A, 10V | 2.5V @ 250μA | 25.7A Tc | 203nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7852DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7852dpt1e3-datasheets-0287.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 2.32nF | 17 ns | 11ns | 31 ns | 40 ns | 7.6A | 20V | SILICON | DRAIN | SWITCHING | 2V | 1.9W Ta | 50A | 80V | N-Channel | 16.5m Ω @ 10A, 10V | 2V @ 250μA (Min) | 7.6A Ta | 41nC @ 10V | 6V 10V | ±20V |
