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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Max Surge Current | Configuration | Diode Element Material | Breakdown Voltage-Min | Peak Reverse Current | Reverse Voltage | Reverse Current-Max | Reverse Test Voltage | Diode Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CBR1F-010 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | 1 (Unlimited) | Standard | Non-RoHS Compliant | 2012 | /files/centralsemiconductorcorp-cbr1f010-datasheets-2295.pdf | 4-Circular, A Case | 4 | no | EAR99 | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | WIRE | NOT SPECIFIED | Single | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | O-PBCY-W4 | 50A | SILICON | 10μA | 100V | Single Phase | 1 | 1.5A | 0.2μs | 10μA @ 100V | 1.3V @ 1A | 1.5A | ||||||||||||||
| G3SBA60-5410M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-g3sba60l5700m351-datasheets-2300.pdf | 4-SIP, GBU | Single Phase | 600V | 5μA @ 600V | 1V @ 2A | 2.3A | |||||||||||||||||||||||||||||||||||||
| G3SBA60L-5708E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-g3sba60l5703e351-datasheets-2286.pdf | 4-SIP, GBU | GBU | Single Phase | 600V | 5μA @ 600V | 1V @ 2A | 2.3A | ||||||||||||||||||||||||||||||||||||
| G3SBA80L-6000M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-g3sba60l5700m351-datasheets-2300.pdf | 4-SIP, GBU | Single Phase | 800V | 5μA @ 800V | 1V @ 2A | 2.3A | |||||||||||||||||||||||||||||||||||||
| G3SBA60L-5700M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-g3sba60l5700m351-datasheets-2300.pdf | 4-SIP, GBU | Single Phase | 600V | 5μA @ 600V | 1V @ 2A | 2.3A | |||||||||||||||||||||||||||||||||||||
| G3SBA80L-6000E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-g3sba60l5703e351-datasheets-2286.pdf | 4-SIP, GBU | Single Phase | 800V | 5μA @ 800V | 1V @ 2A | 2.3A | |||||||||||||||||||||||||||||||||||||
| KBP153G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/taiwansemiconductorcorporation-kbp151gc2g-datasheets-2182.pdf | 4-SIP, KBP | 4 | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NO | WIRE | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 50A | 1 | 1.5A | 200V | 10μA @ 200V | 1.1V @ 1.5A | 1.5A | ||||||||||||||||||||||
| CBR2-040 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | 1 (Unlimited) | Standard | Non-RoHS Compliant | /files/centralsemiconductorcorp-cbr2040-datasheets-2241.pdf | 4-Circular, A Case | A Case | Single Phase | 400V | 10μA @ 400V | 1.1V @ 2A | 2A | |||||||||||||||||||||||||||||||||||||
| G2SB60L-5751M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-g2sb60l5751m345-datasheets-2268.pdf | 4-SIP, GBL | Single Phase | 600V | 5μA @ 600V | 1V @ 750mA | 1.5A | ||||||||||||||||||||||||||||||||||||||
| KBP205G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbp204gc2-datasheets-2191.pdf | 4-SIP, KBP | KBP | Single Phase | 600V | 10μA @ 600V | 1.2V @ 2A | 2A | |||||||||||||||||||||||||||||||||||||
| CBR1A-040 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | 1 (Unlimited) | Standard | Non-RoHS Compliant | /files/centralsemiconductorcorp-cbr1a020-datasheets-2231.pdf | 4-Circular, A Case | 4 | no | EAR99 | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | WIRE | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | O-PBCY-W4 | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 50A | 1 | 1.5A | 400V | 10μA @ 400V | 1V @ 1A | 1.5A | |||||||||||||||
| CBR2-010 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | 1 (Unlimited) | Standard | Non-RoHS Compliant | /files/centralsemiconductorcorp-cbr2040-datasheets-2241.pdf | 4-Circular, A Case | 4 | no | EAR99 | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | O-PBCY-W4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | Single Phase | 60A | 1 | 2A | 100V | 10μA @ 100V | 1.1V @ 2A | 2A | ||||||||||||||||
| CBR1U-D010S | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Tube | 1 (Unlimited) | Standard | Non-RoHS Compliant | 2012 | /files/centralsemiconductorcorp-cbr1ud010str13-datasheets-1031.pdf | 4-SMD, Gull Wing | 4 | no | EAR99 | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn80Pb20) | YES | DUAL | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Not Qualified | R-PDSO-G4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | 5μA | 100V | Single Phase | 50A | 1 | 1A | 0.05μs | 100V | 5μA @ 100V | 1.05V @ 1A | 1A | ||||||||||||
| KBP202G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbp204gc2-datasheets-2191.pdf | 4-SIP, KBP | KBP | Single Phase | 100V | 10μA @ 100V | 1.2V @ 2A | 2A | |||||||||||||||||||||||||||||||||||||
| G2SB60L-5700E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-g2sb60l5700e351-datasheets-2276.pdf | 4-SIP, GBL | Single Phase | 600V | 5μA @ 600V | 1V @ 750mA | 1.5A | |||||||||||||||||||||||||||||||||||||
| KBP307G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbp301gc2g-datasheets-2225.pdf | 4-SIP, KBP | EAR99 | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 3A | 3A | |||||||||||||||||||||||||||||||||||||
| KBP302G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbp301gc2g-datasheets-2225.pdf | 4-SIP, KBP | EAR99 | Single Phase | 100V | 10μA @ 100V | 1.1V @ 3A | 3A | |||||||||||||||||||||||||||||||||||||
| KBP155G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbp151gc2g-datasheets-2182.pdf | 4-SIP, KBP | 4 | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NO | WIRE | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 50A | 1 | 1.5A | 600V | 10μA @ 600V | 1.1V @ 1.5A | 1.5A | |||||||||||||||||||||||
| CBR2-080 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | 1 (Unlimited) | Standard | Non-RoHS Compliant | /files/centralsemiconductorcorp-cbr2040-datasheets-2241.pdf | 4-Circular, A Case | 4 | no | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | O-PBCY-W4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 60A | 1 | 2A | 800V | 10μA @ 800V | 1.1V @ 2A | 2A | |||||||||||||||||
| CBR2-100 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | 1 (Unlimited) | Standard | Non-RoHS Compliant | 2012 | /files/centralsemiconductorcorp-cbr2040-datasheets-2241.pdf | 4-Circular, A Case | 4 | no | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | O-PBCY-W4 | BRIDGE, 4 ELEMENTS | SILICON | 1000V | Single Phase | 60A | 1 | 2A | 1kV | 10μA @ 1000V | 1.1V @ 2A | 2A | ||||||||||||||||
| CBR2-020 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | 1 (Unlimited) | Standard | Non-RoHS Compliant | /files/centralsemiconductorcorp-cbr2040-datasheets-2241.pdf | 4-Circular, A Case | 4 | no | EAR99 | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | O-PBCY-W4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 60A | 1 | 2A | 200V | 10μA @ 200V | 1.1V @ 2A | 2A | ||||||||||||||||
| KBP207G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/taiwansemiconductorcorporation-kbp204gc2-datasheets-2191.pdf | 4-SIP, KBP | 4 | 7 Weeks | EAR99 | UL RECOGNIZED | NO | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 1000V | Single Phase | 60A | 1 | 2A | 1kV | 10μA @ 1000V | 1.2V @ 2A | 2A | ||||||||||||||||||||||||
| KBP304G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/taiwansemiconductorcorporation-kbp301gc2g-datasheets-2225.pdf | 4-SIP, KBP | EAR99 | Single Phase | 400V | 10μA @ 400V | 1.1V @ 3A | 3A | ||||||||||||||||||||||||||||||||||||
| G2SBA60L-6847E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
| KBP306G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/taiwansemiconductorcorporation-kbp301gc2g-datasheets-2225.pdf | 4-SIP, KBP | KBP | Single Phase | 800V | 10μA @ 800V | 1.1V @ 3A | 3A | ||||||||||||||||||||||||||||||||||||
| TS8P07G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts8p01gd2g-datasheets-0972.pdf | 4-SIP, TS-6P | 12 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||
| KBP105G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbp102gc2-datasheets-2131.pdf | 4-SIP, KBP | KBP | Single Phase | 600V | 10μA @ 600V | 1V @ 1A | 1A | |||||||||||||||||||||||||||||||||||||
| KBP303G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbp301gc2g-datasheets-2225.pdf | 4-SIP, KBP | KBP | Single Phase | 200V | 10μA @ 200V | 1.1V @ 3A | 3A | |||||||||||||||||||||||||||||||||||||
| CBR1A-080 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | 1 (Unlimited) | Standard | Non-RoHS Compliant | /files/centralsemiconductorcorp-cbr1a020-datasheets-2231.pdf | 4-Circular, A Case | 4 | no | EAR99 | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | WIRE | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | O-PBCY-W4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 50A | 1 | 1.5A | 800V | 10μA @ 800V | 1V @ 1A | 1.5A | |||||||||||||||
| KBP157G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/taiwansemiconductorcorporation-kbp151gc2g-datasheets-2182.pdf | 4-SIP, KBP | 4 | 16 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NO | WIRE | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 1000V | Single Phase | 50A | 1 | 1.5A | 1kV | 10μA @ 1000V | 1.1V @ 1.5A | 1.5A |
