Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Configuration | Case Connection | Diode Element Material | Breakdown Voltage-Min | Diode Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
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KBP106G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/taiwansemiconductorcorporation-kbp102gc2-datasheets-2131.pdf | 4-SIP, KBP | 4 | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NO | WIRE | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 30A | 1 | 1A | 800V | 10μA @ 800V | 1V @ 1A | 1A | ||||||||||||||||||
MMB8G-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | /files/comchiptechnology-mmb1gg-datasheets-2057.pdf | 4-SMD, Gull Wing | MMB | Single Phase | 800V | 5μA @ 800V | 1.1V @ 800mA | 800mA | |||||||||||||||||||||||||||||||||
KBP105G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/taiwansemiconductorcorporation-kbp102gc2-datasheets-2131.pdf | 4-SIP, KBP | KBP | Single Phase | 600V | 10μA @ 600V | 1V @ 1A | 1A | ||||||||||||||||||||||||||||||||
KBP204G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/taiwansemiconductorcorporation-kbp204gc2-datasheets-2191.pdf | 4-SIP, KBP | 16 Weeks | KBP | Single Phase | 400V | 10μA @ 400V | 1.2V @ 2A | 2A | |||||||||||||||||||||||||||||||
KBPF205G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbpf206gb0g-datasheets-2096.pdf | 4-SIP, KBPF | 4 | EAR99 | e3 | Matte Tin (Sn) | NO | 260 | 30 | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 60A | 1 | 2A | 600V | 5μA @ 600V | 1.1V @ 2A | 2A | |||||||||||||||||||
KBP155G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/taiwansemiconductorcorporation-kbp151gc2g-datasheets-2182.pdf | 4-SIP, KBP | 4 | 7 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NO | WIRE | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 50A | 1 | 1.5A | 600V | 10μA @ 600V | 1.1V @ 1.5A | 1.5A | |||||||||||||||||
KBP152G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbp151gc2g-datasheets-2182.pdf | 4-SIP, KBP | 4 | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NO | WIRE | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | Single Phase | 50A | 1 | 1.5A | 100V | 10μA @ 100V | 1.1V @ 1.5A | 1.5A | |||||||||||||||||||
KBP156G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbp151gc2g-datasheets-2182.pdf | 4-SIP, KBP | 4 | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NO | WIRE | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 50A | 1 | 1.5A | 800V | 10μA @ 800V | 1.1V @ 1.5A | 1.5A | |||||||||||||||||||
TS6P03G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts6p05gd2g-datasheets-7890.pdf | 4-SIP, TS-6P | 23 Weeks | TS-6P | Single Phase | 200V | 10μA @ 200V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||
KBP102G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbp102gc2-datasheets-2131.pdf | 4-SIP, KBP | 4 | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NO | WIRE | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | Single Phase | 30A | 1 | 1A | 100V | 10μA @ 100V | 1V @ 1A | 1A | |||||||||||||||||||
KBP154G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/taiwansemiconductorcorporation-kbp151gc2g-datasheets-2182.pdf | 4-SIP, KBP | 4 | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NO | WIRE | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 50A | 1 | 1.5A | 400V | 10μA @ 400V | 1.1V @ 1.5A | 1.5A | ||||||||||||||||||
KBP101G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/taiwansemiconductorcorporation-kbp102gc2-datasheets-2131.pdf | 4-SIP, KBP | KBP | Single Phase | 50V | 10μA @ 50V | 1V @ 1A | 1A | ||||||||||||||||||||||||||||||||
KBP151G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/taiwansemiconductorcorporation-kbp151gc2g-datasheets-2182.pdf | 4-SIP, KBP | KBP | Single Phase | 50V | 10μA @ 50V | 1.1V @ 1.5A | 1.5A | ||||||||||||||||||||||||||||||||
KBPF407G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbpf406gb0g-datasheets-2143.pdf | 4-SIP, KBPF | 4 | EAR99 | e3 | Matte Tin (Sn) | NO | 260 | 30 | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 1000V | Single Phase | 120A | 1 | 4A | 1kV | 5μA @ 1000V | 1.1V @ 4A | 4A | |||||||||||||||||||
KBP152G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/taiwansemiconductorcorporation-kbp151gc2g-datasheets-2182.pdf | 4-SIP, KBP | 16 Weeks | KBP | Single Phase | 100V | 10μA @ 100V | 1.1V @ 1.5A | 1.5A | |||||||||||||||||||||||||||||||
TS25P05G-K D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts25p06gkc2g-datasheets-2132.pdf | 4-SIP, TS-6P | 4 | EAR99 | NO | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 350A | 1 | 25A | 600V | 10μA @ 600V | 1.1V @ 25A | 25A | |||||||||||||||||||||||
KBPF404G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbpf406gb0g-datasheets-2143.pdf | 4-SIP, KBPF | 4 | EAR99 | e3 | Matte Tin (Sn) | NO | 260 | 30 | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 120A | 1 | 4A | 400V | 5μA @ 400V | 1.1V @ 4A | 4A | |||||||||||||||||||
KBPF304G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbpf306gb0g-datasheets-2120.pdf | 4-SIP, KBPF | 4 | EAR99 | e3 | Matte Tin (Sn) | NO | 260 | 30 | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 80A | 1 | 3A | 400V | 5μA @ 400V | 1.1V @ 3A | 3A | |||||||||||||||||||
TS10P03GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts10p05gd2g-datasheets-7207.pdf | 4-SIP, TS-6P | TS-6P | Single Phase | 200V | 10μA @ 200V | 1.1V @ 10A | 10A | |||||||||||||||||||||||||||||||
KBPF307G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbpf306gb0g-datasheets-2120.pdf | 4-SIP, KBPF | 4 | EAR99 | e3 | Matte Tin (Sn) | NO | 260 | 30 | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 1000V | Single Phase | 80A | 1 | 3A | 1kV | 5μA @ 1000V | 1.1V @ 3A | 3A | |||||||||||||||||||
CBR1F-D100 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | 1 (Unlimited) | Standard | Non-RoHS Compliant | /files/centralsemiconductorcorp-cbr1fd080-datasheets-2077.pdf | 4-EDIP (0.300, 7.62mm) | 4 | no | EAR99 | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PDIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | Single Phase | 50A | 1 | 1A | 0.5μs | 1kV | 10μA @ 1kV | 1.3V @ 1A | 1A | ||||||||||||
TS25P07G-K D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts25p06gkc2g-datasheets-2132.pdf | 4-SIP, TS-6P | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 25A | 25A | |||||||||||||||||||||||||||||||||
KBP102G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/taiwansemiconductorcorporation-kbp102gc2-datasheets-2131.pdf | 4-SIP, KBP | 4 | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NO | WIRE | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | Single Phase | 30A | 1 | 1A | 100V | 10μA @ 100V | 1V @ 1A | 1A | ||||||||||||||||||
KBPF204G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbpf206gb0g-datasheets-2096.pdf | 4-SIP, KBPF | 4 | EAR99 | e3 | Matte Tin (Sn) | NO | 260 | 30 | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 60A | 1 | 2A | 400V | 5μA @ 400V | 1.1V @ 2A | 2A | |||||||||||||||||||
TS25P06G-K C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts25p06gkc2g-datasheets-2132.pdf | 4-SIP, TS-6P | 4 | EAR99 | e3 | Matte Tin (Sn) | NO | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 350A | 1 | 25A | 800V | 10μA @ 800V | 1.1V @ 25A | 25A | |||||||||||||||||||||
TS8P02GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts8p01gd2g-datasheets-0972.pdf | 4-SIP, TS-6P | 12 Weeks | TS-6P | Single Phase | 100V | 10μA @ 100V | 1.1V @ 8A | 8A | |||||||||||||||||||||||||||||
TS15P06G-K D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts15p07gkd2g-datasheets-2114.pdf | 4-SIP, TS-6P | EAR99 | Single Phase | 800V | 10μA @ 800V | 1.1V @ 15A | 15A | |||||||||||||||||||||||||||||||||
MMB6G-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | /files/comchiptechnology-mmb2ghf-datasheets-2083.pdf | 4-SMD, Gull Wing | MMB | Single Phase | 600V | 5μA @ 600V | 1.1V @ 800mA | 800mA | |||||||||||||||||||||||||||||||||
CBR35-100PW | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | Box | 1 (Unlimited) | Standard | Non-RoHS Compliant | 2001 | /files/centralsemiconductorcorp-cbr35100pw-datasheets-2136.pdf | 4-Square, FPW | 4 | no | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | UPPER | WIRE | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | S-PUFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | Single Phase | 400A | 1 | 35A | 1kV | 10μA @ 1000V | 1.2V @ 17.5A | 35A | |||||||||
KBP104G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbp102gc2-datasheets-2131.pdf | 4-SIP, KBP | 4 | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NO | WIRE | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 30A | 1 | 1A | 400V | 10μA @ 400V | 1V @ 1A | 1A |
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