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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| FDC6401N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdc6401n-datasheets-4103.pdf | 20V | 3A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1.1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 70MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 960mW | GULL WING | 2 | Dual | 960mW | 2 | FET General Purpose Power | 150°C | 5 ns | 7ns | 1.6 ns | 13 ns | 3A | 12V | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 900mV | 700mW | 3A | 20V | 2 N-Channel (Dual) | 324pF @ 10V | 900 mV | 70m Ω @ 3A, 4.5V | 1.5V @ 250μA | 4.6nC @ 4.5V | Standard | |||||||||||||||||||||||||
| DMN6040SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn6040ssd13-datasheets-4224.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 8 | 18 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 1.7W | GULL WING | 260 | 2 | Dual | 40 | 1.3W | 2 | 6.6 ns | 8.1ns | 4 ns | 20.1 ns | 5A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 5A | 0.04Ohm | 60V | 2 N-Channel (Dual) | 1287pF @ 25V | 40m Ω @ 4.5A, 10V | 3V @ 250μA | 22.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| AO6604 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/alphaomegasemiconductor-ao6604-datasheets-9382.pdf | SC-74, SOT-457 | Lead Free | 18 Weeks | 6 | No | 1.1W | 1.1W | 2 | Other Transistors | 2.5A | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 3.4A | N and P-Channel Complementary | 320pF @ 10V | 65m Ω @ 3.4A, 4.5V | 1V @ 250μA | 3.4A 2.5A | 3.8nC @ 4.5V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC6561AN | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdc6561an-datasheets-4262.pdf | 30V | 2.5A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 10 Weeks | No SVHC | 95mOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | 24A | e3 | 30V | 960mW | GULL WING | Dual | 960mW | 2 | FET General Purpose Power | 6 ns | 10ns | 10 ns | 12 ns | 2.5A | 20V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 700mW | 30V | 2 N-Channel (Dual) | 220pF @ 15V | 1.8 V | 95m Ω @ 2.5A, 10V | 3V @ 250μA | 3.2nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||
| SIA527DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia527djt1ge3-datasheets-4179.pdf | PowerPAK® SC-70-6 Dual | 14 Weeks | 710μOhm | EAR99 | unknown | 7.8W | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 10 ns | 10ns | 10 ns | 22 ns | 4.5A | 8V | 12V | 12V | N and P-Channel | 500pF @ 6V | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 15nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTUD3170NZT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntud3170nzt5g-datasheets-4091.pdf | SOT-963 | 1.05mm | 400μm | 850μm | Lead Free | 6 | 8 Weeks | No SVHC | 1.5Ohm | 6 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Tin | No | e3 | YES | 125mW | FLAT | NTUD3170NZ | 6 | Dual | 200mW | 2 | FET General Purpose Power | 16.5 ns | 25.5ns | 80 ns | 142 ns | 280mA | 8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 20V | 2 N-Channel (Dual) | 12.5pF @ 15V | 1.5 Ω @ 100mA, 4.5V | 1V @ 250μA | 220mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| AO4842 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 16 Weeks | 8 | No | 2W | 2W | 2 | 7.7A | 30V | 2 N-Channel (Dual) | 448pF @ 15V | 22m Ω @ 7.5A, 10V | 2.6V @ 250μA | 11nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1900DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si1900dlt1e3-datasheets-4332.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 7.512624mg | Unknown | 480mOhm | 6 | yes | EAR99 | e3 | Matte Tin (Sn) | 270mW | GULL WING | 260 | SI1900 | 6 | 2 | Dual | 40 | 270mW | 2 | FET General Purpose Power | Not Qualified | 5 ns | 8ns | 8 ns | 8 ns | 630mA | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.59A | 30V | 2 N-Channel (Dual) | 3 V | 480m Ω @ 590mA, 10V | 3V @ 250μA | 590mA | 1.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||
| DMG4800LSD-13 | Diodes Incorporated | $0.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmg4800lsd13-datasheets-4156.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.7mm | 3.95mm | Lead Free | 8 | 16 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | 1.17W | GULL WING | 260 | DMG4800LSD | 8 | Dual | 40 | 1.17W | 2 | FET General Purpose Power | 150°C | 5.03 ns | 4.5ns | 8.55 ns | 26.33 ns | 7.5A | 25V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.6V | 0.016Ohm | 30V | 2 N-Channel (Dual) | 798pF @ 10V | 16m Ω @ 9A, 10V | 1.6V @ 250μA | 8.56nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||
| SIA519EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia519edjt1ge3-datasheets-4324.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 40MOhm | 6 | EAR99 | Tin | No | e3 | 7.8W | 260 | SIA519 | 6 | 40 | 1.9W | 2 | Other Transistors | 4.5A | 12V | SILICON | DRAIN | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 20V | N and P-Channel | 350pF @ 10V | 40m Ω @ 4.2A, 4.5V | 1.4V @ 250μA | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SIA533EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia533edjt1ge3-datasheets-4354.pdf | PowerPAK® SC-70-6 Dual | 800μm | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 34MOhm | 6 | EAR99 | 7.8W | C BEND | NOT SPECIFIED | SIA533 | 6 | 2 | Single | NOT SPECIFIED | 7.8W | 2 | Other Transistors | Not Qualified | 150°C | 4.5A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V | METAL-OXIDE SEMICONDUCTOR | 400mV | 12V | N and P-Channel | 420pF @ 6V | 400 mV | 34m Ω @ 4.6A, 4.5V | 1V @ 250μA | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| FDC6327C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fdc6327c-datasheets-4120.pdf | 2.7A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1.1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 80MOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | TIN (SN) | 960mW | GULL WING | 2 | Dual | 960mW | 2 | Other Transistors | 150°C | 14ns | 14 ns | 1.9A | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 900mV | 700mW | 20V | N and P-Channel | 325pF @ 10V | 900 mV | 80m Ω @ 2.7A, 4.5V | 1.5V @ 250μA | 2.7A 1.9A | 4.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||
| FDG8850NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fdg8850nz-datasheets-4127.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1.1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | No SVHC | 400mOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 360mW | GULL WING | 2 | Dual | 360mW | 2 | FET General Purpose Power | 150°C | 4 ns | 1ns | 1 ns | 9 ns | 750mA | 12V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 300mW | 0.75A | 30V | 2 N-Channel (Dual) | 120pF @ 10V | 400m Ω @ 750mA, 4.5V | 1.5V @ 250μA | 1.44nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||
| DMN3018SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn3018ssd13-datasheets-4152.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | 8 | 15 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 1.5W | GULL WING | 260 | 2 | Single | 40 | 2 | FET General Purpose Power | 4.3 ns | 4.4ns | 4.1 ns | 20.1 ns | 6.7A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 60A | 30V | 2 N-Channel (Dual) | 697pF @ 15V | 22m Ω @ 10A, 10V | 2.1V @ 250μA | 13.2nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| DMP2075UFDB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmp2075ufdb7-datasheets-3909.pdf | 6-UDFN Exposed Pad | 23 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 20V | 700mW Ta | 2 P-Channel (Dual) | 642pF @ 10V | 75m Ω @ 2.9A, 4.5V | 1.4V @ 250μA | 3.8A Ta | 8.8nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2400UV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmn2400uv7-datasheets-3553.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.25mm | Lead Free | 6 | 14 Weeks | 3.005049mg | No SVHC | 500mOhm | 6 | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | Tin | No | e3 | 530mW | FLAT | 6 | Dual | 530mW | 2 | FET General Purpose Power | 4.06 ns | 7.28ns | 10.54 ns | 13.74 ns | 1.33A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 900mV | 2 N-Channel (Dual) | 36pF @ 16V | 480m Ω @ 200mA, 5V | 900mV @ 250μA | 0.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| EM6K7T2R | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-em6k7t2r-datasheets-3742.pdf | SOT-563, SOT-666 | Lead Free | 6 | 16 Weeks | 6 | yes | EAR99 | No | 150mW | FLAT | 260 | *K7 | 6 | 10 | 2 | FET General Purpose Power | 5 ns | 10ns | 10 ns | 15 ns | 200mA | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.2A | 1.4Ohm | 2 N-Channel (Dual) | 25pF @ 10V | 1.2 Ω @ 200mA, 2.5V | 1V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| EM6K1T2R | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | 30V | 100mA | SOT-563, SOT-666 | 1.6mm | 500μm | 1.2mm | Lead Free | 6 | No SVHC | 13Ohm | 6 | yes | EAR99 | No | e2 | TIN COPPER | 150mW | FLAT | 260 | *K1 | 6 | Dual | 10 | 150mW | 2 | FET General Purpose Power | 15 ns | 35ns | 35 ns | 80 ns | 100mA | 20V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.1A | 30V | 2 N-Channel (Dual) | 13pF @ 5V | 1.5 V | 8 Ω @ 10mA, 4V | 1.5V @ 100μA | Logic Level Gate | |||||||||||||||||||||||||||||||
| DMN5L06DWK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn5l06dwk7-datasheets-3889.pdf | 50V | 305mA | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1.1mm | 1.35mm | Lead Free | 6 | 16 Weeks | 6.010099mg | No SVHC | 2Ohm | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 250mW | GULL WING | 260 | DMN5L06DWK | 6 | Dual | 40 | 250mW | 2 | FET General Purpose Power | 150°C | 2.1 ns | 14.4 ns | 305mA | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 0.305A | 5 pF | 50V | 2 N-Channel (Dual) | 50pF @ 25V | 2 Ω @ 50mA, 5V | 1V @ 250μA | Logic Level Gate | |||||||||||||||||||||||||||||
| FDG6306P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdg6306p-datasheets-3977.pdf | -20V | -600mA | 6-TSSOP, SC-88, SOT-363 | 2mm | 1.1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | No SVHC | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 300mW | GULL WING | Dual | 300mW | 2 | Other Transistors | 150°C | 5.5 ns | 14ns | 14 ns | 6 ns | 600mA | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1.2V | -20V | 2 P-Channel (Dual) | 114pF @ 10V | 420m Ω @ 600mA, 4.5V | 1.5V @ 250μA | 2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||
| IRF9389TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf9389trpbf-datasheets-4013.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 12 Weeks | No SVHC | 8 | EAR99 | No | 2W | GULL WING | IRF9389 | Dual | 2W | 2 | Other Transistors | 14ns | 15 ns | 17 ns | 4.6A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.8V | 34A | 30V | N and P-Channel | 398pF @ 15V | 27m Ω @ 6.8A, 10V | 2.3V @ 10μA | 6.8A 4.6A | 14nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| FDC6420C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | 3A | SOT-23-6 Thin, TSOT-23-6 | 900μm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 70MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | TIN (SN) | 700mW | GULL WING | 260 | 2 | Dual | 30 | 960mW | 2 | Other Transistors | 150°C | 12ns | 12 ns | 10 ns | 3A | 12V | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 900mV | 3A | 20V | N and P-Channel | 324pF @ 10V | 900 mV | 70m Ω @ 3A, 4.5V | 1.5V @ 250μA | 3A 2.2A | 4.6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||
| NX1029X,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/nexperiausainc-nx1029x115-datasheets-4067.pdf | SOT-563, SOT-666 | Lead Free | 4 Weeks | 6 | No | e3 | Tin (Sn) | 500mW | 6 | 500mW | 2 | 11ns | 25 ns | 48 ns | 170mA | 20V | 60V 50V | -50V | N and P-Channel | 36pF @ 25V | 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 330mA 170mA | 0.35nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1902DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1902dlt1e3-datasheets-4051.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1.1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 7.512624mg | No SVHC | 385MOhm | 6 | yes | EAR99 | Tin | No | e3 | 270mW | GULL WING | SI1902 | 6 | 2 | Dual | 270mW | 2 | 150°C | 10 ns | 16ns | 16 ns | 10 ns | 660mA | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 20V | 2 N-Channel (Dual) | 600 mV | 385m Ω @ 660mA, 4.5V | 1.5V @ 250μA | 1.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| DMN601DWK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/diodesincorporated-dmn601dwk7-datasheets-3824.pdf | 60V | 305mA | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 16 Weeks | 6.010099mg | No SVHC | 2Ohm | 6 | yes | EAR99 | LOW CAPACITANCE | Tin | No | e3 | AEC-Q101 | 200mW | GULL WING | 260 | DMN601DWK | 6 | 2 | Dual | 40 | 200mW | 2 | FET General Purpose Powers | 305mA | 20V | 60V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.6V | 0.305A | 5 pF | 60V | 2 N-Channel (Dual) | 50pF @ 25V | 1.6 V | 2 Ω @ 500mA, 10V | 2.5V @ 1mA | Logic Level Gate | |||||||||||||||||||||||||||
| FDC6312P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdc6312p-datasheets-3831.pdf | -20V | -2.3A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1.1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 115MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | 960mW | GULL WING | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 960mW | 2 | Other Transistors | Not Qualified | 150°C | 8 ns | 13ns | 13 ns | 18 ns | 2.3A | 8V | -20V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -900mV | 700mW | -20V | 2 P-Channel (Dual) | 467pF @ 10V | -900 mV | 115m Ω @ 2.3A, 4.5V | 1.5V @ 250μA | 7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||
| SI1922EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1922edht1ge3-datasheets-3847.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 14 Weeks | 7.512624mg | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1922 | 6 | Dual | 30 | 740mW | 2 | FET General Purpose Power | 150°C | 22 ns | 80ns | 220 ns | 645 ns | 1.3A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 400mV | 20V | 2 N-Channel (Dual) | 198m Ω @ 1A, 4.5V | 1V @ 250μA | 2.5nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI1016CX-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1016cxt1ge3-datasheets-3861.pdf | SOT-563, SOT-666 | Lead Free | 6 | 14 Weeks | 8.193012mg | No SVHC | 6 | EAR99 | No | e3 | MATTE TIN | 220mW | DUAL | FLAT | 260 | 6 | 30 | 220mW | 2 | Other Transistors | 11 ns | 16ns | 11 ns | 26 ns | 600mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 400mV | 20V | N and P-Channel | 43pF @ 10V | 396m Ω @ 500mA, 4.5V | 1V @ 250μA | 2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| FDC6333C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdc6333c-datasheets-3849.pdf | 2.5A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 95MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 960mW | GULL WING | 2 | Dual | 960mW | 2 | Other Transistors | 150°C | 4.5 ns | 13ns | 13 ns | 11 ns | 2.5A | 25V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 1.8V | 700mW | -30V | N and P-Channel | 282pF @ 15V | 1.8 V | 95m Ω @ 2.5A, 10V | 3V @ 250μA | 2.5A 2A | 6.6nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||
| FDY1002PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdy1002pz-datasheets-3896.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 10 Weeks | 32mg | 500mOhm | 6 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | Tin | No | e3 | 446mW | FLAT | Dual | 625mW | 2 | Other Transistors | 3.5 ns | 2.9ns | 2.9 ns | 23 ns | 830mA | 8V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.83A | 20V | 2 P-Channel (Dual) | 135pF @ 10V | 500m Ω @ 830mA, 4.5V | 1V @ 250μA | 3.1nC @ 4.5V | Logic Level Gate |
