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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SSM6N58NU,LF | Toshiba Semiconductor and Storage | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 12 Weeks | 6 | 1W | 2 | Dual | 26 ns | 9 ns | 4A | 1V | 30V | 30V | 2 N-Channel (Dual) | 129pF @ 15V | 84m Ω @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | Logic Level Gate, 1.8V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDG6332C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdg6332c-datasheets-3789.pdf | 700mA | 6-TSSOP, SC-88, SOT-363 | 2mm | 1.1mm | 1.25mm | Lead Free | 6 | 10 Weeks | No SVHC | 300MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | 7A | e3 | 20V | 300mW | GULL WING | Dual | 300mW | 2 | Other Transistors | 150°C | 14ns | 14 ns | 6 ns | 700mA | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.1V | 20V | N and P-Channel | 113pF @ 10V | 300m Ω @ 700mA, 4.5V | 1.5V @ 250μA | 700mA 600mA | 1.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| NDC7002N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-ndc7002n-datasheets-3811.pdf | 50V | 350mA | SOT-23-6 Thin, TSOT-23-6 | 3mm | 900μm | 1.7mm | Lead Free | 6 | 5 Weeks | 36mg | No SVHC | 2Ohm | 6 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | 700mW | GULL WING | 2 | Dual | 960mW | 2 | FET General Purpose Power | 6 ns | 6ns | 6 ns | 11 ns | 510mA | 20V | 50V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.9V | 0.51A | 50V | 2 N-Channel (Dual) | 20pF @ 25V | 1.9 V | 2 Ω @ 510mA, 10V | 2.5V @ 250μA | 1nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| DMN601DWK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/diodesincorporated-dmn601dwk7-datasheets-3824.pdf | 60V | 305mA | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 16 Weeks | 6.010099mg | No SVHC | 2Ohm | 6 | yes | EAR99 | LOW CAPACITANCE | Tin | No | e3 | AEC-Q101 | 200mW | GULL WING | 260 | DMN601DWK | 6 | 2 | Dual | 40 | 200mW | 2 | FET General Purpose Powers | 305mA | 20V | 60V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.6V | 0.305A | 5 pF | 60V | 2 N-Channel (Dual) | 50pF @ 25V | 1.6 V | 2 Ω @ 500mA, 10V | 2.5V @ 1mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| FDC6312P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdc6312p-datasheets-3831.pdf | -20V | -2.3A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1.1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 115MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | 960mW | GULL WING | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 960mW | 2 | Other Transistors | Not Qualified | 150°C | 8 ns | 13ns | 13 ns | 18 ns | 2.3A | 8V | -20V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -900mV | 700mW | -20V | 2 P-Channel (Dual) | 467pF @ 10V | -900 mV | 115m Ω @ 2.3A, 4.5V | 1.5V @ 250μA | 7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||
| SI1922EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1922edht1ge3-datasheets-3847.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 14 Weeks | 7.512624mg | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1922 | 6 | Dual | 30 | 740mW | 2 | FET General Purpose Power | 150°C | 22 ns | 80ns | 220 ns | 645 ns | 1.3A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 400mV | 20V | 2 N-Channel (Dual) | 198m Ω @ 1A, 4.5V | 1V @ 250μA | 2.5nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI1016CX-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1016cxt1ge3-datasheets-3861.pdf | SOT-563, SOT-666 | Lead Free | 6 | 14 Weeks | 8.193012mg | No SVHC | 6 | EAR99 | No | e3 | MATTE TIN | 220mW | DUAL | FLAT | 260 | 6 | 30 | 220mW | 2 | Other Transistors | 11 ns | 16ns | 11 ns | 26 ns | 600mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 400mV | 20V | N and P-Channel | 43pF @ 10V | 396m Ω @ 500mA, 4.5V | 1V @ 250μA | 2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| FDC6333C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdc6333c-datasheets-3849.pdf | 2.5A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 95MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 960mW | GULL WING | 2 | Dual | 960mW | 2 | Other Transistors | 150°C | 4.5 ns | 13ns | 13 ns | 11 ns | 2.5A | 25V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 1.8V | 700mW | -30V | N and P-Channel | 282pF @ 15V | 1.8 V | 95m Ω @ 2.5A, 10V | 3V @ 250μA | 2.5A 2A | 6.6nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| NTZD3155CT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntzd3155ct2g-datasheets-2996.pdf | 540mA | SOT-563, SOT-666 | 1.7mm | 600μm | 1.3mm | Lead Free | 6 | 12 Weeks | No SVHC | 500mOhm | 6 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | YES | 250mW | FLAT | 260 | NTZD3155C | 6 | Dual | 40 | 250mW | 2 | Other Transistors | 10 ns | 12ns | 12 ns | 35 ns | 540mA | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 0.54A | -20V | N and P-Channel | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 540mA 430mA | 2.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| DMG6602SVTQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmg6602svtq7-datasheets-3550.pdf | SOT-23-6 Thin, TSOT-23-6 | 1mm | 6 | 15 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 840mW | DUAL | GULL WING | NOT SPECIFIED | 2 | NOT SPECIFIED | 840mW | 2 | 150°C | R-PDSO-G6 | 2.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.06Ohm | 80 pF | N and P-Channel | 400pF @ 15V | 60m Ω @ 3.1A, 10V | 2.3V @ 250μA | 3.4A 2.8A | 13nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| DMN2004VK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn2004vk7-datasheets-3514.pdf | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | Lead Free | 6 | 16 Weeks | 3.005049mg | No SVHC | 550mOhm | 6 | yes | EAR99 | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | DMN2004VK | 6 | Dual | 40 | 250mW | 2 | FET General Purpose Power | 8 ns | 13.3ns | 36.1 ns | 53.5 ns | 540mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.54A | 20V | 2 N-Channel (Dual) | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| 2N7002DW | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | /files/onsemiconductor-2n7002dw-datasheets-3438.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1.1mm | 1.25mm | Lead Free | 8 Weeks | 28mg | No SVHC | 7.5Ohm | 6 | ACTIVE (Last Updated: 2 days ago) | Tin | No | 200mW | 2 | Dual | 200mW | 2 | 150°C | SC-88 (SC-70-6) | 50pF | 5.85 ns | 12.5 ns | 115mA | 20V | 60V | 1.76V | 200mW | 2Ohm | 78V | 2 N-Channel (Dual) | 50pF @ 25V | 1.76 V | 7.5Ohm @ 50mA, 5V | 2V @ 250μA | 115mA | Logic Level Gate | 7.5 Ω | ||||||||||||||||||||||||||||||||||||||||||||
| DMG1016UDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmg1016udw7-datasheets-3064.pdf | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1.1mm | 1.35mm | Lead Free | 6 | 16 Weeks | 6.010099mg | No SVHC | 750mOhm | 6 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | 330mW | DUAL | GULL WING | DMG1016UDW | 6 | 330mW | 2 | 150°C | 5.1 ns | 7.4ns | 12.3 ns | 26.7 ns | -845mA | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 20V | N and P-Channel | 60.67pF @ 10V | 450m Ω @ 600mA, 4.5V | 1V @ 250μA | 1.07A 845mA | 0.74nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| IPG20N06S415AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-ipg20n06s415aatma1-datasheets-2943.pdf | 8-PowerVDFN | Contains Lead | 8 | 12 Weeks | 8 | yes | not_compliant | Halogen Free | 50W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 20A | 60V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 60V | METAL-OXIDE SEMICONDUCTOR | 0.0155Ohm | 90 mJ | 2 N-Channel (Dual) | 2260pF @ 25V | 15.5m Ω @ 17A, 10V | 4V @ 20μA | 29nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| USB10H | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-usb10h-datasheets-3512.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | yes | unknown | NOT SPECIFIED | YES | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 700mW | 1.9A | 0.17Ohm | 2 P-Channel (Dual) | 441pF @ 10V | 170m Ω @ 1.9A, 4.5V | 1.5V @ 250μA | 1.9A | 4.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1539CDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si1539cdlt1ge3-datasheets-3527.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 14 Weeks | 28.009329mg | No SVHC | 6 | EAR99 | Tin | No | e3 | 340mW | DUAL | GULL WING | 6 | 290mW | 2 | 150°C | 32 ns | 19ns | 10 ns | 4 ns | 700mA | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 0.7A | 0.388Ohm | N and P-Channel | 28pF @ 15V | 388m Ω @ 600mA, 10V | 2.5V @ 250μA | 700mA 500mA | 1.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| DMG1029SV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmg1029sv7-datasheets-3428.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.25mm | Lead Free | 6 | 16 Weeks | 3.005049mg | No SVHC | 4Ohm | 6 | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 450mW | DUAL | FLAT | 260 | DMG1029 | 6 | 40 | 450mW | 2 | Other Transistors | 150°C | 5.5 ns | 7.9ns | 11.6 ns | 10.6 ns | 500mA | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2.5V | 0.37A | 5 pF | 60V | N and P-Channel | 30pF @ 25V | 1.7 Ω @ 500mA, 10V | 2.5V @ 250μA | 500mA 360mA | 0.3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| 2N7002DWH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-2n7002dwh6327xtsa1-datasheets-3140.pdf | 6-VSSOP, SC-88, SOT-363 | Lead Free | 6 | 10 Weeks | No SVHC | 6 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | Halogen Free | 500mW | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 500mW | 2 | Not Qualified | 3 ns | 3.3ns | 3.1 ns | 5.5 ns | 115mA | 20V | 60V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.3A | 3Ohm | 3 pF | 2 N-Channel (Dual) | 20pF @ 25V | 3 Ω @ 500mA, 10V | 2.5V @ 250μA | 300mA | 0.6nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| FDG6322C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdg6322c-datasheets-3570.pdf | 220mA | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | No SVHC | 4Ohm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | 300mW | GULL WING | Dual | 300mW | 2 | Other Transistors | 8ns | 8 ns | 55 ns | 220mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 850mV | 25V | N and P-Channel | 9.5pF @ 10V | 850 mV | 4 Ω @ 220mA, 4.5V | 1.5V @ 250μA | 220mA 410mA | 0.4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| NTUD3169CZT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntud3169czt5g-datasheets-3564.pdf | SOT-963 | 1.05mm | 400μm | 850μm | Lead Free | 6 | 8 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Tin | No | e3 | YES | 710mW | FLAT | NTUD3169CZ | 6 | Dual | 200mW | 2 | Other Transistors | 26 ns | 46ns | 145 ns | 196 ns | 280mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 125mW | 20V | N and P-Channel | 12.5pF @ 15V | 1.5 Ω @ 100mA, 4.5V | 1V @ 250μA | 220mA 200mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| EPC2105 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2105engrt-datasheets-2522.pdf | Die | 14 Weeks | Die | 80V | 2 N-Channel (Half Bridge) | 300pF @ 40V 1100pF @ 40V | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V | 2.5V @ 2.5mA, 2.5V @ 10mA | 9.5A 38A | 2.5nC @ 5V, 10nC @ 5V | GaNFET (Gallium Nitride) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTJD1155LT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntjd1155lt1g-datasheets-3487.pdf | 630mA | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 15 Weeks | No SVHC | 130mOhm | 6 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 400mW | GULL WING | 260 | NTJD1155 | 6 | Dual | 40 | 400mW | 2 | Other Transistors | 1.3A | 1V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 8V | METAL-OXIDE SEMICONDUCTOR | 1V | -8V | N and P-Channel | 175m Ω @ 1.2A, 4.5V | 1V @ 250μA | Standard | |||||||||||||||||||||||||||||||||||||||||||
| DMP3085LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp3085lsd13-datasheets-3301.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.7mm | 3.95mm | Lead Free | 8 | 23 Weeks | No SVHC | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | 1.1W | GULL WING | 260 | 2 | 30 | 1.1W | 2 | Other Transistors | 150°C | 4.8 ns | 5ns | 14.6 ns | 31 ns | -3.9A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.07Ohm | -30V | 2 P-Channel (Dual) | 563pF @ 25V | 70m Ω @ 5.3A, 10V | 3V @ 250μA | 3.9A | 11nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| DMN5L06VK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn5l06vk7-datasheets-3385.pdf | 50V | 280mA | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | Lead Free | 6 | 19 Weeks | 3.005049mg | No SVHC | 2Ohm | 6 | yes | EAR99 | Tin | e3 | 250mW | FLAT | 260 | DMN5L06VK | 6 | Dual | 40 | 250mW | 2 | FET General Purpose Powers | Not Qualified | 280mA | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 5 pF | 50V | 2 N-Channel (Dual) | 50pF @ 25V | 2 Ω @ 50mA, 5V | 1V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| FDW9926NZ | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdw9926nz-datasheets-3447.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | yes | unknown | e3 | TIN | YES | GULL WING | 260 | 8 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | AMPLIFIER | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.1W | 4.5A | 0.032Ohm | 2 N-Channel (Dual) | 600pF @ 10V | 32m Ω @ 4.5A, 4.5V | 1.5V @ 250μA | 4.5A | 8nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FW342-TL-E | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | Non-RoHS Compliant | /files/rochesterelectronicsllc-fw342tle-datasheets-3449.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-SOP | 30V | 1.8W | N and P-Channel | 850pF @ 10V | 33mOhm @ 6A, 10V | 6A 5A | 16nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC2038LVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmc2038lvt7-datasheets-3225.pdf | SOT-23-6 Thin, TSOT-23-6 | 2.95mm | 1mm | 1.65mm | Lead Free | 6 | No SVHC | 74mOhm | 6 | yes | EAR99 | HIGH RELIABILITY | Gold | No | e3 | Matte Tin (Sn) | 800mW | DUAL | GULL WING | 260 | DMC2038 | 6 | 40 | 800mW | 2 | Other Transistors | 150°C | 11 ns | 21 ns | 2.6A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4.5A | 100 pF | 20V | N and P-Channel | 530pF @ 10V | 35m Ω @ 4A, 4.5V | 1V @ 250μA | 3.7A 2.6A | 17nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| AON7804 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/alphaomegasemiconductor-aon7804-datasheets-9095.pdf | 8-PowerSMD, Flat Leads | 18 Weeks | 8 | 3.1W | 17W | 2 | FET General Purpose Power | 9A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 888pF @ 15V | 21m Ω @ 8A, 10V | 2.4V @ 250μA | 18nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2100 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2100engrt-datasheets-2540.pdf | Die | 14 Weeks | Die | 30V | 2 N-Channel (Half Bridge) | 475pF @ 15V 1960pF @ 15V | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 10A Ta 40A Ta | 4.9nC @ 15V, 19nC @ 15V | GaNFET (Gallium Nitride) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2990UDJ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn2990udj7-datasheets-3336.pdf | SOT-963 | Lead Free | 6 | 16 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | 350mW | FLAT | 260 | 6 | Dual | 40 | 350mW | 2 | FET General Purpose Power | 4 ns | 3.3ns | 6.4 ns | 19 ns | 450mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.33A | 0.99Ohm | 2 N-Channel (Dual) | 27.6pF @ 16V | 990m Ω @ 100mA, 4.5V | 1V @ 250μA | 0.5nC @ 4.5V | Logic Level Gate |
