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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | JESD-609 Code | Terminal Finish | Polarity | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI5915DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5915dct1e3-datasheets-2322.pdf | 8-SMD, Flat Lead | 1.1W | SI5915 | 1206-8 ChipFET™ | 3.4A | 8V | 1.1W | 2 P-Channel (Dual) | 70mOhm @ 3.4A, 4.5V | 450mV @ 250μA (Min) | 3.4A | 9nC @ 4.5V | Logic Level Gate | 70 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6933DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6933dqt1e3-datasheets-2333.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 157.991892mg | 45mOhm | 8 | EAR99 | e3 | MATTE TIN | 1W | GULL WING | 260 | 8 | Dual | 40 | 1W | 2 | Not Qualified | 13 ns | 10ns | 10 ns | 33 ns | -2.3A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 3.5A | -30V | 2 P-Channel (Dual) | 45m Ω @ 3.5A, 10V | 1V @ 250μA (Min) | 30nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI6933DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6933dqt1e3-datasheets-2333.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 8 | 1W | 2 | Dual | 1W | 2 | 8-TSSOP | 13 ns | 10ns | 10 ns | 33 ns | 3.5A | 20V | 30V | 1W | 45mOhm | 2 P-Channel (Dual) | 45mOhm @ 3.5A, 10V | 1V @ 250μA (Min) | 30nC @ 10V | Logic Level Gate | 45 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| SI5947DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5947dut1e3-datasheets-4650.pdf | PowerPAK® ChipFET™ Dual | Lead Free | 6 | 58MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 10.4W | C BEND | 260 | SI5947 | 8 | Dual | 40 | 2.3W | 2 | Other Transistors | R-XDSO-C6 | 15ns | 10 ns | 25 ns | -6A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 5A | -20V | 2 P-Channel (Dual) | 480pF @ 10V | 58m Ω @ 3.6A, 4.5V | 1.5V @ 250μA | 6A | 17nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SI5933CDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5933cdct1ge3-datasheets-1970.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 15 Weeks | 84.99187mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2.8W | C BEND | 260 | SI5933 | 8 | 2 | Dual | 30 | 2 | Other Transistors | 1 ns | 34ns | 34 ns | 22 ns | -3.7A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 10A | 0.144Ohm | 2 P-Channel (Dual) | 276pF @ 10V | 144m Ω @ 2.5A, 4.5V | 1V @ 250μA | 3.7A | 6.8nC @ 5V | Standard | ||||||||||||||||||||||||||||||
| SI5943DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5943dut1e3-datasheets-4651.pdf | PowerPAK® ChipFET™ Dual | 3mm | 750μm | 1.9mm | Lead Free | 64mOhm | 8.3W | SI5943 | 2 | Dual | PowerPAK® ChipFet Dual | 460pF | 5 ns | 15ns | 7 ns | 23 ns | -6A | 8V | 12V | 8.3W | 64mOhm | 2 P-Channel (Dual) | 460pF @ 6V | 64mOhm @ 3.6A, 4.5V | 1V @ 250μA | 6A | 15nC @ 8V | Logic Level Gate | 64 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| SI4973DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4973dyt1e3-datasheets-4561.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 23MOhm | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | SI4973 | 8 | Dual | 30 | 1.1W | 2 | Other Transistors | R-PDSO-G8 | 10 ns | 15ns | 90 ns | 115 ns | 5.8A | 25V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 30V | 2 P-Channel (Dual) | 23m Ω @ 7.6A, 10V | 3V @ 250μA | 56nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI4940DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4940dyt1e3-datasheets-2267.pdf | 8-SOIC (0.154, 3.90mm Width) | 506.605978mg | 8 | 1.1W | 2 | Dual | 8-SO | 4.2A | 20V | 40V | 1.1W | 36mOhm | 2 N-Channel (Dual) | 36mOhm @ 5.7A, 10V | 1V @ 250μA (Min) | 4.2A | 14nC @ 10V | Logic Level Gate | 36 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5915DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si5915dct1e3-datasheets-2322.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 84.99187mg | 8 | No | 1.1W | SI5915 | 2 | Dual | 2.1W | 1206-8 ChipFET™ | 20 ns | 70ns | 70 ns | 35 ns | -3.4A | 8V | 8V | 1.1W | 70mOhm | 2 P-Channel (Dual) | 70mOhm @ 3.4A, 4.5V | 450mV @ 250μA (Min) | 3.4A | 9nC @ 4.5V | Logic Level Gate | 70 mΩ | |||||||||||||||||||||||||||||||||||||||||
| SI5935DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5935dct1e3-datasheets-4636.pdf | 8-SMD, Flat Lead | 1.1W | SI5935 | 1206-8 ChipFET™ | 3A | 20V | 1.1W | 2 P-Channel (Dual) | 86mOhm @ 3A, 4.5V | 1V @ 250μA | 3A | 8.5nC @ 4.5V | Logic Level Gate | 86 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5933DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5933dct1e3-datasheets-4639.pdf | 8-SMD, Flat Lead | 1.1W | SI5933 | 1206-8 ChipFET™ | 2.7A | 20V | 1.1W | 2 P-Channel (Dual) | 110mOhm @ 2.7A, 4.5V | 1V @ 250μA | 2.7A | 7.7nC @ 4.5V | Logic Level Gate | 110 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5975DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5975dct1ge3-datasheets-2325.pdf | 8-SMD, Flat Lead | 1.1W | 1206-8 ChipFET™ | 3.1A | 12V | 1.1W | 2 P-Channel (Dual) | 86mOhm @ 3.1A, 4.5V | 450mV @ 1mA (Min) | 3.1A | 9nC @ 4.5V | Logic Level Gate | 86 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4944DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4944dyt1e3-datasheets-4563.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | Unknown | 9.5mOhm | 8 | yes | EAR99 | No | 75A | e3 | Matte Tin (Sn) | 30V | 1.3W | GULL WING | 260 | SI4944 | 8 | Dual | 40 | 1.3W | 2 | FET General Purpose Power | 10 ns | 10ns | 12 ns | 40 ns | 12.2A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 30V | 2 N-Channel (Dual) | 9.5m Ω @ 12.2A, 10V | 3V @ 250μA | 9.3A | 21nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SI5944DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5944dut1e3-datasheets-4655.pdf | PowerPAK® ChipFET™ Dual | 3mm | 750μm | 1.9mm | 6 | 8 | EAR99 | No | 10W | SI5944 | 8 | Dual | 2W | 2 | FET General Purpose Power | R-XDSO-N6 | 4 ns | 30ns | 6 ns | 10 ns | 6A | 20V | 40V | METAL-OXIDE SEMICONDUCTOR | 6A | 2 N-Channel (Dual) | 210pF @ 20V | 112m Ω @ 3.3A, 10V | 3V @ 250μA | 6.6nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI4967DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4967dyt1e3-datasheets-2305.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 186.993455mg | 23mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | 8 | Dual | 40 | 2W | 2 | Other Transistors | 25 ns | 40ns | 95 ns | 210 ns | 7.5A | 8V | SILICON | 12V | METAL-OXIDE SEMICONDUCTOR | 30A | -12V | 2 P-Channel (Dual) | 23m Ω @ 7.5A, 4.5V | 450mV @ 250μA (Min) | 55nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SI5905BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5905bdct1ge3-datasheets-2307.pdf | 8-SMD, Flat Lead | 3.1W | SI5905 | 1206-8 ChipFET™ | 350pF | 4A | 8V | 3.1W | 2 P-Channel (Dual) | 350pF @ 4V | 80mOhm @ 3.3A, 4.5V | 1V @ 250μA | 4A | 11nC @ 8V | Logic Level Gate | 80 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMS3019SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-dms3019ssd13-datasheets-2135.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | NPN | 1.19W | GULL WING | 260 | 8 | 2 | Dual | 40 | 1.19W | 2 | FET General Purpose Power | 7A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 9A | 0.015Ohm | 30V | 2 N-Channel (Dual) | 1932pF @ 15V | 2.4 V | 15m Ω @ 9A, 10V | 2.4V @ 250μA | 7A 5.7A | 42nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI4966DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4966dyt1ge3-datasheets-2310.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | No | 2W | SI4966 | 2 | Dual | 2W | 2 | 8-SO | 40 ns | 40ns | 40 ns | 90 ns | 7.1A | 12V | 20V | 2W | 25mOhm | 2 N-Channel (Dual) | 25mOhm @ 7.1A, 4.5V | 1.5V @ 250μA | 50nC @ 4.5V | Logic Level Gate | 25 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| SI5513DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5513dct1e3-datasheets-4604.pdf | 8-SMD, Flat Lead | 8 | 8 | yes | EAR99 | e3 | PURE MATTE TIN | 1.1W | DUAL | C BEND | 260 | SI5513 | 8 | 30 | 2 | Other Transistors | Not Qualified | 2.1A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 3.1A | 0.075Ohm | N and P-Channel | 75m Ω @ 3.1A, 4.5V | 1.5V @ 250μA | 3.1A 2.1A | 6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI5915BDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5915bdct1e3-datasheets-2313.pdf | 8-SMD, Flat Lead | 8 | 8 | EAR99 | e3 | MATTE TIN | 3.1W | C BEND | 260 | SI5915 | 8 | Dual | 40 | 1.7W | 2 | Not Qualified | 12ns | 12 ns | 20 ns | 4A | 8V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.1W | 4A | 10A | 0.07Ohm | 8V | 2 P-Channel (Dual) | 420pF @ 4V | 70m Ω @ 3.3A, 4.5V | 1V @ 250μA | 14nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI5905BDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5905bdct1ge3-datasheets-2307.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 84.99187mg | 8 | 3.1W | SI5905 | 2 | Dual | 1206-8 ChipFET™ | 350pF | 5 ns | 10ns | 10 ns | 17 ns | 4A | 8V | 8V | 3.1W | 80mOhm | -8V | 2 P-Channel (Dual) | 350pF @ 4V | 80mOhm @ 3.3A, 4.5V | 1V @ 250μA | 4A | 11nC @ 8V | Logic Level Gate | 80 mΩ | |||||||||||||||||||||||||||||||||||||||||
| SI5915BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5915bdct1e3-datasheets-2313.pdf | 8-SMD, Flat Lead | 3.1W | SI5915 | 1206-8 ChipFET™ | 420pF | 4A | 8V | 3.1W | 2 P-Channel (Dual) | 420pF @ 4V | 70mOhm @ 3.3A, 4.5V | 1V @ 250μA | 4A | 14nC @ 8V | Logic Level Gate | 70 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5515DC-T1-GE3 | Vishay Siliconix | $0.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5515dct1e3-datasheets-4608.pdf | 8-SMD, Flat Lead | 15 Weeks | 8 | No | 1.1W | SI5515 | 1206-8 ChipFET™ | 3A | 8V | 20V | 1.1W | N and P-Channel | 40mOhm @ 4.4A, 4.5V | 1V @ 250μA | 4.4A 3A | 7.5nC @ 4.5V | Logic Level Gate | 40 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5504DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5504dct1e3-datasheets-4592.pdf | 8-SMD, Flat Lead | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | DUAL | C BEND | 260 | SI5504 | 8 | 30 | 2 | Other Transistors | 2.1A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.9A | N and P-Channel | 85m Ω @ 2.9A, 10V | 1V @ 250μA (Min) | 2.9A 2.1A | 7.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI4920DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4920dyt1ge3-datasheets-2296.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | SI4920 | 8 | Dual | 30 | 2W | 2 | FET General Purpose Powers | 12 ns | 10ns | 15 ns | 60 ns | 6.9A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 1V | 40A | 30V | 2 N-Channel (Dual) | 25m Ω @ 6.9A, 10V | 1V @ 250μA (Min) | 23nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI5905DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si5905dct1ge3-datasheets-2292.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 90mOhm | 8 | EAR99 | Tin | No | e3 | 1.1W | C BEND | 260 | SI5905 | 8 | Dual | 40 | 1.1W | 2 | 10 ns | 45ns | 45 ns | 30 ns | 3A | 8V | SILICON | 8V | METAL-OXIDE SEMICONDUCTOR | 3A | 2 P-Channel (Dual) | 90m Ω @ 3A, 4.5V | 450mV @ 250μA (Min) | 9nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SI4933DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4933dyt1e3-datasheets-4569.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | SI4933 | 8 | Dual | 30 | 1.1W | 2 | Other Transistors | 35 ns | 47ns | 260 ns | 320 ns | -7.4A | 8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.014Ohm | 12V | 2 P-Channel (Dual) | 14m Ω @ 9.8A, 4.5V | 1V @ 500μA | 7.4A | 70nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI4972DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4972dyt1e3-datasheets-4612.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 506.605978mg | 8 | 2.5W | SI4972 | 2 | Dual | 8-SO | 1.08nF | 108 ns | 130ns | 26 ns | 22 ns | 7.2A | 20V | 30V | 3.1W 2.5W | 26.5mOhm | 30V | 2 N-Channel (Dual) | 1080pF @ 15V | 14.5mOhm @ 6A, 10V | 3V @ 250μA | 10.8A 7.2A | 28nC @ 10V | Standard | 14.5 mΩ | |||||||||||||||||||||||||||||||||||||||||
| SI5509DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5509dct1e3-datasheets-4581.pdf | 8-SMD, Flat Lead | 8 | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | 4.5W | DUAL | 260 | SI5509 | 8 | 30 | 1 | 4.8A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 5A | 10A | 0.052Ohm | N and P-Channel | 455pF @ 10V | 52m Ω @ 5A, 4.5V | 2V @ 250μA | 6.1A 4.8A | 6.6nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SI4914BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4914bdyt1ge3-datasheets-1944.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 15 Weeks | 506.605978mg | 8 | No | 3.1W | SI4914 | 2 | 2 | 8-SO | 10 ns | 9ns | 9 ns | 16 ns | 7.4A | 20V | 30V | 2.7W 3.1W | 23mOhm | 30V | 2 N-Channel (Half Bridge) | 21mOhm @ 8A, 10V | 2.7V @ 250μA | 8.4A 8A | 10.5nC @ 4.5V | Standard | 21 mΩ |
