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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI9926BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si9926bdyt1e3-datasheets-4808.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 506.605978mg | 8 | 1.14W | SI9926 | 2 | Dual | 8-SO | 35 ns | 50ns | 15 ns | 31 ns | 6.2A | 12V | 20V | 1.14W | 20mOhm | 20V | 2 N-Channel (Dual) | 600 mV | 20mOhm @ 8.2A, 4.5V | 1.5V @ 250μA | 6.2A | 20nC @ 4.5V | Logic Level Gate | 20 mΩ | |||||||||||||||||||||||||||||||||||||||
| SI7904DN-T1-E3 | Vishay Siliconix | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | /files/vishaysiliconix-si7904dnt1e3-datasheets-2389.pdf | PowerPAK® 1212-8 Dual | Unknown | 8 | No | 1.3W | SI7904 | Dual | 2.8W | 2 | PowerPAK® 1212-8 Dual | 15 ns | 50ns | 50 ns | 60 ns | 7.7A | 8V | 20V | 1.3W | 30mOhm | 20V | 2 N-Channel (Dual) | 1 V | 30mOhm @ 7.7A, 4.5V | 1V @ 935μA | 5.3A | 15nC @ 4.5V | Logic Level Gate | 30 mΩ | |||||||||||||||||||||||||||||||||||||||
| IRLHS6376TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2009 | /files/infineontechnologies-irlhs6376trpbf-datasheets-4321.pdf | 6-VDFN Exposed Pad | 2.1mm | 950μm | 2.1mm | Lead Free | No SVHC | 63MOhm | 6 | No | 1.5W | IRLHS6376 | Dual | 6.6W | 6-PQFN (2x2) | 270pF | 4.4 ns | 11ns | 9.4 ns | 11 ns | 3.6A | 12V | 30V | 800mV | 1.5W | 12 ns | 63mOhm | 30V | 2 N-Channel (Dual) | 270pF @ 25V | 800 mV | 63mOhm @ 3.4A, 4.5V | 1.1V @ 10μA | 3.6A | 2.8nC @ 4.5V | Logic Level Gate | 63 mΩ | |||||||||||||||||||||||||||||||||
| AO8807 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | RoHS Compliant | 2007 | 8-TSSOP (0.173, 4.40mm Width) | 8 | No | 1.4W | 1.4W | 2 | 6.5A | 8V | 12V | 2 P-Channel (Dual) | 2100pF @ 6V | 20m Ω @ 6.5A, 4.5V | 850mV @ 250μA | 23nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL6372PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irl6372trpbf-datasheets-2513.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | No SVHC | 17.9MOhm | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | IRL6372PBF | Dual | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | 5.9 ns | 13ns | 15 ns | 34 ns | 8.1A | 12V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.1V | 20 ns | 65A | 30V | 2 N-Channel (Dual) | 1020pF @ 25V | 1.1 V | 17.9m Ω @ 8.1A, 4.5V | 1.1V @ 10μA | 11nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||
| SI7904DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7904dnt1e3-datasheets-2389.pdf | PowerPAK® 1212-8 Dual | 30mOhm | No | 1.3W | SI7904 | Dual | PowerPAK® 1212-8 Dual | 15 ns | 50ns | 45 ns | 60 ns | 5.3A | 8V | 20V | 1.3W | 30mOhm | 20V | 2 N-Channel (Dual) | 30mOhm @ 7.7A, 4.5V | 1V @ 935μA | 5.3A | 15nC @ 4.5V | Logic Level Gate | 30 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| SI6967DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6967dqt1e3-datasheets-2348.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 30mOhm | 8 | 1.1W | 2 | Dual | 8-TSSOP | 20 ns | 30ns | 50 ns | 85 ns | 5A | 8V | 8V | 1.1W | 30mOhm | 2 P-Channel (Dual) | 30mOhm @ 5A, 4.5V | 450mV @ 250μA (Min) | 40nC @ 4.5V | Logic Level Gate | 30 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| SI6973DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si6973dqt1ge3-datasheets-2343.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | No | 830mW | Dual | 830mW | 2 | 8-TSSOP | 27 ns | 27ns | 27 ns | 93 ns | -4.1A | 8V | 20V | 830mW | 30mOhm | 20V | 2 P-Channel (Dual) | 30mOhm @ 4.8A, 4.5V | 450mV @ 250μA (Min) | 4.1A | 30nC @ 4.5V | Logic Level Gate | 30 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| SI7901EDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7901ednt1e3-datasheets-2349.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | 48mOhm | e3 | PURE MATTE TIN | 1.3W | 260 | 2 | Dual | 30 | Other Transistors | 2.5 μs | 4μs | 12 μs | 15 μs | 4.3A | 12V | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | 2 P-Channel (Dual) | 48m Ω @ 6.3A, 4.5V | 1V @ 800μA | 18nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI7872DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7872dpt1e3-datasheets-4752.pdf | PowerPAK® SO-8 Dual | 6 | 15 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7872 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 9 ns | 10ns | 9 ns | 10A | 12V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 6.4A | 30A | 2 N-Channel (Half Bridge) | 22m Ω @ 7.5A, 10V | 3V @ 250μA | 6.4A | 11nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||
| SI7218DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7218dnt1e3-datasheets-0762.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | 6 | 15 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 23W | C BEND | 260 | SI7218 | 8 | Dual | 40 | 2.6W | 2 | FET General Purpose Powers | S-XDSO-C6 | 15 ns | 12ns | 10 ns | 10 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 8A | 35A | 5 mJ | 30V | 2 N-Channel (Dual) | 700pF @ 15V | 25m Ω @ 8A, 10V | 3V @ 250μA | 24A | 17nC @ 10V | Standard | |||||||||||||||||||||||||
| SI4834CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4834cdyt1e3-datasheets-2250.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2.9W | GULL WING | 260 | SI4834 | 8 | 2 | Dual | 30 | 2 | 17 ns | 12ns | 10 ns | 7.5A | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 950pF @ 15V | 20m Ω @ 8A, 10V | 3V @ 1mA | 8A | 25nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| SI4567DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4567dyt1e3-datasheets-4470.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2.95W | GULL WING | 260 | SI4567 | 8 | Dual | 30 | 2 | Other Transistors | 4.4A | 16V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2.75W 2.95W | 4.1A | 0.06Ohm | 40V | N and P-Channel | 355pF @ 20V | 60m Ω @ 4.1A, 10V | 2.2V @ 250μA | 5A 4.4A | 12nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||
| IRFHS9351TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2011 | /files/infineontechnologies-irfhs9351trpbf-datasheets-6693.pdf | 6-PowerVDFN | 2.1mm | 950μm | 2.1mm | No SVHC | 6 | No | 1.4W | IRFHS9351PBF | Dual | 1.4W | 6-PQFN Dual (2x2) | 160pF | 8.3 ns | 30ns | 7.9 ns | 6.3 ns | -2.3A | 20V | 30V | -1.8V | 1.4W | 30 ns | 170mOhm | -30V | 2 P-Channel (Dual) | 160pF @ 25V | -1.8 V | 170mOhm @ 3.1A, 10V | 2.4V @ 10μA | 2.3A | 3.7nC @ 10V | Logic Level Gate | 53 mΩ | |||||||||||||||||||||||||||||||||||
| SI6966EDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6966edqt1e3-datasheets-2342.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 8 | 1.25W | SI6966 | 2 | Dual | 1.25W | 2 | 8-TSSOP | 100 ns | 130ns | 220 ns | 420 ns | 5.2A | 12V | 20V | 1.25W | 30mOhm | 20V | 2 N-Channel (Dual) | 30mOhm @ 5.2A, 4.5V | 600mV @ 250μA (Min) | 25nC @ 4.5V | Logic Level Gate | 30 mΩ | ||||||||||||||||||||||||||||||||||||||||
| SI6967DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6967dqt1e3-datasheets-2348.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 8 | 157.991892mg | 8 | EAR99 | e3 | MATTE TIN | 1.1W | GULL WING | 260 | 8 | 2 | Dual | 40 | 1.1W | 2 | Not Qualified | 20 ns | 30ns | 30 ns | 85 ns | 5A | 8V | SILICON | 8V | METAL-OXIDE SEMICONDUCTOR | 5A | 30A | 0.03Ohm | 2 P-Channel (Dual) | 30m Ω @ 5A, 4.5V | 450mV @ 250μA (Min) | 40nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SI7901EDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7901ednt1e3-datasheets-2349.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | 8 | 1.3W | 2 | Dual | PowerPAK® 1212-8 Dual | 2.5 μs | 4μs | 4 μs | 15 μs | 4.3A | 12V | 20V | 1.3W | 48mOhm | -20V | 2 P-Channel (Dual) | 48mOhm @ 6.3A, 4.5V | 1V @ 800μA | 4.3A | 18nC @ 4.5V | Logic Level Gate | 48 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| SI7214DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7214dnt1e3-datasheets-4713.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | 6 | Unknown | 8 | yes | EAR99 | Tin | No | e3 | 1.3W | C BEND | 260 | SI7214 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Powers | R-XDSO-C6 | 7 ns | 10ns | 6 ns | 19 ns | 5.9A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 3V | 4.6A | 0.04Ohm | 30V | 2 N-Channel (Dual) | 40m Ω @ 6.4A, 10V | 3V @ 250μA | 4.6A | 6.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||
| SI6969BDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si6969bdqt1e3-datasheets-4682.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 30mOhm | 8 | 830mW | SI6969 | 2 | Dual | 8-TSSOP | 20 ns | 35ns | 35 ns | 110 ns | -4.6A | 8V | 12V | 830mW | 30mOhm | -12V | 2 P-Channel (Dual) | 30mOhm @ 4.6A, 4.5V | 800mV @ 250μA | 4A | 25nC @ 4.5V | Logic Level Gate | 30 mΩ | |||||||||||||||||||||||||||||||||||||||
| SI6993DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6993dqt1e3-datasheets-4694.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | GULL WING | SI6993 | 8 | Dual | 830mW | 2 | Other Transistors | 13 ns | 14ns | 14 ns | 52 ns | -4.7A | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.6A | 0.031Ohm | 2 P-Channel (Dual) | 31m Ω @ 4.7A, 10V | 3V @ 250μA | 3.6A | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI7236DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7236dpt1ge3-datasheets-1565.pdf | PowerPAK® SO-8 Dual | 6 | 506.605978mg | yes | EAR99 | No | e3 | Matte Tin (Sn) | 46W | C BEND | 260 | SI7236 | 8 | 2 | Dual | 30 | 2 | FET General Purpose Power | R-XDSO-C6 | 10 ns | 15ns | 10 ns | 60 ns | 20.7A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 60A | 80A | 20V | 2 N-Channel (Dual) | 4000pF @ 10V | 5.2m Ω @ 20.7A, 4.5V | 1.5V @ 250μA | 60A | 105nC @ 10V | Standard | ||||||||||||||||||||||||||||||
| SI5947DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5947dut1e3-datasheets-4650.pdf | PowerPAK® ChipFET™ Dual | Lead Free | 6 | 58MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 10.4W | C BEND | 260 | SI5947 | 8 | Dual | 40 | 2.3W | 2 | Other Transistors | R-XDSO-C6 | 15ns | 10 ns | 25 ns | -6A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 5A | -20V | 2 P-Channel (Dual) | 480pF @ 10V | 58m Ω @ 3.6A, 4.5V | 1.5V @ 250μA | 6A | 17nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||
| SI5933CDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5933cdct1ge3-datasheets-1970.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 15 Weeks | 84.99187mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2.8W | C BEND | 260 | SI5933 | 8 | 2 | Dual | 30 | 2 | Other Transistors | 1 ns | 34ns | 34 ns | 22 ns | -3.7A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 10A | 0.144Ohm | 2 P-Channel (Dual) | 276pF @ 10V | 144m Ω @ 2.5A, 4.5V | 1V @ 250μA | 3.7A | 6.8nC @ 5V | Standard | |||||||||||||||||||||||||||
| SI5943DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5943dut1e3-datasheets-4651.pdf | PowerPAK® ChipFET™ Dual | 3mm | 750μm | 1.9mm | Lead Free | 64mOhm | 8.3W | SI5943 | 2 | Dual | PowerPAK® ChipFet Dual | 460pF | 5 ns | 15ns | 7 ns | 23 ns | -6A | 8V | 12V | 8.3W | 64mOhm | 2 P-Channel (Dual) | 460pF @ 6V | 64mOhm @ 3.6A, 4.5V | 1V @ 250μA | 6A | 15nC @ 8V | Logic Level Gate | 64 mΩ | |||||||||||||||||||||||||||||||||||||||
| SI6966DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6966dqt1ge3-datasheets-2331.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 157.991892mg | 8 | EAR99 | No | e3 | MATTE TIN | 830mW | GULL WING | 260 | SI6966 | 8 | Dual | 40 | 830mW | 2 | 11 ns | 9ns | 9 ns | 36 ns | 4.5A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 4A | 0.03Ohm | 20V | 2 N-Channel (Dual) | 30m Ω @ 4.5A, 4.5V | 1.4V @ 250μA | 4A | 20nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||
| SI6969DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6969dqt1e3-datasheets-2341.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 8 | 157.991892mg | 8 | EAR99 | e3 | MATTE TIN | 1.1W | GULL WING | 260 | SI6969 | 8 | 2 | Dual | 40 | 1.1W | 2 | Not Qualified | 25 ns | 35ns | 35 ns | 80 ns | 4.6A | 8V | SILICON | 12V | METAL-OXIDE SEMICONDUCTOR | 30A | 0.034Ohm | 2 P-Channel (Dual) | 34m Ω @ 4.6A, 4.5V | 450mV @ 250μA (Min) | 40nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SI6966EDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si6966edqt1e3-datasheets-2342.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 157.991892mg | 30mOhm | 8 | 1.25W | SI6966 | 2 | Dual | 1.25W | 2 | 8-TSSOP | 100 ns | 130ns | 130 ns | 420 ns | 5.2A | 12V | 20V | 1.25W | 30mOhm | 20V | 2 N-Channel (Dual) | 30mOhm @ 5.2A, 4.5V | 600mV @ 250μA (Min) | 25nC @ 4.5V | Logic Level Gate | 30 mΩ | ||||||||||||||||||||||||||||||||||||||
| SI6973DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si6973dqt1ge3-datasheets-2343.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | No | e3 | Matte Tin (Sn) | 830mW | GULL WING | 8 | Dual | 830mW | 2 | Other Transistors | 27 ns | 27ns | 43 ns | 93 ns | 4.1A | 8V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 0.03Ohm | 20V | 2 P-Channel (Dual) | 30m Ω @ 4.8A, 4.5V | 450mV @ 250μA (Min) | 30nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI7224DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7224dnt1ge3-datasheets-5443.pdf | PowerPAK® 1212-8 Dual | 3.3mm | 1.04mm | 3.3mm | 6 | 25 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 23W | C BEND | 260 | SI7224 | 8 | 2 | Dual | 30 | 2 | FET General Purpose Power | S-XDSO-C6 | 20 ns | 10ns | 10 ns | 15 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 17.8W 23W | 6A | 0.035Ohm | 30V | 2 N-Channel (Dual) | 570pF @ 15V | 35m Ω @ 6.5A, 10V | 2.2V @ 250μA | 14.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||
| SI6969DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si6969dqt1e3-datasheets-2341.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 8 | 1.1W | SI6969 | 2 | Dual | 8-TSSOP | 25 ns | 35ns | 40 ns | 80 ns | 4.6A | 8V | 12V | 1.1W | 34mOhm | -12V | 2 P-Channel (Dual) | 34mOhm @ 4.6A, 4.5V | 450mV @ 250μA (Min) | 40nC @ 4.5V | Logic Level Gate | 34 mΩ |
