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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| FDMD8540L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-fdmd8540l-datasheets-0104.pdf | 8-PowerWDFN | 12 Weeks | 94.85095mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 2.3W | NOT SPECIFIED | Dual | NOT SPECIFIED | 156A | 40V | 2 N-Channel (Half Bridge) | 7940pF @ 20V | 1.5m Ω @ 33A, 10V | 3V @ 250μA | 33A 156A | 113nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SLA5096 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/sanken-sla5096-datasheets-0162.pdf | 15-SIP Exposed Tab, Formed Leads | Lead Free | 15 | 12 Weeks | yes | EAR99 | SINGLE | NOT SPECIFIED | 15 | NOT SPECIFIED | 6 | Not Qualified | R-PSFM-T15 | 8A | SILICON | COMPLEX | N-CHANNEL | 55V | 55V | METAL-OXIDE SEMICONDUCTOR | 8A | 0.08Ohm | 3 N and 3 P-Channel (3-Phase Bridge) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SMA5127 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/sanken-sma5127-datasheets-0163.pdf | 12-SIP | 12 | 12 Weeks | yes | EAR99 | 8541.29.00.95 | 4W | SINGLE | NOT SPECIFIED | 12 | NOT SPECIFIED | 6 | Not Qualified | R-PSIP-T12 | 4A | SILICON | COMPLEX | SWITCHING | N-CHANNEL AND P-CHANNEL | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 4W | 4A | 8A | 0.55Ohm | 3 N and 3 P-Channel (3-Phase Bridge) | 150pF @ 10V | 550 Ω @ 2A, 4V | 2V @ 250μA | Standard | |||||||||||||||||||||||||||||||||||||||||||
| FDMS8095AC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/onsemiconductor-fdms8095ac-datasheets-9987.pdf | 8-PowerWDFN | 14 Weeks | 250mg | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 2.3W | 260 | Dual | NOT SPECIFIED | 1A | 150V | N and P-Channel | 2020pF @ 75V | 30m Ω @ 6.2A, 10V | 4V @ 250μA | 6.2A 1A | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| LN60A01EP-LF | Monolithic Power Systems Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -20°C~125°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/monolithicpowersystemsinc-ln60a01eslfz-datasheets-9498.pdf | 8-DIP (0.300, 7.62mm) | Lead Free | 8 | 16 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | 1.3W | DUAL | NOT SPECIFIED | 8 | NOT SPECIFIED | 3 | R-PDIP-T8 | 80mA | SILICON | COMMON GATE, 3 ELEMENTS WITH BUILT-IN RESISTOR | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 1.3W | 0.08A | 3 N-Channel, Common Gate | 190 Ω @ 10mA, 10V | 1.2V @ 250μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5873NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5873nlt1g-datasheets-5808.pdf | 8-PowerTDFN | Lead Free | 6 | 13 Weeks | 37.393021mg | 8 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | 3.1W | FLAT | 8 | Dual | 3.1W | 2 | FET General Purpose Power | R-PDSO-F6 | 10A | 20V | SILICON | DRAIN | 60V | METAL-OXIDE SEMICONDUCTOR | 190A | 0.013Ohm | 40 mJ | 60V | 2 N-Channel (Dual) | 1560pF @ 25V | 13m Ω @ 15A, 10V | 2.5V @ 250μA | 30.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| TC6321T-V/9U | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/microchiptechnology-tc6321tv9u-datasheets-9933.pdf | 8-VDFN Exposed Pad | 8 | 7 Weeks | TS 16949 | YES | DUAL | NO LEAD | 2 | R-PDSO-N8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 200V | 200V | METAL-OXIDE SEMICONDUCTOR | 7Ohm | N and P-Channel | 110pF @ 25V 200pF @ 25V | 7 Ω @ 1A, 10V, 8 Ω @ 1A, 10V | 2V @ 1mA, 2.4V @ 1mA | 2A Ta | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD6H840NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-nvmfd6h840nlt1g-datasheets-0561.pdf | 8-PowerTDFN | 48 Weeks | yes | 80V | 2 N-Channel (Dual) | 2002pF @ 40V | 6.9m Ω @ 20A, 10V | 2V @ 96μA | 14A Ta 74A Tc | 32nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C446NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | RoHS Compliant | /files/onsemiconductor-nvmfd5c446nt1g-datasheets-5140.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.2W Ta 89W Tc | 2 N-Channel (Dual) | 2450pF @ 25V | 2.9m Ω @ 30A, 10V | 3.5V @ 250μA | 24A Ta 127A Tc | 38nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3606AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms3606as-datasheets-9924.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 7 | 18 Weeks | 90mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1W | QUAD | Dual | 2.5W | 2 | FET General Purpose Power | R-PQFP-N7 | 5.5ns | 3.4 ns | 36 ns | 27A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2V | 1.3A | 75 pF | 30V | 2 N-Channel (Dual) Asymmetrical | 1695pF @ 15V | 8m Ω @ 13A, 10V | 2.7V @ 250μA | 13A 27A | 29nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| AOE6936 | Alpha & Omega Semiconductor Inc. | $0.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-VDFN Exposed Pad | 18 Weeks | 8-DFN (5x6) | 30V | 24W 39W | 2 N-Channel (Dual) Asymmetrical | 1150pF @ 15V 2270pF @ 15V | 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V | 2.2V @ 250μA, 2.1V @ 250μA | 55A Tc 85A Tc | 15nC @ 4.5V, 25nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8K15TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 2W | 9A | 30V | 2W | 2 N-Channel (Dual) | 630pF @ 10V | 21m Ω @ 9A, 10V | 2.5V @ 1mA | 8.5nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8J65TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 2W | *J65 | 7A | 30V | 2W | 2 P-Channel (Dual) | 1200pF @ 10V | 29m Ω @ 7A, 10V | 2.5V @ 1mA | 18nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMD82100 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdmd82100-datasheets-9993.pdf | 12-PowerWDFN | 12 | 12 Weeks | 82.3188mg | 12 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 1W | NO LEAD | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 2 | FET General Purpose Power | 9.4 ns | 3.2ns | 3.3 ns | 15 ns | 7A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 7A | 0.019Ohm | 15 pF | 100V | 2 N-Channel (Dual) | 1070pF @ 50V | 19m Ω @ 7A, 10V | 4V @ 250μA | 17nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| HTMN5130SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-htmn5130ssd13-datasheets-9999.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 21 Weeks | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | 1.7W | GULL WING | 2 | 3 ns | 2.5ns | 6.1 ns | 13.5 ns | 2.6A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | METAL-OXIDE SEMICONDUCTOR | 8A | 0.13Ohm | 2 N-Channel (Dual) | 218.7pF @ 25V | 130m Ω @ 3A, 10V | 3V @ 250μA | 8.9nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||
| NVMFD5483NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5483nlwft3g-datasheets-9880.pdf | 8-PowerTDFN | Lead Free | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 3.1W | 8 | 2 | Dual | 6.8 ns | 10.3ns | 23.5 ns | 37.5 ns | 24A | 20V | 60V | 2 N-Channel (Dual) | 668pF @ 25V | 36m Ω @ 15A, 10V | 2.5V @ 250μA | 6.4A | 23.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SP8J66TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2008 | 8-SOIC (0.154, 3.90mm Width) | *J66 | 9A | 30V | 2 P-Channel (Dual) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMD8260L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-fdmd8260l-datasheets-0031.pdf | 12-PowerWDFN | 800μm | 12 Weeks | 82.3188mg | 12 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 1W | 260 | 2 | Dual | NOT SPECIFIED | 1W | FET General Purpose Power | 150°C | 12 ns | 47 ns | 15A | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 64A | 60V | 2 N-Channel (Dual) | 5245pF @ 30V | 5.8m Ω @ 15A, 10V | 3V @ 250μA | 68nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||
| SP8M51TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohm-sp8m51tb1-datasheets-0956.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 26 Weeks | 8 | EAR99 | 2W | DUAL | GULL WING | NOT SPECIFIED | *M51 | NOT SPECIFIED | 2W | 2 | 2.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3A | 12A | 0.19Ohm | 100V | N and P-Channel | 3A 2.5A | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| SI8900EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8900edbt2e1-datasheets-0037.pdf | 10-UFBGA, CSPBGA | 10 | 13 Weeks | 40mOhm | 10 | yes | EAR99 | unknown | e1 | TIN SILVER COPPER | 1W | BOTTOM | BALL | 260 | SI8900 | 10 | Dual | 40 | 1W | 2 | FET General Purpose Power | Not Qualified | 4.5μs | 4.5 μs | 55 μs | 7A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 5.4A | 24mOhm | 20V | 2 N-Channel (Dual) Common Drain | 1V @ 1.1mA | 5.4A | Logic Level Gate | 24 mΩ | ||||||||||||||||||||||||||||||||||||
| AUIRF7316QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf7316qtr-datasheets-9942.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 8 Weeks | No SVHC | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | 2W | GULL WING | Dual | 2W | 2 | Other Transistors | 13 ns | 13ns | 32 ns | 34 ns | -4.9A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1V | 30A | 140 mJ | -30V | 2 P-Channel (Dual) | 710pF @ 25V | 58m Ω @ 4.9A, 10V | 3V @ 250μA | 34nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| FDPC8014AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-fdpc8014as-datasheets-0021.pdf | 8-PowerWDFN | 23 Weeks | 207.7333mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 2.3W | 260 | Dual | NOT SPECIFIED | 40A | 25V | 2.1W 2.3W | 2 N-Channel (Dual) Asymmetrical | 2375pF @ 13V | 3.8m Ω @ 20A, 10V | 2.5V @ 250μA | 20A 40A | 35nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C470NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | RoHS Compliant | /files/onsemiconductor-nvmfd5c470nt1g-datasheets-9433.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.1W Ta 28W Tc | 2 N-Channel (Dual) | 420pF @ 25V | 11.7m Ω @ 10A, 10V | 3.5V @ 250μA | 11.7A Ta 36A Tc | 8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS001N025DSD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/onsemiconductor-fdms001n025dsd-datasheets-9872.pdf | 8-PowerWDFN | 8 | 23 Weeks | ACTIVE (Last Updated: 3 weeks ago) | yes | not_compliant | e3 | Tin (Sn) | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N8 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | METAL-OXIDE SEMICONDUCTOR | 2.1W Ta 26W Tc 2.3W Ta 42W Tc | 19A | 381A | 0.00325Ohm | 121 mJ | 2 N-Channel (Dual) Asymmetrical | 1370pF 5105pF @ 13V | 3.25m Ω @ 19A, 10V, 920μ Ω @ 38A, 10V | 2.5V @ 320μA, 3V @ 1mA | 19A Ta 69A Tc 38A Ta 165A Tc | 30nC, 104nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| AUIRFN8459TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-auirfn8459tr-datasheets-9873.pdf | 8-PowerTDFN | 6 | 11 Weeks | 4.8mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | AEC-Q101 | 50W | FLAT | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 2 | R-PDSO-F6 | 10 ns | 55ns | 42 ns | 25 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 66 mJ | 2 N-Channel (Dual) | 2250pF @ 25V | 5.9m Ω @ 40A, 10V | 3.9V @ 50μA | 60nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||
| NVMFD5483NLWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5483nlwft3g-datasheets-9880.pdf | 8-PowerTDFN | Lead Free | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 3.1W | 8 | 3.1W | 2 | 6.8 ns | 10.3ns | 23.5 ns | 37.5 ns | 6.4A | 20V | 60V | 2 N-Channel (Dual) | 668pF @ 25V | 36m Ω @ 15A, 10V | 2.5V @ 250μA | 23.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7342QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf7342qtr-datasheets-9882.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 10 Weeks | No SVHC | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | 2W | GULL WING | Dual | 2W | 2 | Other Transistors | 14 ns | 10ns | 22 ns | 43 ns | 3.4A | 20V | SILICON | SWITCHING | 55V | METAL-OXIDE SEMICONDUCTOR | -1V | 0.105Ohm | 114 mJ | -55V | 2 P-Channel (Dual) | 690pF @ 25V | 105m Ω @ 3.4A, 10V | 3V @ 250μA | 38nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| NVMFD5C466NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | RoHS Compliant | /files/onsemiconductor-nvmfd5c466nwft1g-datasheets-9496.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3W Ta 38W Tc | 2 N-Channel (Dual) | 650pF @ 25V | 8.1m Ω @ 15A, 10V | 3.5V @ 250μA | 14A Ta 49A Tc | 11nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8097AC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdmc8097ac-datasheets-9754.pdf | 8-PowerWDFN | 10 Weeks | 196mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1.9W | 260 | Dual | NOT SPECIFIED | Other Transistors | 2.4A | N-CHANNEL AND P-CHANNEL | 150V | METAL-OXIDE SEMICONDUCTOR | 6.3A | N and P-Channel | 395pF @ 75V | 155m Ω @ 2.4A, 10V | 4V @ 250μA | 2.4A Ta 900mA Tc | 6.2nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDPC3D5N025X9D | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-fdpc3d5n025x9d-datasheets-9906.pdf | 12-PowerWQFN | 12 Weeks | 31.4mg | ACTIVE (Last Updated: 3 weeks ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Dual | NOT SPECIFIED | 25V | 26W | 2 N-Channel (Dual) | 3340pF @ 13V | 3.01m Ω @ 18A, 10V | 3V @ 250μA | 74A | 24nC @ 4.5V | Standard |
