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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| NVMFD5483NLWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5483nlwft3g-datasheets-9880.pdf | 8-PowerTDFN | Lead Free | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 3.1W | 8 | 3.1W | 2 | 6.8 ns | 10.3ns | 23.5 ns | 37.5 ns | 6.4A | 20V | 60V | 2 N-Channel (Dual) | 668pF @ 25V | 36m Ω @ 15A, 10V | 2.5V @ 250μA | 23.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7342QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf7342qtr-datasheets-9882.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 10 Weeks | No SVHC | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | 2W | GULL WING | Dual | 2W | 2 | Other Transistors | 14 ns | 10ns | 22 ns | 43 ns | 3.4A | 20V | SILICON | SWITCHING | 55V | METAL-OXIDE SEMICONDUCTOR | -1V | 0.105Ohm | 114 mJ | -55V | 2 P-Channel (Dual) | 690pF @ 25V | 105m Ω @ 3.4A, 10V | 3V @ 250μA | 38nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| NVMFD5C466NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | RoHS Compliant | /files/onsemiconductor-nvmfd5c466nwft1g-datasheets-9496.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3W Ta 38W Tc | 2 N-Channel (Dual) | 650pF @ 25V | 8.1m Ω @ 15A, 10V | 3.5V @ 250μA | 14A Ta 49A Tc | 11nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8097AC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdmc8097ac-datasheets-9754.pdf | 8-PowerWDFN | 10 Weeks | 196mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1.9W | 260 | Dual | NOT SPECIFIED | Other Transistors | 2.4A | N-CHANNEL AND P-CHANNEL | 150V | METAL-OXIDE SEMICONDUCTOR | 6.3A | N and P-Channel | 395pF @ 75V | 155m Ω @ 2.4A, 10V | 4V @ 250μA | 2.4A Ta 900mA Tc | 6.2nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPC3D5N025X9D | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-fdpc3d5n025x9d-datasheets-9906.pdf | 12-PowerWQFN | 12 Weeks | 31.4mg | ACTIVE (Last Updated: 3 weeks ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Dual | NOT SPECIFIED | 25V | 26W | 2 N-Channel (Dual) | 3340pF @ 13V | 3.01m Ω @ 18A, 10V | 3V @ 250μA | 74A | 24nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSG0813NDIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~155°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsg0813ndiatma1-datasheets-9911.pdf | 8-PowerTDFN | Contains Lead | 7 | 26 Weeks | 8 | yes | EAR99 | Tin | not_compliant | e3 | Halogen Free | 2.5W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N7 | 33A | 16V | 25V | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SOURCE | METAL-OXIDE SEMICONDUCTOR | 2.5W | 19A | 160A | 0.004Ohm | 30 mJ | 2 N-Channel (Dual) Asymmetrical | 1100pF @ 12V | 3m Ω @ 20A, 10V | 2V @ 250μA | 19A 33A | 8.4nC @ 4.5V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||||||||
| SI7946ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/vishaysiliconix-si7946adpt1ge3-datasheets-9918.pdf | PowerPAK® SO-8 Dual | 14 Weeks | EAR99 | NOT SPECIFIED | 2 | NOT SPECIFIED | 150V | 19.8W | 2 N-Channel (Dual) | 230pF @ 75V | 186m Ω @ 3A, 10V | 3.5V @ 250μA | 7.7A Tc | 6.5nC @ 7.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5483NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5483nlwft3g-datasheets-9880.pdf | 8-PowerTDFN | Lead Free | 6 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 3.1W | 8 | Dual | 3.1W | 2 | 6.8 ns | 10.3ns | 23.5 ns | 37.5 ns | 6.4A | 20V | 60V | 2 N-Channel (Dual) | 668pF @ 25V | 36m Ω @ 15A, 10V | 2.5V @ 250μA | 23.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLLD4951NFTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-ntlld4951nftwg-datasheets-9921.pdf | 8-PowerWDFN | 10 Weeks | EAR99 | e3 | Tin (Sn) | 810mW | FET General Purpose Powers | 6.3A | 30V | METAL-OXIDE SEMICONDUCTOR | 800mW 810mW | 13A | 2 N-Channel (Dual) Asymmetrical | 605pF @ 15V | 17.4m Ω @ 9A, 10V | 2.2V @ 250μA | 5.5A 6.3A | 12nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8M70TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | 8-SOIC (0.154, 3.90mm Width) | EAR99 | not_compliant | 650mW | NOT SPECIFIED | NOT SPECIFIED | Other Transistors | 2.5A | N-CHANNEL AND P-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | 3A | N and P-Channel | 180pF @ 25V | 1.63 Ω @ 1.5A, 10V | 4V @ 1mA | 3A 2.5A | 5.2nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7341GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7341gtrpbf-datasheets-9848.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | EAR99 | ULTRA LOW RESISTANCE | 2.4W | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | 5.1A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | METAL-OXIDE SEMICONDUCTOR | 2.4W | MS-012AA | 42A | 0.05Ohm | 140 mJ | 2 N-Channel (Dual) | 780pF @ 25V | 50m Ω @ 5.1A, 10V | 1V @ 250μA (Min) | 44nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L11AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipg20n06s4l11aatma1-datasheets-9802.pdf | 8-PowerVDFN | Contains Lead | 8 | 12 Weeks | 8 | yes | LOGIC LEVEL COMPATIBLE | not_compliant | Halogen Free | 65W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 20A | 60V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 60V | METAL-OXIDE SEMICONDUCTOR | 0.0112Ohm | 165 mJ | 2 N-Channel (Dual) | 4020pF @ 25V | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | 53nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9395MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf9395mtrpbf-datasheets-9852.pdf | DirectFET™ Isometric MC | 6 | 17 Weeks | 10 | EAR99 | No | e3 | Matte Tin (Sn) | 2.1W | BOTTOM | Dual | 2.1W | 1 | Other Transistors | R-XBCC-N6 | 19 ns | 142ns | 121 ns | 76 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 75A | 0.007Ohm | -30V | 2 P-Channel (Dual) | 3241pF @ 15V | 7m Ω @ 14A, 10V | 2.4V @ 50μA | 64nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L11ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-ipg20n06s4l11atma1-datasheets-9807.pdf | 8-PowerVDFN | Contains Lead | 8 | 12 Weeks | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | 65W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 11 ns | 3ns | 19 ns | 58 ns | 20A | 16V | 60V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | METAL-OXIDE SEMICONDUCTOR | 65W | 0.0112Ohm | 165 mJ | 2 N-Channel (Dual) | 4020pF @ 25V | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | 53nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| NTMFD5C466NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | RoHS Compliant | /files/onsemiconductor-ntmfd5c466nlt1g-datasheets-9813.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 5 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3W Ta 40W Tc | 2 N-Channel (Dual) | 997pF @ 25V | 7.4m Ω @ 10A, 10V | 2.2V @ 30μA | 14A Ta 52A Tc | 16nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDWS9520L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/onsemiconductor-fdws9520lf085-datasheets-9815.pdf | 8-PowerTDFN | 22 Weeks | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 75W Tc | 2 P-Channel (Dual) | 2370pF @ 20V | 12.5m Ω @ 20A, 10V | 3V @ 250μA | 60.8A Tc | 33nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5489NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5489nlt1g-datasheets-1954.pdf | 8-PowerTDFN | Lead Free | 2 Weeks | 37.393021mg | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 3W | 8 | 2 | Dual | FET General Purpose Power | 7 ns | 11ns | 21 ns | 31 ns | 12A | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 330pF @ 25V | 65m Ω @ 15A, 10V | 2.5V @ 250μA | 4.5A | 12.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5485NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5485nlt1g-datasheets-9824.pdf | 8-PowerTDFN | Lead Free | 4 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 2.9W | 8 | 2 | Dual | 9.5 ns | 26.6ns | 23.7 ns | 27.8 ns | 5.3A | 20V | 60V | 2 N-Channel (Dual) | 560pF @ 25V | 44m Ω @ 15A, 10V | 2.5V @ 250μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMD8900 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 12-PowerWDFN | 8 Weeks | 82.3188mg | 12 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | 2.1W | 260 | NOT SPECIFIED | 17A | 30V | 2 N-Channel (Dual) | 2605pF @ 15V | 4m Ω @ 19A, 10V | 2.5V @ 250μA | 19A 17A | 35nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4808DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4808dyt1e3-datasheets-9830.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 13 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | 8 | 2 | 40 | 2W | 2 | FET General Purpose Power | 8 ns | 10ns | 10 ns | 21 ns | 5.7A | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 800mV @ 250μA (Min) | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI4936ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4936adyt1e3-datasheets-5150.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 14 Weeks | 506.605978mg | 8 | No | 1.1W | SI4936 | 2 | Dual | 8-SO | 6 ns | 14ns | 5 ns | 30 ns | 4.4A | 20V | 30V | 1.1W | 36mOhm | 30V | 2 N-Channel (Dual) | 36mOhm @ 5.9A, 10V | 3V @ 250μA | 4.4A | 20nC @ 10V | Logic Level Gate | 36 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L11ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | /files/infineontechnologies-ipg20n06s4l11atma1-datasheets-9807.pdf | 8-PowerVDFN | 12 Weeks | 60V | 65W Tc | 2 N-Channel (Dual) | 4020pF @ 25V | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | 20A Tc | 53nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C668NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 | /files/onsemiconductor-nvmfd5c668nlt1g-datasheets-5009.pdf | 48 Weeks | yes | not_compliant | e3 | Tin (Sn) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5485NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5485nlt1g-datasheets-9824.pdf | 8-PowerTDFN | Lead Free | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 2.9W | 8 | 2 | Dual | 9.5 ns | 26.6ns | 23.7 ns | 27.8 ns | 5.3A | 20V | 60V | 60V | 2 N-Channel (Dual) | 560pF @ 25V | 44m Ω @ 15A, 10V | 2.5V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4901NFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntmfd4901nft1g-datasheets-1002.pdf | 8-PowerTDFN | Lead Free | 8 | 7 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1.2W | FLAT | 8 | 2 | 17.9A | 20V | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.1W 1.2W | 13.5A | 100A | 0.0035Ohm | 115 mJ | 2 N-Channel (Dual), Schottky | 1150pF @ 15V | 6.5m Ω @ 10A, 10V | 2.2V @ 250μA | 10.3A 17.9A | 9.7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| BSG0810NDIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~155°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsg0810ndiatma1-datasheets-9839.pdf | 8-PowerTDFN | Contains Lead | 7 | 26 Weeks | 8 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | 2.5W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N7 | 39A | 16V | 25V | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SOURCE | METAL-OXIDE SEMICONDUCTOR | 2.5W | 19A | 160A | 0.004Ohm | 30 mJ | 2 N-Channel (Dual) Asymmetrical | 1040pF @ 12V | 3m Ω @ 20A, 10V | 2V @ 250μA | 19A 39A | 8.4nC @ 4.5V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||||||||
| AOE6930 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-VDFN Exposed Pad | 18 Weeks | 30V | 24W 75W | 2 N-Channel (Dual) Asymmetrical | 1075pF @ 15V 5560pF @ 15V | 4.3m Ω @ 20A, 10V, 0.83m Ω @ 30A, 10V | 2.1V @ 250μA, 1.9V @ 250μA | 22A Tc 85A Tc | 15nC @ 4.5V, 65nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S415ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-ipg20n06s415atma2-datasheets-9711.pdf | 8-PowerVDFN | 5.15mm | 1mm | 6.15mm | 8 | 12 Weeks | 8 | yes | not_compliant | Halogen Free | 50W | FLAT | NOT SPECIFIED | Dual | NOT SPECIFIED | 50W | 2 | 12 ns | 2ns | 9 ns | 17 ns | 20A | 20V | 60V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.0155Ohm | 90 mJ | 60V | 2 N-Channel (Dual) | 2260pF @ 25V | 15.5m Ω @ 17A, 10V | 4V @ 20μA | 29nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||
| ZXMP3A17DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmp3a17dn8ta-datasheets-9648.pdf | -30V | -4.4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 12 Weeks | 73.992255mg | No SVHC | 70mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.1W | GULL WING | 260 | 8 | 40 | 2.1W | 2 | 1.74 ns | 2.87ns | 8.72 ns | 29.2 ns | 4.4A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 3.4A | 2 P-Channel (Dual) | 630pF @ 15V | 70m Ω @ 3.2A, 10V | 1V @ 250μA | 4.4A Ta | 8.28nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||
| BSO604NS2XUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-bso604ns2xuma1-datasheets-9719.pdf | 55V | 5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 Weeks | 8 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | e3 | Halogen Free | 2W | GULL WING | NOT SPECIFIED | BSO604NS2 | 8 | NOT SPECIFIED | 2 | Not Qualified | 8ns | 5A | 20V | 55V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2W | 5A | 20A | 0.044Ohm | 90 mJ | 2 N-Channel (Dual) | 870pF @ 25V | 35m Ω @ 2.5A, 10V | 2V @ 30μA | 26nC @ 10V | Logic Level Gate |
