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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| IRF7756GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | 8-TSSOP (0.173, 4.40mm Width) | 8 | EAR99 | 1W | IRF7756GPBF | Dual | 1W | 2 | Other Transistors | 4.3A | 8V | 12V | METAL-OXIDE SEMICONDUCTOR | -12V | 2 P-Channel (Dual) | 1400pF @ 10V | 40m Ω @ 4.3A, 4.5V | 900mV @ 250μA | 18nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7754GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2009 | 8-TSSOP (0.173, 4.40mm Width) | 8 | No | 1W | IRF7754GPBF | Dual | 1W | 2 | 8-TSSOP | 1.984nF | 9.8 ns | 18ns | 191 ns | 267 ns | 5.5A | 8V | 12V | 1W | -12V | 2 P-Channel (Dual) | 1984pF @ 6V | 25mOhm @ 5.4A, 4.5V | 900mV @ 250μA | 5.5A | 22nC @ 4.5V | Logic Level Gate | 25 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7379QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | 2010 | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | 2.5W | IRF7379QPBF | 2.5W | Other Transistors | 5.8A | 20V | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | N and P-Channel | 520pF @ 25V | 45m Ω @ 5.8A, 10V | 1V @ 250μA | 5.8A 4.3A | 25nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7304QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2010 | /files/infineontechnologies-irf7304qtrpbf-datasheets-5199.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | 2W | IRF7304QPBF | 2W | 8-SO | 610pF | 8.4 ns | 26ns | 33 ns | 51 ns | -4.7A | 12V | 20V | 2W | 140mOhm | 2 P-Channel (Dual) | 610pF @ 15V | 90mOhm @ 2.2A, 4.5V | 700mV @ 250μA | 4.3A | 22nC @ 4.5V | Logic Level Gate | 90 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7309QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2005 | /files/infineontechnologies-irf7309qtrpbf-datasheets-5202.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | 1.4W | IRF7309QPBF | 1.4W | 8-SO | 520pF | 3A | 20V | 30V | 1.4W | N and P-Channel | 520pF @ 15V | 50mOhm @ 2.4A, 10V | 1V @ 250μA | 4A 3A | 25nC @ 4.5V | Standard | 50 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7341QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2005 | /files/infineontechnologies-irf7341qtrpbf-datasheets-5206.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | No | 2.4W | IRF7341QPBF | 2.4W | 2 | 8-SO | 780pF | 9.2 ns | 7.7ns | 12.5 ns | 31 ns | 4.7A | 20V | 55V | 2.4W | 65mOhm | 2 N-Channel (Dual) | 780pF @ 25V | 50mOhm @ 5.1A, 10V | 1V @ 250μA (Min) | 5.1A | 44nC @ 10V | Logic Level Gate | 50 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| APTM20TDUM16PG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm20tdum16pg-datasheets-5214.pdf | SP6 | 21 | 6 | EAR99 | AVALANCHE RATED | unknown | 390W | UPPER | UNSPECIFIED | NOT SPECIFIED | 21 | NOT SPECIFIED | 390W | 6 | FET General Purpose Power | Not Qualified | R-XUFM-X21 | 104A | 30V | SILICON | 3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | METAL-OXIDE SEMICONDUCTOR | 0.019Ohm | 3000 mJ | 6 N-Channel (3-Phase Bridge) | 7220pF @ 25V | 19m Ω @ 52A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7313QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2010 | /files/infineontechnologies-irf7313qtrpbf-datasheets-5215.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | 2W | IRF7313QPBF | 2W | 8-SO | 650pF | 8.1 ns | 8.9ns | 17 ns | 26 ns | 6.5A | 20V | 30V | 2W | 46mOhm | 2 N-Channel (Dual) | 650pF @ 25V | 29mOhm @ 5.8A, 10V | 1V @ 250μA | 6.5A | 33nC @ 10V | Standard | 29 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| APTM20AM05FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm20am05ftg-datasheets-5167.pdf | SP4 | 15 | 4 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | NOT SPECIFIED | 15 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-XUFM-X15 | 333A | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 200V | 200V | METAL-OXIDE SEMICONDUCTOR | 1250W | 700A | 0.005Ohm | 1300 mJ | 2 N-Channel (Half Bridge) | 40800pF @ 25V | 5m Ω @ 166.5A, 10V | 4V @ 8mA | 1184nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| APTM20DHM10G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm20dhm10g-datasheets-5168.pdf | SP6 | 8 | 6 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | unknown | e1 | TIN SILVER COPPER | 694W | UPPER | UNSPECIFIED | NOT SPECIFIED | 8 | NOT SPECIFIED | 694W | 2 | Not Qualified | R-XUFM-X8 | 175A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 700A | 2 N-Channel (Dual) Asymmetrical | 13700pF @ 25V | 12m Ω @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| FDS8960C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-fds8960c-datasheets-5109.pdf | 7A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.9mm | Lead Free | 8 | 230.4mg | No SVHC | 24MOhm | 8 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | FAST SWITCHING | Tin | No | e3 | 2W | DUAL | GULL WING | 2 | 2W | 2 | Other Transistors | 150°C | 16ns | 5 ns | 20 ns | 7A | 25V | 35V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 900mW | 7A | 35V | N and P-Channel | 570pF @ 15V | 2 V | 24m Ω @ 7A, 10V | 3V @ 250μA | 7A 5A | 7.7nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||
| APTC80A15T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptc80a15t1g-datasheets-5175.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 277W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 277W | 2 | FET General Purpose Power | Not Qualified | 28A | 30V | SILICON | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 670 mJ | 2 N-Channel (Half Bridge) | 4507pF @ 25V | 150m Ω @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7343QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-irf7343qtrpbf-datasheets-5176.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | EAR99 | No | 2W | IRF7343QPBF | 2W | 2 | Other Transistors | 4.7A | 20V | N-CHANNEL AND P-CHANNEL | 55V | METAL-OXIDE SEMICONDUCTOR | N and P-Channel | 740pF @ 25V | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 4.7A 3.4A | 36nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7306QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2014 | /files/infineontechnologies-irf7306qtrpbf-datasheets-5182.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | No SVHC | 8 | No | 2W | IRF7306QPBF | 2W | 2 | 11 ns | 17ns | 18 ns | 25 ns | -3.6A | 20V | 30V | 2 P-Channel (Dual) | 440pF @ 25V | -1 V | 100m Ω @ 1.8A, 10V | 1V @ 250μA | 3.6A | 25nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50DHM35G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50dhm35g-datasheets-5186.pdf | SP6 | 8 | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 781W | UPPER | UNSPECIFIED | 8 | 781W | 2 | R-XUFM-X8 | 21 ns | 38ns | 93 ns | 75 ns | 99A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.039Ohm | 3000 mJ | 2 N-Channel (Dual) Asymmetrical | 14000pF @ 25V | 39m Ω @ 49.5A, 10V | 5V @ 5mA | 280nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||
| APTM50AM70FT1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptm50am70ft1g-datasheets-5188.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | 390W | UPPER | UNSPECIFIED | 12 | 390W | 2 | FET General Purpose Power | Not Qualified | 50A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.08Ohm | 2 N-Channel (Half Bridge) | 10800pF @ 25V | 84m Ω @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50DHM75TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm50dhm75tg-datasheets-5190.pdf | SP4 | 14 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | NOT SPECIFIED | 357W | 2 | FET General Purpose Power | Not Qualified | 46A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.09Ohm | 2 N-Channel (Dual) Asymmetrical | 5600pF @ 25V | 90m Ω @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| APTM120TDU57PG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP6 | 21 | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 21 | 390W | 6 | R-XUFM-X21 | 20 ns | 15ns | 45 ns | 160 ns | 17A | 30V | SILICON | 3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V 1.2kV | 1200V | METAL-OXIDE SEMICONDUCTOR | 0.57Ohm | 3000 mJ | 6 N-Channel (3-Phase Bridge) | 5155pF @ 25V | 684m Ω @ 8.5A, 10V | 5V @ 2.5mA | 187nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||
| APTM50DUM35TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP4 | 12 | 22 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 781W | UPPER | UNSPECIFIED | 12 | 781W | 2 | 21 ns | 38ns | 93 ns | 75 ns | 99A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 396A | 0.039Ohm | 3000 mJ | 2 N-Channel (Dual) | 14000pF @ 25V | 39m Ω @ 49.5A, 10V | 5V @ 5mA | 280nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||
| APTM60A23FT1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptm60a23ft1g-datasheets-5138.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | 208W | UPPER | UNSPECIFIED | 12 | 208W | 2 | Not Qualified | 20A | 30V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Half Bridge) | 5316pF @ 25V | 276m Ω @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50TDUM65PG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm50tdum65pg-datasheets-5140.pdf | SP6 | 21 | 6 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | NOT SPECIFIED | 21 | NOT SPECIFIED | 390W | 6 | FET General Purpose Power | Not Qualified | R-XUFM-X21 | 51A | 30V | SILICON | 3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 204A | 0.078Ohm | 3000 mJ | 6 N-Channel (3-Phase Bridge) | 7000pF @ 25V | 78m Ω @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| IRF7103QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf7103qtrpbf-datasheets-5141.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | EAR99 | No | 2.4W | IRF7103QPBF | 2.4W | 2 | FET General Purpose Power | 5.1 ns | 1.7ns | 2.3 ns | 15 ns | 3A | 20V | 50V | METAL-OXIDE SEMICONDUCTOR | 3A | 2 N-Channel (Dual) | 255pF @ 25V | 130m Ω @ 3A, 10V | 3V @ 250μA | 15nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7307QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-irf7307qtrpbf-datasheets-5154.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | 8 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | No | 2W | DUAL | GULL WING | IRF7307QPBF | 2W | 2 | Other Transistors | 5.2A | 12V | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | MS-012AA | 21A | 0.05Ohm | N and P-Channel | 660pF @ 15V | 50m Ω @ 2.6A, 4.5V | 700mV @ 250μA | 5.2A 4.3A | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| IRF7314QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2010 | /files/infineontechnologies-irf7314qtrpbf-datasheets-5150.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | 2.4W | IRF7314QPBF | 2.4W | 2 | 8-SO | 913pF | 18 ns | 26ns | 38 ns | 41 ns | -5.2A | 12V | 20V | 2.4W | 98mOhm | 2 P-Channel (Dual) | 913pF @ 15V | 58mOhm @ 5.2A, 4.5V | 700mV @ 250μA | 5.2A | 29nC @ 4.5V | Logic Level Gate | 58 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50DHM65TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm50dhm65tg-datasheets-5107.pdf | SP4 | 14 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | NOT SPECIFIED | 390W | 2 | Not Qualified | 51A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.078Ohm | 3000 mJ | 2 N-Channel (Dual) Asymmetrical | 7000pF @ 25V | 78m Ω @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| APTM50AM25FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/microsemicorporation-aptm50am25ftg-datasheets-5114.pdf | SP4 | 15 | 4 | yes | AVALANCHE RATED | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | NOT SPECIFIED | 15 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-XUFM-X15 | 149A | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 1250W | 0.025Ohm | 1300 mJ | 2 N-Channel (Half Bridge) | 29600pF @ 25V | 25m Ω @ 74.5A, 10V | 4V @ 8mA | 1200nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| APTM20DUM05TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/microsemicorporation-aptm20dum05tg-datasheets-5115.pdf | SP4 | 15 | 4 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | NOT SPECIFIED | 15 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-XUFM-X15 | 333A | SILICON | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 200V | 200V | METAL-OXIDE SEMICONDUCTOR | 1250W | 700A | 0.005Ohm | 1300 mJ | 2 N-Channel (Dual) | 40800pF @ 25V | 5m Ω @ 166.5A, 10V | 4V @ 8mA | 1184nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||
| APTM20DHM08G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP6 | 8 | 22 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 781W | UPPER | UNSPECIFIED | 8 | 781W | 2 | R-XUFM-X8 | 32 ns | 64ns | 116 ns | 88 ns | 208A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 0.01Ohm | 3000 mJ | 2 N-Channel (Dual) Asymmetrical | 14400pF @ 25V | 10m Ω @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||
| APTM20DHM20TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm20dhm20tg-datasheets-5119.pdf | SP4 | 14 | 4 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | NOT SPECIFIED | 2 | Not Qualified | 89A | SILICON | PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 200V | 200V | METAL-OXIDE SEMICONDUCTOR | 357W | 356A | 2500 mJ | 2 N-Channel (Dual) Asymmetrical | 6850pF @ 25V | 24m Ω @ 44.5A, 10V | 5V @ 2.5mA | 112nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| APTC80DDA29T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptc80dda29t3g-datasheets-5120.pdf | SP3 | 25 | 3 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 156W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | NOT SPECIFIED | 156W | 2 | FET General Purpose Power | Not Qualified | 15A | 30V | SILICON | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 60A | 670 mJ | 2 N-Channel (Dual) | 2254pF @ 25V | 290m Ω @ 7.5A, 10V | 3.9V @ 1mA | 90nC @ 10V | Standard |
