Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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NTZD3154NT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntzd3154nt1g-datasheets-3038.pdf | SOT-563, SOT-666 | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | YES | 250mW | FLAT | 260 | NTZD3154N | 6 | Dual | 40 | 250mW | 2 | Not Qualified | 4ns | 4 ns | 16 ns | 540mA | 6V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.54A | 0.55Ohm | 20 pF | 20V | 2 N-Channel (Dual) | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 2.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||
SI5933DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si5933dct1e3-datasheets-4639.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 84.99187mg | 8 | 1.1W | SI5933 | 2 | Dual | 1.1W | 2 | 1206-8 ChipFET™ | 30 ns | 30ns | 30 ns | 27 ns | -2.7A | 8V | 20V | 1.1W | 110mOhm | -20V | 2 P-Channel (Dual) | 110mOhm @ 2.7A, 4.5V | 1V @ 250μA | 2.7A | 7.7nC @ 4.5V | Logic Level Gate | 110 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
NTJD4001NT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntjd4001nt1g-datasheets-3034.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | YES | 272mW | GULL WING | NOT SPECIFIED | 6 | Dual | NOT SPECIFIED | 272mW | 2 | FET General Purpose Power | Not Qualified | 23ns | 23 ns | 94 ns | 250mA | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.25A | 2.5Ohm | 12 pF | 30V | 2 N-Channel (Dual) | 33pF @ 5V | 1.5 Ω @ 10mA, 4V | 1.5V @ 100μA | 1.3nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||||||||
AO4622 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/alphaomegasemiconductor-ao4622-datasheets-9781.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | No | 2W | DUAL | GULL WING | 8 | 2W | 2 | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 35A | N and P-Channel | 1100pF @ 10V | 23m Ω @ 7.3A, 10V | 2V @ 250μA | 18nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AOP607 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | RoHS Compliant | 2005 | /files/alphaomegasemiconductorinc-aop607-datasheets-4958.pdf | 8-DIP (0.300, 7.62mm) | 8 | 2.5W | 3.4A | 60V | N and P-Channel | 540pF @ 30V | 56m Ω @ 4.7A, 10V | 3V @ 250μA | 10.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTUD3128NT5G | ON Semiconductor | $2.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntud3128nt5g-datasheets-4885.pdf | SOT-963 | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | Nickel/Gold/Palladium (Ni/Au/Pd) | 125mW | FLAT | 260 | 6 | Dual | 40 | 125mW | 2 | FET General Purpose Power | Not Qualified | 24ns | 24 ns | 90 ns | 160mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 3Ohm | 20V | 2 N-Channel (Dual) | 9pF @ 15V | 3 Ω @ 100mA, 4.5V | 1V @ 250μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
FD6M033N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Power-SPM™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | /files/onsemiconductor-fd6m033n06-datasheets-4961.pdf | EPM15 | 15 | EPM15 | 6.01nF | 73A | 60V | 2 N-Channel (Dual) | 6010pF @ 25V | 3.3mOhm @ 40A, 10V | 4V @ 250μA | 73A | 129nC @ 10V | Standard | 3.3 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTLJD2105LTBG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntljd2105ltbg-datasheets-4889.pdf | 6-WDFN Exposed Pad | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | e3 | Matte Tin (Sn) | 520mW | C BEND | 265 | 6 | Dual | 40 | 520mW | 2 | Not Qualified | 2.5A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.05Ohm | 8V | N and P-Channel | 50m Ω @ 4A, 4.5V | 1V @ 250μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
NTUD3127CT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntud3127ct5g-datasheets-4891.pdf | SOT-963 | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | Nickel/Gold/Palladium (Ni/Au/Pd) | 125mW | FLAT | 260 | 6 | Dual | 40 | 125mW | 2 | Not Qualified | 37ns | 97 ns | 112 ns | 140mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3Ohm | 2.2 pF | 20V | N and P-Channel | 9pF @ 15V | 3 Ω @ 100mA, 4.5V | 1V @ 250μA | 160mA 140mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
IRF7507PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineon-irf7507pbf-datasheets-9755.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3.05mm | 910μm | 3.05mm | 8 | No SVHC | 8 | EAR99 | HIGH RELIABILITY | No | 1.25W | GULL WING | IRF7507PBF | Dual | 1.25W | 2 | Other Transistors | 2.4A | 12V | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.3A | 19A | 0.14Ohm | N and P-Channel | 260pF @ 15V | 700 mV | 140m Ω @ 1.7A, 4.5V | 700mV @ 250μA (Min) | 2.4A 1.7A | 8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
SIA911DJ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia911djt1e3-datasheets-4827.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 94MOhm | 6 | No | 6.5W | SIA911 | Dual | 1.9W | 2 | PowerPAK® SC-70-6 Dual | 355pF | 10ns | 10 ns | 20 ns | 3.6A | 8V | 20V | 6.5W | 94mOhm | 2 P-Channel (Dual) | 355pF @ 10V | 94mOhm @ 2.8A, 4.5V | 1V @ 250μA | 4.5A | 12.8nC @ 8V | Standard | 94 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
SI8901EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si8901edbt2e1-datasheets-4814.pdf | 6-MICRO FOOT®CSP | Lead Free | 6 | No SVHC | 60mOhm | 6 | yes | EAR99 | unknown | e1 | TIN SILVER COPPER | 1W | BOTTOM | BALL | 260 | SI8901 | 6 | Dual | 40 | 1.7W | 2 | Other Transistors | Not Qualified | 2.3 μs | 2.2μs | 2.2 μs | 1.3 μs | -4.4A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -450mV | 3.5A | 60mOhm | 20V | 2 P-Channel (Dual) Common Drain | 1V @ 350μA | 3.5A | Logic Level Gate | 60 mΩ | ||||||||||||||||||||||||||||||||||||||
NTHD4102PT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-nthd4102pt1g-datasheets-9202.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 8 | LAST SHIPMENTS (Last Updated: 2 weeks ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | YES | 1.1W | C BEND | NOT SPECIFIED | NTHD4102P | 8 | Dual | NOT SPECIFIED | 1.1W | 2 | Not Qualified | 12ns | 12 ns | 32 ns | 2.9A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | 2 P-Channel (Dual) | 750pF @ 16V | 80m Ω @ 2.9A, 4.5V | 1.5V @ 250μA | 8.6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
IRF7555TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2005 | /files/infineontechnologies-irf7555trpbf-datasheets-4858.pdf | -20V | -4.3A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3mm | 860μm | 3mm | Lead Free | 55mOhm | 8 | 1.25W | IRF7555PBF | Dual | 1.25W | 2 | Micro8™ | 1.066nF | 10 ns | 46ns | 64 ns | 60 ns | -4.3A | 12V | 20V | 1.25W | 55mOhm | -20V | 2 P-Channel (Dual) | 1066pF @ 10V | 55mOhm @ 4.3A, 4.5V | 1.2V @ 250μA | 4.3A | 15nC @ 5V | Logic Level Gate | 55 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
SIF912EDZ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sif912edzt1e3-datasheets-4855.pdf | PowerPAK® 2x5 | 1.6W | SIF912E | PowerPAK® (2x5) | 7.4A | 30V | 1.6W | 2 N-Channel (Dual) Common Drain | 19mOhm @ 7.4A, 4.5V | 1.5V @ 250μA | 7.4A | 15nC @ 4.5V | Logic Level Gate | 19 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTJD4158CT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntjd4158ct1g-datasheets-8583.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 5 Weeks | 6 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | YES | 270mW | GULL WING | NOT SPECIFIED | NTJD4158C | 6 | Dual | NOT SPECIFIED | 270mW | 2 | Not Qualified | 6.5ns | 6.5 ns | 13.5 ns | 880mA | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V 20V | METAL-OXIDE SEMICONDUCTOR | 0.25A | 2.5Ohm | 12 pF | -20V | N and P-Channel | 33pF @ 5V | 1.5 Ω @ 10mA, 4.5V | 1.5V @ 100μA | 250mA 880mA | 1.5nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
SIF902EDZ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sif902edzt1e3-datasheets-4863.pdf | PowerPAK® 2x5 | 6 | 111 Weeks | 6 | yes | EAR99 | No | e3 | MATTE TIN | 1.6W | FLAT | 260 | SIF902E | 6 | 2 | Dual | 40 | 2 | FET General Purpose Power | 1.7 μs | 2.3μs | 2.3 μs | 1 μs | 7A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 7A | 40A | 20V | 2 N-Channel (Dual) Common Drain | 22m Ω @ 7A, 4.5V | 1.5V @ 250μA | 14nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
SIA914DJ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia914djt1e3-datasheets-4841.pdf | PowerPAK® SC-70-6 Dual | 6 | 28.009329mg | EAR99 | e3 | MATTE TIN | 6.5W | C BEND | NOT SPECIFIED | SIA914 | 6 | 2 | Dual | NOT SPECIFIED | 2 | Not Qualified | S-PDSO-C6 | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.053Ohm | 2 N-Channel (Dual) | 400pF @ 10V | 53m Ω @ 3.7A, 4.5V | 1V @ 250μA | 11.5nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
FD6M045N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Power-SPM™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | /files/onsemiconductor-fd6m045n06-datasheets-4871.pdf | EPM15 | 15 | EPM15 | 3.89nF | 60A | 60V | 2 N-Channel (Dual) | 3890pF @ 25V | 4.5mOhm @ 40A, 10V | 4V @ 250μA | 60A | 87nC @ 10V | Standard | 4.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTLGD3502NT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntlgd3502nt2g-datasheets-4872.pdf | 6-VDFN Exposed Pad | Lead Free | 6 | 4 Weeks | 60MOhm | 6 | LIFETIME (Last Updated: 1 day ago) | yes | No | 8541.29.00.95 | e3 | Tin (Sn) | YES | 1.74W | 260 | NTLGD3502N | 6 | Dual | 40 | 1.74W | 2 | 7 ns | 17.5ns | 17.5 ns | 8.6 ns | 5.8A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 4.3A | 17.2A | 20V | 2 N-Channel (Dual) | 480pF @ 10V | 60m Ω @ 4.3A, 4.5V | 2V @ 250μA | 4.3A 3.6A | 4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
NTZD5110NT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntzd5110nt1g-datasheets-8130.pdf | SOT-563, SOT-666 | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | YES | 250mW | FLAT | NOT SPECIFIED | NTZD5110N | 6 | Dual | NOT SPECIFIED | 250mW | 2 | FET General Purpose Power | Not Qualified | 7.3ns | 7.3 ns | 63.7 ns | 294mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 0.294A | 60V | 2 N-Channel (Dual) | 24.5pF @ 20V | 1.6 Ω @ 500mA, 10V | 2.5V @ 250μA | 0.7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
SI4941EDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4941edyt1e3-datasheets-4556.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 2W | SI4941 | 2 | 8-SO | 5.5 μs | 11μs | 24 μs | 30 μs | 10A | 20V | 30V | 3.6W | 21mOhm | 2 P-Channel (Dual) | 21mOhm @ 8.3A, 10V | 2.8V @ 250μA | 10A | 70nC @ 10V | Logic Level Gate | 21 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7960DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7960dpt1e3-datasheets-4788.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 506.605978mg | Unknown | 21mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7960 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 12 ns | 12ns | 12 ns | 60 ns | 9.7A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 3V | 40A | 2 N-Channel (Dual) | 21m Ω @ 9.7A, 10V | 3V @ 250μA | 6.2A | 75nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
SI7983DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7983dpt1e3-datasheets-4787.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 8 | 1.4W | SI7983 | 2 | Dual | PowerPAK® SO-8 Dual | 35 ns | 60ns | 60 ns | 390 ns | 60A | 8V | 20V | 1.4W | 17mOhm | -20V | 2 P-Channel (Dual) | 17mOhm @ 12A, 4.5V | 1V @ 600μA | 7.7A | 74nC @ 4.5V | Logic Level Gate | 17 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
NTLJD4150PTBG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntljd4150ptbg-datasheets-4843.pdf | 6-WDFN Exposed Pad | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 700mW | NO LEAD | 260 | 6 | 40 | 1 | Other Transistors | Not Qualified | 1.8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 700mW | 2.7A | 14A | 0.135Ohm | 2 P-Channel (Dual) | 300pF @ 15V | 135m Ω @ 4A, 10V | 2V @ 250μA | 4.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
SI7958DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7958dpt1e3-datasheets-4780.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 506.605978mg | Unknown | 16.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7958 | 8 | 2 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 17 ns | 17ns | 17 ns | 66 ns | 11.3A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 40A | 61 mJ | 40V | 2 N-Channel (Dual) | 3 V | 16.5m Ω @ 11.3A, 10V | 3V @ 250μA | 7.2A | 75nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||
SI7844DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7844dpt1e3-datasheets-4755.pdf | PowerPAK® SO-8 Dual | 5.99mm | 1.07mm | 5mm | Lead Free | 6 | No SVHC | 22mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7844 | 8 | Dual | 30 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 8 ns | 10ns | 10 ns | 21 ns | 10A | 20V | 30V | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.4V | 6.4A | 30V | 2 N-Channel (Dual) | 2.4 V | 22m Ω @ 10A, 10V | 2.4V @ 250μA | 6.4A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||
SI7530DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7530dpt1e3-datasheets-4757.pdf | PowerPAK® SO-8 Dual | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.5W | C BEND | 260 | SI7530 | 8 | Dual | 40 | 2 | Other Transistors | R-XDSO-C6 | 9ns | 9 ns | 65 ns | 3A | 20V | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.4W 1.5W | 3A | 15A | 0.075Ohm | 11 mJ | 60V | N and P-Channel | 75m Ω @ 4.6A, 10V | 3V @ 250μA | 3A 3.2A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
SI4916DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4916dyt1e3-datasheets-4536.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | 18mOhm | 8 | yes | EAR99 | Tin | No | e3 | 3.5W | DUAL | FLAT | 260 | SI4916 | 8 | 2 | 30 | 2 | FET General Purpose Power | 9 ns | 13ns | 13 ns | 27 ns | 7.5A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 3.3W 3.5W | 10.5A | 40A | 30V | 2 N-Channel (Half Bridge) | 18m Ω @ 10A, 10V | 3V @ 250μA | 10A 10.5A | 10nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
SI7911DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7911dnt1e3-datasheets-4763.pdf | PowerPAK® 1212-8 Dual | 6 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7911 | 8 | Dual | 40 | 1.3W | 2 | Other Transistors | S-XDSO-C6 | 20 ns | 35ns | 35 ns | 70 ns | -5.7A | 8V | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.051Ohm | 2 P-Channel (Dual) | 51m Ω @ 5.7A, 4.5V | 1V @ 250μA | 4.2A | 15nC @ 4.5V | Logic Level Gate |
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