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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| NTMD4N03R2 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-ntmd4n03r2-datasheets-9574.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e0 | TIN LEAD | YES | GULL WING | 240 | 8 | 30 | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 4A | 12A | 0.06Ohm | 80 mJ | 2 N-Channel (Dual) | 400pF @ 20V | 60m Ω @ 4A, 10V | 3V @ 250μA | 4A | 16nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| PMDPB70EN,115 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-pn2222arlra-datasheets-7038.pdf | 6-UDFN Exposed Pad | 6-HUSON-EP (2x2) | 30V | 510mW | 2 N-Channel (Dual) | 130pF @ 15V | 57mOhm @ 3.5A, 10V | 2.5V @ 250μA | 3.5A | 4.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100A13SCG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm100a13scg-datasheets-9583.pdf | SP6 | Lead Free | 7 | 6 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | NOT SPECIFIED | 1.25kW | 2 | Not Qualified | R-XUFM-X7 | 9 ns | 24 ns | 50 ns | 65A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 1250W | 1300 mJ | 2 N-Channel (Half Bridge) | 15200pF @ 25V | 156m Ω @ 32.5A, 10V | 5V @ 6mA | 562nC @ 10V | Standard | ||||||||||||||||||||||||||||
| STS4DPF30L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | -30V | -4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.25mm | 4mm | Lead Free | 8 | No SVHC | 80mOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 2W | GULL WING | 260 | STS4D | 8 | Single | 30 | 2W | 2 | Other Transistors | 25 ns | 35ns | 35 ns | 125 ns | 4A | 16V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 4A | 16A | -30V | 2 P-Channel (Dual) | 1350pF @ 25V | 80m Ω @ 2A, 10V | 1V @ 250μA | 16nC @ 5V | Standard | ||||||||||||||||||||||
| APTMC120HM17CT3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | Bulk | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120hm17ct3ag-datasheets-9587.pdf | Module | 36 Weeks | SP3 | 1200V 1.2kV | 750W | 4 N-Channel | 5576pF @ 1000V | 17mOhm @ 100A, 20V | 4V @ 30mA | 147A Tc | 332nC @ 5V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTQD6968N | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-ntqd6968nr2-datasheets-2743.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | yes | LOGIC LEVEL COMPATIBLE | unknown | e0 | TIN LEAD | YES | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.39W | 6.2A | 18A | 0.03Ohm | 2 N-Channel (Dual) | 630pF @ 16V | 22m Ω @ 7A, 4.5V | 1.2V @ 250μA | 6.2A | 17nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| PMDPB38UNE,115 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-pn200rm-datasheets-6825.pdf | 6-UDFN Exposed Pad | DFN2020-6 | 20V | 510mW | 2 N-Channel (Dual) | 268pF @ 10V | 46mOhm @ 3A, 4.5V | 1V @ 250μA | 4A | 4.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDPB95XNE,115 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-pmdpb95xne115-datasheets-9553.pdf | 6-UDFN Exposed Pad | DFN2020-6 | 30V | 475mW | 2 N-Channel (Dual) | 143pF @ 15V | 120mOhm @ 2A, 4.5V | 1.5V @ 250μA | 2.4A | 2.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDPB42UN,115 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | /files/rochesterelectronicsllc-pn2222ag-datasheets-7378.pdf | 6-UDFN Exposed Pad | DFN2020-6 | 20V | 510mW | 2 N-Channel (Dual) | 185pF @ 10V | 50mOhm @ 3.9A, 4.5V | 1V @ 250μA | 3.9A | 3.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC80AM75SCG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptc80am75scg-datasheets-9558.pdf | SP6 | 7 | 22 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 568W | UPPER | UNSPECIFIED | 7 | 568W | 2 | R-XUFM-X7 | 10 ns | 13ns | 35 ns | 83 ns | 56A | 30V | SILICON | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 0.075Ohm | 2 N-Channel (Half Bridge) | 9015pF @ 25V | 75m Ω @ 28A, 10V | 3.9V @ 4mA | 364nC @ 10V | Standard | |||||||||||||||||||||||||||||
| APTMC170AM60CT1AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc170am60ct1ag-datasheets-9523.pdf | SP1 | 36 Weeks | 1 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 350W | NOT SPECIFIED | NOT SPECIFIED | 35 ns | 40ns | 70 ns | 150 ns | 53A | 1700V 1.7kV | 2 N Channel (Phase Leg) | 3080pF @ 1000V | 60m Ω @ 50A, 20V | 2.3V @ 2.5mA (Typ) | 50A Tc | 190nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||
| PMGD130UN,115 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-pn2369-datasheets-1938.pdf | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP | 20V | 390mW | 2 N-Channel (Dual) | 83pF @ 10V | 145mOhm @ 1.2A, 4.5V | 1V @ 250μA | 1.2A | 1.3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120TAM34CT3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | Bulk | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120tam34ct3ag-datasheets-9524.pdf | Module | 36 Weeks | SP3 | 1200V 1.2kV | 375W | 6 N-Channel (3-Phase Bridge) | 2788pF @ 1000V | 34mOhm @ 50A, 20V | 4V @ 15mA | 74A Tc | 161nC @ 5V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120TAM17CTPAG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120tam17ctpag-datasheets-9562.pdf | SP6 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 625W | NOT SPECIFIED | NOT SPECIFIED | 35 ns | 40ns | 70 ns | 150 ns | 147A | 1200V 1.2kV | 6 N-Channel (3-Phase Bridge) | 5600pF @ 1000V | 17m Ω @ 100A, 20V | 2.4V @ 20mA (Typ) | 147A Tc | 322nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120AM12CT3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120am12ct3ag-datasheets-9525.pdf | SP3 | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 925W | NOT SPECIFIED | NOT SPECIFIED | 35 ns | 40ns | 70 ns | 150 ns | 220A | 1200V 1.2kV | 2 N Channel (Phase Leg) | 8400pF @ 1000V | 12m Ω @ 150A, 20V | 2.4V @ 30mA (Typ) | 220A Tc | 483nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||
| PMGD175XN,115 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-pn2907ta-datasheets-4153.pdf | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP | 30V | 390mW | 2 N-Channel (Dual) | 75pF @ 15V | 225mOhm @ 1A, 4.5V | 1.5V @ 250μA | 900mA | 1.1nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM120H29FG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm120h29fg-datasheets-9526.pdf | SP6 | 12 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 780W | UPPER | UNSPECIFIED | 12 | 780W | 4 | R-XUFM-X12 | 20 ns | 15ns | 45 ns | 160 ns | 34A | 30V | SILICON | ISOLATED | SWITCHING | 1200V 1.2kV | 1200V | METAL-OXIDE SEMICONDUCTOR | 3000 mJ | 4 N-Channel (H-Bridge) | 10300pF @ 25V | 348m Ω @ 17A, 10V | 5V @ 5mA | 374nC @ 10V | Standard | |||||||||||||||||||||||||||||
| APTMC120AM09CT3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120am09ct3ag-datasheets-9528.pdf | SP3 | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 1.25kW | NOT SPECIFIED | NOT SPECIFIED | 35 ns | 40ns | 70 ns | 150 ns | 295A | 1200V 1.2kV | 1250W | 2 N Channel (Phase Leg) | 11000pF @ 1000V | 9m Ω @ 200A, 20V | 2.4V @ 40mA (Typ) | 295A Tc | 644nC @ 20V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||
| APTMC120AM16CD3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120am16cd3ag-datasheets-9529.pdf | D-3 Module | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 625W | 20ns | 131A | 1200V 1.2kV | 2 N-Channel (Half Bridge) | 4750pF @ 1000V | 20m Ω @ 100A, 20V | 2.2V @ 5mA (Typ) | 131A Tc | 246nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC60TLM14CAG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2014 | /files/microsemicorporation-aptmc60tlm14cag-datasheets-9530.pdf | SP6 | Lead Free | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 925W | 1 | Other Transistors | 35 ns | 40ns | 70 ns | 150 ns | 219A | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 215A | 4 N-Channel (Three Level Inverter) | 8400pF @ 1000V | 12m Ω @ 150A, 20V | 2.4V @ 30mA (Typ) | 219A Tc | 483nC @ 20V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||
| PHN203,518 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | ROHS3 Compliant | /files/rochesterelectronicsllc-phn203518-datasheets-9537.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2W | 2 N-Channel (Dual) | 560pF @ 20V | 30mOhm @ 7A, 10V | 2V @ 1mA | 6.3A | 14.6nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120TAM12CTPAG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120tam12ctpag-datasheets-9545.pdf | SP6 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 925W | NOT SPECIFIED | NOT SPECIFIED | 35 ns | 40ns | 70 ns | 150 ns | 220A | 1200V 1.2kV | 6 N-Channel (3-Phase Bridge) | 8400pF @ 1000V | 12m Ω @ 150A, 20V | 2.4V @ 30mA (Typ) | 220A Tc | 483nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||
| APTM100H18FG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm100h18fg-datasheets-9546.pdf | SP6 | 12 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 780W | UPPER | UNSPECIFIED | 12 | 780W | 4 | R-XUFM-X12 | 18 ns | 12ns | 40 ns | 155 ns | 43A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 172A | 0.21Ohm | 3000 mJ | 4 N-Channel (H-Bridge) | 10400pF @ 25V | 210m Ω @ 21.5A, 10V | 5V @ 5mA | 372nC @ 10V | Standard | ||||||||||||||||||||||||||||
| IRF7319PBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-irf7319pbf-datasheets-9548.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2W | N and P-Channel | 650pF @ 25V | 29mOhm @ 5.8A, 10V | 1V @ 250μA | 33nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50AM17FG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50am17fg-datasheets-9517.pdf | SP6 | Lead Free | 7 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | 1.25kW | 2 | R-XUFM-X7 | 21 ns | 38ns | 93 ns | 75 ns | 180A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 1250W | 0.017Ohm | 3000 mJ | 2 N-Channel (Half Bridge) | 28000pF @ 25V | 20m Ω @ 90A, 10V | 5V @ 10mA | 560nC @ 10V | Standard | |||||||||||||||||||||||||||
| APTMC60TLM55CT3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | /files/microsemicorporation-aptmc60tlm55ct3ag-datasheets-9519.pdf | SP3 | Lead Free | 22 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 250W | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | 12 ns | 14ns | 18 ns | 23 ns | 55A | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (Three Level Inverter) | 1900pF @ 1000V | 49m Ω @ 40A, 20V | 2.2V @ 2mA (Typ) | 48A Tc | 98nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||
| APTMC60TL11CT3AG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptmc60tl11ct3ag-datasheets-9520.pdf | SP3 | Lead Free | 22 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 125W | 1 | Other Transistors | 12 ns | 14ns | 18 ns | 23 ns | 28A | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (Three Level Inverter) | 950pF @ 1000V | 98m Ω @ 20A, 20V | 2.2V @ 1mA | 28A Tc | 49nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||
| APTM100TA35SCTPG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | /files/microsemicorporation-aptm100ta35sctpg-datasheets-9521.pdf | Module | Lead Free | 22 Weeks | EAR99 | 390W | 3 | FET General Purpose Power | 18 ns | 12ns | 40 ns | 155 ns | 22A | 30V | 1000V 1kV | METAL-OXIDE SEMICONDUCTOR | 6 N-Channel (3-Phase Bridge) | 5200pF @ 25V | 420m Ω @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| APTC60TAM21SCTPAG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptc60tam21sctpag-datasheets-9522.pdf | Module | Lead Free | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 625W | 3 | FET General Purpose Power | 116A | 600V | METAL-OXIDE SEMICONDUCTOR | 625W | 6 N-Channel (3-Phase Bridge) | 13000pF @ 100V | 21m Ω @ 88A, 10V | 3.6V @ 6mA | 580nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| APTM20AM05FG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/microsemicorporation-aptm20am05fg-datasheets-9480.pdf | SP6 | 7 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.136kW | UPPER | UNSPECIFIED | 7 | 2 | FET General Purpose Power | R-XUFM-X7 | 28 ns | 56ns | 99 ns | 81 ns | 317A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 1136W | 0.005Ohm | 2 N-Channel (Half Bridge) | 27400pF @ 25V | 5m Ω @ 158.5A, 10V | 5V @ 10mA | 448nC @ 10V | Standard |
