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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | Power Rating | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Row Spacing | Threshold Voltage | Power - Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| STL36DN6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl36dn6f7-datasheets-6664.pdf | 8-PowerVDFN | 1mm | 6 | 38 Weeks | ACTIVE (Last Updated: 8 months ago) | PowerFLATTM_8256945_DI_typeC | not_compliant | e3 | Matte Tin (Sn) | YES | 260 | STL36 | 2 | NOT SPECIFIED | 58W | 2 | 175°C | R-PDSO-F6 | 7.85 ns | 12.1 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 36A | 144A | 60V | 2 N-Channel (Dual) | 420pF @ 30V | 27m Ω @ 4.5A, 10V | 4V @ 250μA | 33A Tc | 8nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN10A08DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn10a08dn8ta-datasheets-6694.pdf | 100V | 2.1A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 250mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.8W | GULL WING | 260 | 8 | 2 | 40 | 1.8W | 1 | FET General Purpose Power | 3.4 ns | 2.2ns | 2.2 ns | 8 ns | 2.1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.25W | 9A | 100V | 2 N-Channel (Dual) | 405pF @ 50V | 250m Ω @ 3.2A, 10V | 2V @ 250μA (Min) | 1.6A | 7.7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| AO4803A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-ao4803a-datasheets-4409.pdf | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 8 | 2W | 2W | 2 | 5A | 20V | 30V | 2 P-Channel (Dual) | 520pF @ 15V | 46m Ω @ 5A, 10V | 2.5V @ 250μA | 11nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7304TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7304trpbf-datasheets-6191.pdf | -20V | -4.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 90mOhm | 8 | LOGIC LEVEL COMPATIBLE | No | 2W | 2W | GULL WING | IRF7304PBF | Dual | 2W | 2 | 8.4 ns | 26ns | 33 ns | 51 ns | -4.3A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | -700mV | 84 ns | 3.6A | -20V | 2 P-Channel (Dual) | 610pF @ 15V | -700 mV | 90m Ω @ 2.2A, 4.5V | 700mV @ 250μA | 4.3A | 22nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7306TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7306trpbf-datasheets-6230.pdf | -30V | -3.6A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 4.05mm | Lead Free | 8 | 12 Weeks | No SVHC | 100mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | Tin | No | e3 | 2W | GULL WING | IRF7306PBF | 2 | Dual | 2W | 2 | 150°C | 11 ns | 17ns | 18 ns | 25 ns | -3.6A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | -1V | 80 ns | 14A | -30V | 2 P-Channel (Dual) | 440pF @ 25V | -1 V | 100m Ω @ 1.8A, 10V | 1V @ 250μA | 3.6A | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SQJ570EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj570ept1ge3-datasheets-6239.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 100V | 27W | N and P-Channel | 650pF @ 25V 600pF @ 25V | 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V | 2.5V @ 250μA | 15A Tc 9.5A Tc | 20nC @ 10V, 15nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C680NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5c680nlt1g-datasheets-5075.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3W Ta 19W Tc | 2 N-Channel (Dual) | 350pF @ 25V | 28m Ω @ 5A, 10V | 2.2V @ 13μA | 7.5A Ta 26A Tc | 2nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9K25-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9k2540ex-datasheets-6150.pdf | SOT-1205, 8-LFPAK56 | 12 Weeks | 8 | 32W | LFPAK56D | 701pF | 18.2A | 40V | 32W | 19mOhm | 2 N-Channel (Dual) | 701pF @ 25V | 24mOhm @ 5A, 10V | 2.1V @ 1mA | 18.2A | 6.3nC @ 5V | Logic Level Gate | 24 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7314TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7314trpbf-datasheets-6218.pdf | -20V | -5.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 58mOhm | 8 | EAR99 | AVALANCHE RATED | Tin | No | e3 | 2W | GULL WING | 260 | IRF7314PBF | Dual | 30 | 2W | 2 | 15 ns | 40ns | 49 ns | 41 ns | -5.3A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | -700mV | 71 ns | 150 mJ | -20V | 2 P-Channel (Dual) | 780pF @ 15V | -700 mV | 58m Ω @ 2.9A, 4.5V | 700mV @ 250μA | 5.3A | 29nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI7212DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7212dnt1e3-datasheets-2260.pdf | PowerPAK® 1212-8 Dual | 6 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7212 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Power | S-XDSO-C6 | 10 ns | 12ns | 10 ns | 30 ns | 4.9A | 12V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.036Ohm | 5 mJ | 30V | 2 N-Channel (Dual) | 36m Ω @ 6.8A, 10V | 1.6V @ 250μA | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7K6R8-40E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7k6r840e115-datasheets-6213.pdf | SOT-1205, 8-LFPAK56 | 12 Weeks | 8 | Tin | 64W | 2 | Dual | 64W | 2 | LFPAK56D | 1.947nF | 8.9 ns | 15.4ns | 16.5 ns | 19.4 ns | 40A | 20V | 40V | 40V | 64W | 5.8mOhm | 40V | 2 N-Channel (Dual) | 1947pF @ 25V | 6.8mOhm @ 20A, 10V | 4V @ 1mA | 40A | 28.9nC @ 10V | Standard | 6.8 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C672NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5c672nlwft1g-datasheets-8712.pdf | 8-PowerTDFN | 1.1mm | 6 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | YES | FLAT | 260 | 2 | 30 | 3.1W | 2 | 175°C | R-PDSO-F6 | 11 ns | 22 ns | 11A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 3.1W Ta 45W Tc | 146A | 0.0168Ohm | 66 mJ | 60V | 2 N-Channel (Dual) | 793pF @ 25V | 11.9m Ω @ 10A, 10V | 2.2V @ 30μA | 12A Ta 49A Tc | 5.7nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002DW-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/diodesincorporated-2n7002dwq7f-datasheets-7748.pdf | 60V | 115mA | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 20 Weeks | 6.010099mg | No SVHC | 7.5Ohm | 6 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | 200mW | GULL WING | 260 | 6 | 2 | Dual | 40 | 200mW | 2 | FET General Purpose Power | 7 ns | 11 ns | 115mA | 20V | 60V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2V | 310mW | 0.115A | 5 pF | 70V | 2 N-Channel (Dual) | 50pF @ 25V | 2 V | 7.5 Ω @ 50mA, 5V | 2V @ 250μA | 230mA | Standard | |||||||||||||||||||||||||||||||||||||
| TSM4953DCS RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tsm4953dcsrlg-datasheets-5819.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8-SOP | 30V | 2.5W | 2 P-Channel (Dual) | 745pF @ 15V | 60mOhm @ 4.9A, 10V | 3V @ 250μA | 4.9A Ta | 28nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMHT6016LFJ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmht6016lfj13-datasheets-6350.pdf | 12-VDFN Exposed Pad | 24 Weeks | EAR99 | e3 | Matte Tin (Sn) | 260 | 30 | 4 N-Channel | 864pF @ 30V | 22m Ω @ 10A, 10V | 3V @ 250μA | 14.8A Ta | 8.4nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FS45MR12W1M1B11BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-fs45mr12w1m1b11boma1-datasheets-6390.pdf | Module | 16 Weeks | 1200V | 20mW Tc | 6 N-Channel (3-Phase Bridge) | 1840pF @ 800V | 45m Ω @ 25A, 15V (Typ) | 5.55V @ 10mA | 25A Tj | 62nC @ 15V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C650NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5c650nlwft1g-datasheets-5813.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.5W Ta 125W Tc | 2 N-Channel (Dual) | 2546pF @ 25V | 4.2m Ω @ 20A, 10V | 2.2V @ 98μA | 21A Ta 111A Tc | 16nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3660AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdms3660as-datasheets-6377.pdf | 8-PowerTDFN | 5mm | 1.1mm | 5.9mm | 6 | 13 Weeks | 171mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2.5W | FLAT | 2.5W | 2 | FET General Purpose Power | R-PDSO-F6 | 5ns | 5 ns | 38 ns | 30A | 20V | SILICON | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1W | MO-240AA | 13A | 70 pF | 30V | 2 N-Channel (Dual) | 2230pF @ 15V | 8m Ω @ 13A, 10V | 2.7V @ 250μA | 13A 30A | 30nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7342TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irf7342trpbf-datasheets-5781.pdf | -55V | -3.4A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 105mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | No | 2W | GULL WING | IRF7342PBF | 2 | Dual | 2W | 2 | 150°C | 14 ns | 10ns | 22 ns | 43 ns | -3.4A | 20V | SILICON | SWITCHING | 55V | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | -1V | 80 ns | 114 mJ | -55V | 2 P-Channel (Dual) | 690pF @ 25V | -1 V | 105m Ω @ 3.4A, 10V | 1V @ 250μA | 3.4A | 38nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SH8J66TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | /files/rohmsemiconductor-sh8j66tb1-datasheets-5844.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 20 Weeks | 8 | 2W | NOT SPECIFIED | *J66 | NOT SPECIFIED | 2W | 9A | 30V | -30V | 2 P-Channel (Dual) | 3000pF @ 10V | 18.5m Ω @ 9A, 10V | 2.5V @ 1mA | 35nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ918DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-siz918dtt1ge3-datasheets-5816.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | 14 Weeks | Unknown | 10 | EAR99 | No | 100W | SIZ918 | 2 | Dual | 2 | R-PDSO-N6 | 40 ns | 28A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.2V | 29W 100W | 16A | 50A | 16 mJ | 30V | 2 N-Channel (Half Bridge) | 790pF @ 15V | 12m Ω @ 13.8A, 10V | 2.2V @ 250μA | 16A 28A | 21nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM8568CS RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-tsm8568csrlg-datasheets-5810.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | YES | DUAL | GULL WING | 260 | 30 | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 6W | 8A | 60A | 0.02Ohm | 21.6 mJ | N and P-Channel | 646pF @ 15V 1089pF @ 15V | 16m Ω @ 8A, 10V, 24m Ω @ 7A, 10V | 2.5V @ 250μA | 15A Tc 13A Tc | 7nC @ 4.5V, 11nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDPB56XNEAX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmdpb56xneax-datasheets-6003.pdf | 6-UDFN Exposed Pad | 6 | 8 Weeks | AEC-Q101; IEC-60134 | YES | NO LEAD | 2 | R-PDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 485mW Ta | 3.1A | 0.072Ohm | 2 N-Channel (Dual) | 256pF @ 15V | 72m Ω @ 3.1A, 4.5V | 1.25V @ 250μA | 3.1A Ta | 5nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TT8M1TR | ROHM Semiconductor | $0.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-tt8m1tr-datasheets-6013.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | yes | EAR99 | e2 | TIN COPPER | 1W | DUAL | 260 | 8 | 10 | 2 | Other Transistors | Not Qualified | R-PDSO-F8 | 2.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1W | 0.09Ohm | N and P-Channel | 260pF @ 10V | 72m Ω @ 2.5A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS8961 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-nds8961-datasheets-6040.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 30V | 900mW | 2 N-Channel (Dual) | 190pF @ 15V | 100mOhm @ 3.1A, 10V | 3V @ 250μA | 3.1A | 10nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7319TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7319trpbf-datasheets-5882.pdf | 6.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 29mOhm | 8 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | Tin | No | 2W | DUAL | GULL WING | IRF7319PBF | 2W | 2 | 13ns | 32 ns | 34 ns | 6.5A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | 1V | 30A | 30V | N and P-Channel | 650pF @ 25V | 1 V | 29m Ω @ 5.8A, 10V | 1V @ 250μA | 33nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| SQJ974EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj974ept1ge3-datasheets-6081.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 100V | 48W | 2 N-Channel (Dual) | 1050pF @ 25V | 25.5mOhm @ 10A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76413DK8T | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-hufa76413dk8t-datasheets-6084.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | GULL WING | 260 | 8 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2.5W | 5.1A | 0.049Ohm | 260 mJ | 2 N-Channel (Dual) | 620pF @ 25V | 49m Ω @ 5.1A, 10V | 3V @ 250μA | 5.1A | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM250N02DCQ RFG | Taiwan Semiconductor Corporation | $0.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm250n02dcqrfg-datasheets-6056.pdf | 6-VDFN Exposed Pad | 6 | 18 Weeks | YES | NO LEAD | 2 | S-PDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 620mW | 5.8A | 0.025Ohm | 50 pF | 2 N-Channel (Dual) | 775pF @ 10V | 25m Ω @ 4A, 4.5V | 800mV @ 250μA | 5.8A Tc | 7.7nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM2537CQ RFG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-tsm2537cqrfg-datasheets-6108.pdf | 6-VDFN Exposed Pad | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 6.25W | N and P-Channel | 677pF @ 10V 744pF @ 10V | 30m Ω @ 6.4A, 4.5V, 55m Ω @ 5A, 4.5V | 1V @ 250μA | 11.6A Tc 9A Tc | 9.1nC @ 4.5V, 9.8nC @ 4.5V | Logic Level Gate, 1.8V Drive |
