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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Output Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Row Spacing | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| SI6968BEDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si6968bedqt1e3-datasheets-5597.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1.2mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | 22MOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1W | GULL WING | 260 | SI6968 | 8 | Dual | 30 | 1W | 2 | FET General Purpose Powers | 150°C | 245 ns | 330ns | 330 ns | 860 ns | 5.2A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 20V | 2 N-Channel (Dual) Common Drain | 22m Ω @ 6.5A, 4.5V | 1.6V @ 250μA | 18nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| IPG20N04S4L07ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipg20n04s4l07atma1-datasheets-5559.pdf | 8-PowerVDFN | Contains Lead | 8 | 12 Weeks | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | 65W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 9 ns | 4ns | 25 ns | 50 ns | 20A | 16V | 40V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | METAL-OXIDE SEMICONDUCTOR | 65W | 0.0072Ohm | 230 mJ | 2 N-Channel (Dual) | 3980pF @ 25V | 7.2m Ω @ 17A, 10V | 2.2V @ 30μA | 50nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| DMG6602SVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg6602svt7-datasheets-5649.pdf | SOT-23-6 Thin, TSOT-23-6 | 2.9mm | 1mm | 1.6mm | Lead Free | 6 | No SVHC | 95mOhm | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 840mW | DUAL | GULL WING | 260 | DMG6602 | 6 | 40 | 840mW | 2 | Other Transistors | 150°C | 3 ns | 5ns | 3 ns | 13 ns | 2.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.4A | 13A | 30V | N and P-Channel | 400pF @ 15V | 60m Ω @ 3.1A, 10V | 2.3V @ 250μA | 3.4A 2.8A | 13nC @ 10V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||
| IRF7309TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf7309trpbf-datasheets-5452.pdf | 4A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 4.05mm | Lead Free | 8 | 12 Weeks | No SVHC | 50mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | Tin | No | e3 | 1.4W | DUAL | GULL WING | IRF7309PBF | 1.4W | 2 | Other Transistors | 25 ns | 4A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | 1V | 4A | 16A | 30V | N and P-Channel | 520pF @ 15V | 1 V | 50m Ω @ 2.4A, 10V | 1V @ 250μA | 4A 3A | 25nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||
| ZXMD63P03XTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmd63p03xta-datasheets-5270.pdf | -30V | -1.7A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3.1mm | 950μm | 3.1mm | Contains Lead | 8 | 16 Weeks | 139.989945mg | No SVHC | 8 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 1.04W | GULL WING | 260 | 8 | 40 | 1.25W | 2 | 2.6 ns | 4.8ns | 4.8 ns | 13.1 ns | 2A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 2A | 2 P-Channel (Dual) | 270pF @ 25V | 185m Ω @ 1.2A, 10V | 1V @ 250μA (Min) | 7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SLA5212 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2012 | /files/sanken-sla5212-datasheets-5478.pdf | 15-SIP Exposed Tab, Formed Leads | Lead Free | 12 Weeks | yes | unknown | NOT SPECIFIED | NOT SPECIFIED | 8A | 35V | 3 N and 3 P-Channel (3-Phase Bridge) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7509TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf7509trpbf-datasheets-5480.pdf | 2.7A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3.048mm | 1.11mm | 3.048mm | Lead Free | 8 | 12 Weeks | No SVHC | 200mOhm | 8 | ULTRA LOW RESISTANCE | No | 1.25W | GULL WING | IRF7509PBF | 2 | Dual | 1.25W | 2 | 150°C | 12ns | 9.3 ns | 19 ns | 2.7A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 30V | N and P-Channel | 210pF @ 25V | 1 V | 110m Ω @ 1.7A, 10V | 1V @ 250μA | 2.7A 2A | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| IRF9910PBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-irf9910pbf-datasheets-5489.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 20V | 2W | 2 N-Channel (Dual) | 900pF @ 10V | 13.4mOhm @ 10A, 10V | 2.55V @ 250μA | 10A 12A | 11nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSL316CL6327HTSA1 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-bsl316cl6327htsa1-datasheets-5340.pdf | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 | 30V | 500mW | N and P-Channel | 94pF @ 15V | 160mOhm @ 1.4A, 10V | 2V @ 3.7μA | 1.4A 1.5A | 0.6nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60AM18SCG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptc60am18scg-datasheets-5348.pdf | SP6 | Lead Free | 7 | 16 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 833W | UPPER | UNSPECIFIED | 7 | 833W | 2 | R-XUFM-X7 | 21 ns | 30ns | 84 ns | 283 ns | 143A | 30V | SILICON | ISOLATED | SWITCHING | 600V | METAL-OXIDE SEMICONDUCTOR | 0.018Ohm | 1800 mJ | 2 N-Channel (Half Bridge) | 28000pF @ 25V | 18m Ω @ 71.5A, 10V | 3.9V @ 4mA | 1036nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| SMA5133 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/sanken-sma5133-datasheets-5351.pdf | 12-SIP | Lead Free | 12 | 12 Weeks | yes | SINGLE | NOT SPECIFIED | 12 | NOT SPECIFIED | 6 | Not Qualified | R-PSIP-T12 | 2.5A | SILICON | COMPLEX | N-CHANNEL | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 2Ohm | 3 N and 3 P-Channel (3-Phase Bridge) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7504TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7504trpbf-datasheets-5353.pdf | -20V | -1.7A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3mm | 860μm | 3mm | Lead Free | 8 | 12 Weeks | No SVHC | 270mOhm | 8 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | 1.25W | GULL WING | IRF7504PBF | Dual | 1.25W | 2 | 9.1 ns | 35ns | 43 ns | 38 ns | -1.7A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -700mV | 9.6A | -20V | 2 P-Channel (Dual) | 240pF @ 15V | 270m Ω @ 1.2A, 4.5V | 700mV @ 250μA | 1.7A | 8.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| IRF7379TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7379trpbf-datasheets-5371.pdf | 5.8A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 8 | No | e3 | Matte Tin (Sn) | 2.5W | DUAL | GULL WING | IRF7379PBF | 2.5W | 2 | 5.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 46A | 0.045Ohm | 30V | N and P-Channel | 520pF @ 25V | 45m Ω @ 5.8A, 10V | 1V @ 250μA | 5.8A 4.3A | 25nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| BSO200N03 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | /files/rochesterelectronicsllc-bso4804huma2-datasheets-2930.pdf | 8-SOIC (0.154, 3.90mm Width) | PG-DSO-8 | 30V | 1.4W | 2 N-Channel (Dual) | 1010pF @ 15V | 20mOhm @ 7.9A, 10V | 2V @ 13μA | 6.6A | 8nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6894A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fds6894a-datasheets-5397.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | GULL WING | 260 | 8 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 900mW | 8A | 32A | 0.017Ohm | 2 N-Channel (Dual) | 1676pF @ 10V | 17m Ω @ 8A, 4.5V | 1.5V @ 250μA | 8A | 24nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSL316CH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsl316ch6327xtsa1-datasheets-5342.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 10 Weeks | No SVHC | 6 | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | 500mW | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | Other Transistors | 1.5A | 20V | -30V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 1.6V | 1.4A | 7 pF | N and P-Channel Complementary | 282pF @ 15V | 160m Ω @ 1.4A, 10V | 2V @ 3.7μA | 1.4A 1.5A | 0.6nC @ 5V | Logic Level Gate, 4.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||
| IRF8915PBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-irf8915pbf-datasheets-5414.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 20V | 2W | 2 N-Channel (Dual) | 540pF @ 10V | 18.3mOhm @ 8.9A, 10V | 2.5V @ 250μA | 8.9A | 7.4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7530TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7530trpbf-datasheets-5416.pdf | 20V | 5.4A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3mm | 860μm | 3mm | Lead Free | 8 | 12 Weeks | No SVHC | 30mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | 1.3W | GULL WING | IRF7530PBF | Dual | 1.3W | 2 | 8.5 ns | 11ns | 16 ns | 36 ns | 5.4A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 1.2V | 40A | 33 mJ | 20V | 2 N-Channel (Dual) | 1310pF @ 15V | 1.2 V | 30m Ω @ 5.4A, 4.5V | 1.2V @ 250μA | 26nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||
| IRF9953TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf9953trpbf-datasheets-5399.pdf | -30V | -2.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | 250mOhm | 8 | HIGH RELIABILITY | No | 2W | GULL WING | IRF9953PBF | Dual | 2W | 2 | 9.7 ns | 14ns | 6.9 ns | 20 ns | 2.3A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 10A | 57 mJ | -30V | 2 P-Channel (Dual) | 190pF @ 15V | 250m Ω @ 1A, 10V | 1V @ 250μA | 12nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| SMA5118 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/sanken-sma5118-datasheets-5319.pdf | 12-SIP | Lead Free | 12 | 12 Weeks | yes | unknown | 8541.29.00.95 | 4W | SINGLE | NOT SPECIFIED | 12 | NOT SPECIFIED | 6 | Not Qualified | R-PSIP-T12 | 5A | SILICON | COMPLEX | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 4W | 5A | 10A | 45 mJ | 6 N-Channel (3-Phase Bridge) | 770pF @ 10V | 1.4 Ω @ 2.5A, 10V | 4V @ 1mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9952QPBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-irf9952qpbf-datasheets-5326.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2W | N and P-Channel | 190pF @ 15V | 100mOhm @ 2.2A, 10V | 1V @ 250μA | 3.5A 2.3A | 14nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SLA5201 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2012 | /files/sanken-sla5201-datasheets-5328.pdf | 15-SIP Exposed Tab, Formed Leads | 15 | 12 Weeks | yes | SINGLE | NOT SPECIFIED | 15 | NOT SPECIFIED | 6 | Not Qualified | R-PSIP-T15 | 7A | SILICON | COMPLEX | SWITCHING | NPN | 7A | 600V | 600V | 3 N and 3 P-Channel (3-Phase Bridge) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8424H-F085A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | Non-RoHS Compliant | /files/rochesterelectronicsllc-fdd8424hf085a-datasheets-5336.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-4L | 40V | 1.3W | N and P-Channel | 1000pF @ 20V | 24mOhm @ 9A, 10V | 3V @ 250μA | 9A 6.5A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7104PBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-irf7104pbf-datasheets-5338.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 20V | 2W | 2 P-Channel (Dual) | 290pF @ 15V | 250mOhm @ 1A, 10V | 3V @ 250μA | 2.3A | 25nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMQ8403 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GreenBridge™ PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdmq8403-datasheets-5230.pdf | 12-WDFN Exposed Pad | 5mm | 750μm | 4.5mm | Lead Free | 12 | 8 Weeks | 242.3mg | 12 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1.9W | DUAL | 1.9W | 4 | FET General Purpose Power | 4.1 ns | 1.2ns | 1.8 ns | 7.2 ns | 3.1A | 20V | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 6A | 0.11Ohm | 100V | 4 N-Channel (H-Bridge) | 215pF @ 15V | 110m Ω @ 3A, 10V | 4V @ 250μA | 5nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||
| TPS1120D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-tps1120d-datasheets-4207.pdf | -15V | -1.7A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.91mm | Lead Free | 8 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1.58mm | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 840mW | GULL WING | 260 | TPS1120 | 8 | 840mW | 2 | Other Transistors | -15V | 4.5 ns | 10ns | 10 ns | 13 ns | 1.17A | 2V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -1.25V | 0.4Ohm | 15V | 2 P-Channel (Dual) | 180m Ω @ 1.5A, 10V | 1.5V @ 250μA | 5.45nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SP8J5TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/rohmsemiconductor-sp8j5tb-datasheets-5220.pdf | -30V | -7A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | e2 | TIN COPPER | 2W | GULL WING | 260 | *J5 | 8 | 10 | 2 | Other Transistors | 20 ns | 50ns | 70 ns | 110 ns | 7A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 7A | 2 P-Channel (Dual) | 2600pF @ 10V | 28m Ω @ 7A, 10V | 2.5V @ 1mA | 25nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| FDS3992 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fds3992-datasheets-5060.pdf | 100V | 4.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | Lead Free | 8 | 11 Weeks | 187mg | No SVHC | 62MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2.5W | GULL WING | Dual | 2.5W | 2 | FET General Purpose Power | 8 ns | 23ns | 26 ns | 28 ns | 4.5A | 20V | 100V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 4V | 167 mJ | 100V | 2 N-Channel (Dual) | 750pF @ 25V | 4 V | 62m Ω @ 4.5A, 10V | 4V @ 250μA | 15nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||
| DF11MR12W1M1B11BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Chassis Mount | -40°C~150°C TJ | Tray | Not Applicable | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-df11mr12w1m1b11boma1-datasheets-5293.pdf | Module | 21 | EAR99 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 2 | R-XUFM-X21 | COMPLEX | ISOLATED | 1200V 1.2kV | 1200V | METAL-OXIDE SEMICONDUCTOR | 20mW | 55A | 100A | 2 N-Channel (Dual) | 3950pF @ 800V | 23m Ω @ 50A, 15V | 5.5V @ 20mA | 50A | 125nC @ 5V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120AM25CT3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptmc120am25ct3ag-datasheets-5296.pdf | SP3 | 3 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 500W | 105A | 1200V 1.2kV | 2 N-Channel (Half Bridge) | 3800pF @ 1000V | 25m Ω @ 80A, 20V | 2.2V @ 4mA (Typ) | 113A Tc | 197nC @ 20V | Silicon Carbide (SiC) |
