| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Case Connection | Application | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Diode Configuration |
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| U10CCT-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-u10bcte34w-datasheets-3138.pdf | TO-220-3 | 3 | 19 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 260 | 3 | Common Cathode | 40 | 2 | Rectifier Diodes | 10A | 55A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 55A | 150V | TO-220AB | 25 ns | 25 ns | Standard | 150V | 5A | 1 | 5A | 5μA @ 150V | 1.1V @ 5A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||
| U20DCT-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | TO-220-3 | 3 | 19 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 20A | 1V | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15μA | 200V | 100A | 200V | TO-220AB | 80 ns | 80 ns | Standard | 200V | 10A | 1 | 15μA @ 200V | 1V @ 10A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||
| MSAD200-16 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2011 | /files/microsemicorporation-mscd20016-datasheets-1421.pdf | D2 | 3 | 3 | EAR99 | UL RECOGNIZED | No | 8541.10.00.80 | e0 | TIN LEAD | UPPER | UNSPECIFIED | 3 | Common Anode | 2 | 200A | 1.3V | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1.6kV | 6.8kA | Standard | 1.6kV | 200A | 1 | 1600V | 9mA @ 1600V | 1.3V @ 300A | 1 Pair Common Anode | |||||||||||||||||||||||||||||
| STTH20LCD06CG-TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth20lcd06cfp-datasheets-9439.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 245 | STTH2 | 3 | Common Cathode | 2 | Rectifier Diodes | R-PSSO-G2 | 20A | 2.35V | 80A | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 600V | 80A | 600V | 50 ns | 230 ns | Standard | 600V | 10A | 1 | 1μA @ 600V | 2V @ 10A | 175°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||
| SBT100-16JS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2006 | /files/onsemiconductor-sbt10016js-datasheets-3514.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | EAR99 | HIGH RELIABILITY, LOW NOISE | 8541.10.00.80 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | SINGLE | 3 | Common Cathode | 2 | Not Qualified | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-220AB | Schottky | 160V | 10A | 100A | 1 | 200μA @ 160V | 880mV @ 5A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||
| MSKD100-08 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2011 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | D1 | Lead Free | 3 | 3 | EAR99 | UL RECOGNIZED | No | 8541.10.00.80 | UPPER | UNSPECIFIED | 3 | Common Cathode | 2 | Rectifier Diodes | 100A | 1.35V | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5mA | 800V | 2.5kA | Standard | 800V | 100A | 1 | 5mA @ 800V | 1.35V @ 300A | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||
| MSCD60-08 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2011 | /files/microsemicorporation-mscd6012-datasheets-1099.pdf | D1 | 93mm | 30.5mm | 21mm | 3 | 1 | EAR99 | UL RECOGNIZED | No | UPPER | UNSPECIFIED | 3 | 2 | Rectifier Diodes | R-XUFM-X3 | 60A | 60A | 1.15V | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5mA | 800V | 1.15kA | Standard | 800V | 60A | 1 | 800V | 5mA @ 800V | 1.3V @ 200A | 1 Pair Series Connection | |||||||||||||||||||||||||||
| MSCD36-12 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2011 | /files/microsemicorporation-mscd3608-datasheets-3847.pdf | D1 | 3 | 3 | EAR99 | UL RECOGNIZED | No | 8541.10.00.80 | UPPER | UNSPECIFIED | 3 | 2 | Rectifier Diodes | 36A | 1.25V | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5mA | 1.2kV | 650A | Standard | 1.2kV | 36A | 1 | 1200V | 5mA @ 1200V | 1.25V @ 100A | 1 Pair Series Connection | |||||||||||||||||||||||||||||||
| MSCD120-16 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2011 | /files/microsemicorporation-mscd12012-datasheets-1181.pdf | D1 | 3 | 3 | no | EAR99 | UL RECOGNIZED | No | 8541.10.00.80 | e0 | TIN LEAD | UPPER | UNSPECIFIED | 3 | 2 | 120A | 1.43V | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 6mA | 1.6kV | 2.8kA | Standard | 1.6kV | 120A | 1 | 1600V | 6mA @ 1600V | 1.43V @ 300A | 1 Pair Series Connection | |||||||||||||||||||||||||||||
| U30CCT-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | TO-220-3 | 3 | 19 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 30A | 160A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 150V | 160A | 150V | TO-220AB | 45 ns | 45 ns | Standard | 150V | 15A | 1 | 20μA @ 150V | 1.05V @ 15A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||
| SBLB1630CTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-sbl1640cthe345-datasheets-3005.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | SBLB1630CT | 3 | Common Cathode | 2 | Rectifier Diodes | R-PSSO-G2 | 16A | 250A | 500μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 30V | 250A | Schottky | 30V | 8A | 1 | 8A | 500μA @ 30V | 550mV @ 8A | -40°C~125°C | 1 Pair Common Cathode | ||||||||||||||||||||||||
| SBR100-10J | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2004 | /files/onsemiconductor-sbr10010j-datasheets-3429.pdf | TO-220-3 Full Pack | Lead Free | 3 | yes | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | SINGLE | 3 | Common Cathode | 2 | Not Qualified | R-PSFM-T3 | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-220AB | Schottky | 100V | 10A | 80A | 1 | 100μA @ 50V | 850mV @ 5A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||
| SBT150-06J | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2002 | /files/onsemiconductor-sbt15006j-datasheets-3430.pdf | TO-220-3 Full Pack | 3 | 3 | EAR99 | HIGH RELIABILITY, LOW NOISE | 8541.10.00.80 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | SINGLE | 3 | Common Cathode | 2 | Not Qualified | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-220AB | Schottky | 60V | 15A | 100A | 1 | 7.5A | 200μA @ 30V | 580mV @ 6A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||
| SBT250-04J | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2005 | /files/onsemiconductor-sbt25004j-datasheets-3431.pdf | TO-220-3 Full Pack | 3 | 3 | EAR99 | HIGH RELIABILITY, LOW NOISE | 8541.10.00.80 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | SINGLE | SBT250-04 | 3 | Common Cathode | 2 | Not Qualified | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-220AB | Schottky | 40V | 25A | 120A | 1 | 12.5A | 300μA @ 20V | 550mV @ 10A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||
| UGF8JCT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-ugb8hcthe345-datasheets-3326.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 8A | 65A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 65A | 600V | TO-220AB | 50 ns | 50 ns | Standard | 600V | 4A | 1 | 8A | 30μA @ 600V | 1.75V @ 4A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||
| SBS811-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2007 | /files/onsemiconductor-sbs811tle-datasheets-3437.pdf | 8-SMD, Flat Lead | 2.9mm | 750μm | 2.3mm | Lead Free | 8 | 8 | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | YES | SBS811 | 8 | Dual | 2 | Other Diodes | 2A | 400mV | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10A | 1.25mA | 30V | 10A | 15V | 20 ns | Schottky | 30V | 2A | 1 | 2A | 1.25mA @ 15V | 400mV @ 2A | -55°C~125°C | 2 Independent | |||||||||||||||||||||||
| SBLB25L20CT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-sbl25l20cte345-datasheets-3033.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.45mm | 4.83mm | 9.14mm | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | SBLB25L20CT | 3 | Common Cathode | 40 | 2 | Rectifier Diodes | R-PSSO-G2 | 25A | 180A | 900μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 900μA | 20V | 180A | Schottky | 20V | 12.5A | 1 | 900μA @ 20V | 490mV @ 12.5A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||
| UG18DCTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-ugf18bcte345-datasheets-8801.pdf | TO-220-3 | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 18A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 175A | TO-220AB | 30 ns | Standard | 200V | 18A | 1 | 9A | 10μA @ 200V | 1.1V @ 9A | -65°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||
| MBRF20H60CTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | TO-220-3 Full Pack, Isolated Tab | 3 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 20A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | TO-220AB | Schottky | 60V | 10A | 1 | 100μA @ 60V | 710mV @ 10A | -65°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||
| SBLB2030CTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-sbl2040cthe345-datasheets-3048.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | SBLB2030CT | 3 | Common Cathode | 2 | Rectifier Diodes | R-PSSO-G2 | 20A | 250A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 30V | 250A | Schottky | 30V | 10A | 1 | 1mA @ 30V | 600mV @ 10A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||
| MBR25H60CTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbr25h45cthe345-datasheets-2454.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | FREEWHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 30A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | TO-220AB | Schottky | 60V | 15A | 1 | 100μA @ 60V | 700mV @ 15A | -65°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||
| MSKD36-16 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2011 | /files/microsemicorporation-mscd3608-datasheets-3847.pdf | D1 | 3 | 3 | no | EAR99 | UL RECOGNIZED | No | 8541.10.00.80 | e0 | TIN LEAD | UPPER | UNSPECIFIED | 3 | Common Cathode | 2 | 36A | 1.25V | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5mA | 1.6kV | 650A | Standard | 1.6kV | 36A | 1 | 1600V | 5mA @ 1600V | 1.25V @ 100A | 1 Pair Common Cathode | ||||||||||||||||||||||||||||
| SBLB1040CTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-sbl1040cte345-datasheets-6173.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | SBLB1040CT | 3 | Common Cathode | 2 | Rectifier Diodes | R-PSSO-G2 | 10A | 175A | 500μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 40V | 175A | Schottky | 40V | 5A | 1 | 5A | 500μA @ 40V | 550mV @ 5A | -40°C~125°C | 1 Pair Common Cathode | ||||||||||||||||||||||||
| SBT80-10LS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2006 | /files/onsemiconductor-sbt8010ls-datasheets-3471.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | EAR99 | HIGH RELIABILITY, LOW NOISE | 8541.10.00.80 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | SINGLE | SBT80-10 | 3 | Common Cathode | 2 | Not Qualified | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-220AB | Schottky | 100V | 8A | 60A | 1 | 8A | 100μA @ 50V | 800mV @ 3A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||
| SBL1630CT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-sbl1640cthe345-datasheets-3005.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | SBL1630CT | 3 | Common Cathode | 2 | Rectifier Diodes | 16A | 250A | 500μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 30V | 250A | TO-220AB | Schottky | 30V | 8A | 1 | 8A | 500μA @ 30V | 550mV @ 8A | -40°C~125°C | 1 Pair Common Cathode | |||||||||||||||||||||||||
| UG8JCT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-ugb8hcthe345-datasheets-3326.pdf | TO-220-3 | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 8A | 1.75V | 65A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 65A | 600V | TO-220AB | 50 ns | 50 ns | Standard | 600V | 4A | 1 | 8A | 30μA @ 600V | 1.75V @ 4A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||
| UB10BCT-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-u10bcte34w-datasheets-3138.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 19 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 3 | Common Cathode | 40 | 2 | Rectifier Diodes | R-PSSO-G2 | 10A | 55A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 55A | 100V | 25 ns | 25 ns | Standard | 100V | 5A | 1 | 5A | 5μA @ 100V | 1.1V @ 5A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||
| SBLF1630CT-E3/45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBL1640CT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-sbl1640cthe345-datasheets-3005.pdf | TO-220-3 | Lead Free | 3 | 3 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | SBL1640CT | 3 | Common Cathode | 2 | Rectifier Diodes | 16A | 550mV | 250A | 500μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 40V | 250A | TO-220AB | Schottky | 40V | 8A | 1 | 8A | 500μA @ 40V | 550mV @ 8A | -40°C~125°C | 1 Pair Common Cathode | |||||||||||||||||||||||
| UGF8HCTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-ugb8hcthe345-datasheets-3326.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 8A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 65A | TO-220AB | 50 ns | Standard | 500V | 4A | 1 | 8A | 30μA @ 500V | 1.75V @ 4A | -55°C~150°C | 1 Pair Common Cathode |
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