Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Case Connection | Application | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration |
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UGF8HCTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-ugb8hcthe345-datasheets-3326.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 8A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 65A | TO-220AB | 50 ns | Standard | 500V | 4A | 1 | 8A | 30μA @ 500V | 1.75V @ 4A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||
MBRF3045CT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbrb3045cte381-datasheets-5390.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | MBRF3045CT | 3 | Common Cathode | 2 | Rectifier Diodes | 30A | 200A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 45V | 200A | TO-220AB | Schottky | 45V | 15A | 1 | 1mA @ 45V | 600mV @ 20A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||
SBT80-06LS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2006 | /files/onsemiconductor-sbt8006ls-datasheets-3371.pdf | TO-220-3 Full Pack | 3 | 3 | EAR99 | HIGH RELIABILITY, LOW NOISE | 8541.10.00.80 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | SINGLE | 3 | Common Cathode | 2 | Not Qualified | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-220AB | Schottky | 60V | 8A | 80A | 1 | 8A | 100μA @ 10V | 580mV @ 3A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||
SBLF1640CT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-sbl1640cthe345-datasheets-3005.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 3 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 16A | 250A | 500μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 40V | 250A | TO-220AB | Schottky | 40V | 8A | 1 | 8A | 500μA @ 40V | 550mV @ 8A | -40°C~125°C | 1 Pair Common Cathode | |||||||||||||||||||||
UGF8HCT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-ugb8hcthe345-datasheets-3326.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 8A | 65A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 65A | 500V | TO-220AB | 50 ns | 50 ns | Standard | 500V | 4A | 1 | 8A | 30μA @ 500V | 1.75V @ 4A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||
UG10FCTHE3/45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UG18BCTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-ugf18bcte345-datasheets-8801.pdf | TO-220-3 | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 18A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 175A | TO-220AB | 30 ns | Standard | 100V | 18A | 1 | 9A | 10μA @ 100V | 1.1V @ 9A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||
UG8HCTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-ugb8hcthe345-datasheets-3326.pdf | TO-220-3 | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 8A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 65A | TO-220AB | 50 ns | Standard | 500V | 4A | 1 | 8A | 30μA @ 500V | 1.75V @ 4A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||
UG10BCTHE3/45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SBL2030CTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-sbl2040cthe345-datasheets-3048.pdf | TO-220-3 | 3 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | SBL2030CT | 3 | Common Cathode | 2 | Rectifier Diodes | R-PSFM-T3 | 20A | 250A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 30V | 250A | TO-220AB | Schottky | 30V | 10A | 1 | 1mA @ 30V | 600mV @ 10A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||
SBT150-04J | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2005 | /files/onsemiconductor-sbt15004j-datasheets-3403.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | EAR99 | HIGH RELIABILITY, LOW NOISE | 8541.10.00.80 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | SINGLE | 3 | Common Cathode | 2 | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-220AB | Schottky | 40V | 15A | 100A | 1 | 7.5A | 200μA @ 20V | 550mV @ 6A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||
SBL1030CTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-sbl1040cte345-datasheets-6173.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | SBL1030CT | 3 | Common Cathode | 2 | Rectifier Diodes | 10A | 175A | 500μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 30V | 175A | TO-220AB | Schottky | 30V | 5A | 1 | 5A | 500μA @ 30V | 550mV @ 5A | -40°C~125°C | 1 Pair Common Cathode | ||||||||||||||||||||
UG18ACTHE3/45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UB16DCT-E3/4W |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UF10CCT-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-u10bcte34w-datasheets-3138.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | 3 | No | Common Cathode | ITO-220AB | 10A | 55A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 100V | 55A | 100V | 25 ns | 25 ns | Standard | 150V | 5A | 150V | 5μA @ 150V | 1.1V @ 5A | 5A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||
UGB8JCTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-ugb8hcthe345-datasheets-3326.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | 3 | Common Cathode | 30 | 2 | Rectifier Diodes | R-PSSO-G2 | 8A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 65A | 50 ns | Standard | 600V | 4A | 1 | 8A | 30μA @ 600V | 1.75V @ 4A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||
MBR20H90CT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbrb20h100cte381-datasheets-3267.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 20A | 250A | 4.5μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 4.5μA | 90V | 250A | TO-220AB | Schottky | 90V | 10A | 1 | 4.5μA @ 90V | 770mV @ 10A | -65°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||
MBRF25H35CTHE3/45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UG10DCTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byq28e200e345-datasheets-3437.pdf | TO-220-3 | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 10A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 55A | TO-220AB | 25 ns | Standard | 200V | 5A | 1 | 5A | 10μA @ 200V | 1.1V @ 5A | -40°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||
SBLF2040CT-E3/45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBR1550CTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbr1550cte345-datasheets-2302.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | MBR1550CT | 3 | Common Cathode | 2 | Rectifier Diodes | 15A | 150A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 50V | 150A | TO-220AB | Schottky | 50V | 7.5A | 1 | 1mA @ 50V | 750mV @ 7.5A | -65°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||
UB20DCT-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 19 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | 3 | Common Cathode | 40 | 2 | Rectifier Diodes | R-PSSO-G2 | 20A | 1V | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15μA | 200V | 100A | 80 ns | Standard | 200V | 10A | 1 | 15μA @ 200V | 1V @ 10A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||
UB16CCT-E3/4W |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBR40H45CT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbr40h60pte345-datasheets-0057.pdf | TO-220-3 | 3 | 19 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 40A | 760mV | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 350A | 100μA | 45V | 350A | TO-220AB | Schottky | 45V | 20A | 1 | 100μA @ 40V | 640mV @ 20A | -65°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||
UGB8HCTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-ugb8hcthe345-datasheets-3326.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | 3 | Common Cathode | 30 | 2 | Rectifier Diodes | R-PSSO-G2 | 8A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 65A | 50 ns | Standard | 500V | 4A | 1 | 8A | 30μA @ 500V | 1.75V @ 4A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||
UG8JCTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-ugb8hcthe345-datasheets-3326.pdf | TO-220-3 | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 8A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 65A | TO-220AB | 50 ns | Standard | 600V | 4A | 1 | 8A | 30μA @ 600V | 1.75V @ 4A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||
SBLF25L20CTHE3/45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SBLB25L30CTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-sblb25l30cthe3ai-datasheets-0029.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | SBLB25L30CT | 3 | Common Cathode | 40 | 2 | Rectifier Diodes | R-PSSO-G2 | 25A | 180A | 900μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 900μA | 30V | 180A | Schottky | 30V | 12.5A | 1 | 900μA @ 30V | 490mV @ 12.5A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||
SBLF25L25CT-E3/45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UB30CCT-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 19 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | 3 | Common Cathode | 40 | 2 | Rectifier Diodes | R-PSSO-G2 | 30A | 1.05V | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 150V | 160A | 45 ns | Standard | 150V | 15A | 1 | 20μA @ 150V | 1.05V @ 15A | -55°C~150°C | 1 Pair Common Cathode |
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