Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration |
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GI2403-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gi2401e345-datasheets-9132.pdf | TO-220-3 | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 16A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 125A | 150V | TO-220AB | 35 ns | 35 ns | Standard | 150V | 16A | 1 | 8A | 50μA @ 150V | 975mV @ 8A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||
VS-20CTQ040-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vs20ctq045m3-datasheets-5422.pdf | TO-220-3 | 12 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 2mA @ 40V | 760mV @ 20A | 20A | -55°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-20CTQ035-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vs20ctq045m3-datasheets-5422.pdf | TO-220-3 | 12 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 35V | 2mA @ 35V | 760mV @ 20A | 20A | -55°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UGB10DCTHE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byq28e200e345-datasheets-3437.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | UGB10DCT | 3 | Common Cathode | 30 | 2 | Rectifier Diodes | R-PSSO-G2 | 10A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 55A | 25 ns | Standard | 200V | 5A | 1 | 5A | 10μA @ 200V | 1.1V @ 5A | -40°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||
NRVBD650CTG-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | FREE WHEELING DIODE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 2 | R-PSSO-G2 | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 100μA | Schottky | 75A | 1 | 3A | 50V | 100μA @ 50V | 700mV @ 3A | 3A | -65°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||
MBR30H100CT C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-mbr30h100ctc0g-datasheets-9096.pdf | TO-220-3 | 3 | 10 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | NO | SINGLE | 175°C | 2 | Rectifier Diodes | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 10μA | TO-220AB | Schottky | 150A | 1 | 15A | 100V | 10μA @ 100V | 980mV @ 30A | 30A | -55°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||
VF30100C-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vi30100ce34w-datasheets-3371.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | unknown | NOT SPECIFIED | Common Cathode | NOT SPECIFIED | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 500μA | 100V | 160A | Schottky | 100V | 15A | 500μA @ 100V | 800mV @ 15A | -40°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||
MBR10H100CT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-mbr10h100cte345-datasheets-9100.pdf | TO-220-3 | 10.4394mm | 9.14mm | 4.826mm | 3 | 10 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | MBR10H100CT | 3 | Common Cathode | 2 | Rectifier Diodes | R-PSFM-T3 | 10A | 850mV | 150A | 3.5μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 3.5μA | 100V | 150A | Schottky | 100V | 5A | 1 | 5A | 3.5μA @ 100V | 760mV @ 5A | -65°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||
MBRF2090CT-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-mbrf2090ctm34w-datasheets-9105.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | 20A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 90V | 150A | TO-220AB | Schottky | 90V | 10A | 1 | 100μA @ 90V | 800mV @ 10A | -65°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||
UGF18ACTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-ugf18bcte345-datasheets-8801.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 29 Weeks | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | R-PSFM-T3 | 18A | 175A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 175A | 50V | TO-220AB | 30 ns | 30 ns | Standard | 50V | 18A | 1 | 9A | 10μA @ 50V | 1.1V @ 9A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||
VBT2045CBP-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vbt2045cbpe34w-datasheets-9112.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 22 Weeks | Unknown | 3 | Common Cathode | TO-263AB | 20A | 580mV | Fast Recovery =< 500ns, > 200mA (Io) | 160A | 2mA | 45V | 160A | Schottky | 45V | 10A | 45V | 2mA @ 45V | 580mV @ 10A | 10A | -40°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||
UG18BCT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-ugf18bcte345-datasheets-8801.pdf | TO-220-3 | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 18A | 175A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 175A | 100V | TO-220AB | 30 ns | 30 ns | Standard | 100V | 18A | 1 | 9A | 10μA @ 100V | 1.1V @ 9A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||
VS-25CTQ040-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vs25ctq045m3-datasheets-9033.pdf | TO-220-3 | 12 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 1.75mA @ 40V | 710mV @ 30A | 30A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBRF3045CTHC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/taiwansemiconductorcorporation-mbrf3060ctc0g-datasheets-8761.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 200μA @ 45V | 820mV @ 30A | 30A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SBR20A60CTBQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SBR® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2013 | /files/diodesincorporated-sbr20a60ctbq13-datasheets-9122.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | EAR99 | HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 790mV | FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 180A | Super Barrier | 60V | 20A | 1 | 10A | 500μA @ 60V | 790mV @ 20A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||
TSF20H120C C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/taiwansemiconductorcorporation-tsf20h100cc0g-datasheets-9012.pdf | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 120V | 250μA @ 120V | 870mV @ 10A | 10A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SBR10100CTFP | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SBR® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | /files/diodesincorporated-sbr10100ctfp-datasheets-9126.pdf | TO-220-3 Full Pack, Isolated Tab | 10.36mm | 15.2mm | 4.7mm | Lead Free | 3 | 14 Weeks | 2.299997g | 3 | no | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 260 | SBR10100CT | 3 | Common Cathode | 40 | 2 | Rectifier Diodes | 10A | 800mV | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 120A | 100μA | 100V | 120A | TO-220AB | Super Barrier | 100V | 5A | 1 | 100μA @ 100V | 800mV @ 5A | -65°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||
VS-25CTQ035-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vs25ctq045m3-datasheets-9033.pdf | TO-220-3 | 12 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 35V | 1.75mA @ 35V | 710mV @ 30A | 30A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-16CTQ060-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vs16ctq100m3-datasheets-5351.pdf | TO-220-3 | 12 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 550μA @ 60V | 880mV @ 16A | 8A | -55°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VBT2045C-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vbt2045ce34w-datasheets-9091.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 20A | 580mV | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2mA | 45V | 160A | Schottky | 45V | 10A | 1 | 2mA @ 45V | 580mV @ 10A | -40°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||
GI2401-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gi2401e345-datasheets-9132.pdf | TO-220-3 | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 16A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 125A | 50V | TO-220AB | 35 ns | 35 ns | Standard | 50V | 16A | 1 | 8A | 50μA @ 50V | 975mV @ 8A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||
VS-MBR3045CT-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vsmbr3045ctm3-datasheets-9093.pdf | TO-220-3 | 12 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 1mA @ 45V | 760mV @ 30A | 15A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBRF3080CT C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/taiwansemiconductorcorporation-mbrf3060ctc0g-datasheets-8761.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 10 Weeks | EAR99 | LOW POWER LOSS, UL RECOGNIZED | 8541.10.00.80 | NO | SINGLE | 150°C | 2 | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80V | 200μA | TO-220AB | Schottky | 200A | 1 | 15A | 80V | 200μA @ 80V | 940mV @ 30A | 30A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||
MBRB1560CT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-mbrb1545cthe3ap-datasheets-8642.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1560CT | 3 | Common Cathode | 2 | Rectifier Diodes | R-PSSO-G2 | 15A | 750mV | 150A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 60V | 150A | Schottky | 60V | 7.5A | 1 | 1mA @ 60V | 750mV @ 7.5A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||
NRVBD640CTG-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/onsemiconductor-mbrd660ctt4g-datasheets-0084.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | yes | FREE WHEELING DIODE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | MBRD640CT | 175°C | NOT SPECIFIED | 2 | R-PSSO-G2 | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40V | 100μA | Schottky | 75A | 1 | 3A | 40V | 100μA @ 40V | 700mV @ 3A | 3A | -65°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||
VF20200G-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vf20200ge34w-datasheets-9059.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 20A | 1.7V | 110A | 150μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | 200V | 110A | TO-220AB | Schottky | 200V | 10A | 1 | 150μA @ 200V | 1.7V @ 10A | -40°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||
MBRB2060CTHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-mbrb2045cte345-datasheets-3387.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 245 | 150°C | 30 | 2 | R-PSSO-G2 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | 150μA | Schottky | 150A | 1 | 10A | 60V | 150μA @ 60V | 800mV @ 10A | 10A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||
MBR3045CT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | /files/diodesincorporated-mbr3045ct-datasheets-9066.pdf | TO-220-3 | 16 Weeks | 3 | Common Cathode | TO-220AB | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 45V | 200A | Schottky | 45V | 15A | 45V | 100μA @ 45V | 620mV @ 15A | 15A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||
V20150C-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vb20150ce34w-datasheets-9419.pdf | TO-220-3 | 10.54mm | 15.32mm | 4.7mm | 3 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT APPLICABLE | 3 | Common Cathode | NOT APPLICABLE | 2 | Rectifier Diodes | Not Qualified | 20A | 1.2V | 120A | 150μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | 150V | 120A | TO-220AB | Schottky | 150V | 10A | 1 | 150μA @ 150V | 1.2V @ 10A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||
VS-MBRB2035CT-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vsmbrb2045ctm3-datasheets-8783.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 150°C | Common Cathode | 40 | 2 | R-PSSO-G2 | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | Schottky | 35V | 10A | 150A | 1 | 100μA @ 35V | 570mV @ 10A | -65°C~150°C | 1 Pair Common Cathode |
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