| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VT3080C-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vit3080cm34w-datasheets-8964.pdf | TO-220-3 | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Not Qualified | 30A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 700μA | 80V | 150A | TO-220AB | Schottky | 80V | 15A | 1 | 700μA @ 80V | 820mV @ 15A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||
| MBRF30100CT C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/taiwansemiconductorcorporation-mbrf3060ctc0g-datasheets-8761.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 10 Weeks | EAR99 | LOW POWER LOSS, UL RECOGNIZED | 8541.10.00.80 | NO | SINGLE | 150°C | 2 | Rectifier Diodes | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 200μA | TO-220AB | Schottky | 200A | 1 | 15A | 100V | 200μA @ 100V | 940mV @ 30A | 30A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||
| VT3060C-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vit3060cm34w-datasheets-8947.pdf | TO-220-3 | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Not Qualified | R-PSFM-T3 | 30A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.2mA | 60V | 170A | TO-220AB | Schottky | 60V | 15A | 1 | 1.2mA @ 60V | 700mV @ 15A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||
| UGB10BCTHE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byq28e200e345-datasheets-3437.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | UGB10BCT | 3 | Common Cathode | 30 | 2 | Rectifier Diodes | R-PSSO-G2 | 10A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 55A | 25 ns | Standard | 100V | 5A | 1 | 5A | 10μA @ 100V | 1.1V @ 5A | -40°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||
| SBLB1640CTHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-sblb1640cthe3ap-datasheets-9042.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 29 Weeks | TO-263AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 550mV @ 8A | 8A | -40°C~125°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRF20H200CT C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/taiwansemiconductorcorporation-mbrf20h150ctc0g-datasheets-8781.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 10 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | NO | SINGLE | 175°C | 2 | Rectifier Diodes | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 5μA | Schottky | 150A | 1 | 10A | 200V | 5μA @ 200V | 970mV @ 20A | 20A | -55°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||
| V30D100CHM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v30d100cm3i-datasheets-8553.pdf | TO-263-3, D2Pak (2 Leads + Tab) Variant | 10 Weeks | TO-263AC (SMPD) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 500μA @ 100V | 820mV @ 10A | 15A | -40°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-MBR2535CT-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vsmbr2545ctm3-datasheets-6084.pdf | TO-220-3 | 12 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 35V | 200μA @ 35V | 820mV @ 30A | 15A | -65°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-32CTQ025-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vs32ctq025m3-datasheets-9045.pdf | TO-220-3 | 12 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 25V | 1.75mA @ 25V | 580mV @ 30A | 30A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UGF18CCTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-ugf18bcte345-datasheets-8801.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 18A | 175A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 175A | 150V | TO-220AB | 30 ns | 30 ns | Standard | 150V | 18A | 1 | 9A | 10μA @ 150V | 1.1V @ 9A | -65°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||
| MBRB1560CT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-mbrb1545cthe3ap-datasheets-8642.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1560CT | 3 | Common Cathode | 2 | Rectifier Diodes | R-PSSO-G2 | 15A | 750mV | 150A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 60V | 150A | Schottky | 60V | 7.5A | 1 | 1mA @ 60V | 750mV @ 7.5A | -65°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||
| TSF20H100C C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/taiwansemiconductorcorporation-tsf20h100cc0g-datasheets-9012.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 14 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | NO | SINGLE | 150°C | 2 | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 200μA | TO-220AB | Schottky | 120A | 1 | 10A | 100V | 200μA @ 100V | 810mV @ 10A | 10A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||
| UGF18DCTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-ugf18bcte345-datasheets-8801.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 18A | 175A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 175A | 200V | TO-220AB | 30 ns | 30 ns | Standard | 200V | 18A | 1 | 9A | 10μA @ 200V | 1.1V @ 9A | -65°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||
| VBT1045C-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vbt1045cm38w-datasheets-8511.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 150°C | Common Cathode | NOT SPECIFIED | 2 | R-PSSO-G2 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 45V | 5A | 100A | 1 | 5A | 500μA @ 45V | 580mV @ 5A | -40°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||
| MBR2535CT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbr2545cte345-datasheets-1229.pdf | TO-220-3 | Lead Free | 3 | 10 Weeks | 3 | yes | EAR99 | FREEWHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | MBR2535CT | 3 | Common Cathode | 2 | Rectifier Diodes | 25A | 820mV | 150A | 200μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 35V | 150A | TO-220AB | Schottky | 35V | 15A | 1 | 200μA @ 35V | 820mV @ 30A | -65°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||
| VI20100C-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vi20100cm34w-datasheets-9025.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | 20A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800μA | 100V | 150A | Schottky | 100V | 10A | 1 | 800μA @ 100V | 790mV @ 10A | -40°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||
| V20120C-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-v20120ce34w-datasheets-9027.pdf | TO-220-3 | 3 | 27 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT APPLICABLE | 3 | Common Cathode | NOT APPLICABLE | 2 | Rectifier Diodes | Not Qualified | R-PSFM-T3 | 20A | 900mV | 110A | 150μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 175A | 700μA | 120V | 120A | 20 ns | Schottky | 120V | 10A | 1 | 700μA @ 120V | 900mV @ 10A | -40°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||
| VS-25CTQ045-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vs25ctq045m3-datasheets-9033.pdf | TO-220-3 | 12 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 1.75mA @ 45V | 710mV @ 30A | 30A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VBT2080C-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vbt2080cm38w-datasheets-8897.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 150°C | Common Cathode | NOT SPECIFIED | 2 | R-PSSO-G2 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600μA | Schottky | 80V | 10A | 100A | 1 | 600μA @ 80V | 810mV @ 10A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||
| TSF20U45C C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/taiwansemiconductorcorporation-tsf20u60cc0g-datasheets-0299.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 14 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45V | 500μA | TO-220AB | Schottky | 180A | 1 | 10A | 45V | 300μA @ 45V | 530mV @ 10A | 10A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||
| SBR1060CTFP | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SBR® | Through Hole | Through Hole | Tube | 1 (Unlimited) | Radial | 150°C | -65°C | ROHS3 Compliant | 2012 | /files/diodesincorporated-sbr1060ctfp-datasheets-8990.pdf | TO-220-3 Full Pack, Isolated Tab | 10.36mm | 15.2mm | 4.7mm | Lead Free | 3 | 14 Weeks | 2.299997g | 3 | no | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 260 | 3 | Common Cathode | 40 | 2 | Rectifier Diodes | 10A | 680mV | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 120A | 500μA | 60V | 120A | TO-220AB | Super Barrier | 60V | 5A | 1 | 5A | 500μA @ 60V | 680mV @ 5A | -65°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||
| VF30150C-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vf30150cm34w-datasheets-8994.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | 30A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 150V | 140A | TO-220AB | Schottky | 150V | 15A | 1 | 200μA @ 150V | 1.36V @ 15A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||
| VS-MBR2080CT-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vsmbr20100ctm3-datasheets-8639.pdf | TO-220-3 | 12 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 80V | 100μA @ 80V | 950mV @ 20A | 10A | -65°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR30H100CTF-G1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr30h100ctfg1-datasheets-9002.pdf | TO-220-3 Full Pack | 5 Weeks | TO-220F-3 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 4.5μA @ 100V | 800mV @ 15A | 15A | -65°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR30100CT C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-mbr3045ctc0g-datasheets-8765.pdf | TO-220-3 | 3 | 10 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | NO | SINGLE | 150°C | 2 | Rectifier Diodes | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 200μA | TO-220AB | Schottky | 200A | 1 | 15A | 100V | 200μA @ 100V | 940mV @ 30A | 30A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||
| BYQ28EB-100HE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byq28e200e345-datasheets-3437.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | SINGLE | GULL WING | 245 | 3 | Common Cathode | 30 | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 10A | 55A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 55A | 100V | 25 ns | 25 ns | Standard | 100V | 5A | 1 | 5A | 10μA @ 100V | 1.1V @ 5A | -40°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||
| VFT3080C-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vbt3080ce38w-datasheets-7478.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSFM-T3 | 30A | 150A | 30μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 700μA | 80V | 150A | TO-220AB | Schottky | 80V | 15A | 1 | 700μA @ 80V | 820mV @ 15A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||
| VS-MURB2020CTL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vsmurb2020ctrm3-datasheets-8355.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 200V | 15μA @ 200V | 1.15V @ 16A | 10A | -65°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDBD2040-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/comchiptechnology-cdbd2045hf-datasheets-8816.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | SINGLE | GULL WING | 245 | 125°C | Common Cathode | 30 | 2 | Rectifier Diodes | R-PSSO-G2 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 40V | 20A | 150A | 1 | 10A | 500μA @ 40V | 550mV @ 10A | 20A DC | -55°C~125°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||
| MBR30100CT-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 | ROHS3 Compliant | 2009 | /files/microcommercialco-mbr30100ctbp-datasheets-8970.pdf | TO-220-3 | 3 | 12 Weeks | yes | EAR99 | LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | TO-220AB | Schottky | 250A | 1 | 30A | 100V | 500μA @ 100V | 850mV @ 15A | 30A | -55°C~150°C | 1 Pair Common Cathode |
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