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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Output | Highest Frequency Band | Current Rating (Amps) | JEDEC-95 Code | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Transistor Type | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BLF6G10L-260PBM,11 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | Non-RoHS Compliant | 2011 | SOT-1110A | 13 Weeks | BLF6G10 | LDMOST | 40W | 64A | 1.8A | LDMOS (Dual) | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF512,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 20V | 100MHz | DEPLETION MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-bf512235-datasheets-7325.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | EAR99 | LOW NOISE | 8541.21.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | BF512 | 3 | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | 1.5dB | SILICON | SINGLE | AMPLIFIER | 0.25W | 20V | JUNCTION | 30mA | 5mA | 0.03A | 0.4 pF | N-Channel JFET | 10V | |||||||||||||||||||||||||||
| CLF1G0035-100PU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 150V | 3GHz | DEPLETION MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-clf1g0035100pu-datasheets-1101.pdf | SOT-1228A | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | CLF1G0035 | 2 | 14dB | R-CDFM-F4 | GALLIUM NITRIDE | COMMON SOURCE, 2 ELEMENTS | SOURCE | AMPLIFIER | N-CHANNEL | 150V | HIGH ELECTRON MOBILITY | 100W | 100mA | HEMT | 50V | ||||||||||||||||||||||||||||||||||||
| CLF1G0035S-100PU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 150V | 3GHz | DEPLETION MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-clf1g0035100pu-datasheets-1101.pdf | SOT-1228B | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | CLF1G0035 | 2 | 14dB | R-CDFP-F4 | GALLIUM NITRIDE | COMMON SOURCE, 2 ELEMENTS | SOURCE | AMPLIFIER | N-CHANNEL | 150V | HIGH ELECTRON MOBILITY | 100W | 100mA | HEMT | 50V | ||||||||||||||||||||||||||||||||||||
| BLM8AD22S-60ABGY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.1GHz~2.2GHz | /files/ampleonusainc-blm8ad22s60abgy-datasheets-1109.pdf | OMP-780-16G-1 | 13 Weeks | 28.2dB | 45W | 1.4μA | 105mA | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF904A,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 200MHz | ROHS3 Compliant | 1999 | /files/nxpusainc-bf904ar215-datasheets-1134.pdf | TO-253-4, TO-253AA | unknown | BF904 | 4 | 2013-06-14 00:00:00 | 1dB | 30mA | 10mA | N-Channel Dual Gate | 4V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| CGHV35150F | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tube | 1 (Unlimited) | 125V | 2.9GHz~3.5GHz | RoHS Compliant | 12A | 440193 | 8 Weeks | 13.3dB | 170W | 500mA | HEMT | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NE3512S02-T1C-A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 4V | 12GHz | ROHS3 Compliant | /files/rochesterelectronicsllc-ne3512s02t1da-datasheets-0720.pdf | 4-SMD, Flat Leads | 13.5dB | S02 | 0.35dB | 70mA | 10mA | HFET | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G20LS-230VJ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 1.81GHz~1.88GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blf8g20ls230vu-datasheets-8235.pdf | SOT-1239B | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | QUAD | UNSPECIFIED | NOT SPECIFIED | BLF8G20 | NOT SPECIFIED | 1 | 18dB | R-CQFP-X6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 55W | 1.8A | LDMOS | 28V | ||||||||||||||||||||||||||||||||||
| LET9060S | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 80V | 960MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-let9060s-datasheets-7288.pdf | 12A | PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) | Lead Free | 2 | 52 Weeks | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | DUAL | FLAT | 250 | LET9060 | 10 | 30 | 1 | FET General Purpose Power | 17.2dB | R-PDSO-F2 | 7A | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 60W | 300mA | 7A | LDMOS | 28V | |||||||||||||||||||||||||
| BLC9H10XS-60PZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 105V | 400MHz~1GHz | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ampleonusainc-blc9h10xs60py-datasheets-9131.pdf | SOT1273-1 | 13 Weeks | 16.3dB | 102W | 1.4μA | 115mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXZR18N50B-00 | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-MOS™ | Tube | 1 (Unlimited) | 500V | 65MHz | ROHS3 Compliant | /files/ixysrf-ixzr18n50a00-datasheets-9109.pdf | TO-247-3 | 10 Weeks | 23dB | PLUS247™-3 | 350W | 19A | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| UF2820P | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tray | 1 (Unlimited) | 200°C | -55°C | 65V | 100MHz~500MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/macomtechnologysolutions-uf2820p-datasheets-1126.pdf | 2.8A | 4 | 20 Weeks | 5 | EAR99 | No | DUAL | FLAT | 2 | FET General Purpose Power | 10dB | R-CDFM-F4 | 2.8A | 20V | SOURCE | AMPLIFIER | METAL-OXIDE SEMICONDUCTOR | 20W | 200mA | N-Channel | 28V | ||||||||||||||||||||||||||||||||||||
| BLC9G24XS-170AVZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 2.3GHz~2.4GHz | ROHS3 Compliant | 2010 | /files/ampleonusainc-blc9g24xs170avy-datasheets-9470.pdf | SOT1275-3 | 13 Weeks | 15.5dB | 170W | 250mA | LDMOS (Dual), Common Source | 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF9G38LS-90PU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 3.4GHz~3.6GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blf9g38ls90pj-datasheets-8318.pdf | SOT-1121B | 13 Weeks | 15dB | LDMOST | 20W | 600mA | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF904AR,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 200MHz | ROHS3 Compliant | 1999 | /files/nxpusainc-bf904ar215-datasheets-1134.pdf | SOT-143R | unknown | BF904 | 4 | 2013-06-14 00:00:00 | 1dB | 30mA | 10mA | N-Channel Dual Gate | 4V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF160 | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tray | 1 (Unlimited) | 200°C | -65°C | 30MHz~500MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/macomtechnologysolutions-mrf160-datasheets-1145.pdf | 1A | 249-06 | Lead Free | 4 | 20 Weeks | 4 | yes | EAR99 | No | 24W | RADIAL | FLAT | 4 | Single | 1 | FET General Purpose Power | 18dB | 1A | 20V | AMPLIFIER | 65V | METAL-OXIDE SEMICONDUCTOR | 4W | 50mA | 1A | N-Channel | 28V | |||||||||||||||||||||||||||||||
| BLF8G09LS-400PGWQ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 718.5MHz~725.5MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf8g09ls400pgwj-datasheets-0031.pdf | SOT-1242C | 8 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | GULL WING | NOT SPECIFIED | BLF8G09 | NOT SPECIFIED | 2 | 20.6dB | R-CDSO-G8 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 95W | 3.4A | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||
| BF908R,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 12V | 200MHz | ROHS3 Compliant | 1996 | /files/nxpusainc-bf908215-datasheets-6341.pdf | SOT-143R | BF908 | 4 | 2013-06-14 00:00:00 | 0.6dB | 40mA | 15mA | N-Channel Dual Gate | 8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF545B,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 30V | DEPLETION MODE | ROHS3 Compliant | 2001 | /files/nxpusainc-bf545a215-datasheets-6901.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | 8541.21.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | BF545 | 3 | 150°C | NOT SPECIFIED | 1 | Other Transistors | R-PDSO-G3 | SILICON | SINGLE | AMPLIFIER | 0.25W | 30V | JUNCTION | VERY HIGH FREQUENCY B | 15mA | TO-236AB | N-Channel JFET | ||||||||||||||||||||||||||||||||||
| BF1203,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 10V | 400MHz | ROHS3 Compliant | 2000 | /files/nxpusainc-bf1203115-datasheets-1188.pdf | 6-TSSOP, SC-88, SOT-363 | BF1203 | 6 | 27dB | 2013-06-14 00:00:00 | 1dB | 30mA | 15mA | N-Channel Dual Gate | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NPT35015D | M/A-Com Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 3 (168 Hours) | 100V | 3.3GHz~3.8GHz | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/macomtechnologysolutions-npt35015d-datasheets-1039.pdf | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 2 Weeks | NOT SPECIFIED | NOT SPECIFIED | 10.5dB | 1.7W | 5A | 200mA | HEMT | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC8G09XS-400AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 791MHz~960MHz | 2011 | /files/ampleonusainc-blc8g09xs400avtz-datasheets-1099.pdf | SOT-1258-7 | 13 Weeks | 17dB | 540W | 2.8μA | 880mA | LDMOS | 32V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS6G3135-20,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 60V | 3.1GHz~3.5GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ampleonusainc-bls6g313520112-datasheets-1042.pdf | SOT-608A | 2 | 13 Weeks | EAR99 | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLS6G3135 | 225°C | NOT SPECIFIED | 1 | 15.5dB | S-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 20W | 2.1A | 50mA | 2.1A | LDMOS | 32V | ||||||||||||||||||||||||||||||||
| BLC9G15LS-400AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 1452MHz~1511MHz | ROHS3 Compliant | 2010 | /files/ampleonusainc-blc9g15ls400avtz-datasheets-1047.pdf | SOT-1258-3 | 13 Weeks | 16.5dB | 540W | 810mA | LDMOS (Dual), Common Source | 32V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS6G3135S-20,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 60V | 3.1GHz~3.5GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ampleonusainc-bls6g313520112-datasheets-1042.pdf | SOT-608B | 2 | 13 Weeks | EAR99 | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLS6G3135 | NOT SPECIFIED | 1 | 15.5dB | S-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 20W | 2.1A | 50mA | 2.1A | LDMOS | 32V | |||||||||||||||||||||||||||||||||
| BLA6G1011LS-200RG, | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 1.03GHz~1.09GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-bla6g1011200r112-datasheets-0884.pdf | SOT-502C | 13 Weeks | EAR99 | unknown | NOT SPECIFIED | BLA6G1011 | NOT SPECIFIED | 20dB | 200W | 49A | 100mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BLL8H0514L-130U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 100V | 1.2GHz~1.4GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-bll8h0514ls130u-datasheets-0494.pdf | SOT-1135A | 13 Weeks | 17dB | CDFM2 | 130W | 50mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXZR16N60 | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-MOS™ | Tube | 1 (Unlimited) | 600V | 65MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixysrf-ixzr16n60-datasheets-1063.pdf | TO-247-3 | 3 | 10 Weeks | yes | e1 | TIN SILVER COPPER | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | 23dB | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 350W | 600V | METAL-OXIDE SEMICONDUCTOR | 350W | 18A | 18A | N-Channel | 100V | |||||||||||||||||||||||||||||
| BLF882U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 104V | 705MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blf882u-datasheets-1065.pdf | SOT-502A | 2 | 13 Weeks | EAR99 | unknown | e4 | GOLD | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | 20.6dB | R-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 104V | METAL-OXIDE SEMICONDUCTOR | 200W | 100mA | LDMOS | 50V |
