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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Noise Figure | Output Power | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Output | Current Rating (Amps) | Min Breakdown Voltage | Current - Test | Drain Current-Max (Abs) (ID) | Drain to Source Breakdown Voltage | Transistor Type | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NE3513M04-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | 4V | 12GHz | RoHS Compliant | 60mA | SOT-343F | 4 | No | 13dB | 0.65dB | 60mA | -3V | 125mW | 10mA | N-Channel GaAs HJ-FET | 2V | ||||||||||||||||||||||||||||||||||||||||||||
| BLF25M612G,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.45GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf25m612g112-datasheets-1730.pdf | SOT-975C | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | BLF25M612 | NOT SPECIFIED | 1 | 19dB | S-CDSO-G2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 12W | 10mA | LDMOS | 28V | ||||||||||||||||||||||||||||||
| BLF25M612,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.45GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf25m612g112-datasheets-1730.pdf | SOT-975B | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF25M612 | NOT SPECIFIED | 1 | 19dB | S-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 12W | 10mA | LDMOS | 28V | ||||||||||||||||||||||||||||||
| NE5550279A-T1-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 30V | 900MHz | RoHS Compliant | 600mA | 4-SMD, Flat Leads | 4 | No | NE5550 | 22.5dB | 79A | 600mA | 6V | 33dBm | 600mA | 40mA | LDMOS | 7.5V | ||||||||||||||||||||||||||||||||||||||||||
| NE3515S02-T1C-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -65°C | 4V | 12GHz | RoHS Compliant | 88mA | 4-SMD, Flat Leads | Lead Free | 4 | No | 165mW | NE3515 | 12.5dB | S02 | 0.3dB | 88mA | -3V | 4V | 14dBm | 88mA | 3V | 10mA | HFET | 2V | |||||||||||||||||||||||||||||||||||||
| BLF25M612G,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.45GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf25m612g112-datasheets-1730.pdf | SOT-975C | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | BLF25M612 | NOT SPECIFIED | 1 | 19dB | S-CDSO-G2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 12W | 10mA | LDMOS | 28V | ||||||||||||||||||||||||||||||
| NE3509M04-T2-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | 2GHz | RoHS Compliant | /files/cel-ne3509m04t2a-datasheets-7332.pdf | SOT-343F | Lead Free | 4 | No | NE3509 | 125mW | 17.5dB | 0.4dB | 60mA | 3V | 11dBm | 4V | 10mA | 2V | HFET | 2V | ||||||||||||||||||||||||||||||||||||||||
| NE3512S02-T1C-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -65°C | 12GHz | DEPLETION MODE | RoHS Compliant | 70mA | 4-SMD, Flat Leads | Lead Free | 4 | 4 | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | 165mW | QUAD | 260 | NE3512 | 4 | 10 | 1 | 13.5dB | 0.35dB | 165mW | 70mA | -3V | SINGLE | AMPLIFIER | N-CHANNEL | 4V | HETERO-JUNCTION | 3V | 10mA | 0.015A | HFET | 2V | |||||||||||||||||||||||||
| BLF2425M6L180P,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.45GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf2425m6ls180p11-datasheets-1660.pdf | SOT539A | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF2425 | NOT SPECIFIED | 2 | 13.3dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 180W | 10mA | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||
| BLF2425M6LS180P,11 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.45GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf2425m6ls180p11-datasheets-1660.pdf | SOT539B | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF2425 | NOT SPECIFIED | 2 | 13.3dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 180W | 10mA | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||
| BLF2425M7LS140,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.45GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf2425m7l140118-datasheets-1643.pdf | SOT-502B | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF2425 | NOT SPECIFIED | 1 | 18.5dB | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 140W | 1.3A | LDMOS | 28V | ||||||||||||||||||||||||||||||
| BLF7G24LS-160P,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf7g24ls160p118-datasheets-1759.pdf | SOT539B | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF7G24 | NOT SPECIFIED | 2 | 18.5dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 30W | 1.2A | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||
| BLF7G24LS-160P,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf7g24ls160p118-datasheets-1759.pdf | SOT539B | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF7G24 | NOT SPECIFIED | 2 | 18.5dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 30W | 1.2A | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||
| BLF6H10L-160,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 104V | 952.5MHz~957.5MHz | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf6h10l160112-datasheets-1763.pdf | SOT467C | 20dB | SOT467C | 38W | 600mA | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G24L-200P,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf8g24l200p118-datasheets-1765.pdf | SOT539A | 4 | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF8G24 | NOT SPECIFIED | 2 | 17.2dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 60W | 1.74A | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||
| NE3510M04-T2-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | 4V | 4GHz | RoHS Compliant | SOT-343F | Lead Free | 4 | No | NE3510 | 16dB | 0.45dB | 125mW | 97mA | -3V | 15mA | HFET | 2V | |||||||||||||||||||||||||||||||||||||||||||
| BLF8G24LS-200P,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf8g24l200p118-datasheets-1765.pdf | SOT539B | 4 | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF8G24 | NOT SPECIFIED | 2 | 17.2dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 60W | 1.74A | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||
| MRF8S18120HSR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 1.81GHz | ROHS3 Compliant | 2006 | /files/nxpusainc-mrf8s18120hsr3-datasheets-1672.pdf | NI-780S | 10 Weeks | EAR99 | 8541.29.00.75 | MRF8S18120 | 18.2dB | 72W | 800mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||
| BLF6H10LS-160,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 104V | 952.5MHz~957.5MHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf6h10l160112-datasheets-1763.pdf | SOT467B | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | 20dB | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 104V | METAL-OXIDE SEMICONDUCTOR | 38W | 600mA | LDMOS | 50V | |||||||||||||||||||||||||||||||
| MW7IC2425NBR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.45GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/nxpusainc-mw7ic2425gnr1-datasheets-5428.pdf | TO-272-16 Variant, Flat Leads | 16 | 10 Weeks | EAR99 | ESD PROTECTION | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | 260 | MW7IC2425 | 225°C | 40 | 1 | 27.7dB | Not Qualified | R-PDFM-F16 | SILICON | SINGLE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 25W | 55mA | LDMOS | 28V | ||||||||||||||||||||||||||||
| NE3516S02-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | 4V | 12GHz | RoHS Compliant | 60mA | 4-SMD, Flat Leads | 4 | No | 14dB | 0.35dB | 60mA | -3V | 165mW | 10mA | N-Channel GaAs HJ-FET | 2V | ||||||||||||||||||||||||||||||||||||||||||||
| BLF2425M7L140,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.45GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf2425m7l140118-datasheets-1643.pdf | SOT-502A | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF2425 | NOT SPECIFIED | 1 | 18.5dB | R-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 140W | 1.3A | LDMOS | 28V | ||||||||||||||||||||||||||||||
| NE5550234-AZ | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | 30V | 900MHz | RoHS Compliant | 600mA | TO-243AA | Lead Free | 3 | No | NE5550 | 23.5dB | 600mA | 6V | 32.2dB | 40mA | N-Channel | 7.5V | |||||||||||||||||||||||||||||||||||||||||||
| BLF2425M7LS140,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.45GHz | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blf2425m7l140118-datasheets-1643.pdf | SOT-502B | 13 Weeks | BLF2425 | 18.5dB | SOT502B | 140W | 1.3A | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||
| MRF6V2300NR1 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 110V | 220MHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/nxpusainc-mrf6v2300nbr1-datasheets-1558.pdf | TO-270AB | 4 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | MRF6V2300 | 225°C | 40 | 1 | FET General Purpose Power | 25.5dB | Not Qualified | R-PDFM-F4 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 110V | METAL-OXIDE SEMICONDUCTOR | 300W | 900mA | LDMOS | 50V | ||||||||||||||||||||||||||
| MRF8S21100HSR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 65V | 2.17GHz | ROHS3 Compliant | 2006 | NI-780S | 10 Weeks | EAR99 | MRF8S21100 | 18.3dB | 24W | 700mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||
| MRF6V3090NBR5 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 110V | 860MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/nxpusainc-mrf6v3090nr5-datasheets-7354.pdf | TO-272BB | 4 | EAR99 | ESD PROTECTION | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | MRF6V3090 | 225°C | 40 | 1 | FET General Purpose Power | 22dB | Not Qualified | R-PDFM-F4 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 115V | METAL-OXIDE SEMICONDUCTOR | 18W | 350mA | LDMOS | 50V | ||||||||||||||||||||||||||
| MRF6V2300NBR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 110V | 220MHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/nxpusainc-mrf6v2300nbr1-datasheets-1558.pdf | TO-272BB | 4 | 10 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | MRF6V2300 | 225°C | 40 | 1 | FET General Purpose Power | 25.5dB | Not Qualified | R-PDFM-F4 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 110V | METAL-OXIDE SEMICONDUCTOR | 300W | 900mA | LDMOS | 50V | |||||||||||||||||||||||||
| MRF6VP2600HR6 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 110V | 225MHz | ROHS3 Compliant | 2010 | /files/nxpusainc-mrf6vp2600hr6-datasheets-1575.pdf | NI-1230 | EAR99 | 8541.29.00.75 | MRF6VP2600 | 25dB | 125W | 2.6A | LDMOS (Dual) | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||
| MRF7S21170HR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.17GHz | ROHS3 Compliant | 2010 | /files/nxpusainc-mrf7s21170hr3-datasheets-1600.pdf | NI-880 | 12 Weeks | MRF7S21170 | 16dB | 50W | 1.4A | LDMOS | 28V |
