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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Construction | RF/Microwave Device Type | Input Power-Max (CW) | Characteristic Impedance | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Power Gain | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Highest Frequency Band | Current Rating (Amps) | JEDEC-95 Code | Min Breakdown Voltage | Transition Frequency | Current - Test | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Transistor Type | Voltage - Test |
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| PD85006TR-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 3 (168 Hours) | 150°C | -65°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd85006tre-datasheets-9046.pdf | 2A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 3 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - annealed | 36.5W | DUAL | GULL WING | 250 | PD85006 | 10 | Single | NOT SPECIFIED | 36.5W | 1 | FET General Purpose Power | 17dB | R-PDSO-G2 | 2A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 5W | 200mA | 2A | 40V | LDMOS | 13.6V | ||||||||||||||||||||||||||||||||||||||||||||
| PD85006-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd85006tre-datasheets-9046.pdf | 2A | PowerSO-10 Exposed Bottom Pad | 2 | 11 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - annealed | 36.5W | DUAL | GULL WING | 250 | PD85006 | 10 | Single | NOT SPECIFIED | 36.5W | 1 | FET General Purpose Power | 17dB | Not Qualified | R-PDSO-G2 | 2A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 6W | 200mA | 2A | 40V | LDMOS | 13.6V | |||||||||||||||||||||||||||||||||||||||||
| 2SK209-BL(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 125°C | -55°C | 1kHz | DEPLETION MODE | RoHS Compliant | 2009 | TO-236-3, SC-59, SOT-23-3 | 3 | 52 Weeks | 7.994566mg | 3 | Copper, Silver, Tin | No | 150mW | DUAL | GULL WING | Single | 1 | 1dB | 14mA | AMPLIFIER | JUNCTION | 500μA | N-Channel JFET | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLP10H603Z | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 104V | 860MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 12-VDFN Exposed Pad | 12 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 22.8dB | R-PDSO-N12 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 104V | METAL-OXIDE SEMICONDUCTOR | 2.5W | MO-229 | 15mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD85015TR-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 165°C | -65°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd85015stre-datasheets-6993.pdf | 5A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 25 Weeks | 3 | EAR99 | HIGH RELIABILITY | 59W | DUAL | GULL WING | NOT SPECIFIED | PD85015 | 10 | Single | NOT SPECIFIED | 59W | 1 | FET General Purpose Power | 16dB | Not Qualified | R-PDSO-G2 | 5A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 20W | 15W | 150mA | 5A | 40V | LDMOS | 13.6V | ||||||||||||||||||||||||||||||||||||||||||||
| PD85035TR-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 150°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stevaltdr031v1-datasheets-4788.pdf | 8A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 25 Weeks | 3 | yes | EAR99 | YES | 95W | DUAL | GULL WING | NOT SPECIFIED | PD85035 | 10 | Single | NOT SPECIFIED | 95W | 1 | FET General Purpose Power | 17dB | Not Qualified | R-PDSO-G2 | 8A | 15V | SILICON | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 15W | 350mA | 8A | 40V | LDMOS | 13.6V | |||||||||||||||||||||||||||||||||||||||||||||
| BLM8D1822-25BZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 28V | 1.8GHz~2.2GHz | 20-QFN Exposed Pad | 13 Weeks | 25W | LDMOS | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD55003S-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd55003se-datasheets-9103.pdf | 40V | 2.5A | PowerSO-10 Exposed Bottom Pad | Lead Free | 2 | 25 Weeks | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | 31.7W | DUAL | FLAT | PD55003 | 10 | Single | 31.7W | 1 | FET General Purpose Power | 17dB | R-PDSO-F2 | 2.5A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 3W | 50mA | 40V | LDMOS | 12.5V | ||||||||||||||||||||||||||||||||||||||||||||
| ARF463BP1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | 500V | 81.36MHz | ENHANCEMENT MODE | RoHS Compliant | 1998 | /files/microsemicorporation-arf463ap1g-datasheets-8788.pdf | 9A | TO-247-3 | Lead Free | 3 | 25 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | No | e1 | TIN SILVER COPPER | 180W | SINGLE | 3 | 180W | 1 | FET General Purpose Power | R-PSFM-T3 | 9A | 15dB | SINGLE | SOURCE | AMPLIFIER | 500V | METAL-OXIDE SEMICONDUCTOR | 100W | TO-247AD | 9A | N-Channel | 125V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXZR18N50A-00 | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-MOS™ | Tube | 1 (Unlimited) | 500V | 65MHz | ROHS3 Compliant | /files/ixysrf-ixzr18n50a00-datasheets-9109.pdf | TO-247-3 | 10 Weeks | 23dB | 350W | 19A | N-Channel | 100V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD85035A-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 3 (168 Hours) | 40V | 870MHz | ROHS3 Compliant | 8A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 52 Weeks | PD85035 | 15dB ~ 17dB | 35W | 350mA | LDMOS | 13.6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD55035S-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | 40V | 7A | PowerSO-10 Exposed Bottom Pad | Lead Free | 2 | 52 Weeks | 3 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | 95W | DUAL | FLAT | 225 | PD55035 | 10 | Single | 95W | 1 | FET General Purpose Power | R-PDSO-F2 | 7A | 20V | 16.9dB | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 35W | 200mA | 7A | 40V | LDMOS | 12.5V | ||||||||||||||||||||||||||||||||||||||||||
| ATF-501P8-BLK | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2014 | 4.5V | 1A | 8-WFDFN Exposed Pad | Lead Free | 8 | 6 Weeks | Unknown | 8 | EAR99 | Tin | No | 280mA | e3 | 3.5W | DUAL | 260 | 3.5W | 1 | FET RF Small Signal | 15dB | 1dB | 1A | 800mV | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 4.5V | 7V | HIGH ELECTRON MOBILITY | 29dBm | MO-229 | 1A | E-pHEMT | |||||||||||||||||||||||||||||||||||||||||||||
| IXZR08N120A-00 | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-MOS™ | Tube | 1 (Unlimited) | 1200V | 65MHz | /files/ixysrf-ixzr08n120a00-datasheets-9119.pdf | TO-247-3 | 10 Weeks | 23dB | PLUS247™-3 | 250W | 8A | N-Channel | 100V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF886H6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | SOT-343 | 4 | 6 Weeks | LOW NOISE | YES | DUAL | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-G4 | SILICON | SINGLE | AMPLIFIER | NPN | 0.025A | 4V | L B | 45000MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD2955-001 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | /files/rochesterelectronicsllc-ntd2955001-datasheets-9002.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLP7G22-05Z | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.14GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blp7g2205z-datasheets-9003.pdf | 12-VDFN Exposed Pad | 12 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | NO LEAD | NOT SPECIFIED | BLP7G22 | NOT SPECIFIED | 1 | 16dB | R-PDSO-N12 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 1W | MO-229 | 55mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SKY65050-372LF | Skyworks Solutions Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 6V | 2.4GHz | ROHS3 Compliant | 2008 | /files/skyworkssolutionsinc-sky65050372lfevb-datasheets-7157.pdf | 55mA | SC-82A, SOT-343 | 10 Weeks | yes | e3 | Tin (Sn) | COMPONENT | WIDE BAND MEDIUM POWER | 10dBm | 50Ohm | 15.5dB | 0.4dB | 10.5dBm | 20mA | pHEMT FET | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF556A,235 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 30V | ROHS3 Compliant | /files/nxpusainc-bf556c215-datasheets-6143.pdf | TO-236-3, SC-59, SOT-23-3 | 8 Weeks | e3 | Tin (Sn) | YES | BF556 | 3 | 150°C | Other Transistors | 2013-06-14 00:00:00 | 0.25W | JUNCTION | 7mA | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CGH21240F | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | 1 (Unlimited) | 84V | 1.8GHz~2.3GHz | 440117 | 15dB | 440117 | 240W | 1A | HEMT | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTF5P03T3 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-ntf5p03t3-datasheets-9018.pdf | 4 | no | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e0 | TIN LEAD | YES | DUAL | GULL WING | 240 | 4 | 30 | 1 | COMMERCIAL | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | TO-261AA | 3.7A | 19A | 0.1Ohm | 250 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 475-102N21A-00 | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DE | Tube | 1 (Unlimited) | 1000V | 6-SMD, Flat Lead Exposed Pad | 26 Weeks | 1800W | 24A | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD55015STR-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 165°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd55015stre-datasheets-9025.pdf | 5A | PowerSO-10 Exposed Bottom Pad | Lead Free | 2 | 25 Weeks | 3 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - annealed | 73W | DUAL | FLAT | 250 | PD55015 | 10 | Single | 30 | 73W | 1 | FET General Purpose Power | 14dB | Not Qualified | R-PDSO-F2 | 5A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 15W | 40V | 150mA | 7A | 40V | LDMOS | 12.5V | ||||||||||||||||||||||||||||||||||||||||
| IXZH10N50L2A | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-MOS™ | Tube | 1 (Unlimited) | 500V | 70MHz | /files/ixysrf-ixzh10n50l2a-datasheets-9029.pdf | TO-247-3 | 10 Weeks | 17dB | TO-247 (IXFH) | 200W | 10A | N-Channel | 100V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF556A,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 30V | DEPLETION MODE | ROHS3 Compliant | 2001 | /files/nxpusainc-bf556c215-datasheets-6143.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | 8541.21.00.75 | e3 | TIN | YES | DUAL | GULL WING | 260 | BF556 | 3 | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE | AMPLIFIER | 0.25W | 30V | JUNCTION | VERY HIGH FREQUENCY B | 7mA | TO-236AB | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXZH10N50L2B | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-MOS™ | Tube | 1 (Unlimited) | 500V | 70MHz | ROHS3 Compliant | /files/ixysrf-ixzh10n50l2a-datasheets-9029.pdf | TO-247-3 | 10 Weeks | 17dB | TO-247 (IXFH) | 200W | 10A | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LET9045TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 165°C | -65°C | 80V | 960MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-let9045tr-datasheets-7074.pdf | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 52 Weeks | 3 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - annealed | 79W | DUAL | GULL WING | 250 | LET9045 | 10 | NOT SPECIFIED | 1 | FET General Purpose Power | 18.5dB | Not Qualified | R-PDSO-G2 | 5A | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 59W | 45W | 1μA | 300mA | 9A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||
| MRF6VP41KHR7 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 110V | 450MHz | ROHS3 Compliant | /files/rochesterelectronicsllc-mrf6vp41khr7-datasheets-9038.pdf | NI-1230 | 20dB | NI-1230 | 1000W | 150mA | LDMOS (Dual) | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF879P,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 104V | 860MHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf879p112-datasheets-8962.pdf | SOT539A | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 21dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 104V | METAL-OXIDE SEMICONDUCTOR | 200W | 1.3A | LDMOS (Dual), Common Source | 42V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLP10H605Z | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 104V | 860MHz | ROHS3 Compliant | 2011 | 12-VDFN Exposed Pad | 13 Weeks | 22.4dB | 12-HVSON (6x5) | 5W | 30mA | LDMOS (Dual), Common Source | 50V |
