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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ELV | ECCN Code | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Noise Figure | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Highest Frequency Band | Current Rating (Amps) | JEDEC-95 Code | Current - Test | Drain Current-Max (Abs) (ID) | Drain to Source Breakdown Voltage | Transistor Type | Voltage - Test |
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| AFT05MP075NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 40V | 520MHz | ROHS3 Compliant | 2009 | TO-270AB | 10 Weeks | EAR99 | 8541.29.00.40 | e3 | Matte Tin (Sn) | YES | 260 | 225°C | 40 | FET General Purpose Power | 18.5dB | Single | N-CHANNEL | 690W | METAL-OXIDE SEMICONDUCTOR | 70W | 400mA | LDMOS (Dual) | 12.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF6V10010NR4 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 100V | 1.09GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nxpusainc-mrf6v10010nr4-datasheets-8776.pdf | PLD-1.5 | 4 | 10 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | QUAD | NO LEAD | 260 | MRF6V10010 | 200°C | 40 | 1 | FET General Purpose Power | 25dB | Not Qualified | R-PQCC-N4 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 100V | METAL-OXIDE SEMICONDUCTOR | 10W | 10mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||
| LET9045F | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tray | 1 (Unlimited) | 200°C | -65°C | 960MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-let9045f-datasheets-8652.pdf | 9A | M250 | Lead Free | 2 | 32 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 108W | DUAL | FLAT | LET9045 | 2 | Single | 1 | FET General Purpose Power | 17.7dB | R-PDFP-F2 | 9A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 59W | 300mA | 9A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||
| MRFE6S9060NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 66V | 880MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/nxpusainc-mrfe6s9060nr1-datasheets-8679.pdf | TO-270AA | 2 | 10 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | MRFE6S9060 | 225°C | 40 | 1 | FET General Purpose Power | 21.1dB | Not Qualified | R-PDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 66V | METAL-OXIDE SEMICONDUCTOR | 14W | 450mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||
| 3SK293(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 125°C | -55°C | 800MHz | RoHS Compliant | 2010 | 30mA | SC-82A, SOT-343 | 52 Weeks | 4 | unknown | 100mW | 22dB | 2.5dB | 30mA | 8V | 12.5V | 10mA | N-Channel Dual Gate | 6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ARF463AP1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | 81.36MHz | ENHANCEMENT MODE | RoHS Compliant | 1998 | /files/microsemicorporation-arf463ap1g-datasheets-8788.pdf | 9A | TO-247-3 | Lead Free | 3 | 25 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | e1 | TIN SILVER COPPER | 180W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | 15dB | Not Qualified | R-PSFM-T3 | 5.6 ns | 4.3ns | 4.2 ns | 13.5 ns | 9A | 30V | SINGLE | SOURCE | AMPLIFIER | 500V | METAL-OXIDE SEMICONDUCTOR | 100W | TO-247AD | 9A | N-Channel | 125V | |||||||||||||||||||||||||||||||
| IXZ2210N50L2 | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-MOS™ | Tube | 1 (Unlimited) | 500V | 70MHz | ROHS3 Compliant | 2016 | /files/ixysrf-ixz2210n50l2-datasheets-8662.pdf | 8-SMD, Flat Lead Exposed Pad | 10 Weeks | 17dB | 270W | 10A | 2 N-Channel (Dual) | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PTFC210202FC-V1-R0 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Strip | 3 (168 Hours) | 65V | 2.2GHz | RoHS Compliant | H-37248-4 | 12 Weeks | 21dB | H-37248-4 | 5W | 170mA | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VRF151 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tube | 1 (Unlimited) | 200°C | -65°C | 170V | 175MHz | ENHANCEMENT MODE | RoHS Compliant | 1998 | /files/microsemicorporation-vrf151-datasheets-8686.pdf | 16A | M174 | Lead Free | 4 | 27 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 300W | RADIAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | 14dB | Not Qualified | 16A | 40V | SINGLE | AMPLIFIER | 180V | METAL-OXIDE SEMICONDUCTOR | 150W | 1mA | 250mA | N-Channel | 50V | ||||||||||||||||||||||||||||||||||||||||
| 375-501N21A-00 | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DE | Tube | 1 (Unlimited) | 500V | 50MHz | /files/ixysrf-375501n21a00-datasheets-8700.pdf | 6-SMD, Flat Lead Exposed Pad | 26 Weeks | 940W | 25A | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VRF2944 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 150°C | -65°C | 170V | 30MHz | ENHANCEMENT MODE | RoHS Compliant | 1998 | /files/microsemicorporation-vrf2944-datasheets-8717.pdf | 50A | M177 | Lead Free | 4 | 32 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | YES | 795W | RADIAL | FLAT | 1 | 22dB | O-CRFM-F4 | 50A | 40V | SINGLE | SOURCE | SWITCHING | 180V | 170V | METAL-OXIDE SEMICONDUCTOR | 400W | 250mA | N-Channel | 50V | |||||||||||||||||||||||||||||||||||||||||||
| MRF148A | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tray | 1 (Unlimited) | 150°C | -65°C | 120V | 30MHz~175MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/macomtechnologysolutions-mrf148a-datasheets-8720.pdf | 6A | 211-07 | Lead Free | 4 | 20 Weeks | 4 | yes | Compliant | EAR99 | No | 115W | RADIAL | FLAT | 4 | Single | 1 | FET General Purpose Power | 15dB ~ 18dB | 6A | 40V | AMPLIFIER | 125V | METAL-OXIDE SEMICONDUCTOR | 30W | 100mA | 6A | 125V | N-Channel | 50V | ||||||||||||||||||||||||||||||||||||||
| BLS8G2731LS-400PU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 3.1GHz | ROHS3 Compliant | /files/ampleonusainc-bls8g2731ls400pu-datasheets-8543.pdf | SOT539B | 13dB | SOT539B | 400W | 200mA | LDMOS (Dual), Common Source | 32V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMBFJ211 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | DEPLETION MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-mmbfj211-datasheets-8603.pdf | 25V | 20mA | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 16 Weeks | 30mg | 3 | ACTIVE (Last Updated: 12 hours ago) | yes | EAR99 | 8541.21.00.95 | e3 | Tin (Sn) | 225mW | DUAL | GULL WING | NOT SPECIFIED | MMBFJ211 | Single | NOT SPECIFIED | 225mW | 1 | Other Transistors | Not Qualified | 20mA | -25V | AMPLIFIER | 25V | JUNCTION | VERY HIGH FREQUENCY B | N-Channel JFET | |||||||||||||||||||||||||||||||||||||
| BLS7G2729LS-350P,1 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.7GHz~2.9GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-bls7g2729ls350p1-datasheets-8550.pdf | SOT539B | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 13dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 350W | 200mA | LDMOS (Dual), Common Source | 32V | |||||||||||||||||||||||||||||||||||||||||||||||
| MRF6V3090NBR5 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 110V | 860MHz | Non-RoHS Compliant | /files/rochesterelectronicsllc-mrf6v3090nbr5-datasheets-8617.pdf | TO-272BB | 22dB | TO-272 WB-4 | 18W | 350mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS7G3135LS-350P,1 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 3.5GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-bls7g3135ls350p1-datasheets-8552.pdf | SOT539B | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 10dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 320W | 200mA | LDMOS (Dual), Common Source | 32V | |||||||||||||||||||||||||||||||||||||||||||||||
| MRF8HP21080HR5 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.17GHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-mrf8hp21080hr5-datasheets-8618.pdf | NI780-4 | 4 | yes | NOT SPECIFIED | YES | FLAT | 260 | 4 | 40 | 2 | 14.4dB | COMMERCIAL | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 16W | 150mA | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1317HR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 105V | 1.03GHz | ROHS3 Compliant | 2013 | /files/nxpusainc-mmrf1317hsr5-datasheets-6013.pdf | SOT-979A | 10 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 18.2dB | 1300W | 100mA | LDMOS (Dual) | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NE3509M04-T2-A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 4V | 2GHz | Non-RoHS Compliant | SOT-343F | 17.5dB | M04 | 0.4dB | 11dBm | 60mA | 10mA | HFET | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS7G2729L-350P,11 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.7GHz~2.9GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-bls7g2729ls350p1-datasheets-8550.pdf | SOT539A | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 13dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 350W | 200mA | LDMOS (Dual), Common Source | 32V | |||||||||||||||||||||||||||||||||||||||||||||||
| CGH40090PP | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tube | 1 (Unlimited) | 84V | 0Hz~4GHz | RoHS Compliant | 2015 | 28A | 440199 | 8 Weeks | CGH40* | 12.5dB | 100W | 1A | HEMT | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF176GV | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tray | 1 (Unlimited) | 200°C | -65°C | 225MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/macomtechnologysolutions-mrf176gv-datasheets-8561.pdf | 16A | 375-04 | Lead Free | 4 | 14 Weeks | 5 | yes | EAR99 | FLAT | NOT SPECIFIED | 4 | NOT SPECIFIED | 2 | FET General Purpose Power | 17dB | Not Qualified | R-CDFM-F4 | 16A | 40V | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | 400W | METAL-OXIDE SEMICONDUCTOR | 200W | 100mA | 125V | 2 N-Channel (Dual) Common Source | 50V | ||||||||||||||||||||||||||||||||||||||||
| CGHV96100F2 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 100V | 7.9GHz~9.6GHz | RoHS Compliant | 2017 | 12A | 440210 | 8 Weeks | 50Ohm | 10.2dB | 440210 | 131W | 12A | 1A | HEMT | 40V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS8G2731L-400PU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 3.1GHz | ROHS3 Compliant | /files/ampleonusainc-bls8g2731ls400pu-datasheets-8543.pdf | SOT539A | 13dB | SOT539A | 400W | 200mA | LDMOS (Dual), Common Source | 32V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLL8H1214LS-500U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 100V | 1.2GHz~1.4GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-bll8h1214ls500u-datasheets-8577.pdf | SOT539B | 13 Weeks | 17dB | SOT539B | 500W | 150mA | LDMOS (Dual), Common Source | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF6VP21KHR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 110V | 225MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/nxpusainc-mrf6vp21khr5-datasheets-8587.pdf | NI-1230 | 10 Weeks | EAR99 | MRF6VP21 | 225°C | FET General Purpose Power | 24dB | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1000W | 150mA | LDMOS (Dual) | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF7S27130HSR5 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.7GHz | ROHS3 Compliant | /files/rochesterelectronicsllc-mrf7s27130hsr5-datasheets-8594.pdf | NI-780S | 16.5dB | NI-780S | 23W | 1.5A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFG35010AR5 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 15V | 3.55GHz | DEPLETION MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-mrfg35010ar5-datasheets-8595.pdf | NI-360HF | 2 | no | NOT SPECIFIED | YES | DUAL | FLAT | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | 10dB | COMMERCIAL | R-CDFM-F2 | GALLIUM ARSENIDE | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 15V | HIGH ELECTRON MOBILITY | 1W | 140mA | pHEMT FET | 12V | ||||||||||||||||||||||||||||||||||||||||||||||
| STAC1011-350 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 80V | 1.03GHz~1.09GHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stac1011350-datasheets-8596.pdf | STAC265B | 2 | 32 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | YES | DUAL | FLAT | NOT SPECIFIED | STAC101 | 2 | NOT SPECIFIED | 1 | 15dB | R-PDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 350W | 150mA | LDMOS | 36V |
