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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Current Rating (Amps) | Current - Test | Drain Current-Max (Abs) (ID) | Drain to Source Breakdown Voltage | Transistor Type | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PD20015C | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | Not Applicable | 200°C | -65°C | 2GHz | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-pd20015c-datasheets-8180.pdf | 7A | M243 | 2 | 243 | EAR99 | HIGH RELIABILITY | 93W | DUAL | FLAT | NOT SPECIFIED | PD20015 | 2 | Single | NOT SPECIFIED | 93W | 1 | FET General Purpose Power | 11dB | Not Qualified | R-PDFM-F2 | 7A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 23W | 15W | 350mA | 7A | 40V | LDMOS | 13.6V | |||||||||||||||||||||
| MRFX035HR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 179V | 1.8MHz~512MHz | ROHS3 Compliant | NI-360H-2SB | 10 Weeks | NOT SPECIFIED | NOT SPECIFIED | 24.8dB | 35W | 10μA | 15mA | LDMOS | 65V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G24LS-100GVQ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/ampleonusainc-blf8g24ls100vu-datasheets-7649.pdf | SOT-1244C | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 18dB | R-CDSO-G6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 25W | 900mA | LDMOS | 28V | |||||||||||||||||||||||||||||||
| BLP05H675XRY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 135V | 108MHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blp05h675xrgy-datasheets-8027.pdf | SOT-1223-2 | 13 Weeks | 27dB | 4-HSOPF | 75W | 20mA | LDMOS (Dual), Common Source | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G38-10G,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 3.4GHz~3.6GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ampleonusainc-blf6g3810112-datasheets-6647.pdf | SOT-975C | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | BLF6G38 | NOT SPECIFIED | 1 | 14dB | S-CDSO-G2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 2W | 3.1A | 130mA | 3.1A | LDMOS | 28V | ||||||||||||||||||||||||||||
| PD57070-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 945MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd57070e-datasheets-8204.pdf | 7A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 11 Weeks | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | 95W | DUAL | GULL WING | 250 | PD57070 | 10 | Single | 30 | 95W | 1 | FET General Purpose Power | 14.7dB | Not Qualified | R-PDSO-G2 | 7A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 70W | 250mA | 7A | 65V | LDMOS | 28V | |||||||||||||||||||
| BLP05H6110XRGY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 135V | 108MHz | ROHS3 Compliant | 2010 | /files/ampleonusainc-blp05h6110xrgy-datasheets-8087.pdf | SOT-1224-2 | 13 Weeks | 27dB | 110W | 20mA | LDMOS (Dual), Common Source | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G27LS-150GVQ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 2.6GHz~2.7GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blf8g27ls150vu-datasheets-8056.pdf | SOT-1244C | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | BLF8G27 | NOT SPECIFIED | 1 | 18dB | R-CDSO-G6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 45W | 1.3A | LDMOS | 28V | ||||||||||||||||||||||||||||||
| BLP05H9S500PY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 108V | ROHS3 Compliant | /files/ampleonusainc-blp05h9s500py-datasheets-8099.pdf | OMP-780-4F-1 | 13 Weeks | 25.2dB | 500W | 2.8μA | LDMOS (Dual), Common Source | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G20LS-200V,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 1.81GHz~1.88GHz | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/ampleonusainc-blf8g20ls200v112-datasheets-8220.pdf | SOT-1120B | 6 | 13 Weeks | EAR99 | IEC-60134 | YES | QUAD | UNSPECIFIED | NOT SPECIFIED | BLF8G20 | NOT SPECIFIED | 1 | 17.5dB | R-CQFP-X6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 55W | 1.6A | LDMOS | 28V | |||||||||||||||||||||||||||||||
| BLF8G27LS-100U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.5GHz~2.7GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blf8g27ls100u-datasheets-7994.pdf | SOT-502B | 13 Weeks | BLF8G27 | 17dB | SOT502B | 25W | 900mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BLC9G22LS-120VTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.11GHz~2.18GHz | ROHS3 Compliant | /files/ampleonusainc-blc9g22ls120vtz-datasheets-8008.pdf | SOT-1271-2 | 13 Weeks | 18.1dB | 120W | 2.8μA | 700mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NE651R479A-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 8V | 1.9GHz | /files/cel-ne651r479aevpw35-datasheets-9609.pdf | 4-SMD, Flat Leads | 12dB | 27dBm | 1A | 50mA | HFET | 3.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PTVA120501EA-V1-R0 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 105V | 1.2GHz~1.4GHz | RoHS Compliant | H-36265-2 | 12 Weeks | 17dB | H-36265-2 | 50W | 50mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS9G3135L-115U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 28V | 3.1GHz~3.5GHz | /files/ampleonusainc-bls9g3135ls115u-datasheets-7718.pdf | SOT-1135A | 13 Weeks | 11dB | 115W | 600mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF8S21120HR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.17GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nxpusainc-mrf8s21120hsr3-datasheets-7699.pdf | SOT-957A | 2 | 5A991 | unknown | 8541.29.00.75 | YES | DUAL | FLAT | 260 | MRF8S21120 | 225°C | 40 | 1 | 17.6dB | Not Qualified | R-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 28W | 850mA | LDMOS | 28V | |||||||||||||||||||||||||||||
| BLP8G21S-160PVY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 1.88GHz~1.92GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blp8g21s160pvy-datasheets-8025.pdf | SOT-1221-1 | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 17.5dB | R-PDFP-F6 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 20W | 600mA | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||
| 2SK2854(TE12L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Digi-Reel® | 1 (Unlimited) | 10V | 849MHz | RoHS Compliant | 2014 | 500mA | TO-243AA | 11 Weeks | PW-MINI | 23dBmW | 500mA | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS9G3135LS-400U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 3.1GHz~3.5GHz | /files/ampleonusainc-bls9g3135ls400u-datasheets-8038.pdf | SOT-502B | 13 Weeks | 12dB | 400W | 4μA | 400mA | LDMOS | 32V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BLM8G0710S-30PBY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 957.5MHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blm8g0710s30pbgy-datasheets-6399.pdf | SOT-1211-3 | 13 Weeks | 35dB | 16-HSOPF | 3W | 30mA | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PD55008S-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd55008se-datasheets-8042.pdf | 40V | 4A | PowerSO-10 Exposed Bottom Pad | Lead Free | 2 | 25 Weeks | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | 52.8W | DUAL | FLAT | 250 | PD55008 | 10 | Single | 30 | 52.8W | 1 | FET General Purpose Power | 17dB | R-PDSO-F2 | 4A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 8W | 150mA | 4A | 40V | LDMOS | 12.5V | |||||||||||||||||
| BLF6G27-10G,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.5GHz~2.7GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | SOT-975C | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | BLF6G27 | NOT SPECIFIED | 1 | 19dB | S-CDSO-G2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 2W | 3.5A | 130mA | 3.5A | LDMOS | 28V | |||||||||||||||||||||||||||||
| BLF6G38-10G,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 3.4GHz~3.6GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ampleonusainc-blf6g3810112-datasheets-6647.pdf | SOT-975C | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | BLF6G38 | NOT SPECIFIED | 1 | 14dB | S-CDSO-G2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 2W | 3.1A | 130mA | 3.1A | LDMOS | 28V | ||||||||||||||||||||||||||||
| BLP05H635XRGY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 135V | 108MHz | ROHS3 Compliant | 2010 | /files/ampleonusainc-blp05h635xrgy-datasheets-7942.pdf | SOT-1224-2 | 13 Weeks | 27dB | 35W | 10mA | LDMOS (Dual), Common Source | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4037(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 1 (Unlimited) | 470MHz | RoHS Compliant | 2009 | 3A | SC-70, SOT-323 | 20W | 11.5dB | 3A | 3V | 12V | 36.5dBmW | 250mA | N-Channel | 6V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BLP05H635XRY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 135V | 108MHz | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blp05h635xrgy-datasheets-7942.pdf | SOT-1223-2 | 13 Weeks | 27dB | 4-HSOPF | 35W | 10mA | LDMOS (Dual), Common Source | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G27LS-150VU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.6GHz~2.7GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blf8g27ls150vu-datasheets-8056.pdf | SOT-1244B | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF8G27 | NOT SPECIFIED | 1 | 18dB | R-CDFP-F6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 45W | 1.3A | LDMOS | 28V | ||||||||||||||||||||||||||||||
| BLF6G27-10G,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.5GHz~2.7GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | SOT-975C | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | BLF6G27 | NOT SPECIFIED | 1 | 19dB | S-CDSO-G2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 2W | 3.5A | 130mA | 3.5A | LDMOS | 28V | |||||||||||||||||||||||||||||
| MMRF5015NR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 125V | 2.5GHz | ROHS3 Compliant | 2014 | /files/nxpusainc-mmrf5015nr5-datasheets-7980.pdf | TO-270AA | EAR99 | 8541.29.00.75 | NOT SPECIFIED | NOT SPECIFIED | 16.6dB | 125W | 350mA | HEMT | 50V | |||||||||||||||||||||||||||||||||||||||||||||||
| BLM7G1822S-40ABGY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 3 (168 Hours) | 65V | 2.17GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blm7g1822s20pby-datasheets-7792.pdf | SOT-1212-2 | 13 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 31.5dB | 2W | 20mA | LDMOS (Dual) | 28V |
