Products
Manufacturer
RFQ
NEWS
ContactSingle IGBTs(3888)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STGFW80V60F | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgfw80v60f-datasheets-1595.pdf | TO-3P-3 Full Pack | 32 Weeks | 6.961991g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | 79W | NOT SPECIFIED | STGFW80 | Single | NOT SPECIFIED | 79W | 600V | 1.85V | 600V | 120A | 400V, 80A, 10 Ω, 15V | 2.3V @ 15V, 80A | Trench Field Stop | 448nC | 240A | 60ns/220ns | 1.8mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGWT80V60F | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgfw80v60f-datasheets-1595.pdf | TO-3P-3, SC-65-3 | 32 Weeks | 6.756003g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | 469W | NOT SPECIFIED | STGWT80 | Single | NOT SPECIFIED | 469W | 600V | 1.85V | 600V | 120A | 400V, 80A, 10 Ω, 15V | 2.3V @ 15V, 80A | Trench Field Stop | 448nC | 240A | 60ns/220ns | 1.8mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW50HF60SD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw50hf60sd-datasheets-1601.pdf | TO-247-3 | 3 | No SVHC | 3 | EAR99 | No | e3 | Tin (Sn) | 284W | STGW50 | Single | 284W | 1 | Insulated Gate BIP Transistors | SILICON | POWER CONTROL | N-CHANNEL | 67 ns | 600V | 1.15V | 69 ns | 600V | 110A | 950 ns | 400V, 30A, 10 Ω, 15V | 20V | 5.7V | 1.45V @ 15V, 30A | 200nC | 130A | 50ns/220ns | 250μJ (on), 4.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| IRG4PSC71UDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 1999 | /files/infineon-irg4psc71udpbf-datasheets-0935.pdf | 600V | 85A | TO-274AA | 16.1mm | 24.8mm | 5.3mm | Lead Free | 3 | 13 Weeks | No SVHC | 3 | LOW CONDUCTION LOSS | No | 350W | Single | 350W | 1 | 150°C | 90 ns | 94ns | 245 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 85A | 82 ns | 600V | 1.95V | 179 ns | 600V | 85A | 503 ns | 480V, 60A, 5 Ω, 15V | 2V @ 15V, 60A | 340nC | 200A | 90ns/245ns | 3.26mJ (on), 2.27mJ (off) | ||||||||||||||||||||||||||||||||||
| IRG4PC50UPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2001 | /files/infineontechnologies-irg4pc50upbf-datasheets-1611.pdf | 600V | 55A | TO-247-3 | 15.875mm | 20.3mm | 5.3mm | Contains Lead, Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | No | 200W | Single | 200W | 1 | Insulated Gate BIP Transistors | 4nF | 32 ns | 20ns | 170 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 600V | 2V | 54 ns | 2V | 55A | 350 ns | 480V, 27A, 5 Ω, 15V | 20V | 6V | 2V @ 15V, 27A | 180nC | 220A | 32ns/170ns | 120μJ (on), 540μJ (off) | ||||||||||||||||||||||||||||||||
| STGW50HF60S | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | Lead Free | 3 | 6.500007g | EAR99 | No | e3 | Tin (Sn) | 284W | STGW50 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 50 ns | 250 ns | SILICON | POWER CONTROL | N-CHANNEL | 284W | 600V | 1.15V | 69 ns | 600V | 110A | 950 ns | 400V, 30A, 10 Ω, 15V | 20V | 5.7V | 1.45V @ 15V, 30A | 200nC | 130A | 50ns/220ns | 250μJ (on), 4.2mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| STGWA80H65FB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw80h65fb-datasheets-0546.pdf | TO-247-3 | 20 Weeks | 38.000013g | 3 | EAR99 | 469W | NOT SPECIFIED | STGWA80 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 469W | 650V | 1.6V | 650V | 120A | 400V, 80A, 10 Ω, 15V | 20V | 7V | 2V @ 15V, 80A | Trench Field Stop | 414nC | 240A | 84ns/280ns | 2.1mJ (on), 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| STGWT80H65FB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw80h65fb-datasheets-0546.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | 32 Weeks | 6.756003g | 3 | EAR99 | 469W | NOT SPECIFIED | STGWT80 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 469W | 650V | 1.6V | 650V | 120A | 400V, 80A, 10 Ω, 15V | 20V | 7V | 2V @ 15V, 80A | Trench Field Stop | 414nC | 240A | 84ns/280ns | 2.1mJ (on), 1.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| STGW60H65F | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw60h65f-datasheets-1546.pdf | TO-247-3 | Lead Free | 3 | 6.500007g | EAR99 | No | 360W | STGW60 | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 65 ns | 210 ns | SILICON | POWER CONTROL | N-CHANNEL | 360W | 650V | 1.9V | 96 ns | 600V | 120A | 265 ns | 400V, 60A, 10 Ω, 15V | 20V | 1.9V @ 15V, 60A | Trench Field Stop | 217nC | 240A | 65ns/180ns | 750μJ (on), 1.05mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| STGB19NC60KDT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb19nc60kdt4-datasheets-1498.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | 125W | GULL WING | STGB19 | 4 | Single | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | POWER CONTROL | N-CHANNEL | 125W | 600V | 31 ns | 600V | 38 ns | 600V | 35A | 270 ns | 480V, 12A, 10 Ω, 15V | 20V | 6.5V | 2.75V @ 15V, 12A | 55nC | 75A | 30ns/105ns | 165μJ (on), 255μJ (off) | |||||||||||||||||||||||||||||||||||||||
| IRG4PC50WPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4pc50wpbf-datasheets-1552.pdf | 600V | 55A | TO-247-3 | 15.875mm | 20.2946mm | 5.3mm | Lead Free | 3 | 14 Weeks | 38.000013g | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | 200W | SINGLE | Dual | 200W | 1 | Insulated Gate BIP Transistors | 46 ns | 33ns | 120 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 600V | 2.3V | 74 ns | 2.3V | 55A | 272 ns | 480V, 27A, 5 Ω, 15V | 20V | 6V | 2.3V @ 15V, 27A | 180nC | 220A | 46ns/120ns | 80μJ (on), 320μJ (off) | 86ns | |||||||||||||||||||||||||||||
| STGW60H65DRF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | Lead Free | 32 Weeks | 6.500007g | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | 420W | STGW60 | Single | Insulated Gate BIP Transistors | N-CHANNEL | 420W | 19 ns | 650V | 1.9V | 650V | 120A | 400V, 60A, 10 Ω, 15V | 20V | 2.4V @ 15V, 60A | Trench Field Stop | 217nC | 240A | 85ns/178ns | 940μJ (on), 1.06mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| STGW20NC60V | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb20nc60v-datasheets-5090.pdf | 600V | 30A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 8 Weeks | 38.000013g | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | 200W | STGW20 | 3 | Single | 200W | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 31 ns | 11ns | 100 ns | SILICON | POWER CONTROL | N-CHANNEL | 30A | TO-247AC | 600V | 2.5V | 42.5 ns | 600V | 60A | 280 ns | 390V, 20A, 3.3 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 20A | 100nC | 100A | 31ns/100ns | 220μJ (on), 330μJ (off) | |||||||||||||||||||||||||||||
| IRG4PC40UD-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 1998 | /files/infineontechnologies-irg4pc40udpbf-datasheets-0225.pdf | TO-247-3 | 3 | 14 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 160W | TO-247AD | 42ns | 92 ns | 600V | 40A | 330 ns | 480V, 20A, 10 Ω, 15V | 2.1V @ 15V, 20A | 100nC | 160A | 54ns/110ns | 710μJ (on), 350μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| STGWA45HF60WDI | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa45hf60wdi-datasheets-0920.pdf | TO-247-3 | Lead Free | 3 | 6.500007g | EAR99 | No | e3 | Tin (Sn) | 310W | STGW45 | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 30 ns | 145 ns | SILICON | POWER CONTROL | N-CHANNEL | 310W | 90 ns | 600V | 1.9V | 600V | 80A | 400V, 30A, 4.7 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 30A | 160nC | 150A | -/145ns | 330μJ (off) | |||||||||||||||||||||||||||||||||||||||||
| STGWT60H60DLFB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw60h60dlfb-datasheets-6804.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | 32 Weeks | 6.756003g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 375W | STGWT60 | Single | 375W | 600V | 1.6V | 600V | 80A | 400V, 60A, 5 Ω, 15V | 2V @ 15V, 60A | Trench Field Stop | 306nC | 240A | -/160ns | 626μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4PH40UPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4ph40upbf-datasheets-1586.pdf | 1.2kV | 41A | TO-247-3 | 15.875mm | 20.3mm | 5.3mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | 160W | Single | 160W | 1 | Insulated Gate BIP Transistors | 24 ns | 18ns | 220 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 1.2kV | 2.43V | 49 ns | 3.1V | 41A | 1200V | 690 ns | 960V, 21A, 10 Ω, 15V | 20V | 3V | 3.1V @ 15V, 21A | 86nC | 82A | 24ns/220ns | 1.04mJ (on), 3.4mJ (off) | 190ns | ||||||||||||||||||||||||||||||
| STGWT60H65FB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw60h65fb-datasheets-6886.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 32 Weeks | 6.756003g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 375W | STGWT60 | Single | 375W | 650V | 1.6V | 650V | 80A | 400V, 60A, 5 Ω, 15V | 2.3V @ 15V, 60A | Trench Field Stop | 306nC | 240A | 51ns/160ns | 1.09mJ (on), 626μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4PH40KDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4ph40kdpbf-datasheets-1529.pdf | 1.2kV | 30A | TO-247-3 | 15.875mm | 20.3mm | 5.3mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 160W | 250 | Single | 30 | 160W | 1 | Insulated Gate BIP Transistors | 50 ns | 31ns | 96 ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | TO-247AC | 63 ns | 1.2kV | 3.4V | 82 ns | 3.4V | 30A | 1200V | 730 ns | 800V, 15A, 10 Ω, 15V | 20V | 3V | 3.4V @ 15V, 15A | 94nC | 60A | 50ns/96ns | 1.31mJ (on), 1.12mJ (off) | |||||||||||||||||||||||||||
| IXGT6N170 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/ixys-ixgh6n170a-datasheets-0586.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 4.500005g | yes | unknown | e3 | Matte Tin (Sn) | 75W | GULL WING | NOT SPECIFIED | IXG*6N170 | 4 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 75W | 1.7kV | 4V | 85 ns | 1.7kV | 12A | 1700V | 600 ns | 1360V, 6A, 33 Ω, 15V | 20V | 5V | 4V @ 15V, 6A | NPT | 20nC | 24A | 40ns/250ns | 1.5mJ (off) | |||||||||||||||||||||||||||||||||
| STGWA35HF60WDI | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw35hf60wdi-datasheets-5097.pdf | TO-247-3 | 3 | EAR99 | No | e3 | Tin (Sn) | 260W | STGW35 | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | POWER CONTROL | N-CHANNEL | 260W | 85 ns | 600V | 45 ns | 600V | 70A | 295 ns | 390V, 20A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 20A | 140nC | 150A | 30ns/175ns | 185μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| STGFW35HF60W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw35hf60w-datasheets-5248.pdf | TO-3P-3 Full Pack | 6.961991g | 3 | No | 88W | STGFW35 | Single | Insulated Gate BIP Transistors | N-CHANNEL | 88W | 600V | 2.5V | 600V | 36A | 400V, 20A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 20A | 140nC | 150A | 30ns/175ns | 290μJ (on), 185μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW50NC60W | STMicroelectronics | $6.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw50nc60w-datasheets-1541.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | 3 | 38.000013g | No | e3 | Tin (Sn) | 285W | STGW50 | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | POWER CONTROL | N-CHANNEL | 285W | 600V | 69 ns | 600V | 100A | 343 ns | 390V, 40A, 10 Ω, 15V | 20V | 5.75V | 2.6V @ 15V, 40A | 195nC | 52ns/240ns | 365μJ (on), 560μJ (off) | |||||||||||||||||||||||||||||||||||||||||
| IRG4PH30KPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4ph30kpbf-datasheets-1455.pdf | 1.2kV | 20A | TO-247-3 | 15.875mm | 20.3mm | 5.3mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | 100W | Single | 100W | 1 | Insulated Gate BIP Transistors | 23ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | TO-247AC | 1.2kV | 3.1V | 53 ns | 4.2V | 20A | 1200V | 640 ns | 960V, 10A, 23 Ω, 15V | 20V | 6V | 4.2V @ 15V, 10A | 53nC | 40A | 28ns/200ns | 640μJ (on), 920μJ (off) | 170ns | ||||||||||||||||||||||||||||||||
| IRG4BC30SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4bc30spbf-datasheets-1462.pdf | 600V | 34A | TO-220-3 | 10.54mm | 15.24mm | 4.69mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 100W | SINGLE | 250 | Dual | 30 | 100W | 1 | Insulated Gate BIP Transistors | 22 ns | 18ns | 540 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 1.4V | 40 ns | 1.6V | 34A | 1550 ns | 480V, 18A, 23 Ω, 15V | 20V | 6V | 1.6V @ 15V, 18A | 50nC | 68A | 22ns/540ns | 260μJ (on), 3.45mJ (off) | 590ns | |||||||||||||||||||||||||||
| RJP60F5DPK-01#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjp60f5dpk01t0-datasheets-1470.pdf | TO-3P-3, SC-65-3 | 16 Weeks | 260.4W | RJP60F | TO-3P | 260.4W | 600V | 1.8V | 80A | 600V | 80A | 400V, 30A, 5Ohm, 15V | 1.8V @ 15V, 40A | 74nC | 160A | 53ns/90ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW19NC60W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb19nc60wt4-datasheets-0981.pdf | TO-247-3 | 3 | EAR99 | No | 140W | STGW19 | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | MOTOR CONTROL | N-CHANNEL | TO-247AC | 600V | 33 ns | 600V | 40A | 42A | 204 ns | 390V, 12A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 12A | 53nC | 25ns/90ns | 81μJ (on), 125μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC30FD-SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/infineontechnologies-irg4bc30fdstrrp-datasheets-1813.pdf | 600V | 31A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.652mm | Lead Free | 2 | 13 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 100W | GULL WING | 260 | Single | 30 | 100W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 27ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 42 ns | 600V | 1.8V | 69 ns | 1.8V | 31A | 620 ns | 480V, 17A, 23 Ω, 15V | 20V | 6V | 1.8V @ 15V, 17A | 51nC | 124A | 42ns/230ns | 630μJ (on), 1.39mJ (off) | ||||||||||||||||||||||||||||||
| STGWT40V60DLF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40v60dlf-datasheets-6187.pdf | TO-3P-3, SC-65-3 | 15.7mm | 26.7mm | 5.7mm | 3 | EAR99 | No | 283W | STGWT40 | Single | 283W | Insulated Gate BIP Transistors | N-CHANNEL | 600V | 2.35V | 600V | 80A | 400V, 40A, 10 Ω, 15V | 20V | 2.3V @ 15V, 40A | Trench Field Stop | 226nC | 160A | -/208ns | 411μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4PC30UDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4pc30udpbf-datasheets-1489.pdf | 600V | 23A | TO-247-3 | 15.875mm | 20.3mm | 5.3mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | ULTRA FAST SOFT RECOVERY | No | 100W | Single | 100W | 1 | Insulated Gate BIP Transistors | 40 ns | 21ns | 91 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 42 ns | 600V | 2.1V | 62 ns | 2.1V | 23A | 300 ns | 480V, 12A, 23 Ω, 15V | 20V | 6V | 2.1V @ 15V, 12A | 50nC | 92A | 40ns/91ns | 380μJ (on), 160μJ (off) |
