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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| IRGIB15B60KD1P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-irgib15b60kd1p-datasheets-1278.pdf | 600V | 12A | TO-220-3 Full Pack | 10.63mm | 16.12mm | 4.83mm | Contains Lead | 3 | 16 Weeks | 2.299997g | No SVHC | 3 | EAR99 | No | 52W | Single | 52W | 1 | Insulated Gate BIP Transistors | 35ns | SILICON | ISOLATED | MOTOR CONTROL | N-CHANNEL | TO-220AB | 67 ns | 600V | 1.8V | 55 ns | 2.2V | 19A | 250 ns | 400V, 15A, 22 Ω, 15V | 20V | 5.5V | 2.2V @ 15V, 15A | NPT | 56nC | 38A | 30ns/173ns | 127μJ (on), 334μJ (off) | ||||||||||||||||||||||||||||||||||||||
| IRG4BC30FDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 1998 | /files/infineontechnologies-irg4bc30fdpbf-datasheets-1287.pdf | 600V | 31A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | 100W | Single | 100W | 1 | Insulated Gate BIP Transistors | 42 ns | 26ns | 230 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 42 ns | 600V | 1.59V | 69 ns | 1.8V | 31A | 620 ns | 480V, 17A, 23 Ω, 15V | 20V | 6V | 1.8V @ 15V, 17A | 51nC | 124A | 42ns/230ns | 630μJ (on), 1.39mJ (off) | |||||||||||||||||||||||||||||||||||||
| NGTB45N60S2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/onsemiconductor-ngtb45n60s2wg-datasheets-1303.pdf | TO-247 | 16.25mm | 21.4mm | 5.3mm | Lead Free | 4 Weeks | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | 300W | Single | 498 ns | 600V | 2V | 2.3V | 90A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGFW20V60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgfw20v60df-datasheets-1308.pdf | TO-3P-3 Full Pack | 15.7mm | 26.7mm | 5.7mm | 32 Weeks | 6.961991g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | 52W | NOT SPECIFIED | STGFW20 | Single | NOT SPECIFIED | 52W | 40 ns | 600V | 1.8V | 600V | 40A | 400V, 20A, 15V | 2.2V @ 15V, 20A | Trench Field Stop | 116nC | 80A | 38ns/149ns | 200μJ (on), 130μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40W-SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-irg4bc40wstrrp-datasheets-2260.pdf | 600V | 40A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.83mm | 4.826mm | Lead Free | 2 | 8 Weeks | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 160W | SINGLE | GULL WING | 260 | Dual | 30 | 160W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 27 ns | 23ns | 100 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 2.05V | 48 ns | 2.5V | 40A | 294 ns | 480V, 20A, 10 Ω, 15V | 20V | 6V | 2.5V @ 15V, 20A | 98nC | 160A | 27ns/100ns | 110μJ (on), 230μJ (off) | 110ns | |||||||||||||||||||||||||||||||
| IRG4IBC30WPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-irg4ibc30wpbf-datasheets-1187.pdf | 600V | 17A | TO-220-3 Full Pack | 10.6172mm | 14.224mm | 4.826mm | Lead Free | 3 | 16 Weeks | 3 | EAR99 | LOW CONDUCTION LOSS | No | 45W | SINGLE | Dual | 45W | 1 | Insulated Gate BIP Transistors | 25 ns | 16ns | 99 ns | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 2.1V | 41 ns | 2.7V | 17A | 300 ns | 480V, 12A, 23 Ω, 15V | 20V | 6V | 2.7V @ 15V, 12A | 51nC | 92A | 25ns/99ns | 130μJ (on), 130μJ (off) | 100ns | |||||||||||||||||||||||||||||||||||||
| IRG4PSH71KDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 1999 | /files/infineontechnologies-irg4psh71kdpbf-datasheets-1214.pdf | 1.2kV | 78A | TO-274AA | 16.0782mm | 20.8mm | 5.3mm | Lead Free | 3 | 7 Weeks | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 350W | 250 | Single | 30 | 350W | 1 | Insulated Gate BIP Transistors | 84ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 107 ns | 1.2kV | 2.97V | 152 ns | 3.9V | 78A | 1200V | 660 ns | 800V, 42A, 5 Ω, 15V | 20V | 6V | 3.9V @ 15V, 42A | 410nC | 156A | 67ns/230ns | 5.68mJ (on), 3.23mJ (off) | 190ns | |||||||||||||||||||||||||||||||||
| IRGS30B60KTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/infineontechnologies-irgs30b60kpbf-datasheets-5040.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 9 Weeks | 260.39037mg | 3 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 370W | GULL WING | 260 | IRGS30B60KPBF | Single | 30 | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 370W | 600V | 600V | 1.95V | 74 ns | 2.35V | 78A | 237 ns | 400V, 30A, 10 Ω, 15V | 20V | 5.5V | 2.35V @ 15V, 30A | NPT | 102nC | 120A | 46ns/185ns | 350μJ (on), 825μJ (off) | 42ns | ||||||||||||||||||||||||||||||||||||||||
| IRG4BC30KD-SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-irg4bc30kdstrrp-datasheets-1728.pdf | 600V | 28A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.65mm | Lead Free | 2 | 14 Weeks | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 100W | GULL WING | 260 | IRG4BC30KD-SPBF | Single | 30 | 100W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 60 ns | 42ns | 160 ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 42 ns | 600V | 2.7V | 100 ns | 2.7V | 28A | 370 ns | 480V, 16A, 23 Ω, 15V | 20V | 6V | 2.7V @ 15V, 16A | 67nC | 56A | 60ns/160ns | 600μJ (on), 580μJ (off) | 120ns | ||||||||||||||||||||||||||||||
| IRG4IBC30UDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4ibc30udpbf-datasheets-1239.pdf | 600V | 17A | TO-220-3 Full Pack | 10.6172mm | 9.02mm | 4.826mm | Lead Free | 3 | 16 Weeks | 2.299997g | No SVHC | 3 | EAR99 | ULTRA FAST SOFT RECOVERY | No | 45W | Single | 45W | 1 | Insulated Gate BIP Transistors | 40 ns | 21ns | 91 ns | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | TO-220AB | 42 ns | 600V | 1.95V | 62 ns | 2.1V | 17A | 300 ns | 480V, 12A, 23 Ω, 15V | 20V | 6V | 2.1V @ 15V, 12A | 50nC | 68A | 40ns/91ns | 380μJ (on), 160μJ (off) | |||||||||||||||||||||||||||||||||||
| IXGF32N170 | IXYS | $48.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixgf32n170-datasheets-1250.pdf | i4-Pac™-5 (3 Leads) | Lead Free | 3 | 28 Weeks | No SVHC | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NPN | 200W | NOT SPECIFIED | IXG*32N170 | 3 | Single | NOT SPECIFIED | 200W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | ISOLATED | POWER CONTROL | 1.7kV | 2.7V | 90 ns | 1.7kV | 44A | 1700V | 920 ns | 1020V, 32A, 2.7 Ω, 15V | 20V | 5V | 3.5V @ 15V, 32A | NPT | 146nC | 200A | 45ns/270ns | 10.6mJ (off) | 500ns | |||||||||||||||||||||||||||||||||||||
| STGB3NC120HDT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb3nc120hdt4-datasheets-1251.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | Lead Free | 2 | 8 Weeks | 2.000002g | 3 | ACTIVE (Last Updated: 6 months ago) | EAR99 | LOW CONDUCTION LOSS | Tin | No | D2Pak | e3 | 75W | GULL WING | 245 | STGB3 | Single | 30 | 75W | 1 | 150°C | R-PSSO-G2 | 15 ns | 118 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 14A | 1.2kV | 51 ns | 1.2kV | 2.3V | 18.5 ns | 1.2kV | 14A | 1200V | 680 ns | 800V, 3A, 10 Ω, 15V | 2.8V @ 15V, 3A | 24nC | 20A | 15ns/118ns | 236μJ (on), 290μJ (off) | |||||||||||||||||||||||||||||||||
| IRG4BC40FPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4bc40fpbf-datasheets-1263.pdf | 600V | 49A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Lead Free | 3 | 16 Weeks | 6.000006g | No SVHC | 3 | EAR99 | FAST SWITCHING | No | 160W | SINGLE | Dual | 160W | 1 | Insulated Gate BIP Transistors | 26 ns | 18ns | 240 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 1.7V | 46 ns | 1.7V | 49A | 690 ns | 480V, 27A, 10 Ω, 15V | 20V | 6V | 1.7V @ 15V, 27A | 100nC | 196A | 26ns/240ns | 370μJ (on), 1.81mJ (off) | |||||||||||||||||||||||||||||||||||
| IXGT40N120B2D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgh40n120b2d1-datasheets-0889.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 8 Weeks | 4.500005g | 3 | yes | unknown | e3 | PURE TIN | 380W | GULL WING | NOT SPECIFIED | IXG*40N120 | 4 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 380W | 100 ns | 1.2kV | 79 ns | 1.2kV | 75A | 1200V | 770 ns | 960V, 40A, 2 Ω, 15V | 20V | 5V | 3.5V @ 15V, 40A | PT | 138nC | 200A | 21ns/290ns | 4.5mJ (on), 3mJ (off) | 270ns | ||||||||||||||||||||||||||||||||||
| IRG4PH20KPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-irg4ph20kpbf-datasheets-1159.pdf | 1.2kV | 11A | TO-247-3 | 15.875mm | 20.701mm | 5.3086mm | Lead Free | 14 Weeks | 38.000013g | No SVHC | 3 | No | 60W | Single | 60W | TO-247AC | 23 ns | 28ns | 93 ns | 60W | 1.2kV | 3.17V | 4.3V | 11A | 1200V | 11A | 960V, 5A, 50Ohm, 15V | 4.3V @ 15V, 5A | 28nC | 22A | 23ns/93ns | 450μJ (on), 440μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| STGWT30V60F | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgfw30v60f-datasheets-1629.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | 32 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 260W | STGWT30 | Single | 260W | 600V | 2.3V | 600V | 60A | 400V, 30A, 10 Ω, 15V | 2.3V @ 15V, 30A | Trench Field Stop | 163nC | 120A | 45ns/189ns | 383μJ (on), 233μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4IBC10UDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 1999 | /files/infineontechnologies-irg4ibc10udpbf-datasheets-1171.pdf | 600V | 6.8A | TO-220-3 Full Pack | 10.7442mm | 16.129mm | 4.826mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | EAR99 | ULTRA FAST | No | 25W | Single | 25W | 1 | Insulated Gate BIP Transistors | 16ns | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | TO-220AB | 28 ns | 600V | 2.15V | 56 ns | 2.6V | 6.8A | 345 ns | 480V, 5A, 100 Ω, 15V | 20V | 6V | 2.6V @ 15V, 5A | 15nC | 27A | 40ns/87ns | 140μJ (on), 120μJ (off) | 210ns | |||||||||||||||||||||||||||||||||||||
| IXGX82N120A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 3 | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.25kW | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSIP-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 1250W | 1.2kV | 109 ns | 2.05V | 260A | 1200V | 1590 ns | 600V, 80A, 2 Ω, 15V | 20V | 5V | 2.05V @ 15V, 82A | PT | 340nC | 580A | 34ns/265ns | 5.5mJ (on), 12.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| FGB40N60SM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fgb40n60sm-datasheets-1179.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 4 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 349W | GULL WING | FGB40N60 | Single | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 349W | 600V | 600V | 2.3V | 37 ns | 600V | 80A | 28ns | 132 ns | 400V, 40A, 6 Ω, 15V | 20V | 6V | 2.3V @ 15V, 40A | Field Stop | 119nC | 120A | 12ns/92ns | 870μJ (on), 260μJ (off) | 17ns | |||||||||||||||||||||||||||||||||
| STGF35HF60W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw35hf60w-datasheets-5248.pdf | TO-220-3 Full Pack | Lead Free | 2.299997g | EAR99 | No | 40W | STGF35 | Single | Insulated Gate BIP Transistors | 30 ns | 225 ns | N-CHANNEL | 40W | 600V | 2.5V | 600V | 19A | 400V, 20A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 20A | 140nC | 150A | 30ns/175ns | 290μJ (on), 185μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOKS40B60D1 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 278W | TO-247 | 278W | 600V | 2.4V | 80A | 600V | 80A | 400V, 40A, 7.5Ohm, 15V | 2.4V @ 15V, 40A | 45nC | 140A | 29ns/74ns | 1.55mJ (on), 300μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGR55N120A3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgr55n120a3h1-datasheets-1107.pdf | TO-247-3 | 3 | 8 Weeks | yes | ULTRA FAST, LOW CONDUCTION LOSS | unknown | e1 | TIN SILVER COPPER | 200W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 200W | TO-247AD | 200 ns | 1.2kV | 70 ns | 2.35V | 70A | 1200V | 1253 ns | 960V, 55A, 3 Ω, 15V | 20V | 5V | 2.35V @ 15V, 55A | PT | 185nC | 330A | 23ns/365ns | 5.1mJ (on), 13.3mJ (off) | ||||||||||||||||||||||||||||||||||||||
| IRG4BH20K-SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | 1.2kV | 11A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead, Lead Free | 2 | 9 Weeks | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 60W | GULL WING | 260 | Single | 30 | 60W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 26ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 1.2kV | 3.17V | 51 ns | 4.3V | 11A | 1200V | 720 ns | 960V, 5A, 50 Ω, 15V | 20V | 6.5V | 4.3V @ 15V, 5A | 28nC | 22A | 23ns/93ns | 450μJ (on), 440μJ (off) | 400ns | ||||||||||||||||||||||||||||||||||
| STGB40H65FB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HB | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb40h65fb-datasheets-1067.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | ACTIVE (Last Updated: 7 months ago) | NOT SPECIFIED | STGB40 | NOT SPECIFIED | 283W | 650V | 80A | 400V, 40A, 5 Ω, 15V | 2V @ 15V, 40A | Trench Field Stop | 210nC | 160A | 40ns/142ns | 498μJ (on), 363μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGB30NC60KT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb30nc60kt4-datasheets-1108.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | yes | No | 185W | GULL WING | STGB30 | 4 | Single | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 29 ns | 120 ns | SILICON | POWER CONTROL | N-CHANNEL | 185W | 600V | 600V | 41 ns | 600V | 60A | 290 ns | 480V, 20A, 10 Ω, 15V | 20V | 6.5V | 2.7V @ 15V, 20A | 96nC | 125A | 29ns/120ns | 350μJ (on), 435μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| STGWT30H65FB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwt30h65fb-datasheets-1133.pdf | TO-3P-3, SC-65-3 | Lead Free | 32 Weeks | 6.756003g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | 260W | NOT SPECIFIED | STGWT30 | Single | NOT SPECIFIED | 260W | 650V | 1.75V | 650V | 30A | 400V, 30A, 10 Ω, 15V | 2V @ 15V, 30A | Trench Field Stop | 149nC | 120A | 37ns/146ns | 151μJ (on), 293μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGFW30H65FB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwt30h65fb-datasheets-1133.pdf | TO-3PFM, SC-93-3 | 32 Weeks | 6.961991g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | 58W | NOT SPECIFIED | STGFW30 | Single | NOT SPECIFIED | 58W | 650V | 1.55V | 650V | 60A | 400V, 30A, 10 Ω, 15V | 2V @ 15V, 30A | Trench Field Stop | 149nC | 120A | 37ns/146ns | 151μJ (on), 293μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK20B65M2 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 227W | TO-247 | 227W | 292 ns | 650V | 2.15V | 40A | 650V | 40A | 400V, 20A, 15Ohm, 15V | 2.15V @ 15V, 20A | 46nC | 60A | 26ns/123ns | 580μJ (on), 280μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGX72N60C3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgx72n60c3h1-datasheets-1146.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | yes | LOW CONDUCTION LOSS | unknown | e1 | TIN SILVER COPPER | 540W | SINGLE | NOT SPECIFIED | IXG*72N60 | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | 27 ns | 77 ns | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 540W | 140 ns | 600V | 62 ns | 2.5V | 75A | 244 ns | 480V, 50A, 2 Ω, 15V | 20V | 5.5V | 2.5V @ 15V, 50A | PT | 174nC | 360A | 27ns/77ns | 1.03mJ (on), 480μJ (off) | 110ns | |||||||||||||||||||||||||||||||||||
| STGW20V60F | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwt20h60df-datasheets-1859.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | 3 | 20 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | 167W | STGW20 | 3 | Single | 167W | 1 | SILICON | POWER CONTROL | N-CHANNEL | 600V | 2.3V | 49 ns | 600V | 40A | 173 ns | 400V, 20A, 15V | 2.2V @ 15V, 20A | Trench Field Stop | 116nC | 80A | 38ns/149ns | 200μJ (on), 130μJ (off) |
