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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| IRG4PH50SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-irg4ph50spbf-datasheets-0274.pdf | 1.2kV | 57A | TO-247-3 | 15.875mm | 24.99mm | 5.3mm | Lead Free | 3 | 14 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 200W | Single | 200W | 1 | 150°C | 3.6nF | 32 ns | 29ns | 845 ns | 57A | 30V | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 57A | TO-247AC | 1.2kV | 1.75V | 62 ns | 1.2kV | 57A | 1200V | 2170 ns | 960V, 33A, 5 Ω, 15V | 1.7V @ 15V, 33A | 167nC | 114A | 32ns/845ns | 1.8mJ (on), 19.6mJ (off) | ||||||||||||||||||||||||||||||||||
| IXGA20N120B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgp20n120b3-datasheets-0192.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | LOW CONDUCTION LOSS | unknown | e3 | PURE TIN | 180W | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 180W | TO-263AA | 1.2kV | 61 ns | 3.1V | 36A | 1200V | 720 ns | 600V, 16A, 15 Ω, 15V | 20V | 5V | 3.1V @ 15V, 16A | PT | 51nC | 80A | 16ns/150ns | 920μJ (on), 560μJ (off) | |||||||||||||||||||||||||||||||||||||||
| IXGA12N60CD1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™, Lightspeed™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2002 | /files/ixys-ixgp12n60cd1-datasheets-4811.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.59999g | 3 | yes | not_compliant | e3 | Matte Tin (Sn) | 100W | GULL WING | NOT SPECIFIED | IXG*12N60 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 100W | 35ns | 600V | 40 ns | 600V | 24A | 170 ns | 480V, 12A, 18 Ω, 15V | 20V | 5V | 2.7V @ 15V, 12A | 32nC | 48A | 20ns/60ns | 90μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| APT15GT60BRDQ1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt15gt60brdq1g-datasheets-0220.pdf | 600V | 42A | TO-247-3 | Lead Free | 3 | 25 Weeks | yes | No | e1 | TIN SILVER COPPER | 184W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 600V | 14 ns | 600V | 42A | 225 ns | 400V, 15A, 10 Ω, 15V | 30V | 5V | 2.5V @ 15V, 15A | NPT | 75nC | 45A | 6ns/105ns | 150μJ (on), 215μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| IXGA48N60A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh30n60c3d1-datasheets-0556.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | 1.59999g | yes | LOW CONDUCTION LOSS | unknown | e3 | PURE TIN | 300W | SINGLE | GULL WING | NOT SPECIFIED | IXG*48N60 | 4 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | 600V | 54 ns | 1.35V | 120A | 925 ns | 480V, 32A, 5 Ω, 15V | 20V | 5V | 1.35V @ 15V, 32A | PT | 110nC | 300A | 25ns/334ns | 950μJ (on), 2.9mJ (off) | |||||||||||||||||||||||||||||||||||||
| IRG4PC40UDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 1998 | /files/infineontechnologies-irg4pc40udpbf-datasheets-0225.pdf | 600V | 40A | TO-247-3 | 15.875mm | 24.6mm | 5.3mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | No | 160W | Single | 160W | 1 | Insulated Gate BIP Transistors | 150°C | 54 ns | 57ns | 110 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 40A | TO-247AC | 42 ns | 600V | 2.15V | 92 ns | 600V | 40A | 330 ns | 480V, 20A, 10 Ω, 15V | 20V | 6V | 2.1V @ 15V, 20A | 100nC | 160A | 54ns/110ns | 710μJ (on), 350μJ (off) | 120ns | ||||||||||||||||||||||||||||||||||
| IXGP28N120B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/ixys-ixgp28n120b-datasheets-0233.pdf | TO-220-3 | 3 | 8 Weeks | 2.299997g | yes | e3 | Matte Tin (Sn) | 250W | NOT SPECIFIED | IXG*28N120 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 250W | TO-220AB | 1.2kV | 63 ns | 1.2kV | 50A | 1200V | 550 ns | 960V, 28A, 5 Ω, 15V | 3.5V @ 15V, 28A | 92nC | 150A | 30ns/180ns | 2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| IXGH36N60A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/ixys-ixgp36n60a3-datasheets-2609.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 220W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 600V | 43 ns | 1.4V | 1000 ns | 400V, 30A, 5 Ω, 15V | 20V | 5.5V | 1.4V @ 15V, 30A | PT | 80nC | 200A | 18ns/330ns | 740μJ (on), 3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40W-LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/infineontechnologies-irg4bc40wstrrp-datasheets-2260.pdf | 600V | 40A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.652mm | 4.826mm | Lead Free | 3 | 9 Weeks | 2.084002g | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 160W | SINGLE | 260 | Dual | 30 | 160W | 1 | Insulated Gate BIP Transistors | 22ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 2.36V | 48 ns | 2.5V | 40A | 294 ns | 480V, 20A, 10 Ω, 15V | 20V | 6V | 2.5V @ 15V, 20A | 98nC | 160A | 27ns/100ns | 110μJ (on), 230μJ (off) | 110ns | ||||||||||||||||||||||||||||||||||
| IGW40N65H5AXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/infineontechnologies-igw40n65h5axksa1-datasheets-0243.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 3 | yes | EAR99 | Halogen Free | 250W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 250W | 650V | 31 ns | 650V | 74A | 203 ns | 400V, 20A, 15 Ω, 15V | 2.1V @ 15V, 40A | Trench | 92nC | 120A | 20ns/149ns | 360μJ (on), 110μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH10N100A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | TO-247-3 | 3 | HIGH SPEED | 100W | SINGLE | IXG*10N100 | 150°C | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 100W | TO-247AD | 1kV | 300 ns | 4V | 20A | 1000V | 1550 ns | 4 V | 20V | 5V | 4V @ 15V, 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJH60F3DPQ-A0#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjh60f3dpqa0t0-datasheets-0246.pdf | TO-247-3 | 16 Weeks | yes | 178.5W | NOT SPECIFIED | RJH60F | 3 | NOT SPECIFIED | 178.5W | 90 ns | 600V | 1.82V | 40A | 400V, 30A, 5 Ω, 15V | 1.82V @ 15V, 20A | Trench | 44ns/65ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG7CH50K10EF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-irg7ch50k10ef-datasheets-0249.pdf | Die | 2 | 16 Weeks | EAR99 | YES | UPPER | NO LEAD | 1 | S-XUUC-N2 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 120 ns | 1200V | 35A | 635 ns | 2.2 V | 600V, 35A, 10 Ω, 15V | 30V | 7.5V | 2.2V @ 15V, 25A | Trench Field Stop | 170nC | 50ns/280ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK75B60D1 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | yes | 500W | 500W | 147 ns | 600V | 2.1V | 150A | 400V, 75A, 4 Ω, 15V | 2.1V @ 15V, 75A | 118nC | 290A | 33ns/84ns | 3.7mJ (on), 1.3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4PH40UD2-EP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-irg4ph40ud2ep-datasheets-0255.pdf | 1.2kV | 41A | TO-247-3 | Lead Free | 3 | 14 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 160W | Single | 1 | Insulated Gate BIP Transistors | 46 ns | 26ns | 97 s | SILICON | POWER CONTROL | N-CHANNEL | TO-247AD | 50 ns | 1.2kV | 2.43V | 46 ns | 3.1V | 41A | 1200V | 600 ns | 800V, 21A, 10 Ω, 15V | 20V | 6V | 3.1V @ 15V, 21A | 100nC | 82A | 22ns/100ns | 1.95mJ (on), 1.71mJ (off) | |||||||||||||||||||||||||||||||||||||||||
| IKW30N60TAFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-ikw30n60tfksa1-datasheets-5266.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 3 | yes | EAR99 | AEC-Q101 | 187W | NOT SPECIFIED | *KW30N60 | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 187W | 143 ns | 600V | 50 ns | 600V | 60A | 382 ns | 400V, 30A, 10.6 Ω, 15V | 2.05V @ 15V, 30A | Trench Field Stop | 167nC | 90A | 23ns/254ns | 1.46mJ | ||||||||||||||||||||||||||||||||||||||||||||||
| IXXA30N65C3HV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Surface Mount | -55°C~175°C TJ | 2 | Standard | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | e3 | Matte Tin (Sn) | 230W | 33ns | 650V | 52A | 400V, 24A, 10 Ω, 15V | 2.2V @ 15V, 24A | 37nC | 113A | 33ns/125ns | 500μJ (on), 450μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGP28N60A3M | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | -55°C~150°C TJ | Standard | TO-220-3 Full Pack, Isolated Tab | 26 Weeks | compliant | 64W | 26ns | 600V | 38A | 480V, 24A, 10 Ω, 15V | 1.4V @ 15V, 24A | PT | 66nC | 200A | 18ns/300ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIGC25T60UNX7SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | Die | Die | 600V | 30A | 400V, 30A, 1.8Ohm, 15V | 3.15V @ 15V, 30A | NPT | 90A | 16ns/122ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGA30N60C3D4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/ixys-ixgp30n60c3d4-datasheets-2125.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | 220W | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 220W | 60 ns | 600V | 45 ns | 3V | 60A | 160 ns | 300V, 20A, 5 Ω, 15V | 20V | 5.5V | 3V @ 15V, 20A | PT | 38nC | 150A | 16ns/42ns | 270μJ (on), 90μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| IXGP20N120B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgp20n120b3-datasheets-0192.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | 3 | 26 Weeks | 2.299997g | 3 | yes | LOW CONDUCTION LOSS | unknown | e3 | PURE TIN | 180W | NOT SPECIFIED | IXG*20N120 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 180W | TO-220AB | 1.2kV | 61 ns | 3.1V | 36A | 1200V | 720 ns | 600V, 16A, 15 Ω, 15V | 20V | 5V | 3.1V @ 15V, 16A | PT | 51nC | 80A | 16ns/150ns | 920μJ (on), 560μJ (off) | |||||||||||||||||||||||||||||||||||
| IXXQ30N60B3M | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | 2014 | /files/ixys-ixxq30n60b3m-datasheets-0194.pdf | TO-3P-3 Full Pack | 24 Weeks | compliant | 90W | 36ns | 600V | 33A | 400V, 24A, 10 Ω, 15V | 1.85V @ 15V, 24A | 39nC | 140A | 23ns/150ns | 550μJ (on), 800μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGA180N33ATTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-fga180n33attu-datasheets-0196.pdf | TO-3P-3, SC-65-3 | 3 | 44 Weeks | 6.401g | 3 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | MATTE TIN | 390W | Single | 1 | SILICON | POWER CONTROL | N-CHANNEL | 390W | 27 ns | 330V | 101 ns | 330V | 180A | 362 ns | 1.4V @ 15V, 40A | Trench | 169nC | 450A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH36N60A3D4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh36n60a3d4-datasheets-0203.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 6.500007g | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 220W | NOT SPECIFIED | IXG*36N60 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 3ns | 600V | 43 ns | 600V | 36A | 1000 ns | 400V, 30A, 5 Ω, 15V | 20V | 5.5V | 1.4V @ 15V, 30A | PT | 80nC | 200A | 18ns/330ns | 740μJ (on), 3mJ (off) | |||||||||||||||||||||||||||||||||||||||
| IKW15T120FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikw15t120fksa1-datasheets-0205.pdf | TO-247-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 110W | TO-247AC | 140ns | 85 ns | 1200V | 30A | 720 ns | 600V, 15A, 56 Ω, 15V | 2.2V @ 15V, 15A | NPT, Trench Field Stop | 85nC | 45A | 50ns/520ns | 2.7mJ | |||||||||||||||||||||||||||||||||||||||||||||
| IRG4CC50WC | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/infineontechnologies-irgc15b60kb-datasheets-9711.pdf | Die | Die | 33ns | 600V | 27A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH30N60C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/ixys-ixgp30n60c3-datasheets-1839.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 220W | SINGLE | NOT SPECIFIED | IXG*30N60 | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | 915pF | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 220W | TO-247AD | 600V | 3V | 45 ns | 3V | 60A | 160 ns | 300V, 20A, 5 Ω, 15V | 20V | 5.5V | 3V @ 15V, 20A | PT | 38nC | 150A | 16ns/42ns | 270μJ (on), 90μJ (off) | ||||||||||||||||||||||||||||||||||||||
| IRGB4064DPBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-irgp4640epbf-datasheets-0123.pdf | TO-220-3 | TO-220AB | 101W | 62ns | 600V | 20A | 400V, 10A, 22Ohm, 15V | 1.91V @ 15V, 10A | Trench | 21nC | 40A | 27ns/79ns | 29μJ (on), 200μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYA50N65C3-TRL | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Surface Mount | -55°C~175°C TJ | Standard | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 600W | 36ns | 650V | 132A | 400V, 36A, 5 Ω, 15V | 2.1V @ 15V, 36A | PT | 86nC | 250A | 20ns/90ns | 800μJ (on), 470μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXA33IF1200HB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2001 | /files/ixys-ixa33if1200hb-datasheets-0182.pdf | TO-247-3 | 16.24mm | 21.45mm | 5.3mm | 3 | No SVHC | 3 | yes | EAR99 | LOW CONDUCTION LOSS | e1 | TIN SILVER COPPER | 250W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | POWER CONTROL | N-CHANNEL | TO-247AD | 350ns | 1.2kV | 1.8V | 110 ns | 1.2kV | 58A | 1200V | 350 ns | 600V, 25A, 39 Ω, 15V | 20V | 6.5V | 2.1V @ 15V, 25A | PT | 76nC | 2.5mJ (on), 3mJ (off) |
