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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Voltage | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXGA48N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh48n60b3-datasheets-0313.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | 1.59999g | 3 | yes | LOW CONDUCTION LOSS | unknown | e3 | PURE TIN | 300W | SINGLE | GULL WING | NOT SPECIFIED | IXG*48N60 | 4 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | 600V | 44 ns | 1.8V | 280A | 347 ns | 480V, 30A, 5 Ω, 15V | 20V | 5V | 1.8V @ 15V, 32A | PT | 115nC | 22ns/130ns | 840μJ (on), 660μJ (off) | 200ns | ||||||||||||||||||||||||||||||||
| RGTH00TS65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-rgth00ts65dgc11-datasheets-0357.pdf | TO-247-3 | 3 | 17 Weeks | 38.000013g | Unknown | 3 | yes | EAR99 | 277W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 50A | 277W | 54 ns | 650V | 1.6V | 102 ns | 650V | 85A | 221 ns | 400V, 50A, 10 Ω, 15V | 2.1V @ 15V, 50A | Trench Field Stop | 94nC | 200A | 39ns/143ns | |||||||||||||||||||||||||||||||||||||||||||
| APT50GN60BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt50gn60bg-datasheets-0320.pdf | 600V | 107A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 24 Weeks | 38.000013g | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 366W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 107A | TO-247AD | 600V | 1.5V | 45 ns | 600V | 107A | 400 ns | 400V, 50A, 4.3 Ω, 15V | 30V | 6.5V | 1.85V @ 15V, 50A | Trench Field Stop | 325nC | 150A | 20ns/230ns | 1185μJ (on), 1565μJ (off) | ||||||||||||||||||||||||||||||||
| NGTB50N60SWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/onsemiconductor-ngtb50n60swg-datasheets-0322.pdf | TO-247-3 | Lead Free | 5 Weeks | 3 | ACTIVE, NOT REC (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 376ns | 600V | 2.6V | 100A | 400V, 50A, 10 Ω, 15V | 20V | 6.5V | 2.6V @ 15V, 50A | Trench Field Stop | 135nC | 200A | 70ns/144ns | 600μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt15gp60bg-datasheets-0326.pdf | 600V | 56A | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 250W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 600V | 20 ns | 600V | 56A | 157 ns | 400V, 15A, 5 Ω, 15V | 2.7V @ 15V, 15A | PT | 55nC | 65A | 8ns/29ns | 130μJ (on), 121μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| IRG4PC50FPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4pc50fpbf-datasheets-0327.pdf | 600V | 70A | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | No | 200W | Single | 200W | 1 | Insulated Gate BIP Transistors | 31 ns | 25ns | 240 ns | SILICON | COLLECTOR | N-CHANNEL | TO-247AC | 600V | 1.6V | 52 ns | 1.6V | 70A | 620 ns | 480V, 39A, 5 Ω, 15V | 20V | 6V | 1.6V @ 15V, 39A | 190nC | 280A | 31ns/240ns | 370μJ (on), 2.1mJ (off) | 190ns | |||||||||||||||||||||||||||||||||
| IXGH28N60A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | -55°C~150°C TJ | Tube | Standard | 2016 | /files/ixys-ixga28n60a3-datasheets-2062.pdf | TO-247-3 | 30 Weeks | compliant | 190W | 26ns | 600V | 75A | 480V, 24A, 10 Ω, 15V | 1.4V @ 15V, 24A | PT | 66nC | 170A | 18ns/300ns | 700μJ (on), 2.4mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGP4063PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/infineontechnologies-irgp4063epbf-datasheets-8684.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | 3 | 26 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 330W | Single | 330W | 1 | Insulated Gate BIP Transistors | 55 ns | 165 ns | 30V | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 600V | 1.65V | 100 ns | 2.14V | 96A | 56ns | 210 ns | 400V, 48A, 10 Ω, 15V | 6.5V | 2.14V @ 15V, 48A | Trench | 95nC | 144A | 60ns/145ns | 625μJ (on), 1.28mJ (off) | 46ns | ||||||||||||||||||||||||||||||||||
| NGTD30T120F2SWK | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | Standard | ROHS3 Compliant | /files/onsemiconductor-ngtd30t120f2swk-datasheets-0341.pdf | Die | 4 Weeks | 1200V | 2.4V @ 15V, 40A | Trench Field Stop | 200A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GN60BDQ2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt30gn60bdq2g-datasheets-0343.pdf | 600V | 63A | TO-247-3 | Lead Free | 3 | 25 Weeks | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 203W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 26 ns | 600V | 63A | 255 ns | 400V, 30A, 4.3 Ω, 15V | 30V | 6.5V | 1.9V @ 15V, 30A | Trench Field Stop | 165nC | 90A | 12ns/155ns | 525μJ (on), 700μJ (off) | |||||||||||||||||||||||||||||||||||||||
| IXGQ20N120B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/ixys-ixgq20n120b-datasheets-0306.pdf | TO-3P-3, SC-65-3 | 3 | 5.500006g | 3 | yes | unknown | e3 | PURE TIN | 190W | NOT SPECIFIED | IXG*20N120 | 2 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 190W | 40 ns | 1.2kV | 3.4V | 43 ns | 3.4V | 40A | 1200V | 630 ns | 960V, 20A, 10 Ω, 15V | 20V | 5V | 3.4V @ 15V, 20A | PT | 62nC | 100A | 20ns/270ns | 2.1mJ (off) | |||||||||||||||||||||||||||||||||||
| NGTD28T65F2WP | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Bulk | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-ngtd28t65f2wp-datasheets-0307.pdf | Die | 5 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | 650V | 2V @ 15V, 75A | Trench Field Stop | 200A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXH40N65B4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/ixys-ixxh40n65b4-datasheets-0309.pdf | TO-247-3 | 28 Weeks | 455W | Single | 455W | 650V | 1.5V | 1.8V | 120A | 400V, 40A, 5 Ω, 15V | 1.8V @ 15V, 40A | PT | 77nC | 240A | 28ns/144ns | 1.4mJ (on), 560μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGW50N65F5AXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/infineontechnologies-igw50n65f5axksa1-datasheets-0310.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 3 | yes | EAR99 | Halogen Free | 270W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 270W | 650V | 35 ns | 650V | 80A | 196 ns | 400V, 25A, 12 Ω, 15V | 2.1V @ 15V, 50A | Trench | 108nC | 150A | 21ns/156ns | 490μJ (on), 140μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| IXXH30N65C4D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX4™ | Through Hole | -55°C~175°C TJ | Tube | Standard | /files/ixys-ixxh30n65c4d1-datasheets-0282.pdf | TO-247-3 | 28 Weeks | compliant | 230W | 72ns | 650V | 62A | 400V, 30A, 15 Ω, 15V | 2.5V @ 15V, 30A | 47nC | 136A | 20ns/140ns | 1.1mJ (on), 400μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH48N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgh48n60b3-datasheets-0313.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 30 Weeks | 3 | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 300W | NOT SPECIFIED | IXG*48N60 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | TO-247AD | 600V | 44 ns | 1.8V | 280A | 347 ns | 480V, 30A, 5 Ω, 15V | 20V | 5V | 1.8V @ 15V, 32A | PT | 115nC | 22ns/130ns | 840μJ (on), 660μJ (off) | 200ns | |||||||||||||||||||||||||||||||||
| APT15GT120BRDQ1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt15gt120brdq1g-datasheets-0283.pdf | 1.2kV | 36A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Contains Lead | 3 | 29 Weeks | 38.000013g | yes | HIGH SPEED | No | e1 | TIN SILVER COPPER | 250W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 36A | TO-247AD | 1.2kV | 3.2V | 21 ns | 1.2kV | 36A | 1200V | 137 ns | 800V, 15A, 5 Ω, 15V | 30V | 6.5V | 3.6V @ 15V, 15A | NPT | 105nC | 45A | 10ns/85ns | 585μJ (on), 260μJ (off) | ||||||||||||||||||||||||||||||
| IGW50N65H5AXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/infineontechnologies-igw50n65h5axksa1-datasheets-0315.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 3 | yes | EAR99 | Halogen Free | 270W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 270W | 650V | 33 ns | 650V | 80A | 213 ns | 400V, 25A, 12 Ω, 15V | 2.1V @ 15V, 50A | Trench | 116nC | 150A | 21ns/173ns | 450μJ (on), 160μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| AUIRGP4062D1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirgp4062d1-datasheets-0285.pdf | TO-247-3 | 3 | 217W | Single | TO-247AC | 217W | 102 ns | 600V | 1.77V | 55A | 600V | 55A | 400V, 24A, 10Ohm, 15V | 1.77V @ 15V, 24A | Trench | 77nC | 72A | 19ns/90ns | 532μJ (on), 311μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGZ75N65H5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igz75n65h5xksa1-datasheets-0289.pdf | TO-247-4 | Lead Free | 4 | 16 Weeks | 4 | yes | EAR99 | Halogen Free | 395W | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 395W | 650V | 37 ns | 650V | 119A | 415 ns | 400V, 37.5A, 10 Ω, 15V | 2.1V @ 15V, 75A | Trench | 166nC | 300A | 26ns/347ns | 680μJ (on), 430μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| IKP30N65F5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-ikp30n65f5xksa1-datasheets-0292.pdf | TO-220-3 | Lead Free | 3 | 16 Weeks | 6.000006g | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 188W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 1.35V | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 188W | TO-220AB | 55 ns | 650V | 1.6V | 28 ns | 650V | 55A | 206 ns | 400V, 15A, 23 Ω, 15V | 2.1V @ 15V, 30A | Trench | 65nC | 90A | 19ns/170ns | 280μJ (on), 70μJ (off) | ||||||||||||||||||||||||||||||||||||
| AUIRGP4062D1-E | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirgp4062d1-datasheets-0285.pdf | TO-247-3 | 17 Weeks | 3 | EAR99 | 217W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 217W | 102 ns | 600V | 1.77V | 55A | 41ns | 400V, 24A, 10 Ω, 15V | 20V | 6.5V | 1.77V @ 15V, 24A | Trench | 77nC | 72A | 19ns/90ns | 532μJ (on), 311μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK40B120M1 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 18 Weeks | 600W | 340ns | 1200V | 80A | 600V, 40A, 7.5 Ω, 15V | 2.45V @ 15V, 40A | 140nC | 120A | 90ns/226ns | 3.87mJ (on), 1.25mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH30N120IH | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | IXG*30N120 | TO-247AD (IXGH) | 1.2kV | 50A | 1200V | 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGTD120T25S1PT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 22 Weeks | not_compliant | e3 | Matte Tin (Sn) | 348W | 100ns | 1200V | 50A | 600V, 25A, 23 Ω, 15V | 2.4V @ 15V, 25A | Field Stop | 204nC | 100A | 73ns/269ns | 1.44mJ (on), 550μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH10N100 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | TO-247-3 | 3 | 100W | SINGLE | IXG*10N100 | 150°C | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 100W | TO-247AD | 1kV | 300 ns | 3.5V | 20A | 1000V | 1850 ns | 20V | 5V | 3.5V @ 15V, 10A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH12N100 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixgh12n100-datasheets-0304.pdf | TO-247-3 | Lead Free | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 100W | SINGLE | NOT SPECIFIED | IXG*12N100 | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 100W | TO-247AD | 1kV | 300 ns | 3.5V | 24A | 1000V | 2150 ns | 800V, 12A, 120 Ω, 15V | 20V | 5.5V | 3.5V @ 15V, 12A | 65nC | 48A | 100ns/850ns | 2.5mJ (off) | |||||||||||||||||||||||||||||||||||||
| IXGQ28N120B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/ixys-ixgq28n120b-datasheets-0305.pdf | TO-3P-3, SC-65-3 | 3 | 8 Weeks | 5.500006g | 3 | yes | e3 | Matte Tin (Sn) | 250W | NOT SPECIFIED | IXG*28N120 | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 250W | 40 ns | 1.2kV | 63 ns | 1.2kV | 50A | 1200V | 550 ns | 960V, 28A, 5 Ω, 15V | 3.5V @ 15V, 28A | 92nC | 150A | 30ns/180ns | 2mJ (off) | ||||||||||||||||||||||||||||||||||||||||
| AOK75B60D1 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | yes | 500W | 500W | 147 ns | 600V | 2.1V | 150A | 400V, 75A, 4 Ω, 15V | 2.1V @ 15V, 75A | 118nC | 290A | 33ns/84ns | 3.7mJ (on), 1.3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4PH40UD2-EP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-irg4ph40ud2ep-datasheets-0255.pdf | 1.2kV | 41A | TO-247-3 | Lead Free | 3 | 14 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 160W | Single | 1 | Insulated Gate BIP Transistors | 46 ns | 26ns | 97 s | SILICON | POWER CONTROL | N-CHANNEL | TO-247AD | 50 ns | 1.2kV | 2.43V | 46 ns | 3.1V | 41A | 1200V | 600 ns | 800V, 21A, 10 Ω, 15V | 20V | 6V | 3.1V @ 15V, 21A | 100nC | 82A | 22ns/100ns | 1.95mJ (on), 1.71mJ (off) |
