Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Part Status Series Mount Mounting Type Operating Temperature Packaging Moisture Sensitivity Level (MSL) Termination Max Operating Temperature Min Operating Temperature Technology Operating Mode RoHS Status Published Datasheet Package / Case Lead Free Number of Terminations Factory Lead Time REACH SVHC Number of Pins Pbfree Code ECCN Code Additional Feature Radiation Hardening Reach Compliance Code JESD-609 Code Terminal Finish Halogen Free Surface Mount Terminal Position Terminal Form Peak Reflow Temperature (Cel) Pin Count Operating Temperature (Max) Element Configuration Time@Peak Reflow Temperature-Max (s) Power Dissipation Number of Elements Subcategory Qualification Status JESD-30 Code Supplier Device Package Turn On Delay Time Rise Time Fall Time (Typ) Turn-Off Delay Time Continuous Drain Current (ID) Gate to Source Voltage (Vgs) Max Dual Supply Voltage Dual Supply Voltage Transistor Element Material Configuration Case Connection Transistor Application Polarity/Channel Type Power Dissipation-Max (Abs) Drain to Source Voltage (Vdss) DS Breakdown Voltage-Min FET Technology Threshold Voltage Power Dissipation-Max JEDEC-95 Code Drain Current-Max (Abs) (ID) Pulsed Drain Current-Max (IDM) Drain-source On Resistance-Max Feedback Cap-Max (Crss) Avalanche Energy Rating (Eas) Drain to Source Breakdown Voltage FET Type Input Capacitance (Ciss) (Max) @ Vds Turn Off Time-Max (toff) Turn On Time-Max (ton) Nominal Vgs Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
2SJ668(TE16L1,NQ) 2SJ668(TE16L1,NQ) Toshiba Semiconductor and Storage $0.66
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