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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 2SJ438(CANO,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sj438mdkqm-datasheets-2869.pdf | TO-220-3 Full Pack | TO-220NIS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2989(T6CANO,A,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2989fj-datasheets-2887.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ438(AISIN,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sj438mdkqm-datasheets-2869.pdf | TO-220-3 Full Pack | TO-220NIS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP02N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp02n60c3hksa1-datasheets-6298.pdf | 650V | 1.8A | TO-220 | Contains Lead | No SVHC | 3 | Halogen Free | 25W | Single | 25W | 1 | 200pF | 6 ns | 3ns | 12 ns | 68 ns | 1.8A | 20V | 600V | 600V | 3V | 3Ohm | 600V | 3 V | 3 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR774DP-T1-GE3 | Vishay Siliconix | $6.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir774dpt1ge3-datasheets-2880.pdf | 5 | EAR99 | YES | 62.5W | DUAL | C BEND | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 62.5W | 1 | FET General Purpose Power | R-XDSO-C5 | 10ns | 10 ns | 33 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 80A | 2.1mOhm | 45 mJ | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7448L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7416_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | 8-PowerVDFN | 30V | 3.1W Ta 25W Tc | N-Channel | 1900pF @ 15V | 8.5m Ω @ 20A, 10V | 1.7V @ 250μA | 14A Ta 40A Tc | 32nC @ 10V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD2908_002 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | TO-252-3, DPak (2 Leads + Tab), SC-63 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ438,Q(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sj438mdkqm-datasheets-2869.pdf | TO-220-3 Full Pack | TO-220NIS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7202_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aon7202-datasheets-0729.pdf | 8-PowerVDFN | 30V | 3.1W Ta 36W Tc | N-Channel | 2200pF @ 15V | 5m Ω @ 20A, 10V | 2.3V @ 250μA | 20A Ta 40A Tc | 33nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP03N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa03n60c3xksa1-datasheets-2195.pdf | 8 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP06N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp06n60c3hksa1-datasheets-1867.pdf | 2 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7194TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh7194trpbf-datasheets-2654.pdf | 8-PowerTDFN | Lead Free | 5 | 17mOhm | 8 | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-N5 | 35A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.6W Ta 39W Tc | 11A | 140A | 220 mJ | N-Channel | 733pF @ 50V | 16.4m Ω @ 21A, 10V | 3.6V @ 50μA | 11A Ta 35A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSR606NH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsr606nh6327xtsa1-datasheets-2729.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 12 Weeks | No SVHC | 59 | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 500mW | 1 | 2.3A | 20V | 60V | 1.8V | 500mW Ta | N-Channel | 657pF @ 25V | 60m Ω @ 2.3A, 10V | 2.3V @ 15μA | 2.3A Ta | 5.6nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP07N65C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2008 | /files/infineontechnologies-spi07n65c3hksa1-datasheets-1625.pdf | 650V | 7.3A | TO-220 | 10.36mm | 15.95mm | 4.57mm | Lead Free | 3 | Halogen Free | 83W | Single | 83W | 1 | 790pF | 6 ns | 3.5ns | 7 ns | 60 ns | 7.3A | 20V | 650V | 650V | 600mOhm | 650V | 600 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP20N60S5HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp20n60s5-datasheets-5194.pdf | TO-220-3 | 3 | AVALANCHE RATED | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 208W | 1 | R-PSFM-T3 | 120 ns | 25ns | 30 ns | 140 ns | 20A | 20V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 40A | 190mOhm | 690 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO7413_030 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | SC-70, SOT-323 | 20V | 350mW Ta | P-Channel | 400pF @ 10V | 113m Ω @ 1.4A, 10V | 1.2V @ 250μA | 1.4A Ta | 4.5nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7400B_101 | Alpha & Omega Semiconductor Inc. | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2013 | 8-PowerVDFN | 30V | 4.1W Ta 24W Tc | N-Channel | 1440pF @ 15V | 7.5m Ω @ 18A, 10V | 2.5V @ 250μA | 18A Ta 40A Tc | 26nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R399CPBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd50r399cp-datasheets-4065.pdf | 2 | yes | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 150°C | 40 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 500V | METAL-OXIDE SEMICONDUCTOR | TO-252AA | 9A | 20A | 0.399Ohm | 215 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP07N60S5HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp07n60s5xksa1-datasheets-3550.pdf | 3 | yes | EAR99 | AVALANCHE RATED | compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 83W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 7.3A | 14.6A | 0.6Ohm | 230 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFC4468D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ438,MDKQ(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sj438mdkqm-datasheets-2869.pdf | TO-220-3 Full Pack | TO-220NIS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFT1452-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-sft1452tlh-datasheets-2633.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | yes | EAR99 | e6 | Tin/Bismuth (Sn/Bi) | NO | 3 | FET General Purpose Power | 53A | Single | 250V | 1W Ta 26W Tc | 3A | N-Channel | 210pF @ 20V | 2.4 Ω @ 1.5A, 10V | 4.5V @ 1mA | 3A Ta | 4.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD4136L | Alpha & Omega Semiconductor Inc. | $4.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2008 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 25V | 2.1W Ta 30W Tc | N-Channel | 734pF @ 12.5V | 11m Ω @ 20A, 10V | 2.5V @ 250μA | 25A Tc | 16.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA444DJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sia444djtt1ge3-datasheets-2722.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 15 Weeks | Unknown | 6 | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | FET General Purpose Power | S-PDSO-N3 | 12 ns | 12ns | 10 ns | 15 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1V | 3.5W Ta 19W Tc | 40A | N-Channel | 560pF @ 15V | 17m Ω @ 7.4A, 10V | 2.2V @ 250μA | 12A Tc | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPD65R600C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd65r600c6btma1-datasheets-9801.pdf | 2 | 12 Weeks | yes | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | -55°C | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 650V | METAL-OXIDE SEMICONDUCTOR | TO-252 | 18A | 0.6Ohm | 142 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6970_002 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 2016 | 8-PowerWDFN | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI50R140CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi50r140cp-datasheets-4307.pdf | EAR99 | compliant | NOT SPECIFIED | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R520CPBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd50r520cp-datasheets-4138.pdf | 2 | yes | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 500V | METAL-OXIDE SEMICONDUCTOR | TO-252AA | 7.1A | 15A | 0.52Ohm | 166 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS70R600CEAKMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | ENHANCEMENT MODE | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips70r600ceakma1-datasheets-1364.pdf | 3 | yes | EAR99 | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 700V | METAL-OXIDE SEMICONDUCTOR | TO-251 | 18A | 0.6Ohm | 55 mJ |
