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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDP86363-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp86363f085-datasheets-7641.pdf | TO-220-3 | 3 | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 300W Tc | TO-220AB | 110A | 0.0028Ohm | 512 mJ | N-Channel | 10000pF @ 40V | 2.8m Ω @ 80A, 10V | 4V @ 250μA | 110A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| GP1M008A025FG | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/semiq-gp1m008a025hg-datasheets-7639.pdf | TO-220-3 Full Pack | TO-220F | 250V | 17.3W Tc | N-Channel | 423pF @ 25V | 600mOhm @ 4A, 10V | 5V @ 250μA | 8A Tc | 8.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP1M009A060FH | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/semiq-gp1m009a060fh-datasheets-7649.pdf | TO-220-3 Full Pack | TO-220F | 600V | 51.4W Tc | N-Channel | 1440pF @ 25V | 1Ohm @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 27nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7734-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfs7734trl7pp-datasheets-6159.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.54mm | 4.83mm | 9.65mm | Lead Free | 16 Weeks | 1.59999g | 7 | EAR99 | 1 | Single | 294W | 17 ns | 85ns | 75 ns | 123 ns | 197A | 20V | 75V | 294W Tc | N-Channel | 10130pF @ 25V | 3.05m Ω @ 100A, 10V | 3.7V @ 150μA | 197A Tc | 270nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AOT20C60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aot430-datasheets-0079.pdf | TO-220-3 | 16 Weeks | FET General Purpose Power | 20A | Single | 600V | 463W Tc | N-Channel | 3440pF @ 100V | 250m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7787PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfsl7787pbf-datasheets-8283.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 3.949996g | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 125W | 11 ns | 48ns | 39 ns | 51 ns | 76A | 20V | 75V | 125W Tc | N-Channel | 4020pF @ 25V | 8.4m Ω @ 46A, 10V | 3.7V @ 100μA | 76A Tc | 109nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| GP1M010A080N | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/semiq-gp1m010a080n-datasheets-7618.pdf | TO-3P-3, SC-65-3 | TO-3PN | 900V | 312W Tc | N-Channel | 2336pF @ 25V | 1.05Ohm @ 5A, 10V | 4V @ 250μA | 10A Tc | 53nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP1M006A065CH | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/semiq-gp1m006a065ch-datasheets-7623.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 650V | 120W Tc | N-Channel | 1177pF @ 25V | 1.6Ohm @ 2.75A, 10V | 4V @ 250μA | 5.5A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR7746PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfr7746trpbf-datasheets-9480.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 3.949996g | No SVHC | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 7.9 ns | 30ns | 21 ns | 34 ns | 56A | 20V | 75V | 3.7V | 99W Tc | N-Channel | 3107pF @ 25V | 11.2m Ω @ 35A, 10V | 3.7V @ 100μA | 56A Tc | 89nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NVB6412ANT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntp6412ang-datasheets-3391.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 25 Weeks | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | YES | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 167W | 1 | FET General Purpose Power | R-PSSO-G2 | 58A | 20V | SILICON | DRAIN | 100V | 167W Tc | 240A | N-Channel | 3500pF @ 25V | 18.2m Ω @ 58A, 10V | 4V @ 250μA | 58A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPD80R2K8CEBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu80r2k8cebkma1-datasheets-7230.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3.949996g | yes | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 42W | 1 | R-PSSO-G2 | 25 ns | 15ns | 18 ns | 72 ns | 1.9A | 20V | 800V | SILICON | SWITCHING | 42W Tc | 6A | 90 mJ | 800V | N-Channel | 290pF @ 100V | 2.8 Ω @ 1.1A, 10V | 3.9V @ 120μA | 1.9A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AON2707 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aon2707-datasheets-3686.pdf | 6-WDFN Exposed Pad | 4A | 30V | 2.8W Ta | P-Channel | 305pF @ 15V | 117m Ω @ 4A, 10V | 1.5V @ 250μA | 4A Ta | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6266 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-PowerSMD, Flat Leads | 16 Weeks | 8-DFN (5x6) | 1.34nF | 30A | 60V | 5W Ta 38W Tc | N-Channel | 1340pF @ 30V | 15mOhm @ 20A, 10V | 2.5V @ 250μA | 13A Ta 30A Tc | 30nC @ 10V | 15 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP1M010A060FH | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/semiq-gp1m010a060fh-datasheets-7630.pdf | TO-220-3 Full Pack | TO-220F | 600V | 52W Tc | N-Channel | 1891pF @ 25V | 750mOhm @ 5A, 10V | 4V @ 250μA | 10A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH4209DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerTDFN | 1.1Ohm | 8 | EAR99 | unknown | 260A | 25V | 3.5W Ta 125W Tc | N-Channel | 4620pF @ 13V | 1.1m Ω @ 50A, 10V | 2.1V @ 100μA | 44A Ta 260A Tc | 74nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT40SM120B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt40sm120s-datasheets-7558.pdf | TO-247-3 | 25.96mm | Lead Free | 3 | 22 Weeks | OBSOLETE (Last Updated: 2 weeks ago) | EAR99 | TO-247 (B) | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 273W | 1 | 175°C | R-PSFM-T3 | 10 ns | 32 ns | 41A | 25V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1.7V | 273W Tc | 2500 mJ | 1.2kV | N-Channel | 2560pF @ 1000V | 100m Ω @ 20A, 20V | 3V @ 1mA (Typ) | 41A Tc | 130nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||
| GP1M008A025CG | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/semiq-gp1m008a025cg-datasheets-7588.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 250V | 52W Tc | N-Channel | 423pF @ 25V | 600mOhm @ 4A, 10V | 5V @ 250μA | 8A Tc | 8.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP1M006A070F | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/semiq-gp1m006a070f-datasheets-7589.pdf | TO-220-3 Full Pack | TO-220F | 700V | 39W Tc | N-Channel | 1500pF @ 25V | 1.65Ohm @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 23nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP1M005A050FH | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/semiq-gp1m005a050fh-datasheets-7590.pdf | TO-220-3 Full Pack | TO-220F | 500V | 32W Tc | N-Channel | 627pF @ 25V | 1.65Ohm @ 2.25A, 10V | 4V @ 250μA | 4.5A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD80R1K4CEBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd80r1k4cebtma1-datasheets-7317.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3.949996g | 3 | yes | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 63W | 1 | R-PSSO-G2 | 25 ns | 15ns | 12 ns | 72 ns | 3.9A | 20V | 800V | SILICON | SWITCHING | 63W Tc | N-Channel | 570pF @ 100V | 1.4 Ω @ 2.3A, 10V | 3.9V @ 240μA | 3.9A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| GP1M004A090H | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/semiq-gp1m004a090h-datasheets-7597.pdf | TO-220-3 | TO-220 | 900V | 123W Tc | N-Channel | 955pF @ 25V | 4Ohm @ 2A, 10V | 4V @ 250μA | 4A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RAQ045P01TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 26 Weeks | yes | EAR99 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | DUAL | GULL WING | 260 | 6 | 10 | 1 | Other Transistors | R-PDSO-G6 | 4.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 600mW Ta | 18A | 0.03Ohm | P-Channel | 4200pF @ 6V | 30m Ω @ 4.5A, 4.5V | 1V @ 1mA | 4.5A Ta | 40nC @ 4.5V | 1.5V 4.5V | -8V | |||||||||||||||||||||||||||||||||||||||||
| GP1M005A050H | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/semiq-gp1m005a050fh-datasheets-7590.pdf | TO-220-3 | TO-220 | 500V | 92.5W Tc | N-Channel | 627pF @ 25V | 1.65Ohm @ 2.25A, 10V | 4V @ 250μA | 4.5A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7734PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfs7734trlpbf-datasheets-6080.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 17 Weeks | 3.949996g | 3 | EAR99 | 1 | Single | 20 ns | 123ns | 100 ns | 124 ns | 183A | 20V | 75V | 290W Tc | N-Channel | 10150pF @ 25V | 3.5m Ω @ 100A, 10V | 3.7V @ 250μA | 183A Tc | 270nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| CPH6442-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/onsemiconductor-cph6442tle-datasheets-7380.pdf | SOT-23-6 Thin, TSOT-23-6 | 2.9mm | 900μm | 1.6mm | Lead Free | 43MOhm | 6 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | e6 | Tin/Bismuth (Sn/Bi) | YES | 6 | Single | 1.6W | FET General Purpose Powers | 12 ns | 18ns | 35 ns | 80 ns | 6A | 20V | 1.6W Ta | 6A | 60V | N-Channel | 1040pF @ 20V | 43m Ω @ 3A, 10V | 2.6V @ 1mA | 6A Ta | 20nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| APT40SM120S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt40sm120s-datasheets-7558.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 22 Weeks | OBSOLETE (Last Updated: 1 month ago) | EAR99 | 41A | 1200V | 273W Tc | N-Channel | 2560pF @ 1000V | 100m Ω @ 20A, 20V | 3V @ 1mA (Typ) | 41A Tc | 130nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-FA38SA50LCP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsfa38sa50lcp-datasheets-7560.pdf | SOT-227-4, miniBLOC | 4 | 30.000004g | Unknown | 4 | EAR99 | AVALANCHE RATED, UL APPROVED | No | UPPER | UNSPECIFIED | 1 | 1 | 42 ns | 340ns | 330 ns | 200 ns | 38A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 4V | 500W Tc | 580 mJ | N-Channel | 6900pF @ 25V | 130m Ω @ 23A, 10V | 4V @ 250μA | 38A Tc | 420nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| DMP3017SFK-7 | Diodes Incorporated | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp3017sfk7-datasheets-7451.pdf | 6-PowerUDFN | 2.207nF | 6 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 7.35 ns | 16.4ns | 37.5 ns | 67.2 ns | 10.4A | 25V | 30V | 1W Ta | P-Channel | 4414pF @ 15V | 14m Ω @ 9.5A, 10V | 3V @ 250μA | 10.4A Ta | 90nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4321-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs4321trl7pp-datasheets-1402.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Lead Free | 6 | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G6 | 86A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 350W Tc | 343A | 0.0147Ohm | 120 mJ | N-Channel | 4460pF @ 50V | 14.7m Ω @ 34A, 10V | 5V @ 250μA | 86A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD80R1K0CEBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd80r1k0ceatma1-datasheets-3432.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3.949996g | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 83W | 1 | R-PSSO-G2 | 25 ns | 15ns | 8 ns | 72 ns | 5.7A | 20V | 800V | SILICON | SWITCHING | 83W Tc | 0.95Ohm | N-Channel | 785pF @ 100V | 950m Ω @ 3.6A, 10V | 3.9V @ 250μA | 5.7A Tc | 31nC @ 10V | 10V | ±20V |
