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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPD80R1K0CEBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd80r1k0ceatma1-datasheets-3432.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3.949996g | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 83W | 1 | R-PSSO-G2 | 25 ns | 15ns | 8 ns | 72 ns | 5.7A | 20V | 800V | SILICON | SWITCHING | 83W Tc | 0.95Ohm | N-Channel | 785pF @ 100V | 950m Ω @ 3.6A, 10V | 3.9V @ 250μA | 5.7A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NVB5860NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/onsemiconductor-nvb5860nlt4g-datasheets-7484.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.29mm | 4.83mm | 9.65mm | Lead Free | 2 | 25 Weeks | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | YES | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 283W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 98 ns | 220A | 20V | SILICON | DRAIN | SWITCHING | 283W Tc | 660A | 60V | N-Channel | 13216pF @ 25V | 3m Ω @ 20A, 10V | 3V @ 250μA | 220A Ta | 220nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFS7730-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfs7730trl7pp-datasheets-6584.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.67mm | 5.084mm | 9.65mm | Lead Free | 16 Weeks | 1.59999g | No SVHC | 7 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 375W | 175°C | 20 ns | 90ns | 91 ns | 182 ns | 240A | 20V | 2.1V | 375W Tc | 75V | N-Channel | 13970pF @ 25V | 2m Ω @ 100A, 10V | 3.7V @ 250μA | 240A Tc | 428nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| GP1M003A050CG | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/semiq-gp1m003a050cg-datasheets-7503.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 500V | 52W Tc | N-Channel | 395pF @ 25V | 2.8Ohm @ 1.25A, 10V | 4V @ 250μA | 2.5A Tc | 9.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU80R1K4CEBKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineon-ipu80r1k4cebkma1-datasheets-3653.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 343.085929mg | 3 | Not Halogen Free | 1 | Single | PG-TO251-3 | 570pF | 25 ns | 15ns | 12 ns | 72 ns | 3.9A | 30V | 800V | 800V | 63W Tc | 1.4Ohm | N-Channel | 570pF @ 100V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240μA | 3.9A Tc | 23nC @ 10V | 1.4 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| WPB4001-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-wpb40011e-datasheets-7511.pdf | TO-3P-3, SC-65-3 | Lead Free | 6.961991g | 3 | yes | EAR99 | No | e3 | Tin (Sn) | 3 | 44 ns | 156ns | 94 ns | 224 ns | 26A | 30V | 2.5W Ta 220W Tc | 500V | N-Channel | 2250pF @ 30V | 260m Ω @ 13A, 10V | 26A Ta | 87nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7730PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfb7730pbf-datasheets-3733.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 17 Weeks | 3.949996g | No SVHC | 3 | EAR99 | 1 | Single | 375W | 21 ns | 120ns | 115 ns | 180 ns | 195A | 20V | 75V | 375W Tc | N-Channel | 13660pF @ 25V | 2.6m Ω @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 407nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| GP1M003A040CG | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/semiq-gp1m003a040cg-datasheets-7525.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 400V | 30W Tc | N-Channel | 210pF @ 25V | 3.4Ohm @ 1A, 10V | 4V @ 250μA | 2A Tc | 3.7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-FB180SA10P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsfb180sa10p-datasheets-7535.pdf | SOT-227-4, miniBLOC | SOT-227 | 100V | 480W Tc | N-Channel | 10700pF @ 25V | 6.5mOhm @ 180A, 10V | 4V @ 250μA | 180A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRL3705ZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirl3705z-datasheets-8586.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 130W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 240ns | 83 ns | 26 ns | 75A | 16V | SILICON | DRAIN | SWITCHING | 130W Tc | 0.008Ohm | 55V | N-Channel | 2880pF @ 25V | 8m Ω @ 52A, 10V | 3V @ 250μA | 75A Tc | 60nC @ 5V | |||||||||||||||||||||||||||||||||||||||||
| AOB12T60PL | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 250W Tc | 48A | 0.52Ohm | 750 mJ | N-Channel | 2028pF @ 100V | 520m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR7740PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr7740trpbf-datasheets-4261.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 19 Weeks | 3.949996g | No SVHC | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 140W | 10 ns | 36ns | 30 ns | 55 ns | 87A | 20V | 75V | 3.7V | 140W Tc | N-Channel | 4430pF @ 25V | 7.2m Ω @ 52A, 10V | 3.7V @ 100μA | 87A Tc | 126nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AOB10T60PL | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 1.595nF | 10A | 600V | 208W Tc | N-Channel | 1595pF @ 100V | 700mOhm @ 5A, 10V | 5V @ 250μA | 10A Tc | 40nC @ 10V | 700 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR7546PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfr7546trpbf-datasheets-1026.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 19 Weeks | 3.949996g | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 99W | 8.1 ns | 28ns | 20 ns | 36 ns | 56A | 20V | 60V | 99W Tc | N-Channel | 3020pF @ 25V | 7.9m Ω @ 43A, 10V | 3.7V @ 100μA | 56A Tc | 87nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7430-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfs7430trl7pp-datasheets-2401.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 4.83mm | 9.65mm | Lead Free | 14 Weeks | 1.59999g | 7 | EAR99 | 1 | Single | 375W | 28 ns | 79ns | 93 ns | 161 ns | 240A | 20V | 40V | 375W Tc | N-Channel | 13975pF @ 25V | 0.75m Ω @ 100A, 10V | 3.9V @ 250μA | 240A Tc | 460nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF12T60P | Alpha & Omega Semiconductor Inc. | $2.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | TO-220-3 Full Pack | 3 | 16 Weeks | yes | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 50W Tc | TO-220AB | 48A | 0.52Ohm | 750 mJ | N-Channel | 2028pF @ 100V | 520m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7430PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfs7430trlpbf-datasheets-6167.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 3.949996g | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 1 | Single | 30 | 375W | FET General Purpose Power | 32 ns | 105ns | 100 ns | 160 ns | 195A | 20V | 40V | 3.9V | 375W Tc | N-Channel | 14240pF @ 25V | 1.2m Ω @ 100A, 10V | 3.9V @ 250μA | 195A Tc | 460nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AOB20C60L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | FET General Purpose Power | 20A | Single | 600V | 463W Tc | N-Channel | 3440pF @ 100V | 250m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 74nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4455 | Alpha & Omega Semiconductor Inc. | $0.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-ao4455-datasheets-3621.pdf | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | Other Transistors | Single | 30V | 3.1W Ta | 17A | P-Channel | 3400pF @ 15V | 6.2m Ω @ 15A, 20V | 2.6V @ 250μA | 76nC @ 10V | 6V 20V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT11C60L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aot430-datasheets-0079.pdf | TO-220-3 | 16 Weeks | FET General Purpose Power | 11A | Single | 600V | 278W Tc | N-Channel | 2000pF @ 100V | 400m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 42nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7936TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfh7936tr2pbf-datasheets-8369.pdf | 8-PowerTDFN | 5.2324mm | 1.1684mm | 6.1468mm | Lead Free | 16 Weeks | No SVHC | 8 | EAR99 | No | 3.1W | FET General Purpose Power | 17 ns | 12ns | 7 ns | 19 ns | 54A | 20V | Single | 3.1W Ta | 76A | 30V | N-Channel | 2360pF @ 15V | 4.8m Ω @ 20A, 10V | 2.35V @ 50μA | 20A Ta 54A Tc | 26nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFH4226TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | /files/infineon-irfh4226trpbf-datasheets-3626.pdf | 8-PowerTDFN | Lead Free | 8 | EAR99 | NOT SPECIFIED | IRFH4226 | 1 | NOT SPECIFIED | 3.4W | 11 ns | 35ns | 8.1 ns | 14 ns | 30A | 20V | 25V | 3.4W Ta 46W Tc | N-Channel | 2000pF @ 13V | 2.4m Ω @ 30A, 10V | 2.1V @ 50μA | 30A Ta 70A Tc | 32nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF7T60P | Alpha & Omega Semiconductor Inc. | $3.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aotf7t60pl-datasheets-2991.pdf | TO-220-3 Full Pack | 16 Weeks | TO-220-3F | 965pF | 7A | 600V | 38W Tc | N-Channel | 965pF @ 100V | 1.1Ohm @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 25nC @ 10V | 1.1 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4965NFTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerWDFN | 23 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | 1.47W | 150°C | FET General Purpose Powers | 64A | Single | 30V | N-Channel | 2075pF @ 15V | 3.5m Ω @ 20A, 10V | 2.3V @ 250μA | 16.3A Ta 64A Tc | 29.4nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5885NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfs5885nlt1g-datasheets-3979.pdf | 8-PowerTDFN | Lead Free | 38 Weeks | 5 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 5 | 1 | Single | FET General Purpose Power | 10 ns | 64ns | 52 ns | 18 ns | 39A | 20V | 3.7W Ta 54W Tc | 60V | N-Channel | 1340pF @ 25V | 15m Ω @ 15A, 10V | 2.5V @ 250μA | 10.2A Ta | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SCH1331-S-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | SOT-563, SOT-666 | 1W | -3A | 84mOhm | -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5834NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5834nlwft1g-datasheets-1921.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | 5 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | NOT SPECIFIED | 5 | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 10 ns | 56.4ns | 6.6 ns | 17.4 ns | 75A | 20V | SILICON | DRAIN | 3.6W Ta 107W Tc | 276A | 48 mJ | 40V | N-Channel | 1231pF @ 20V | 9.3m Ω @ 20A, 10V | 3V @ 250μA | 14A Ta 75A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| DMP2038USS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmp2038uss13-datasheets-7275.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.496nF | 8 | 73.992255mg | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 13.7 ns | 14ns | 35.5 ns | 79.1 ns | 6.5A | 8V | SILICON | SWITCHING | 20V | 20V | 2.5W Ta | 25A | 26 mJ | P-Channel | 1496pF @ 15V | 38m Ω @ 5A, 4.5V | 1.1V @ 250μA | 6.5A Ta | 14.4nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| NVTFS5811NLWFTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvtfs5811nltag-datasheets-2630.pdf | 8-PowerWDFN | Lead Free | 23 Weeks | 8 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 8 | 1 | FET General Purpose Power | 11 ns | 55ns | 40 ns | 20 ns | 40A | 20V | Single | 3.2W Ta 21W Tc | 40V | N-Channel | 1570pF @ 25V | 6.7m Ω @ 20A, 10V | 2.2V @ 250μA | 16A Ta | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NVB5860NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/onsemiconductor-ntp5860ng-datasheets-3459.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.29mm | 4.83mm | 9.65mm | Lead Free | 2 | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | AEC-Q101 | YES | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | 27 ns | 66 ns | 220A | 20V | SILICON | DRAIN | 60V | 60V | 283W Tc | 660A | N-Channel | 10760pF @ 25V | 3m Ω @ 75A, 10V | 4V @ 250μA | 220A Tc | 180nC @ 10V | 10V | ±20V |
