Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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DMP3035LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmp3035lss13-datasheets-9694.pdf&product=diodesincorporated-dmp3035lss13-6865412 | 8-SOIC (0.154, 3.90mm Width) | 5.3mm | 1.5mm | 4.1mm | Lead Free | 8 | 7 Weeks | 850.995985mg | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | 40 | 1 | Other Transistors | 5.1 ns | 8ns | 30 ns | 46 ns | 11A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 2W Ta | 40A | -30V | P-Channel | 1655pF @ 20V | 16m Ω @ 8A, 10V | 2V @ 250μA | 11A Ta | 30.7nC @ 10V | 4.5V 20V | ±25V | |||||||||||||||||||||||||||||||||||
DMN5L06W-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn5l06w7-datasheets-9474.pdf | SC-70, SOT-323 | 2.2mm | 1mm | 1.35mm | 3 | 6.010099mg | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 280mA | 20V | SILICON | SWITCHING | 200mW Ta | 0.28A | 3Ohm | 5 pF | 50V | N-Channel | 50pF @ 25V | 3 Ω @ 200mA, 2.7V | 1.2V @ 250μA | 280mA Ta | 1.8V 2.7V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
DMP3100L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp3100l7-datasheets-9476.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | 3 | 1.437803g | 3 | EAR99 | LOW THRESHOLD, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1.08W | 1 | Other Transistors | 2.7A | 20V | SILICON | SWITCHING | 30V | 1.08W Ta | 8A | P-Channel | 227pF @ 10V | 100m Ω @ 2.7A, 10V | 2.1V @ 250μA | 2.7A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRF6604TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-943250-datasheets-5296.pdf | DirectFET™ Isometric MQ | 5.05mm | Lead Free | No SVHC | 11.5mOhm | 7 | No | 2.3W | 1 | DIRECTFET™ MQ | 2.27nF | 18 ns | 12A | 12V | 30V | 30V | 2.1V | 2.3W Ta 42W Tc | 31 ns | 11.5Ohm | 30V | N-Channel | 2270pF @ 15V | 2.1 V | 11.5mOhm @ 12A, 7V | 2.1V @ 250μA | 12A Ta 49A Tc | 26nC @ 4.5V | 11.5 mΩ | 4.5V 7V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
IRF6710S2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | DirectFET™ Isometric S1 | 4.826mm | 558.8μm | 3.95mm | 2 | 15 Weeks | 6 | EAR99 | No | BOTTOM | 15W | 1 | FET General Purpose Power | R-XBCC-N2 | 7.9 ns | 20ns | 6 ns | 5.2 ns | 12mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8W Ta 15W Tc | 0.0059Ohm | 24 mJ | 25V | N-Channel | 1190pF @ 13V | 5.9m Ω @ 12A, 10V | 2.4V @ 25μA | 12A Ta 37A Tc | 13nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRF7749L2TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7749l2trpbf-datasheets-7314.pdf | DirectFET™ Isometric L8 | 9.144mm | 508μm | 7.1mm | Lead Free | No SVHC | 1.5MOhm | 8 | No | Single | 125W | 1 | DIRECTFET L8 | 12.32nF | 17 ns | 43ns | 39 ns | 78 ns | 33A | 20V | 60V | 2.9V | 3.3W Ta 125W Tc | 68 ns | 1.1mOhm | 60V | N-Channel | 12320pF @ 25V | 2.9 V | 1.5mOhm @ 120A, 10V | 4V @ 250μA | 33A Ta 375A Tc | 300nC @ 10V | 1.5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRFR3418TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 80V | 3.8W Ta 140W Tc | N-Channel | 3510pF @ 25V | 14mOhm @ 18A, 10V | 5.5V @ 250μA | 70A Tc | 94nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTD4905N-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4905nt4g-datasheets-9331.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 4 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | 67A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.4W Ta 44W Tc | 12A | 0.007Ohm | 61 mJ | N-Channel | 2340pF @ 15V | 4.5m Ω @ 30A, 10V | 2.2V @ 250μA | 12A Ta 67A Tc | 33nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRLR3717TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr3717trrpbf-datasheets-9384.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 89W Tc | TO-252AA | 30A | 460A | 0.004Ohm | 460 mJ | N-Channel | 2830pF @ 10V | 4m Ω @ 15A, 10V | 2.45V @ 250μA | 120A Tc | 31nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRFS3507TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs3507trlpbf-datasheets-9533.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 75V | 190W Tc | N-Channel | 3540pF @ 50V | 8.8m Ω @ 58A, 10V | 4V @ 100μA | 97A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7521D1TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7521d1trpbf-datasheets-9536.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 20V | 1.3W Ta | N-Channel | 260pF @ 15V | 135m Ω @ 1.7A, 4.5V | 700mV @ 250μA | 2.4A Ta | 8nC @ 4.5V | Schottky Diode (Isolated) | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF2804STRR7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf2804strl7pp-datasheets-6651.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 3 | No | Single | 330W | D2PAK (7-Lead) | 6.93nF | 13 ns | 120ns | 130 ns | 130 ns | 160A | 20V | 40V | 330W Tc | 2mOhm | 40V | N-Channel | 6930pF @ 25V | 1.6mOhm @ 160A, 10V | 4V @ 250μA | 160A Tc | 260nC @ 10V | 1.6 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7523D1TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7523d1trpbf-datasheets-9555.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 30V | 1.25W Ta | N-Channel | 210pF @ 25V | 130m Ω @ 1.7A, 10V | 1V @ 250μA | 2.7A Ta | 12nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF6100PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineon-irf6100pbf-datasheets-3739.pdf | 4-FlipFet™ | Lead Free | No SVHC | 4 | 2.2W | 1 | 4-FlipFet™ | 1.23nF | 5.1A | 12V | -20V | 20V | 2.2W Ta | P-Channel | 1230pF @ 15V | -1.2 V | 65mOhm @ 5.1A, 4.5V | 1.2V @ 250μA | 5.1A Ta | 21nC @ 5V | 65 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLR3715TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 20V | 3.8W Ta 71W Tc | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN5L06T-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn5l06t7-datasheets-9575.pdf | SOT-523 | 3 | 3 | EAR99 | LOW CAPACITANCE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | Single | 40 | 150mW | 1 | FET General Purpose Power | 280mA | 20V | SILICON | SWITCHING | 150mW Ta | 0.28A | 3Ohm | 5 pF | 50V | N-Channel | 50pF @ 25V | 3 Ω @ 200mA, 2.7V | 1.2V @ 250μA | 280mA Ta | 1.8V 2.7V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IRF1503STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf1503spbf-datasheets-0380.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 200W Tc | 75A | 960A | 0.0033Ohm | 510 mJ | N-Channel | 5730pF @ 25V | 3.3m Ω @ 140A, 10V | 4V @ 250μA | 75A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
NTD4863NA-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4863na1g-datasheets-3067.pdf | TO-251-3 Stub Leads, IPak | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | NO | 3 | Single | 1.95W | 1 | 11.3mA | 20V | SILICON | DRAIN | SWITCHING | 25V | 25V | 1.27W Ta 36.6W Tc | 9.2A | 98A | 60.5 mJ | N-Channel | 990pF @ 12V | 9.3m Ω @ 30A, 10V | 2.5V @ 250μA | 9.2A Ta 49A Tc | 17.8nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||
IRF7759L2TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7759l2trpbf-datasheets-3220.pdf | DirectFET™ Isometric L8 | 9.144mm | 508μm | 7.1mm | Lead Free | No SVHC | 2.3MOhm | 5 | No | Single | 125W | DIRECTFET L8 | 12.222nF | 18 ns | 37ns | 33 ns | 80 ns | 26A | 20V | 75V | 3V | 3.3W Ta 125W Tc | 96 ns | 1.8mOhm | 75V | N-Channel | 12222pF @ 25V | 3 V | 2.3mOhm @ 96A, 10V | 4V @ 250μA | 26A Ta 375A Tc | 300nC @ 10V | 2.3 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
NTLUF4189NZTBG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntluf4189nztbg-datasheets-9408.pdf | 6-UFDFN Exposed Pad | Lead Free | 6 | 200mOhm | 6 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 6 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.2A | SILICON | DRAIN | SWITCHING | 30V | 30V | 500mW Ta | N-Channel | 95pF @ 15V | 200m Ω @ 1.5A, 4.5V | 1.5V @ 250μA | 1.2A Ta | 3nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
NDF06N60ZG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndf06n60zg-datasheets-9410.pdf | TO-220-3 Full Pack | 10.63mm | 16.12mm | 4.9mm | Lead Free | 3 | 14 Weeks | 1.2Ohm | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 31W | 1 | FET General Purpose Power | 13 ns | 17ns | 28 ns | 30 ns | 7.1A | 30V | SILICON | ISOLATED | 35W Tc | TO-220AB | 28A | 600V | N-Channel | 1107pF @ 25V | 1.2 Ω @ 3A, 10V | 4.5V @ 100μA | 7.1A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
NDF10N60ZG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/onsemiconductor-ndf10n60zg-datasheets-9413.pdf | TO-220-3 Full Pack | 10.63mm | 16.12mm | 4.9mm | Lead Free | 3 | 18 Weeks | No SVHC | 650mOhm | 3 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | NO | 3 | Single | 36W | 1 | FET General Purpose Powers | 15 ns | 31ns | 23 ns | 40 ns | 10A | 30V | SILICON | ISOLATED | 3.9V | 39W Tc | TO-220AB | 6A | 40A | 600V | N-Channel | 1645pF @ 25V | 750m Ω @ 5A, 10V | 4.5V @ 100μA | 10A Tc | 68nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
IRFH5306TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5306tr2pbf-datasheets-9382.pdf | 8-PowerVDFN | 6mm | 900μm | 5mm | Lead Free | No SVHC | 8.1MOhm | 8 | No | 3.6W | Single | 3.6W | 1 | PQFN (5x6) Single Die | 1.125nF | 9 ns | 26ns | 6.1 ns | 9.1 ns | 44A | 20V | 30V | 1.8V | 26 ns | 8.1mOhm | 30V | N-Channel | 1125pF @ 15V | 1.8 V | 8.1mOhm @ 15A, 10V | 2.35V @ 25μA | 15A Ta 44A Tc | 12nC @ 4.5V | 8.1 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
CSD25302Q2 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/texasinstruments-csd25302q2-datasheets-9250.pdf | 6-SMD, Flat Leads | Contains Lead | 6 | No SVHC | 6 | no | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | 260 | CSD25302 | 6 | Single | 2.4W | 1 | Other Transistors | 3.2 ns | 13.2ns | 1.3 ns | 8.6 ns | 5A | 8V | SILICON | SOURCE | SWITCHING | 20V | -650mV | 2.4W Ta | 5A | 20A | 0.092Ohm | -20V | P-Channel | 350pF @ 10V | -650 mV | 49m Ω @ 3A, 4.5V | 900mV @ 250μA | 5A Tc | 3.4nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
NTLUS3192PZTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntlus3192pztbg-datasheets-9373.pdf | 6-PowerUFDFN | Lead Free | 3 | 6 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | 6 | Single | NOT SPECIFIED | 1.5W | 1 | Not Qualified | S-PDSO-N3 | 2.2A | 8V | SILICON | DRAIN | SWITCHING | 20V | 600mW Ta | 0.085Ohm | -20V | P-Channel | 450pF @ 10V | 85m Ω @ 3A, 4.5V | 1V @ 250μA | 2.2A Ta | 8.5nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
IRL3716STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3716pbf-datasheets-0487.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 3 | Single | 210W | 1 | D2PAK | 5.09nF | 140ns | 36 ns | 38 ns | 180A | 20V | 20V | 20V | 3V | 210W Tc | 4mOhm | 20V | N-Channel | 5090pF @ 10V | 3 V | 4mOhm @ 90A, 10V | 3V @ 250μA | 180A Tc | 79nC @ 4.5V | 4 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IRF7739L2TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7739l2trpbf-datasheets-2547.pdf | DirectFET™ Isometric L8 | 9.144mm | 508μm | 7.1mm | Lead Free | No SVHC | 1MOhm | 8 | No | 125W | 1 | DIRECTFET L8 | 11.88nF | 21 ns | 71ns | 42 ns | 56 ns | 46A | 20V | 40V | 2.8V | 3.8W Ta 125W Tc | 130 ns | 1mOhm | 40V | N-Channel | 11880pF @ 25V | 2.8 V | 1mOhm @ 160A, 10V | 4V @ 250μA | 46A Ta 375A Tc | 330nC @ 10V | 1 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFH5302TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/infineontechnologies-irfh5302tr2pbf-datasheets-9395.pdf | 8-PowerVDFN | 5mm | 810μm | 6mm | Lead Free | No SVHC | 8 | No | 3.6W | Single | 100W | 1 | PQFN (5x6) Single Die | 4.4nF | 18 ns | 51ns | 18 ns | 22 ns | 100A | 20V | 30V | 1.8V | 29 ns | 2.1mOhm | 30V | N-Channel | 4400pF @ 15V | 1.8 V | 2.1mOhm @ 50A, 10V | 2.35V @ 100μA | 32A Ta 100A Tc | 76nC @ 10V | 2.1 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
IRFSL33N15DTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs33n15dpbf-datasheets-8950.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 150V | 3.8W Ta 170W Tc | N-Channel | 2020pF @ 25V | 56m Ω @ 20A, 10V | 5.5V @ 250μA | 33A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLR024ZTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlu024zpbf-datasheets-9358.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | 3 | No | Single | 35W | 1 | D-Pak | 380pF | 8.2 ns | 43ns | 16 ns | 19 ns | 16A | 16V | 55V | 35W Tc | 58mOhm | 55V | N-Channel | 380pF @ 25V | 58mOhm @ 9.6A, 10V | 3V @ 250μA | 16A Tc | 9.9nC @ 5V | 58 mΩ | 4.5V 10V | ±16V |
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