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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTR4501NT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntr4501nt1g-datasheets-3712.pdf | 20V | 3.2A | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | 1.25W | DUAL | GULL WING | 240 | 3 | Single | 30 | 1.25W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | 12ns | 12 ns | 12 ns | 3.2A | 12V | SWITCHING | TO-236AB | 10A | 0.08Ohm | 20V | N-Channel | 200pF @ 10V | 80m Ω @ 3.6A, 4.5V | 1.2V @ 250μA | 3.2A Ta | 6nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||
| 2SJ656 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | DEPLETION MODE | RoHS Compliant | 2004 | /files/onsemiconductor-2sj656-datasheets-9107.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | EAR99 | No | 8541.29.00.95 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | 3 | Single | 2W | 1 | 30 ns | 110ns | 125 ns | 340 ns | 18A | 20V | 100V | SILICON | ISOLATED | SWITCHING | 2W Ta 30W Tc | TO-220AB | 72A | 0.104Ohm | -100V | P-Channel | 4200pF @ 20V | 2.6 V | 75.5m Ω @ 9A, 10V | 18A Ta | 74nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFR80N20Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr80n20q-datasheets-9024.pdf | ISOPLUS247™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | 50ns | 20 ns | 75 ns | 71A | 20V | SILICON | ISOLATED | SWITCHING | 310W Tc | 80A | 0.028Ohm | 1500 mJ | 200V | N-Channel | 4600pF @ 25V | 28m Ω @ 80A, 10V | 4V @ 4mA | 71A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NTMS4503NR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntms4503nr2-datasheets-9471.pdf | 28V | 14A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8MOhm | 8 | OBSOLETE (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 8 | Single | 40 | 2.5W | 1 | FET General Purpose Power | Not Qualified | 70ns | 23 ns | 21 ns | 14A | 20V | SILICON | SWITCHING | 930mW Ta | 9A | 28V | N-Channel | 2400pF @ 16V | 8m Ω @ 14A, 10V | 2V @ 250μA | 9A Ta | 23nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTMFS4836NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4836nt3g-datasheets-7022.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 6 | 5 | LAST SHIPMENTS (Last Updated: 13 hours ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | FLAT | 260 | 5 | Single | 40 | 2.25W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F6 | 30ns | 12 ns | 20 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 890mW Ta 55.6W Tc | 11A | 180A | 0.006Ohm | 242 mJ | 30V | N-Channel | 2677pF @ 12V | 4m Ω @ 30A, 10V | 2.5V @ 250μA | 11A Ta 90A Tc | 28nC @ 4.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF8707GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/infineontechnologies-irf8707gtrpbf-datasheets-8725.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | No SVHC | 8 | No | 2.5W | 1 | 8-SO | 760pF | 6.7 ns | 7.9ns | 4.4 ns | 7.3 ns | 11mA | 20V | 30V | 1.8V | 2.5W Ta | 17.5mOhm | 30V | N-Channel | 760pF @ 15V | 1.8 V | 11.9mOhm @ 11A, 10V | 2.35V @ 25μA | 11A Ta | 9.3nC @ 4.5V | 11.9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTMFS4837NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntmfs4837nt3g-datasheets-7000.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 6 | 5 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | FLAT | 260 | 5 | Single | 40 | 2.2W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F6 | 55ns | 10 ns | 19 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 880mW Ta 47.2W Tc | 10A | 148A | 242 mJ | 30V | N-Channel | 2048pF @ 12V | 5m Ω @ 30A, 10V | 2.5V @ 250μA | 10A Ta 74A Tc | 22nC @ 4.5V | 4.5V 11.5V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTMS5P02R2SG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntms5p02r2g-datasheets-5645.pdf | -20V | -7.05A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8-SOIC | 1.9nF | 3.95A | 20V | 790mW Ta | P-Channel | 1900pF @ 16V | 33mOhm @ 5.4A, 4.5V | 1.25V @ 250μA | 3.95A Ta | 35nC @ 4.5V | 33 mΩ | 2.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3004-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfs3004trl7pp-datasheets-0035.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 6 | No SVHC | 1.25MOhm | 7 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 380W | 1 | FET General Purpose Power | R-PSSO-G6 | 23 ns | 240ns | 160 ns | 91 ns | 400A | 20V | SILICON | DRAIN | SWITCHING | 4V | 380W Tc | 240A | 290 mJ | 40V | N-Channel | 9130pF @ 25V | 1.25m Ω @ 195A, 10V | 4V @ 250μA | 240A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFX260N17T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfx260n17t-datasheets-9075.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 260A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 170V | 170V | 1670W Tc | 700A | 0.0065Ohm | 3000 mJ | N-Channel | 24000pF @ 25V | 6.5m Ω @ 60A, 10V | 5V @ 8mA | 260A Tc | 400nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFN260N17T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfn260n17t-datasheets-9078.pdf | SOT-227-4, miniBLOC | 3 | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | NICKEL | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 245A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 170V | 170V | 1090W Tc | 700A | 0.0065Ohm | 3000 mJ | N-Channel | 24000pF @ 25V | 6.5m Ω @ 60A, 10V | 5V @ 8mA | 245A Tc | 400nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| 2SK3707 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2sk3707-datasheets-9081.pdf | TO-220-3 Full Pack | 3 | 3 | No | 8541.29.00.95 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | SINGLE | 3 | 25W | 1 | FET General Purpose Power | 19.5 ns | 30ns | 60 ns | 185 ns | 20A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 2W Ta 25W Tc | TO-220AB | 80A | 0.08Ohm | 125 mJ | N-Channel | 2150pF @ 20V | 60m Ω @ 10A, 10V | 20A Ta | 44nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFK260N17T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfx260n17t-datasheets-9075.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 260A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 170V | 170V | 1670W Tc | 700A | 0.0065Ohm | N-Channel | 24000pF @ 25V | 6.5m Ω @ 60A, 10V | 5V @ 8mA | 260A Tc | 400nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| 2SK3708 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2sk3708-datasheets-9092.pdf | TO-220-3 Full Pack | 3 | 3 | No | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | SINGLE | 3 | 30W | 1 | FET General Purpose Power | 29.5 ns | 65ns | 105 ns | 310 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 2W Ta 30W Tc | TO-220AB | 0.042Ohm | N-Channel | 4200pF @ 20V | 33m Ω @ 15A, 10V | 30A Ta | 73nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF8721GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf8721gtrpbf-datasheets-8758.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | No SVHC | 8 | No | 2.5W | 8-SO | 1.04nF | 8.2 ns | 11ns | 7 ns | 8.1 ns | 14A | 20V | 30V | 2.5W Ta | 12.5mOhm | 30V | N-Channel | 1040pF @ 15V | 2.35 V | 8.5mOhm @ 14A, 10V | 2.35V @ 25μA | 14A Ta | 12nC @ 4.5V | 8.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF8714GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf8714gpbf-datasheets-9017.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | No SVHC | 8 | No | 2.5W | 8-SO | 1.02nF | 10 ns | 9.9ns | 5 ns | 11 ns | 14mA | 20V | 30V | 1.8V | 2.5W Ta | 13mOhm | 30V | N-Channel | 1020pF @ 15V | 1.8 V | 8.7mOhm @ 14A, 10V | 2.35V @ 25μA | 14A Ta | 12nC @ 4.5V | 8.7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NTD85N02RT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntd85n02r001-datasheets-9166.pdf | 24V | 85A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | GULL WING | 260 | 4 | Single | 40 | 2.4W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 77ns | 12 ns | 25 ns | 85A | 20V | SILICON | DRAIN | SWITCHING | 1.25W Ta 78.1W Tc | 0.0052Ohm | 85 mJ | 24V | N-Channel | 2050pF @ 20V | 5.2m Ω @ 20A, 10V | 2V @ 250μA | 12A Ta 85A Tc | 17.7nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFH80N085 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft80n085-datasheets-1019.pdf | TO-247-3 | Lead Free | 3 | 9MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 300W | 1 | 75ns | 31 ns | 95 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 85A | 2500 mJ | 85V | N-Channel | 4800pF @ 25V | 9m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTJS4160NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntjs4160nt1g-datasheets-8934.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 6 | 40 | 620mW | 1 | Not Qualified | 7.2ns | 7.2 ns | 10.9 ns | 2.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300mW Ta | 30V | N-Channel | 230pF @ 10V | 60m Ω @ 2.6A, 10V | 2.4V @ 250μA | 1.8A Ta | 2.75nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTMFS4119NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntmfs4119nt1g-datasheets-8947.pdf | 30V | 18A | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 9 Weeks | 2.3MOhm | 5 | LAST SHIPMENTS (Last Updated: 5 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | 260 | 5 | 40 | 2.3W | 1 | FET General Purpose Power | 28 ns | 26ns | 40 ns | 35 ns | 30A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900mW Ta | 30V | N-Channel | 4800pF @ 24V | 3.5m Ω @ 29A, 10V | 2.5V @ 250μA | 11A Ta | 60nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFE80N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe80n50-datasheets-8957.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 580W | 1 | FET General Purpose Power | Not Qualified | 70ns | 27 ns | 102 ns | 72A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 580W Tc | 320A | 0.055Ohm | 6000 mJ | 500V | N-Channel | 9890pF @ 25V | 55m Ω @ 40A, 10V | 4.5V @ 8mA | 72A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTMFS4120NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4120nt1g-datasheets-8932.pdf | 30V | 18A | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 5 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | FLAT | 260 | 5 | 40 | 2.2W | 1 | FET General Purpose Power | Not Qualified | 32ns | 31 ns | 27 ns | 11A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900mW Ta | 30V | N-Channel | 3600pF @ 24V | 4.5m Ω @ 26A, 10V | 2.5V @ 250μA | 11A Ta | 50nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NTHS2101PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nths2101pt1-datasheets-9223.pdf | -8V | -5.4A | 8-SMD, Flat Lead | Lead Free | 8 | 8 | LAST SHIPMENTS (Last Updated: 14 hours ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | DUAL | C BEND | 260 | 8 | 40 | 1.3W | 1 | Other Transistors | Not Qualified | 28ns | 28 ns | 73 ns | 7.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.3W Ta | 0.025Ohm | -8V | P-Channel | 2400pF @ 6.4V | -450 mV | 25m Ω @ 5.4A, 4.5V | 1.5V @ 250μA | 5.4A Tj | 30nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| IRF7665S2TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/infineontechnologies-irf7665s2tr1pbf-datasheets-8778.pdf | DirectFET™ Isometric SB | 4.826mm | 508μm | 3.95mm | Lead Free | No SVHC | 62MOhm | 4 | No | Single | 2.4W | 1 | DIRECTFET SB | 515pF | 3.8 ns | 6.4ns | 3.6 ns | 7.1 ns | 14.4mA | 20V | 100V | 4V | 2.4W Ta 30W Tc | 51mOhm | 100V | N-Channel | 515pF @ 25V | 4 V | 62mOhm @ 8.9A, 10V | 5V @ 25μA | 4.1A Ta 14.4A Tc | 13nC @ 10V | 62 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTMS4107NR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntms4107nr2g-datasheets-8978.pdf | 30V | 15A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | OBSOLETE (Last Updated: 4 days ago) | yes | EAR99 | unknown | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 8 | 40 | 16.7W | 1 | FET General Purpose Power | Not Qualified | 10ns | 38 ns | 94 ns | 18A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 930mW Ta | 11A | 0.0045Ohm | 30V | N-Channel | 6000pF @ 15V | 4.5m Ω @ 15A, 10V | 2.5V @ 250μA | 11A Ta | 45nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFH30N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixft32n50q-datasheets-5314.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 42ns | 20 ns | 75 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 120A | 0.16Ohm | 1500 mJ | 500V | N-Channel | 5700pF @ 25V | 160m Ω @ 15A, 10V | 4V @ 4mA | 30A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTMS4705NR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntms4705nr2g-datasheets-8981.pdf | 30V | 10A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | OBSOLETE (Last Updated: 6 days ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 8 | 40 | 15.2W | 1 | FET General Purpose Power | Not Qualified | 4.7ns | 17 ns | 27 ns | 7.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 850mW Ta | 30V | N-Channel | 1078pF @ 24V | 10m Ω @ 12A, 10V | 3V @ 250μA | 7.4A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NTMFS4744NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntmfs4744nt3g-datasheets-6998.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 5 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | 260 | 5 | 40 | 2.2W | 1 | FET General Purpose Power | 12 ns | 203ns | 83 ns | 14 ns | 53A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 880mW Ta 47.2W Tc | 7A | 286 mJ | 30V | N-Channel | 1300pF @ 12V | 7.6m Ω @ 30A, 10V | 2.5V @ 250μA | 7A Ta | 17nC @ 4.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||
| VN2410LZL1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/onsemiconductor-vn2410lg-datasheets-7792.pdf | 240V | 200mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | EUROPEAN PART NUMBER | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | Not Qualified | 8ns | 8 ns | 23 ns | 200mA | 20V | SWITCHING | 350mW Tc | 0.2A | 20 pF | 240V | N-Channel | 125pF @ 25V | 10 Ω @ 500mA, 10V | 2V @ 1mA | 200mA Ta | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NTTS2P02R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntts2p02r2-datasheets-9104.pdf | -20V | -2.4A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Lead Free | 8 | 8 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 8 | 40 | 780mW | 1 | Other Transistors | Not Qualified | 31ns | 31 ns | 33 ns | 2.4A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 780mW Ta | 0.09Ohm | -20V | P-Channel | 550pF @ 16V | 90m Ω @ 2.4A, 4.5V | 1.4V @ 250μA | 2.4A Ta | 18nC @ 4.5V | 2.5V 4.5V | ±8V |
