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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF730STRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf730spbf-datasheets-3742.pdf | 400V | 5.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 3 | Single | 3.1W | D2PAK | 700pF | 15ns | 14 ns | 38 ns | 5.5A | 20V | 400V | 3.1W Ta 74W Tc | 1Ohm | 400V | N-Channel | 700pF @ 25V | 1Ohm @ 3.3A, 10V | 4V @ 250μA | 5.5A Tc | 38nC @ 10V | 1 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF9640L | Vishay Siliconix | $12.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | -200V | -11A | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | I2PAK | 1.2nF | 43ns | 11A | 200V | 3W Ta 125W Tc | P-Channel | 1200pF @ 25V | 500mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 44nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9610STRL | Vishay Siliconix | $4.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9610spbf-datasheets-1353.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 1.8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3W Ta 20W Tc | 7A | 3Ohm | P-Channel | 170pF @ 25V | 3 Ω @ 900mA, 10V | 4V @ 250μA | 1.8A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRLZ44NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | EAR99 | 55V | 3.8W Ta 110W Tc | N-Channel | 1700pF @ 25V | 22m Ω @ 25A, 10V | 2V @ 250μA | 47A Tc | 48nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN4306ASTOA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/diodesincorporated-zvn4306a-datasheets-8702.pdf | 60V | 1.1A | E-Line-3 | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 453.59237mg | No SVHC | EAR99 | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 850mW | 1 | R-PSIP-W3 | 8 ns | 25ns | 25 ns | 30 ns | 1.1A | 20V | SILICON | SWITCHING | 850mW Ta | 0.45Ohm | 60V | N-Channel | 350pF @ 25V | 330m Ω @ 3A, 10V | 3V @ 1mA | 1.1A Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||
| IRF9630L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2015 | /files/vishaysiliconix-irf9630pbf-datasheets-1286.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3W | 6.5A | 200V | P-Channel | 700pF @ 25V | 800m Ω @ 3.9A, 10V | 4V @ 250μA | 6.5A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9620L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9620pbf-datasheets-1688.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3W | I2PAK | 350pF | 3.5A | 200V | P-Channel | 350pF @ 25V | 1.5Ohm @ 1.5A, 10V | 4V @ 250μA | 3.5A Tc | 22nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN4306ASTZ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn4306a-datasheets-8702.pdf | 60V | 1.1A | E-Line-3 | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 453.59237mg | no | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | BOTTOM | 260 | 1 | Single | 40 | 850mW | 1 | FET General Purpose Power | O-PBCY-T3 | 8 ns | 25ns | 25 ns | 30 ns | 1.1A | 20V | SILICON | SWITCHING | 850mW Ta | 0.33Ohm | 30 pF | 60V | N-Channel | 350pF @ 25V | 330m Ω @ 3A, 10V | 3V @ 1mA | 1.1A Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||
| IRFBC30ASTRL | Vishay Siliconix | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc30astrlpbf-datasheets-5227.pdf | 600V | 3.6A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 1 | Single | D2PAK | 510pF | 9.8 ns | 13ns | 12 ns | 19 ns | 3.6A | 30V | 600V | 74W Tc | 2.2Ohm | N-Channel | 510pF @ 25V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250μA | 3.6A Tc | 23nC @ 10V | 2.2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRF9Z24NSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 55V | 3.8W Ta 45W Tc | P-Channel | 350pF @ 25V | 175mOhm @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF730ASTRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf730aspbf-datasheets-5061.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 600pF | 5.5A | 400V | 74W Tc | N-Channel | 600pF @ 25V | 1Ohm @ 3.3A, 10V | 4.5V @ 250μA | 5.5A Tc | 22nC @ 10V | 1 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9610L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9610pbf-datasheets-1546.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3W | I2PAK | 170pF | 1.8A | 200V | P-Channel | 170pF @ 25V | 3Ohm @ 900mA, 10V | 4V @ 250μA | 1.8A Tc | 11nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840LCSTRR | Vishay Siliconix | $1.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf840lclpbf-datasheets-5874.pdf | 500V | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 3 | D2PAK | 1.1nF | 25ns | 8A | 500V | 3.1W Ta 125W Tc | N-Channel | 1100pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9530L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3.7W | 12A | 100V | P-Channel | 860pF @ 25V | 300m Ω @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9540STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-irf9540spbf-datasheets-4128.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | EAR99 | AVALANCHE RATED | unknown | SINGLE | GULL WING | 225 | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 19A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.7W Ta 150W Tc | 72A | 0.2Ohm | 640 mJ | P-Channel | 1400pF @ 25V | 200m Ω @ 11A, 10V | 4V @ 250μA | 19A Tc | 61nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF3706L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 20V | 88W Tc | N-Channel | 2410pF @ 10V | 8.5mOhm @ 15A, 10V | 2V @ 250μA | 77A Tc | 35nC @ 4.5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7460TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 20V | 2.5W Ta | N-Channel | 2050pF @ 10V | 10mOhm @ 12A, 10V | 3V @ 250μA | 12A Ta | 19nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL1004L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 40V | 3.8W Ta 200W Tc | N-Channel | 5330pF @ 25V | 6.5mOhm @ 78A, 10V | 1V @ 250μA | 130A Tc | 100nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9540NSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineon-irf9540nstrr-datasheets-1038.pdf | -100V | -23A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | 67ns | 23A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 3.8W Ta 140W Tc | 92A | 0.117Ohm | 84 mJ | P-Channel | 1300pF @ 25V | 117m Ω @ 11A, 10V | 4V @ 250μA | 23A Tc | 97nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF7809ATR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2.5W Ta | N-Channel | 7300pF @ 16V | 8.5mOhm @ 15A, 4.5V | 1V @ 250μA | 14.5A Ta | 75nC @ 5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9510STRL | Vishay Siliconix | $5.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9510strlpbf-datasheets-7460.pdf | -100V | -4A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 200pF | 10 ns | 27ns | 17 ns | 15 ns | 4A | 20V | 100V | 3.7W Ta 43W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF9520NSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 100V | 3.8W Ta 48W Tc | P-Channel | 350pF @ 25V | 480mOhm @ 4A, 10V | 4V @ 250μA | 6.8A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9510STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9510strlpbf-datasheets-7460.pdf | -100V | -4A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | unknown | 8541.29.00.95 | e0 | TIN LEAD | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 27ns | 4A | SILICON | SINGLE | DRAIN | SWITCHING | 100V | 3.7W Ta 43W Tc | 4A | 16A | 200 mJ | P-Channel | 200pF @ 25V | 1.2 Ω @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF830STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf830strlpbf-datasheets-8512.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | unknown | e0 | TIN LEAD | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 4.5A | SILICON | SINGLE | DRAIN | SWITCHING | 500V | 500V | 3.1W Ta 74W Tc | N-Channel | 610pF @ 25V | 1.5 Ω @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF737LCSTRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 74W | 6.1A | 300V | N-Channel | 430pF @ 25V | 750m Ω @ 3.7A, 10V | 4V @ 250μA | 6.1A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840AL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf840astrrpbf-datasheets-6542.pdf | 500V | 8A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | Contains Lead | 2.387001g | 1 | Single | I2PAK | 1.018nF | 11 ns | 23ns | 19 ns | 26 ns | 8A | 30V | 500V | 3.1W Ta 125W Tc | 850mOhm | 500V | N-Channel | 1018pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 38nC @ 10V | 850 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRF9520NSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 100V | 3.8W Ta 48W Tc | P-Channel | 350pF @ 25V | 480m Ω @ 4A, 10V | 4V @ 250μA | 6.8A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9540L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9540pbf-datasheets-2217.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3.7W | I2PAK | 1.4nF | 19A | 100V | P-Channel | 1400pF @ 25V | 200mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 61nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830L | Vishay Siliconix | $8.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf830strlpbf-datasheets-8512.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 1.437803g | unknown | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 4.5A | SILICON | SINGLE | DRAIN | 500V | 500V | 3.1W Ta 74W Tc | TO-220AB | N-Channel | 610pF @ 25V | 1.5 Ω @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF9510L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9510pbf-datasheets-9175.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3.7W | I2PAK | 200pF | 4A | 100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V |
