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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF620STRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf620strlpbf-datasheets-3318.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 1 | Single | D2PAK | 260pF | 7.2 ns | 22ns | 13 ns | 19 ns | 5.2A | 20V | 200V | 3W Ta 50W Tc | 800mOhm | N-Channel | 260pF @ 25V | 800mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 14nC @ 10V | 800 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF737LCL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | 74W | 6.1A | 300V | N-Channel | 430pF @ 25V | 750m Ω @ 3.7A, 10V | 4V @ 250μA | 6.1A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF640STRL | Vishay Siliconix | $1.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf640spbf-datasheets-2368.pdf | 200V | 18A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 2 | 1.437803g | 3 | EAR99 | AVALANCHE RATED | e0 | TIN LEAD | GULL WING | 240 | 4 | 1 | Single | 30 | 1 | Not Qualified | R-PSSO-G2 | 14 ns | 51ns | 36 ns | 45 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 130W Tc | 72A | 580 mJ | 200V | N-Channel | 1300pF @ 25V | 180m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| IRF730ASTRL | Vishay Siliconix | $0.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf730aspbf-datasheets-5061.pdf | 400V | 5.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 1 | Single | D2PAK | 600pF | 10 ns | 22ns | 16 ns | 20 ns | 5.5A | 30V | 400V | 74W Tc | 1Ohm | N-Channel | 600pF @ 25V | 1Ohm @ 3.3A, 10V | 4.5V @ 250μA | 5.5A Tc | 22nC @ 10V | 1 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRF3707 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | TO-220-3 | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 87W Tc | 42A | 230A | 0.0095Ohm | 40 mJ | N-Channel | 1990pF @ 15V | 12.5m Ω @ 15A, 10V | 3V @ 250μA | 62A Tc | 19nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF720L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf720spbf-datasheets-8875.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | unknown | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 3.3A | SILICON | SINGLE | DRAIN | SWITCHING | 400V | 400V | 3.1W Ta 50W Tc | TO-220AB | 13A | N-Channel | 410pF @ 25V | 1.8 Ω @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF610STRL | Vishay Siliconix | $6.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-irf610spbf-datasheets-3266.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 1 | Single | D2PAK | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 3.3A | 20V | 200V | 3W Ta 36W Tc | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 1.5Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF710STRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 170pF | 2A | 400V | 3.1W Ta 36W Tc | N-Channel | 170pF @ 25V | 3.6Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 17nC @ 10V | 3.6 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF624STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf624spbf-datasheets-4923.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 260pF | 4.4A | 250V | 3.1W Ta 50W Tc | N-Channel | 260pF @ 25V | 1.1Ohm @ 2.6A, 10V | 4V @ 250μA | 4.4A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3708 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | TO-220-3 | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 87W Tc | TO-220AB | 62A | 248A | 0.012Ohm | 213 mJ | N-Channel | 2417pF @ 15V | 12m Ω @ 15A, 10V | 2V @ 250μA | 62A Tc | 24nC @ 4.5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| IRF624STRL | Vishay Siliconix | $12.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf624spbf-datasheets-4923.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 260pF | 4.4A | 250V | 3.1W Ta 50W Tc | N-Channel | 260pF @ 25V | 1.1Ohm @ 2.6A, 10V | 4V @ 250μA | 4.4A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7233TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 12V | 2.5W Ta | P-Channel | 6000pF @ 10V | 20mOhm @ 9.5A, 4.5V | 600mV @ 250μA | 9.5A Ta | 74nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF730L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3.1W | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 5.5A | SILICON | SINGLE | DRAIN | SWITCHING | 400V | 400V | TO-220AB | 20A | 1Ohm | N-Channel | 600pF @ 25V | 1 Ω @ 3.3A, 10V | 4V @ 250μA | 5.5A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF610L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf610spbf-datasheets-3266.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | EAR99 | unknown | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | 3.3A | SILICON | SINGLE | DRAIN | 200V | 200V | 3W Ta 36W Tc | TO-220AB | N-Channel | 140pF @ 25V | 1.5 Ω @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF520NSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 48W Tc | 9.7A | 38A | 0.2Ohm | 91 mJ | N-Channel | 330pF @ 25V | 200m Ω @ 5.7A, 10V | 4V @ 250μA | 9.7A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF614STRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | EAR99 | AVALANCHE RATED | e0 | TIN LEAD | SINGLE | GULL WING | 240 | 4 | 30 | 1 | Not Qualified | R-PSSO-G2 | 2.7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 3.1W Ta 36W Tc | 8A | 2Ohm | 61 mJ | N-Channel | 140pF @ 25V | 2 Ω @ 1.6A, 10V | 4V @ 250μA | 2.7A Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF520STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf520spbf-datasheets-0907.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.2A | 100V | 3.7W Ta 60W Tc | N-Channel | 360pF @ 25V | 270m Ω @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF640L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf640spbf-datasheets-2368.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | I2PAK | 1.3nF | 18A | 200V | 3.1W Ta 130W Tc | N-Channel | 1300pF @ 25V | 180mOhm @ 11A, 10V | 4V @ 250μA | 18A Tc | 70nC @ 10V | 180 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF630L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf630pbf-datasheets-0717.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3W | I2PAK | 800pF | 9A | 200V | N-Channel | 800pF @ 25V | 400mOhm @ 5.4A, 10V | 4V @ 250μA | 9A Tc | 43nC @ 10V | 400 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF520STRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf520spbf-datasheets-0907.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | 8541.29.00.95 | e0 | TIN LEAD | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 9.2A | SILICON | SINGLE | DRAIN | SWITCHING | 100V | 100V | 3.7W Ta 60W Tc | 37A | 0.27Ohm | 200 mJ | N-Channel | 360pF @ 25V | 270m Ω @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF614STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 1 | Single | D2PAK | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 2.7A | 20V | 250V | 3.1W Ta 36W Tc | 2Ohm | 250V | N-Channel | 140pF @ 25V | 2Ohm @ 1.6A, 10V | 4V @ 250μA | 2.7A Tc | 8.2nC @ 10V | 2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF634STRL | Vishay Siliconix | $0.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf634strrpbf-datasheets-9861.pdf | 250V | 8.1A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | unknown | e0 | TIN LEAD | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 21ns | 8.1A | SILICON | SINGLE | DRAIN | SWITCHING | 3.1W Ta 74W Tc | 0.45Ohm | N-Channel | 770pF @ 25V | 450m Ω @ 5.1A, 10V | 4V @ 250μA | 8.1A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF620STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf620strlpbf-datasheets-3318.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 260pF | 5.2A | 200V | 3W Ta 50W Tc | N-Channel | 260pF @ 25V | 800mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 14nC @ 10V | 800 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3315STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.8W Ta 94W Tc | 21A | 84A | 0.082Ohm | 350 mJ | N-Channel | 1300pF @ 25V | 82m Ω @ 12A, 10V | 4V @ 250μA | 21A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF620L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf620pbf-datasheets-8474.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3W | I2PAK | 260pF | 5.2A | 200V | N-Channel | 260pF @ 25V | 800mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 14nC @ 10V | 800 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF530L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihfr420age3-datasheets-4094.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3.7W | TO-262 | 670pF | 14A | 100V | N-Channel | 670pF @ 25V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 160 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf644pbf-datasheets-1274.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3.1W | I2PAK | 1.3nF | 14A | 250V | N-Channel | 1300pF @ 25V | 280mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 68nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3708STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 30V | 87W Tc | N-Channel | 2417pF @ 15V | 12mOhm @ 15A, 10V | 2V @ 250μA | 62A Tc | 24nC @ 4.5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF634L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf634pbf-datasheets-1281.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3.1W | I2PAK | 770pF | 8.1A | 250V | N-Channel | 770pF @ 25V | 450mOhm @ 5.1A, 10V | 4V @ 250μA | 8.1A Tc | 41nC @ 10V | 450 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010NSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 180W Tc | TO-252 | 75A | 290A | 0.011Ohm | 250 mJ | N-Channel | 3210pF @ 25V | 11m Ω @ 43A, 10V | 4V @ 250μA | 85A Tc | 120nC @ 10V | 10V | ±20V |
