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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP5NK40Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std5nk40z1-datasheets-1442.pdf | 400V | 3A | TO-220-3 | Lead Free | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | STP5N | 3 | Single | NOT SPECIFIED | 45W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 6ns | 11 ns | 22.5 ns | 3A | 30V | SILICON | SWITCHING | 45W Tc | TO-220AB | 3A | 12A | 130 mJ | 400V | N-Channel | 305pF @ 25V | 1.8 Ω @ 1.5A, 10V | 4.5V @ 50μA | 3A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| NTY100N10 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nty100n10g-datasheets-7584.pdf | TO-264-3, TO-264AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 313W Tc | 123A | 369A | 0.01Ohm | 500 mJ | N-Channel | 10.11pF @ 25V | 10m Ω @ 50A, 10V | 4V @ 250μA | 123A Tc | 350nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STP4NB50 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp4nb50-datasheets-5410.pdf | 500V | 3.8A | TO-220-3 | Contains Lead | 3 | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | STP4N | 3 | Single | 80W | 1 | FET General Purpose Power | R-PSFM-T3 | 11 ns | 8ns | 5 ns | 3.8A | 30V | SILICON | SWITCHING | 80W Tc | TO-220AB | 15.2A | 220 mJ | 500V | N-Channel | 400pF @ 25V | 2.8 Ω @ 1.9A, 10V | 4V @ 250μA | 3.8A Tc | 21nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| STS4DNFS30L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts4dnfs30l-datasheets-5404.pdf | 30V | 4A | 8-SOIC (0.154, 3.90mm Width) | 6.35mm | 6.35mm | 12.7mm | Lead Free | 8 | 4.535924g | No SVHC | 56mOhm | 8 | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | STS4D | 8 | 30 | 2W | 1 | FET General Purpose Power | 11 ns | 100ns | 22 ns | 25 ns | 4A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1V | 2W Tc | 4A | 30V | N-Channel | 330pF @ 25V | 55m Ω @ 2A, 10V | 1V @ 250μA | 4A Tc | 9nC @ 5V | Schottky Diode (Isolated) | 5V 10V | ±16V | |||||||||||||||||||||||||||
| STW20NB50 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw20nb50-datasheets-5413.pdf | 500V | 20A | TO-247-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | NOT SPECIFIED | STW20N | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 15ns | 25 ns | 20A | 30V | SILICON | SWITCHING | 250W Tc | TO-247AC | 80A | 0.25Ohm | 75 pF | 1000 mJ | 500V | N-Channel | 4700pF @ 25V | 57ns | 250m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| STB200NF04-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp200nf04-datasheets-6250.pdf | 40V | 120A | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | STB200N | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 320ns | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 310W Tc | 480A | 0.0037Ohm | 1300 mJ | N-Channel | 5100pF @ 25V | 3.7m Ω @ 90A, 10V | 4V @ 250μA | 120A Tc | 210nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STT4PF20V | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stt4pf20v-datasheets-5415.pdf | -20V | -3A | SOT-23-6 | 6 | 6 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | STT4P | 6 | NOT SPECIFIED | 1.6W | 1 | Other Transistors | Not Qualified | 39ns | 39 ns | 54 ns | 3A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.6W Tc | 3A | 0.135Ohm | 20V | P-Channel | 500pF @ 15V | 110m Ω @ 1.5A, 4.5V | 600mV @ 250μA | 3A Tc | 7.8nC @ 4.5V | 2.7V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||
| STP6NB90 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp6nb90-datasheets-5391.pdf | 900V | 5.8A | TO-220-3 | Lead Free | 3 | EAR99 | HIGH VOLTAGE | No | e0 | Tin/Lead (Sn/Pb) | STP6N | 3 | Single | 135W | 1 | FET General Purpose Power | R-PSFM-T3 | 20 ns | 10ns | 15 ns | 5.8A | 30V | SILICON | SWITCHING | 135W Tc | TO-220AB | 23A | 2Ohm | 250 mJ | 900V | N-Channel | 1400pF @ 25V | 2 Ω @ 3A, 10V | 5V @ 250μA | 5.8A Tc | 55nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STW15NB50 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw15nb50-datasheets-5342.pdf | 500V | 14.6A | TO-247-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | STW15N | 3 | Single | NOT SPECIFIED | 190W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 14ns | 25 ns | 14.6A | 30V | SILICON | SWITCHING | 190W Tc | TO-247AC | 58.4A | 0.36Ohm | 850 mJ | 500V | N-Channel | 3400pF @ 25V | 360m Ω @ 7.5A, 10V | 5V @ 250μA | 14.6A Tc | 80nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRF540 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-irf540-datasheets-5346.pdf | 100V | 22A | TO-220-3 | Contains Lead | 3 | EAR99 | 33A | not_compliant | e3 | Matte Tin (Sn) | 100V | NOT SPECIFIED | IRF5 | 3 | Single | NOT SPECIFIED | 85W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 45ns | 20 ns | 50 ns | 22A | 20V | SILICON | SWITCHING | 85W Tc | TO-220AB | 0.077Ohm | 220 mJ | 100V | N-Channel | 870pF @ 25V | 230ns | 77m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| 2N7000 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-2n7002-datasheets-5343.pdf | 60V | 200mA | TO-226-3, TO-92-3 (TO-226AA) | 4.95mm | 4.95mm | 3.94mm | Lead Free | 3 | No SVHC | 5.3Ohm | 3 | 1.27mm | yes | EAR99 | LOW THRESHOLD | Tin | unknown | e3 | BOTTOM | NOT SPECIFIED | 2N70 | 3 | Single | NOT SPECIFIED | 1W | 1 | FET General Purpose Power | Not Qualified | 5 ns | 15ns | 8 ns | 7 ns | 350mA | 18V | 60V | SILICON | SWITCHING | 2.1V | 1W Tc | 60V | N-Channel | 43pF @ 25V | 2.1 V | 5 Ω @ 500mA, 10V | 3V @ 250μA | 350mA Tc | 2nC @ 5V | 4.5V 10V | ±18V | ||||||||||||||||||||||||||
| STP45NE06 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp45ne06-datasheets-5352.pdf | TO-220-3 | Contains Lead | 3 | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | STP45N | 3 | Single | 100W | 1 | FET General Purpose Power | R-PSFM-T3 | 100ns | 45 ns | 45A | 20V | SILICON | SWITCHING | 100W Tc | TO-220AB | 180A | 0.028Ohm | 150 mJ | 60V | N-Channel | 3600pF @ 25V | 28m Ω @ 22.5A, 10V | 4V @ 250μA | 45A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STD50NH02LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std50nh02lt4-datasheets-5341.pdf | 24V | 50A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | EAR99 | No | STD50N | 3 | Single | 60W | 10 ns | 130ns | 16 ns | 27 ns | 50A | 20V | 60W Tc | 24V | N-Channel | 1400pF @ 25V | 10.5m Ω @ 25A, 10V | 1.8V @ 250μA | 50A Tc | 24nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-2n7002-datasheets-5343.pdf | 60V | 115mA | TO-236-3, SC-59, SOT-23-3 | 3.03mm | 1.2mm | 3.05mm | Lead Free | 3 | 4.535924g | No SVHC | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 260 | 2N70 | 3 | Single | 30 | 350mW | 1 | FET General Purpose Power | 5 ns | 15ns | 15 ns | 7 ns | 200mA | 18V | 60V | SILICON | SWITCHING | 2.1V | 350mW Tc | 0.2A | 60V | N-Channel | 43pF @ 25V | 2.1 V | 5 Ω @ 500mA, 10V | 3V @ 250μA | 200mA Tc | 2nC @ 5V | 4.5V 10V | ±18V | ||||||||||||||||||||||||||
| IRF740 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ II | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-irf740-datasheets-5360.pdf | 400V | 10A | TO-220-3 | Contains Lead | 3 | EAR99 | HIGH VOLTAGE, FAST SWITCHING | 105A | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | 400V | NOT SPECIFIED | IRF7 | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 10ns | 10A | 20V | SILICON | SWITCHING | 125W Tc | TO-220AB | 0.55Ohm | 120 pF | 520 mJ | 400V | N-Channel | 1400pF @ 25V | 196ns | 79ns | 550m Ω @ 5.3A, 10V | 4V @ 250μA | 10A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| STP5NB40 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp5nb40-datasheets-5376.pdf | 400V | 4.7A | TO-220-3 | Contains Lead | 3 | e3 | Matte Tin (Sn) | STP5N | 3 | Single | 80W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 8ns | 6 ns | 4.7A | 30V | SILICON | SWITCHING | 80W Tc | TO-220AB | 19A | 200 mJ | 400V | N-Channel | 405pF @ 25V | 1.8 Ω @ 2.3A, 10V | 5V @ 250μA | 4.7A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRF730 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-irf730-datasheets-5377.pdf | 400V | 5.5A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | HIGH VOLTAGE, FAST SWITCHING | No | 55A | e3 | Matte Tin (Sn) | 400V | IRF7 | 3 | Single | 100W | 1 | FET General Purpose Power | 11ns | 9 ns | 15 ns | 5.5A | 20V | SILICON | SWITCHING | 100W Tc | TO-220AB | 1Ohm | 65 pF | 400V | N-Channel | 530pF @ 25V | 1 Ω @ 3A, 10V | 4V @ 250μA | 5.5A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF620 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ II | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-irf620-datasheets-5380.pdf | 200V | 6A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | FAST SWITCHING | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | IRF6 | 3 | Single | NOT SPECIFIED | 70W | 1 | FET General Purpose Power | Not Qualified | 30ns | 6A | 20V | SILICON | SWITCHING | 4V | 70W Tc | TO-220AB | 6A | 24A | 0.8Ohm | 80 pF | 200V | N-Channel | 350pF @ 25V | 800m Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STW11NB80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw11nb80-datasheets-5382.pdf | 800V | 11A | TO-247-3 | Contains Lead | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | STW11N | 3 | Single | NOT SPECIFIED | 190W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 13ns | 23 ns | 11A | 30V | SILICON | SWITCHING | 190W Tc | 44A | 0.8Ohm | 500 mJ | 800V | N-Channel | 2900pF @ 25V | 800m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STD30PF03LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | -30V | -24A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 4.535924g | No SVHC | 28mOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | STD30 | 3 | Single | 30 | 70W | 1 | Other Transistors | R-PSSO-G2 | 64 ns | 122ns | 26 ns | 36 ns | 24A | 16V | SILICON | SWITCHING | 30V | -1V | 70W Tc | TO-252AA | 96A | 850 mJ | -30V | P-Channel | 1670pF @ 25V | 1 V | 28m Ω @ 12A, 10V | 1V @ 250μA | 24A Tc | 28nC @ 5V | 5V 10V | ±16V | ||||||||||||||||||||||||||
| HUF76645S3S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf76645p3-datasheets-4289.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 310W Tc | 75A | 0.015Ohm | N-Channel | 4.4pF @ 25V | 14m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 153nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF640 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MESH OVERLAY™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-irf640-datasheets-5330.pdf | 200V | 18A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | IRF6 | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | 27ns | 25 ns | 18A | 20V | SILICON | SWITCHING | 125W Tc | TO-220AB | 72A | 280 mJ | 200V | N-Channel | 1560pF @ 25V | 180m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 72nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STS25NH3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts25nh3ll-datasheets-5337.pdf | 30V | 25A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.25mm | 4mm | Lead Free | 8 | No SVHC | 3.5MOhm | 8 | EAR99 | unknown | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | STS25 | 8 | Single | 30 | 3.2W | 1 | FET General Purpose Power | Not Qualified | 18 ns | 50ns | 8 ns | 75 ns | 25A | 18V | SILICON | SWITCHING | 1V | 3.2W Tc | 30V | N-Channel | 4450pF @ 25V | 3.5m Ω @ 12.5A, 10V | 1V @ 250μA | 25A Tc | 40nC @ 4.5V | 4.5V 10V | ±18V | ||||||||||||||||||||||||||||||
| STP50NE08 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp50ne08-datasheets-5340.pdf | 80V | 50A | TO-220-3 | Contains Lead | 3 | EAR99 | e3 | TIN | NOT SPECIFIED | STP50N | 3 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 95ns | 30 ns | 50A | 20V | SILICON | SWITCHING | 150W Tc | TO-220AB | 200A | 0.024Ohm | 300 mJ | 80V | N-Channel | 5100pF @ 25V | 24m Ω @ 25A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF520 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-irf520-datasheets-5314.pdf | TO-220-3 | 3 | EAR99 | FAST SWITCHING | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | IRF5 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 60W Tc | TO-220AB | 10A | 40A | 0.27Ohm | 100 pF | 100 mJ | N-Channel | 460pF @ 25V | 50ns | 115ns | 270m Ω @ 7A, 10V | 4V @ 250μA | 10A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STW80NE06-10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw80ne0610-datasheets-5315.pdf | 60V | 80A | TO-247-3 | Contains Lead | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | NOT SPECIFIED | STW80N | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 150ns | 75 ns | 80A | 20V | SILICON | SWITCHING | 250W Tc | 320A | 0.01Ohm | 350 mJ | 60V | N-Channel | 7600pF @ 25V | 10m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 189nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STP4NB100 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp4nb100-datasheets-5316.pdf | 1kV | 3.8A | TO-220-3 | Contains Lead | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STP4N | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 9ns | 12 ns | 3.8A | 30V | SILICON | SWITCHING | 1000V | 125W Tc | TO-220AB | 360 mJ | 1kV | N-Channel | 1400pF @ 25V | 4.4 Ω @ 2A, 10V | 5V @ 250μA | 3.8A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STP12PF06 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp12pf06-datasheets-5317.pdf | -60V | -12A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 4.535924g | No SVHC | 200mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | STP12 | 3 | Single | 60W | 1 | Other Transistors | 20 ns | 40ns | 10 ns | 40 ns | 12A | 20V | 60V | SILICON | SWITCHING | 3.4V | 60W Tc | TO-220AB | 48A | 200 mJ | -60V | P-Channel | 850pF @ 25V | 3.4 V | 200m Ω @ 10A, 10V | 4V @ 250μA | 12A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IRF530 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-irf530-datasheets-5319.pdf | 100V | 14A | TO-220-3 | Contains Lead | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | IRF5 | 3 | Single | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 25ns | 8 ns | 32 ns | 14A | 20V | SILICON | SWITCHING | 60W Tc | TO-220AB | 56A | 70 mJ | 100V | N-Channel | 458pF @ 25V | 160m Ω @ 7A, 10V | 4V @ 250μA | 14A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STW13NB60 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw13nb60-datasheets-5320.pdf | 600V | 13A | TO-247-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | NOT SPECIFIED | STW13N | 3 | Single | NOT SPECIFIED | 190W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 13ns | 15 ns | 13A | 30V | SILICON | SWITCHING | 190W Tc | 52A | 0.54Ohm | 700 mJ | 600V | N-Channel | 2600pF @ 25V | 540m Ω @ 6.5A, 10V | 5V @ 250μA | 13A Tc | 82nC @ 10V | 10V | ±30V |
