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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF840 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ II | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-irf840-datasheets-5290.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | IRF8 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 125W Tc | TO-220AB | 8A | 32A | 0.85Ohm | 110 pF | 520 mJ | N-Channel | 832pF @ 25V | 125ns | 93ns | 850m Ω @ 3.5A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STP19NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb19nm65n-datasheets-1057.pdf | TO-220-3 | Lead Free | 3 | 270mOhm | EAR99 | No | e3 | Tin (Sn) | STP19N | 3 | Single | 150W | 1 | FET General Purpose Power | R-PSFM-T3 | 25 ns | 8ns | 26 ns | 80 ns | 15.5A | 25V | SILICON | SWITCHING | 150W Tc | TO-220AB | 62A | 400 mJ | 650V | N-Channel | 1900pF @ 50V | 270m Ω @ 7.75A, 10V | 4V @ 250μA | 15.5A Tc | 55nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| STF7NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp7nm50n-datasheets-5219.pdf | TO-220-3 Full Pack | Lead Free | 3 | No SVHC | 780mOhm | 3 | EAR99 | unknown | NOT SPECIFIED | STF7N | 3 | Single | NOT SPECIFIED | 20W | 1 | FET General Purpose Power | Not Qualified | 5ns | 9 ns | 40 ns | 2.5A | 25V | 500V | SILICON | ISOLATED | SWITCHING | 20W Tc | TO-220AB | 5A | 20A | 100 mJ | 500V | N-Channel | 400pF @ 50V | 3 V | 780m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 12nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||
| STP24NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | Lead Free | 3 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STP24N | 3 | Single | NOT SPECIFIED | 160W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 10ns | 20 ns | 80 ns | 19A | 25V | SILICON | SWITCHING | 160W Tc | TO-220AB | 76A | 0.19Ohm | 500 mJ | 650V | N-Channel | 2500pF @ 50V | 190m Ω @ 9.5A, 10V | 4V @ 250μA | 19A Tc | 70nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| 2SK3745LS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk3746-datasheets-6828.pdf | TO-220-3 Full Pack | TO-220FI(LS) | 1500V | 2W Ta 35W Tc | N-Channel | 380pF @ 30V | 13Ohm @ 1A, 10V | 2A Ta | 37.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9E3R2-40B,127 | Rochester Electronics, LLC | $2.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-buk9e4r480e127-datasheets-5130.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK | 40V | 300W Tc | N-Channel | 10.502pF @ 25V | 2.8mOhm @ 25A, 10V | 2V @ 1mA | 100A Tc | 94nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF230 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf720-datasheets-5535.pdf | 2 | no | e0 | TIN LEAD | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | TO-204AA | 9A | 36A | 0.4Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL100NH3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl100nh3ll-datasheets-5233.pdf | 30V | 100A | 8-PowerVDFN | Lead Free | 5 | No SVHC | 3.5mOhm | 8 | EAR99 | e3 | MATTE TIN | DUAL | NO LEAD | 260 | STL100 | 8 | 30 | 80W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-N5 | 50ns | 8 ns | 75 ns | 100A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 80W Tc | 25A | 30V | N-Channel | 4450pF @ 25V | 3.5m Ω @ 12.5A, 10V | 2.5V @ 250μA | 100A Tc | 40nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||
| C3M0075120J-TR | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | SiCFET (Silicon Carbide) | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 16 Weeks | 1200V | 113.6W Tc | N-Channel | 1350pF @ 1000V | 90m Ω @ 20A, 15V | 4V @ 5mA | 30A Tc | 51nC @ 15V | 15V | +15V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75652G3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76429d3st-datasheets-7924.pdf | TO-247-3 | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 515W Tc | 75A | 0.008Ohm | N-Channel | 7.585pF @ 25V | 8m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 475nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STN5PF02V | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stn5pf02v-datasheets-5210.pdf | -20V | -5A | TO-261-4, TO-261AA | Lead Free | 4 | EAR99 | No | 42A | e3 | Matte Tin (Sn) | 20V | DUAL | GULL WING | 260 | STN5P | 4 | Single | 40 | 2.5W | 1 | Other Transistors | R-PDSO-G4 | 11 ns | 47ns | 20 ns | 38 ns | 4.2A | 8V | SILICON | DRAIN | SWITCHING | 2.5W Tc | 0.1Ohm | -20V | P-Channel | 412pF @ 15V | 80m Ω @ 2.1A, 4.5V | 450mV @ 250μA | 4.2A Tc | 6nC @ 2.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| STP23NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp23nm60n-datasheets-5241.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STP23N | 3 | Single | NOT SPECIFIED | 35W | 1 | FET General Purpose Power | Not Qualified | 15ns | 36 ns | 90 ns | 9.5A | 25V | SILICON | SWITCHING | 150W Tc | TO-220AB | 19A | 76A | 0.18Ohm | 700 mJ | 600V | N-Channel | 2050pF @ 50V | 180m Ω @ 9.5A, 10V | 4V @ 250μA | 19A Tc | 60nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| NTP5860NLG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nvb5860nlt4g-datasheets-5136.pdf | TO-220-3 | TO-220AB | 60V | 283W Tc | N-Channel | 10.76pF @ 25V | 3mOhm @ 75A, 10V | 4V @ 250μA | 220A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STK38N3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stk38n3llh5-datasheets-5217.pdf | PolarPak® | 10 | No SVHC | 10 | EAR99 | e3 | MATTE TIN | DUAL | NO LEAD | STK38 | 10 | Single | 5.2W | 1 | FET General Purpose Power | Not Qualified | 38A | 22V | SILICON | SOURCE | SWITCHING | 2.5V | 5.2W Tc | 0.0026Ohm | 30V | N-Channel | 4640pF @ 25V | 1.55m Ω @ 19A, 10V | 2.5V @ 250μA | 38A Tc | 41.7nC @ 4.5V | 4.5V 10V | ±22V | |||||||||||||||||||||||||||||||||||||||||||
| C3M0065100J-TR | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | SiCFET (Silicon Carbide) | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 16 Weeks | 1000V | 113.5W Tc | N-Channel | 660pF @ 600V | 78m Ω @ 20A, 15V | 3.5V @ 5mA | 35A Tc | 35nC @ 15V | 15V | +15V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB25NM50N-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb25nm50n1-datasheets-5249.pdf | 500V | 22A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 140mOhm | 3 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STB25N | 3 | Single | NOT SPECIFIED | 160W | 1 | FET General Purpose Power | Not Qualified | 23ns | 22 ns | 75 ns | 22A | 25V | SILICON | SWITCHING | 160W Tc | 88A | 500V | N-Channel | 2565pF @ 25V | 140m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 84nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| STP21NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp21nm60nd-datasheets-0407.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 220mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STP21N | 3 | Single | 140W | 1 | FET General Purpose Power | 18 ns | 16ns | 48 ns | 70 ns | 17A | 25V | SILICON | SWITCHING | 4V | 140W Tc | TO-220AB | 68A | 600V | N-Channel | 1800pF @ 50V | 220m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 60nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| BUK761R4-30E,118 | Rochester Electronics, LLC | $1.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-buk788055135-datasheets-4698.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 30V | 324W Tc | N-Channel | 9.58pF @ 25V | 1.45mOhm @ 25A, 10V | 4V @ 1mA | 120A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB52N10 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd20n06lg-datasheets-2345.pdf | 2 | no | e0 | TIN LEAD | YES | SINGLE | GULL WING | 235 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 100V | METAL-OXIDE SEMICONDUCTOR | 52A | 156A | 0.03Ohm | 800 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-irfl4310pbf-datasheets-5350.pdf | TO-220-3 | 3 | no | unknown | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 125W Tc | TO-220AB | 8A | 32A | 0.85Ohm | N-Channel | 1.3pF @ 25V | 850m Ω @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BUK7E1R6-30E,127 | Rochester Electronics, LLC | $1.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-buk950440a127-datasheets-4994.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK | 30V | 349W Tc | N-Channel | 11.96pF @ 25V | 1.6mOhm @ 25A, 10V | 4V @ 1mA | 120A Tc | 154nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9E2R3-40E,127 | Rochester Electronics, LLC | $1.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-buk9e3r240e127-datasheets-5014.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK | 40V | 293W Tc | N-Channel | 13.16pF @ 25V | 2.2mOhm @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 87.8nC @ 5V | 5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STQ3NK50ZR-AP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std3nk50z1-datasheets-6661.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | BOTTOM | NOT SPECIFIED | STQ3 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 500mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 3W Tc | 0.5A | 2A | 120 mJ | N-Channel | 280pF @ 25V | 3.3 Ω @ 1.15A, 10V | 4.5V @ 50μA | 500mA Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| STP6NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp6nm60n-datasheets-5176.pdf | TO-220-3 | Lead Free | 3 | 920mOhm | EAR99 | No | e3 | Matte Tin (Sn) | STP6N | 3 | Single | 45W | 1 | FET General Purpose Power | R-PSFM-T3 | 8ns | 9 ns | 40 ns | 4.6A | 25V | SILICON | SWITCHING | 45W Tc | TO-220AB | 65 mJ | 600V | N-Channel | 420pF @ 50V | 920m Ω @ 2.3A, 10V | 4V @ 250μA | 4.6A Tc | 13nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| 2SK3510-AZ | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk3634az-datasheets-7351.pdf | TO-220-3 | TO-220AB | 75V | 1.5W Ta 125W Tc | N-Channel | 8500pF @ 10V | 8.5mOhm @ 42A, 10V | 83A Tc | 150nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6678TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | 30V | 30A | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | No SVHC | 5 | EAR99 | No | BOTTOM | 260 | 40 | 89W | 1 | R-XBCC-N3 | 21 ns | 71ns | 8.1 ns | 27 ns | 24A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 240A | 0.0022Ohm | 210 mJ | 30V | N-Channel | 5640pF @ 15V | 2.25 V | 2.2m Ω @ 30A, 10V | 2.25V @ 250μA | 30A Ta 150A Tc | 65nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STB20NM50-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp20nm50-datasheets-1802.pdf | 550V | 20A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 200mOhm | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STB20N | 3 | Single | NOT SPECIFIED | 192W | 1 | FET General Purpose Power | Not Qualified | 16ns | 8.5 ns | 9 ns | 20A | 30V | SILICON | SWITCHING | 192W Tc | 80A | 650 mJ | 500V | N-Channel | 1480pF @ 25V | 250m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STW25NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw25nm60n-datasheets-5206.pdf | 600V | 20A | TO-247-3 | Lead Free | 3 | No SVHC | 160mOhm | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STW25N | 3 | Single | NOT SPECIFIED | 160W | 1 | FET General Purpose Power | Not Qualified | 18ns | 24 ns | 94 ns | 21A | 25V | SILICON | SWITCHING | 3V | 160W Tc | 84A | 850 mJ | 600V | N-Channel | 2400pF @ 50V | 160m Ω @ 10.5A, 10V | 4V @ 250μA | 21A Tc | 84nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| BUK7E4R3-75C,127 | Rochester Electronics, LLC | $2.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-buk9510100b127-datasheets-4980.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK | 75V | 333W Tc | N-Channel | 11.659pF @ 25V | 4.3mOhm @ 25A, 10V | 4V @ 1mA | 100A Tc | 142nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STS5PF30L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts5pf30l-datasheets-0379.pdf | -30V | -5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.65mm | 4mm | Lead Free | 8 | No SVHC | 55mOhm | 8 | EAR99 | LOW THRESHOLD | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | STS5P | 8 | Single | 30 | 2.5W | 1 | Other Transistors | 25 ns | 35ns | 35 ns | 125 ns | 5A | 16V | SILICON | SWITCHING | 30V | 1.6V | 2.5W Tc | 5A | 20A | -30V | P-Channel | 1350pF @ 25V | 55m Ω @ 2.5A, 10V | 2.5V @ 250μA | 5A Tc | 16nC @ 5V | 4.5V 10V | ±16V |
