Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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NDF06N62ZG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nds9953a-datasheets-2330.pdf | TO-220-3 Full Pack | TO-220FP | 620V | 31W Tc | N-Channel | 923pF @ 25V | 1.2Ohm @ 3A, 10V | 4.5V @ 100μA | 6A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDFS2P753AZ | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdj129p-datasheets-4862.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 30V | 3.1W Ta | P-Channel | 455pF @ 15V | 115mOhm @ 3A, 10V | 3V @ 250μA | 3A Ta | 11nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDB8876 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb8876-datasheets-5176.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 70W Tc | 71A | 0.0103Ohm | 180 mJ | N-Channel | 1.7pF @ 15V | 8.5m Ω @ 40A, 10V | 2.5V @ 250μA | 71A Tc | 45nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
FDS7098N3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds7098n3-datasheets-5178.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | NOT SPECIFIED | YES | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta | 14A | 60A | 0.009Ohm | N-Channel | 1.587pF @ 15V | 9m Ω @ 14A, 10V | 3V @ 250μA | 14A Ta | 22nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
FDJ127P | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdj127p-datasheets-5180.pdf | SC75-6 FLMP | 6 | yes | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | FLAT | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-F6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 1.6W Ta | 4.1A | 16A | 0.06Ohm | P-Channel | 780pF @ 10V | 60m Ω @ 4.1A, 4.5V | 1.5V @ 250μA | 4.1A Ta | 10nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
IRF630 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf630-datasheets-5182.pdf | TO-220-3 | 3 | no | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | TO-220AB | 9A | 36A | 0.4Ohm | N-Channel | 800pF @ 25V | 400m Ω @ 5.4A, 10V | 4V @ 250μA | 9A Tc | 43nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||
FQU10N20TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqu10n20tu-datasheets-5184.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 2.5W Ta 51W Tc | 7.6A | 30.4A | 0.36Ohm | 180 mJ | N-Channel | 670pF @ 25V | 360m Ω @ 3.8A, 10V | 5V @ 250μA | 7.6A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
BSP299L6327HUSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bsp299l6327husa1-datasheets-5119.pdf | TO-261-4, TO-261AA | PG-SOT223-4 | 500V | 1.8W Ta | N-Channel | 400pF @ 25V | 4Ohm @ 400mA, 10V | 4V @ 1mA | 400mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH3707TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfh3707trpbf-datasheets-5107.pdf | 8-PowerVDFN | 3mm | 950μm | 3mm | Lead Free | 3 | 12 Weeks | No SVHC | 12.4MOhm | 8 | EAR99 | No | DUAL | 2.8W | 1 | S-PDSO-N3 | 7.8 ns | 10.2ns | 9.7 ns | 8.7 ns | 12mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.8W Ta | 12A | 96A | 13 mJ | 30V | N-Channel | 755pF @ 15V | 1.8 V | 12.4m Ω @ 12A, 10V | 2.35V @ 25μA | 12A Ta 29A Tc | 8.1nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
FDC699P | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdc699p-datasheets-5121.pdf | 6-SSOT Flat-lead, SuperSOT™-6 FLMP | 6 | unknown | NICKEL PALLADIUM GOLD | YES | DUAL | 6 | 1 | COMMERCIAL | R-PDSO-F6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 2W Ta | 7A | 40A | 0.022Ohm | P-Channel | 2.64pF @ 10V | 22m Ω @ 7A, 4.5V | 1.5V @ 250μA | 7A Ta | 38nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
BSP298L6327HUSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bsp298l6327husa1-datasheets-5123.pdf | TO-261-4, TO-261AA | PG-SOT223-4 | 400V | 1.8W Ta | N-Channel | 400pF @ 25V | 3Ohm @ 500mA, 10V | 4V @ 1mA | 500mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDB6030L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdr8508p-datasheets-2805.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 30 | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 52W Tc | 52A | 150A | 0.013Ohm | 180 mJ | N-Channel | 1.25pF @ 15V | 13m Ω @ 26A, 10V | 3V @ 250μA | 48A Ta | 18nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
BSP300L6327HUSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bsp300l6327husa1-datasheets-5130.pdf | TO-261-4, TO-261AA | PG-SOT223-4 | 800V | 1.8W Ta | N-Channel | 230pF @ 25V | 20Ohm @ 190mA, 10V | 4V @ 1mA | 190mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDW252P | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdw252p-datasheets-5142.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | yes | e3 | TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.3W Ta | 8.8A | 50A | 0.0125Ohm | P-Channel | 5.045pF @ 10V | 12.5m Ω @ 8.8A, 4.5V | 1.5V @ 250μA | 8.8A Ta | 66nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
IRF5801TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf5801trpbf-datasheets-5144.pdf | 200V | 600mA | SOT-23-6 Thin, TSOT-23-6 | 2.9972mm | 990.6μm | 1.7mm | Contains Lead | 6 | 12 Weeks | No SVHC | 2.2Ohm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 2W | 1 | FET General Purpose Power | 6.5 ns | 8ns | 19 ns | 8.8 ns | 600mA | 30V | 200V | SILICON | SWITCHING | 5.5V | 2W Ta | 4.8A | 9.9 mJ | 200V | N-Channel | 88pF @ 25V | 5.5 V | 2.2 Ω @ 360mA, 10V | 5.5V @ 250μA | 600mA Ta | 3.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
FQI2N90TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqi2n90tu-datasheets-5155.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 3.13W Ta 85W Tc | 2.2A | 8.8A | 170 mJ | N-Channel | 500pF @ 25V | 7.2 Ω @ 1.1A, 10V | 5V @ 250μA | 2.2A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
FQD7N10TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqi2n90tu-datasheets-5156.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2.5W Ta 25W Tc | 5.8A | 23.2A | 0.35Ohm | 50 mJ | N-Channel | 250pF @ 25V | 350m Ω @ 2.9A, 10V | 4V @ 250μA | 5.8A Tc | 7.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
NTMFS4C58NT1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 8-PowerTDFN | 5-DFN (5x6) (8-SOFL) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NDP4060 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndf03n60zg-datasheets-4323.pdf | TO-220-3 | TO-220-3 | 60V | 50W Tc | N-Channel | 450pF @ 25V | 100mOhm @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HUF76437S3S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf76437s3s-datasheets-5090.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 155W Tc | 71A | 0.017Ohm | N-Channel | 2.23pF @ 25V | 14m Ω @ 71A, 10V | 3V @ 250μA | 71A Tc | 71nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
AUIRFR120Z | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-auirfsl8408-datasheets-3515.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 100V | 35W Tc | N-Channel | 310pF @ 25V | 190mOhm @ 5.2A, 10V | 4V @ 25μA | 8.7A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010ZSPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf1010zspbf-datasheets-5094.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 55V | 140W Tc | N-Channel | 2.84pF @ 25V | 7.5mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FQD5N50TF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqi13n06tu-datasheets-4442.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | unknown | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 2.5W Ta 50W Tc | 3.5A | 14A | 300 mJ | N-Channel | 610pF @ 25V | 1.8 Ω @ 1.75A, 10V | 5V @ 250μA | 3.5A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
IRFU1010ZPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfu1010zpbf-datasheets-5046.pdf | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 55V | 140W Tc | N-Channel | 2.84pF @ 25V | 7.5mOhm @ 42A, 10V | 4V @ 100μA | 42A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RFD14N05L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rfd14n05l-datasheets-5117.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 48W Tc | 14A | 0.1Ohm | N-Channel | 670pF @ 25V | 100m Ω @ 14A, 5V | 2V @ 250μA | 14A Tc | 40nC @ 10V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
IRFTS9342TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfts9342trpbf-datasheets-5048.pdf | SOT-23-6 | Lead Free | 6 | 12 Weeks | No SVHC | 40MOhm | 6 | EAR99 | No | DUAL | GULL WING | 2W | 1 | Other Transistors | 4.6 ns | 13ns | 28 ns | 45 ns | 5.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -1.3V | 2W Ta | 30 ns | -30V | P-Channel | 595pF @ 25V | 40m Ω @ 5.8A, 10V | 2.4V @ 25μA | 5.8A Ta | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
IPD80N06S3-09 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipd80n06s309-datasheets-5059.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | ULTRA LOW RESISTANCE | unknown | MATTE TIN | YES | SINGLE | GULL WING | 4 | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 107W Tc | TO-252AA | 80A | 320A | 0.0084Ohm | 170 mJ | N-Channel | 6.1pF @ 25V | 8.4m Ω @ 40A, 10V | 4V @ 55μA | 80A Tc | 88nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRFS634B_FP001 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfs634bfp001-datasheets-5063.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 38W Tc | 8.1A | 32.4A | 0.45Ohm | 200 mJ | N-Channel | 1pF @ 25V | 450m Ω @ 4.05A, 10V | 4V @ 250μA | 8.1A Tc | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
FQB5N40TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb5n40tm-datasheets-5065.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 3.13W Ta 70W Tc | 4.5A | 18A | 290 mJ | N-Channel | 460pF @ 25V | 1.6 Ω @ 2.25A, 10V | 5V @ 250μA | 4.5A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
FQU4N25TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqu4n25tu-datasheets-5067.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 2.5W Ta 37W Tc | 3A | 12A | 52 mJ | N-Channel | 200pF @ 25V | 1.75 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 5.6nC @ 10V | 10V | ±30V |
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