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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NVMFSC0D9N04C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfsc0d9n04c-datasheets-5507.pdf | 8-PowerVDFN | 47 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) - annealed | 40V | 4.1W Ta 166W Tc | N-Channel | 6100pF @ 25V | 870μ Ω @ 50A, 10V | 3.5V @ 250μA | 48.9A Ta 313A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB10N50CFTM-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, QFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqb10n50cftmws-datasheets-5559.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 4 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 143W | 1 | FET General Purpose Power | R-PSSO-G2 | 10A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 143W Tc | 40A | 825 mJ | N-Channel | 2210pF @ 25V | 610m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| TPCA8045-H(T2L1,VM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 14 Weeks | 8 | yes | 2.8W | 1 | 46A | 20V | 40V | 1.6W Ta 45W Tc | N-Channel | 7540pF @ 10V | 3.6m Ω @ 23A, 10V | 2.3V @ 1mA | 46A Ta | 90nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6009JNJGTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-r6009jnjgtl-datasheets-5519.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 125W Tc | 9A | 27A | 0.585Ohm | 177 mJ | N-Channel | 645pF @ 100V | 585m Ω @ 4.5A, 15V | 7V @ 1.38mA | 9A Tc | 22nC @ 15V | 15V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| FDMS86181 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 1.1mm | 5 | 20 Weeks | 90mg | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 260 | 1 | Single | NOT SPECIFIED | 2.5W | 1 | 150°C | R-PDSO-F5 | 17 ns | 25 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.5W Ta 125W Tc | MO-240AA | 0.0042Ohm | 40 pF | 337 mJ | 100V | N-Channel | 4125pF @ 50V | 52ns | 49ns | 4.2m Ω @ 44A, 10V | 4V @ 250μA | 44A Ta 124A Tc | 59nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||
| FDP6670AL | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds2070n3-datasheets-4113.pdf | TO-220-3 | 3 | yes | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 68W Tc | TO-220AB | 80A | 240A | 0.0065Ohm | 114 mJ | N-Channel | 2.44pF @ 15V | 6.5m Ω @ 40A, 10V | 3V @ 250μA | 80A Ta | 33nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NDS9430A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-nds9430a-datasheets-5542.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.5W Ta | 5.3A | 0.05Ohm | P-Channel | 950pF @ 15V | 50m Ω @ 5.3A, 10V | 3V @ 250μA | 5.3A Ta | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIR880DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir880dpt1ge3-datasheets-5576.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | Tin | No | C BEND | 260 | 8 | 2 | Dual | 40 | 6.25W | 1 | R-PDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 6.25W Ta 104W Tc | 0.0067Ohm | 80V | N-Channel | 2440pF @ 40V | 1.2 V | 5.9m Ω @ 20A, 10V | 2.8V @ 250μA | 60A Tc | 74nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPB80N04S3H4ATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb80n04s3h4atma1-datasheets-5581.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 40V | 115W Tc | N-Channel | 3.9pF @ 25V | 4.5mOhm @ 80A, 10V | 4V @ 65μA | 80A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF19N10L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf19n10l-datasheets-5583.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 38W Tc | 13.6A | 54.4A | 0.11Ohm | 220 mJ | N-Channel | 870pF @ 25V | 100m Ω @ 6.8A, 10V | 2V @ 250μA | 13.6A Tc | 18nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPD30N03S2L07GBTMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spd30n03s2l07gbtma1-datasheets-5585.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 30V | 136W Tc | N-Channel | 2.53pF @ 25V | 6.7mOhm @ 30A, 10V | 2V @ 85μA | 30A Tc | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7738DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7738dpt1ge3-datasheets-5509.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Power | R-XDSO-C5 | 15 ns | 10ns | 10 ns | 25 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 4V | 5.4W Ta 96W Tc | 7.7A | 45 mJ | 150V | N-Channel | 2100pF @ 75V | 38m Ω @ 7.7A, 10V | 4V @ 250μA | 30A Tc | 53nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| BUZ31H3046XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-buz31h3046xksa1-datasheets-5590.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3-1 | 200V | 95W Tc | N-Channel | 1.12pF @ 25V | 200mOhm @ 9A, 5V | 4V @ 1mA | 14.5A Tc | 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDF08N60ZH | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndf08n60zh-datasheets-5592.pdf | TO-220-3 Full Pack | TO-220FP | 600V | 36W Tc | N-Channel | 1.37pF @ 25V | 950mOhm @ 3.5A, 10V | 4.5V @ 100μA | 8.4A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AONS66612 | Alpha & Omega Semiconductor Inc. | $2.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerVDFN | 18 Weeks | 60V | 6.2W Ta 208W Tc | N-Channel | 5300pF @ 30V | 1.65m Ω @ 20A, 10V | 3.5V @ 250μA | 46A Ta 100A Tc | 110nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4410DY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-sm72375mmenopb-datasheets-0812.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 10A | 0.0135Ohm | N-Channel | 1.35pF @ 15V | 13.5m Ω @ 10A, 10V | 1V @ 250μA | 10A Ta | 60nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TPW1R005PL,L1Q | Toshiba Semiconductor and Storage | $2.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 16 Weeks | 8 | 300A | 45V | 960mW Ta 170W Tc | N-Channel | 9600pF @ 22.5V | 2.4V @ 1mA | 300A Tc | 122nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDF08N50ZH | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nds9959-datasheets-9591.pdf | TO-220-3 Full Pack | TO-220FP | 500V | 35W Tc | N-Channel | 1.095pF @ 25V | 850mOhm @ 3.6A, 10V | 4.5V @ 100μA | 8.5A Tc | 46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB20AN06A0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb8876-datasheets-5177.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 90W Tc | 45A | 0.02Ohm | 50 mJ | N-Channel | 950pF @ 25V | 20m Ω @ 45A, 10V | 4V @ 250μA | 9A Ta 45A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDS7082N3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds9933-datasheets-2244.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta | 17.5A | 60A | 0.006Ohm | N-Channel | 2.271pF @ 15V | 6m Ω @ 17.5A, 10V | 3V @ 250μA | 17.5A Ta | 53nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDPF12N35 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds3670-datasheets-3039.pdf | TO-220-3 Full Pack | 3 | yes | AVALANCHE RATED | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 350V | 350V | 31.3W Tc | TO-220AB | 12A | 48A | 0.38Ohm | 335 mJ | N-Channel | 1.11pF @ 25V | 380m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| NTP75N03R | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntb75n03rt4g-datasheets-5016.pdf | TO-220-3 | 3 | yes | e0 | TIN LEAD | NO | SINGLE | 240 | 3 | 30 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 1.25W Ta 74.4W Tc | TO-220AB | 75A | 225A | 0.013Ohm | 71.7 mJ | N-Channel | 1.333pF @ 20V | 8m Ω @ 20A, 10V | 2V @ 250μA | 9.7A Ta | 13.2nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDS8874 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds8874-datasheets-5461.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 16A | 0.0055Ohm | 265 mJ | N-Channel | 3.99pF @ 15V | 5.5m Ω @ 16A, 10V | 2.5V @ 250μA | 16A Ta | 72nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| CSD25401Q3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-csd25401q3-datasheets-5463.pdf | 8-PowerTDFN | 8-VSON-CLIP (3.3x3.3) | 20V | 2.8W Ta | P-Channel | 1.4pF @ 10V | 11.7mOhm @ 10A, 4.5V | 1.2V @ 250μA | 14A Ta 60A Tc | 12.3nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDW262P | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdw262p-datasheets-5465.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | yes | unknown | e3 | TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.3W Ta | 4.5A | 0.047Ohm | P-Channel | 1.193pF @ 10V | 47m Ω @ 4.5A, 4.5V | 1.5V @ 250μA | 4.5A Ta | 18nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| IRF820 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf820-datasheets-5477.pdf | TO-220-3 | 3 | unknown | NO | SINGLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 50W Tc | TO-220AB | 2.5A | 8A | 3Ohm | N-Channel | 360pF @ 25V | 3 Ω @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R600C6XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp60r600c6xksa1-datasheets-5479.pdf | TO-220-3 | PG-TO220-3 | 600V | 63W Tc | N-Channel | 440pF @ 100V | 600mOhm @ 2.4A, 10V | 3.5V @ 200μA | 7.3A Tc | 20.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD2N90TF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd2n90tf-datasheets-5481.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900V | 900V | 2.5W Ta 50W Tc | 1.7A | 6.8A | 170 mJ | N-Channel | 500pF @ 25V | 7.2 Ω @ 850mA, 10V | 5V @ 250μA | 1.7A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| NTMFS4119NT3G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntms3p03r2g-datasheets-4254.pdf | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 30V | 900mW Ta | N-Channel | 4.8pF @ 24V | 3.5mOhm @ 29A, 10V | 2.5V @ 250μA | 11A Ta | 60nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFR9110TF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-sfr9110tf-datasheets-5485.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2.5W Ta 20W Tc | 2.8A | 11A | 31 mJ | P-Channel | 335pF @ 25V | 1.2 Ω @ 1.4A, 10V | 4V @ 250μA | 2.8A Tc | 10nC @ 10V | 10V | ±30V |
