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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQI3N25TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqi3n25tu-datasheets-4308.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 3.13W Ta 45W Tc | 2.8A | 11.2A | 40 mJ | N-Channel | 170pF @ 25V | 2.2 Ω @ 1.4A, 10V | 5V @ 250μA | 2.8A Tc | 5.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4839NHT3G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntmfs4839nht3g-datasheets-4310.pdf | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 30V | 870mW Ta 42.4W Tc | N-Channel | 2.354pF @ 12V | 5.5mOhm @ 30A, 10V | 2.5V @ 250μA | 9.5A Ta 64A Tc | 43.5nC @ 11.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP13N06 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp4n90-datasheets-2736.pdf | TO-220-3 | 3 | yes | FAST SWITCHING | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 45W Tc | TO-220AB | 13A | 52A | 0.135Ohm | 85 mJ | N-Channel | 310pF @ 25V | 135m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 7.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| FQI5N20TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqi5n20tu-datasheets-4318.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 3.13W Ta 52W Tc | 4.5A | 18A | 60 mJ | N-Channel | 270pF @ 25V | 1.2 Ω @ 2.25A, 10V | 5V @ 250μA | 4.5A Tc | 7.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4847NAT1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntmfs4847nt1g-datasheets-4301.pdf | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 30V | 880mW Ta 48.4W Tc | N-Channel | 2.614pF @ 12V | 4.1mOhm @ 30A, 10V | 2.5V @ 250μA | 11.5A Ta 85A Tc | 28nC @ 4.5V | 4.5V 11.5V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDF03N60ZG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nds8934-datasheets-2334.pdf | TO-220-3 Full Pack | TO-220FP | 600V | 27W Tc | N-Channel | 372pF @ 25V | 3.6Ohm @ 1.2A, 10V | 4.5V @ 50μA | 3.1A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4856N-35G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd50n03r35g-datasheets-2016.pdf | TO-251-3 Stub Leads, IPak | 3 | yes | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 1.33W Ta 60W Tc | 13.3A | 179A | 0.0068Ohm | 180.5 mJ | N-Channel | 2.241pF @ 12V | 4.7m Ω @ 30A, 10V | 2.5V @ 250μA | 13.3A Ta 89A Tc | 27nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDMC8884 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdmc8884-datasheets-4291.pdf | 8-PowerWDFN | 8-MLP (3.3x3.3) | 30V | 2.3W Ta 18W Tc | N-Channel | 685pF @ 15V | 19mOhm @ 9A, 10V | 2.5V @ 250μA | 9A Ta 15A Tc | 14nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHD2110TT1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntljd2105ltbg-datasheets-2753.pdf | 8-SMD, Flat Lead | 8 | yes | unknown | e3 | TIN | YES | DUAL | C BEND | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-C8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 1.1W Ta | 4.5A | 0.04Ohm | P-Channel | 1.072pF @ 6V | 40m Ω @ 6.4A, 4.5V | 850mV @ 250μA | 4.5A Ta | 14nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| NTMS3P03R2G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntms3p03r2g-datasheets-4253.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | no | AVALANCHE RATED | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | 40 | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 730mW Ta | 2.34A | 0.085Ohm | 135 pF | P-Channel | 750pF @ 24V | 85m Ω @ 3.05A, 10V | 2.5V @ 250μA | 2.34A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQD630TF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd630tf-datasheets-4295.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 2.5W Ta 46W Tc | 7A | 28A | 0.4Ohm | 163 mJ | N-Channel | 550pF @ 25V | 400m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 25nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| FQD3N30TF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd3n30tf-datasheets-4255.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | unknown | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 2.5W Ta 30W Tc | 2.4A | 9.6A | 140 mJ | N-Channel | 230pF @ 25V | 2.2 Ω @ 1.2A, 10V | 5V @ 250μA | 2.4A Tc | 7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| NDB603AL | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndb603al-datasheets-4257.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | unknown | e0 | TIN LEAD | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 50W Tc | 25A | 100A | 0.022Ohm | 100 mJ | N-Channel | 1.1pF @ 15V | 22m Ω @ 25A, 10V | 3V @ 250μA | 25A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTD18N06T4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd18n06t4g-datasheets-4264.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.1W Ta 55W Tj | 18A | 54A | 0.06Ohm | 72 mJ | N-Channel | 710pF @ 25V | 60m Ω @ 9A, 10V | 4V @ 250μA | 18A Ta | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQB7N10TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb7n10tm-datasheets-4266.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.75W Ta 40W Tc | 7.3A | 29.2A | 0.35Ohm | 50 mJ | N-Channel | 250pF @ 25V | 350m Ω @ 3.65A, 10V | 4V @ 250μA | 7.3A Tc | 7.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| FQT4N20TF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqt4n20tf-datasheets-4268.pdf | TO-261-4, TO-261AA | 4 | yes | unknown | NOT SPECIFIED | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 2.2W Tc | 0.85A | 3.4A | 52 mJ | N-Channel | 220pF @ 25V | 1.4 Ω @ 425mA, 10V | 5V @ 250μA | 850mA Tc | 6.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| NTD4855NT4G | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-ntd4855nt4g-datasheets-4270.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 1.35W Ta 66.7W Tc | 14A | 197A | 0.006Ohm | 220 mJ | N-Channel | 2.95pF @ 12V | 4.3m Ω @ 30A, 10V | 2.5V @ 250μA | 14A Ta 98A Tc | 32.7nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTD4805N-35G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd4805n35g-datasheets-4272.pdf | TO-251-3 Stub Leads, IPak | I-PAK | 30V | 1.41W Ta 79W Tc | N-Channel | 2.865pF @ 12V | 5mOhm @ 30A, 10V | 2.5V @ 250μA | 12.7A Ta 95A Tc | 48nC @ 11.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB60NF06LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb60nf06lt4-datasheets-4147.pdf | 60V | 60A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 12 Weeks | 4.535924g | No SVHC | 16mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | LOW THRESHOLD, AVALANCHE RATED | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB60N | 3 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 35 ns | 220ns | 30 ns | 55 ns | 60A | 15V | SILICON | DRAIN | SWITCHING | 1V | 110W Tc | 240A | 60V | N-Channel | 2000pF @ 25V | 14m Ω @ 30A, 10V | 1V @ 250μA | 60A Tc | 66nC @ 4.5V | 5V 10V | ±15V | ||||||||||||||||||||||||
| NDD03N50Z-1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndd03n50z1g-datasheets-4283.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 500V | 58W Tc | N-Channel | 274pF @ 25V | 3.3Ohm @ 1.15A, 10V | 4.5V @ 50μA | 2.6A Tc | 10nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0368DPA-00#J0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-PowerWDFN | 8-WPAK | 30V | 25W Tc | N-Channel | 730pF @ 10V | 14.3mOhm @ 10A, 10V | 2.5V @ 1mA | 20A Ta | 6.2nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ465EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj465ept1ge3-datasheets-3752.pdf | PowerPAK® SO-8 | 12 Weeks | 5 | No | 1 | Single | 45W | 1 | PowerPAK® SO-8 | 11 ns | 13ns | 8 ns | 36 ns | 8A | 20V | 60V | 45W Tc | 85mOhm | P-Channel | 1140pF @ 30V | 85mOhm @ 3.5A, 10V, 1.17mOhm @ 20A, 10V | 2.5V @ 250μA | 8A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQP9N15 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp9n15-datasheets-4287.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 75W Tc | TO-220AB | 9A | 36A | 0.4Ohm | 80 mJ | N-Channel | 410pF @ 25V | 400m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 13nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| NTD4856N-1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd50n03r35g-datasheets-2016.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 1.33W Ta 60W Tc | 13.3A | 179A | 0.0068Ohm | 180.5 mJ | N-Channel | 2.241pF @ 12V | 4.7m Ω @ 30A, 10V | 2.5V @ 250μA | 13.3A Ta 89A Tc | 27nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STD10P6F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf10p6f6-datasheets-4433.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | No SVHC | 180MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | GULL WING | STD10 | Single | 35W | 1 | R-PSSO-G2 | 7ns | 10 ns | 16.5 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | -4V | 35W Tc | 40A | 80 mJ | 60V | P-Channel | 340pF @ 48V | 160m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 6.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STD3LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std3ln80k5-datasheets-4035.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STD3L | 800V | 45W Tc | N-Channel | 102pF @ 100V | 3.25 Ω @ 1A, 10V | 5V @ 100μA | 2A Tc | 2.63nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7463ADP-T1-GE3 | Vishay Siliconix | $90.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7463adpt1ge3-datasheets-4096.pdf | PowerPAK® SO-8 | 1.12mm | Lead Free | 5 | 14 Weeks | No SVHC | 8 | EAR99 | Tin | No | e3 | DUAL | C BEND | 8 | 1 | 5W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 15 ns | 14ns | 11 ns | 56 ns | -16.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | -2.3V | 5W Ta 39W Tc | 46A | 70A | 45 mJ | -40V | P-Channel | 4150pF @ 20V | 10m Ω @ 15A, 10V | 2.3V @ 250μA | 46A Tc | 144nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| RQ3E150MNTB1 | ROHM Semiconductor | $9.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 8-PowerVDFN | 5 | 20 Weeks | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2W Ta | 60A | N-Channel | 1100pF @ 15V | 6.7m Ω @ 15A, 10V | 2.5V @ 1mA | 15A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| RD3T075CNTL1 | ROHM Semiconductor | $1.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rd3t075cntl1-datasheets-4113.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 52W Tc | 7.5A | 30A | 0.325Ohm | 4.13 mJ | N-Channel | 755pF @ 25V | 325m Ω @ 3.75A, 10V | 5.25V @ 1mA | 7.5A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SI7810DN-T1-GE3 | Vishay Siliconix | $1.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7810dnt1e3-datasheets-3656.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 8 | 1 | Single | 1.5W | 1 | FET General Purpose Powers | S-PDSO-C5 | 10 ns | 15ns | 15 ns | 20 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 20A | 0.062Ohm | 100V | N-Channel | 62m Ω @ 5.4A, 10V | 4.5V @ 250μA | 3.4A Ta | 17nC @ 10V | 6V 10V | ±20V |
