Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Max Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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NTD4302T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntd4302t4g-datasheets-3714.pdf | 30V | 68A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 2 Weeks | No SVHC | 7.8MOhm | 4 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | YES | GULL WING | 260 | 4 | Single | 40 | 75W | 1 | FET General Purpose Power | R-PSSO-G2 | 15ns | 40 ns | 18.5A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 1.04W Ta 75W Tc | 28A | 722 mJ | 30V | N-Channel | 2400pF @ 24V | 1.9 V | 10m Ω @ 20A, 10V | 3V @ 250μA | 8.4A Ta 68A Tc | 80nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
FDB3502 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fdb3502-datasheets-3758.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 8 Weeks | 1.31247g | 47MOhm | ACTIVE (Last Updated: 19 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 3ns | 3 ns | 13 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 41W Tc | 6A | 40A | 54 mJ | 75V | N-Channel | 815pF @ 40V | 47m Ω @ 6A, 10V | 4.5V @ 250μA | 6A Ta 14A Tc | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
RD3P050SNFRATL | ROHM Semiconductor | $2.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rd3p050snfratl-datasheets-3788.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 15W Tc | 5A | 20A | 0.205Ohm | N-Channel | 530pF @ 25V | 190m Ω @ 5A, 10V | 2.5V @ 1mA | 5A Ta | 14nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
SIR460DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir460dpt1ge3-datasheets-3486.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 25 ns | 16ns | 12 ns | 28 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 1V | 5W Ta 48W Tc | 24.3A | 70A | 0.0047Ohm | 45 mJ | 30V | N-Channel | 2071pF @ 15V | 1 V | 4.7m Ω @ 15A, 10V | 2.4V @ 250μA | 40A Tc | 54nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
IRFU13N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfr13n20dtrpbf-datasheets-7573.pdf | 200V | 13A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 2.39mm | 2.3876mm | Lead Free | 3 | 14 Weeks | No SVHC | 235MOhm | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | Not Qualified | 11 ns | 27ns | 10 ns | 17 ns | 13A | 30V | 200V | SILICON | DRAIN | SWITCHING | 110W Tc | 52A | 200V | N-Channel | 830pF @ 25V | 5.5 V | 235m Ω @ 8A, 10V | 5.5V @ 250μA | 13A Tc | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
BUK6211-75C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | /files/nexperiausainc-buk621175c118-datasheets-3832.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 3 | Tin | No | 3 | Single | 158W | 1 | 18 ns | 40ns | 80 ns | 165 ns | 74A | 16V | 75V | 158W Tc | 75V | N-Channel | 5251pF @ 25V | 11m Ω @ 25A, 10V | 2.8V @ 1mA | 74A Tc | 81nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS8690 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds8690-datasheets-3840.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 8 ns | 1.8ns | 19 ns | 26 ns | 14A | 20V | SILICON | SWITCHING | 2.5W Ta | 0.0076Ohm | 30V | N-Channel | 1680pF @ 15V | 1.6 V | 7.6m Ω @ 14A, 10V | 3V @ 250μA | 14A Ta | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
DMTH6010SK3Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmth6010sk3q13-datasheets-3507.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 2 | 23 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3.1W Ta | 16.3A | 80A | 0.008Ohm | 27.7 mJ | N-Channel | 2841pF @ 30V | 8m Ω @ 20A, 10V | 4V @ 250μA | 16.3A Ta 70A Tc | 38.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
SQJA62EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqja62ept1ge3-datasheets-3663.pdf | PowerPAK® SO-8 | 1.267mm | 14 Weeks | 1 | 68W | 175°C | PowerPAK® SO-8 | 17 ns | 32 ns | 75A | 20V | 60V | 68W Tc | 3.7mOhm | 60V | N-Channel | 5100pF @ 25V | 4.5mOhm @ 10A, 10V | 2.5V @ 250μA | 60A Tc | 85nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTD23N03RT4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd23n03rt4g-datasheets-3546.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 1.14W Ta 22.3W Tc | 3.8A | 40A | 0.06Ohm | N-Channel | 225pF @ 20V | 45m Ω @ 6A, 10V | 2V @ 250μA | 3.8A Ta 17.1A Tc | 3.76nC @ 4.5V | 4V 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
SI7317DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7317dnt1ge3-datasheets-3381.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 1.2Ohm | EAR99 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | S-PDSO-C5 | 7 ns | 11ns | 10 ns | 11 ns | 2.8A | 30V | SILICON | DRAIN | SWITCHING | 150V | 3.2W Ta 19.8W Tc | 2A | 0.8 mJ | P-Channel | 365pF @ 75V | 1.2 Ω @ 500mA, 10V | 4.5V @ 250μA | 2.8A Tc | 9.8nC @ 10V | 6V 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
SI4459BDY-T1-GE3 | Vishay Siliconix | $0.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4459bdyt1ge3-datasheets-3519.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 30V | 3.1W Ta 5.6W Tc | P-Channel | 3490pF @ 15V | 4.9mOhm @ 15A, 10V | 2.2V @ 250μA | 20.5A Ta 27.8A Tc | 84nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQJA76EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqja76ept1ge3-datasheets-3560.pdf | 8-PowerTDFN | 14 Weeks | PowerPAK® SO-8 | 40V | 68W Tc | N-Channel | 5250pF @ 25V | 2.4mOhm @ 10A, 10V | 3.5V @ 250μA | 75A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTMFS4845NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntmfs4845nt1g-datasheets-3562.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 16 Weeks | 30V | 5 | ACTIVE (Last Updated: 21 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | Single | 5.95W | 1 | FET General Purpose Power | 115A | 20.5 ns | 48.5ns | 12.2 ns | 28.9 ns | 115A | 16V | SILICON | DRAIN | SWITCHING | 890mW Ta 62.5W Tc | 0.0044Ohm | 30V | N-Channel | 3720pF @ 12V | 2.9m Ω @ 30A, 10V | 2.5V @ 250μA | 13.7A Ta 115A Tc | 62nC @ 11.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
FQD8P10TM-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqd8p10tmf085-datasheets-3576.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 Weeks | 260.37mg | 530MOhm | 3 | yes | No | e3 | Tin (Sn) | GULL WING | Single | 2.5W | 1 | Other Transistors | R-PSSO-G2 | 11 ns | 110ns | 35 ns | 20 ns | 6.6A | 30V | SILICON | DRAIN | SWITCHING | 100V | 2.5W Ta 44W Tc | 26.4A | -100V | P-Channel | 470pF @ 25V | 530m Ω @ 3.3A, 10V | 4V @ 250μA | 6.6A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
FDMC7664 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc7664-datasheets-3585.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | 5 | 23 Weeks | 165.33333mg | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | Single | 2.3W | 1 | FET General Purpose Power | S-PDSO-N5 | 15 ns | 7ns | 6 ns | 37 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 2.3W Ta 45W Tc | 60A | 0.0042Ohm | 30V | N-Channel | 4865pF @ 15V | 1.9 V | 4.2m Ω @ 18.8A, 10V | 3V @ 250μA | 18.8A Ta 24A Tc | 76nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
AONR66922 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerWDFN | 18 Weeks | 100V | 4.1W Ta 52W Tc | N-Channel | 2180pF @ 50V | 9m Ω @ 15A, 10V | 2.5V @ 250μA | 15A Ta 50A Tc | 46nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTD4805NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-ntd4805nt4g-datasheets-3598.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 9 Weeks | 5MOhm | 4 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 2.24W | 1 | FET General Purpose Power | R-PSSO-G2 | 17.2 ns | 20.3ns | 8 ns | 20.8 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 1.41W Ta 79W Tc | 95A | 288 mJ | 30V | N-Channel | 2865pF @ 12V | 5m Ω @ 30A, 10V | 2.5V @ 250μA | 12.7A Ta 95A Tc | 48nC @ 11.5V | 4.5V 11.5V | ±20V | ||||||||||||||||||||||||||||||||||||
FDD6N50FTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdd6n50ftm-datasheets-3608.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 4 Weeks | 260.37mg | 1.15Ohm | 3 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | FDD6N50 | Single | 89W | 1 | R-PSSO-G2 | 17 ns | 28.3ns | 20.5 ns | 33.4 ns | 5.5A | 30V | SILICON | DRAIN | SWITCHING | 89W Tc | TO-252AA | 22A | 9.5 pF | 270 mJ | 500V | N-Channel | 960pF @ 25V | 1.15 Ω @ 2.75A, 10V | 5V @ 250μA | 5.5A Tc | 19.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
SQD50N04-5M6L_GE3 | Vishay Siliconix | $6.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n045m6lge3-datasheets-3616.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 71W Tc | N-Channel | 4000pF @ 25V | 5.6mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 75nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDWS9510L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | /files/onsemiconductor-fdws9510lf085-datasheets-3503.pdf | 8-PowerTDFN | 38 Weeks | yes | not_compliant | e3 | Tin (Sn) | 40V | 75W Tj | P-Channel | 2320pF @ 20V | 13.5m Ω @ 50A, 10V | 3V @ 250μA | 50A Tc | 37nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQJ411EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj411ept1ge3-datasheets-3629.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | 1 | 68W | 1 | 175°C | R-PSSO-G4 | 32 ns | 198 ns | -60A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 12V | 68W Tc | 52A | 0.0058Ohm | 45 mJ | -12V | P-Channel | 9100pF @ 6V | 5.8m Ω @ 15A, 4.5V | 1.5V @ 250μA | 60A Tc | 150nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
SQJA02EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqja02ept1ge3-datasheets-3627.pdf | PowerPAK® SO-8 | 1.267mm | 14 Weeks | 1 | 68W | 175°C | PowerPAK® SO-8 | 19 ns | 30 ns | 75A | 20V | 60V | 68W Tc | 4mOhm | 60V | N-Channel | 4700pF @ 25V | 4.8mOhm @ 10A, 10V | 3.5V @ 250μA | 60A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4168DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4168dyt1ge3-datasheets-3515.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 40 | 2.5W | 1 | 25 ns | 14ns | 15 ns | 30 ns | 24mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta 5.7W Tc | 24A | 0.0057Ohm | 30V | N-Channel | 1720pF @ 15V | 5.7m Ω @ 20A, 10V | 3V @ 250μA | 24A Tc | 44nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
FQB1P50TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fqb1p50tm-datasheets-3530.pdf | -500V | -1.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.65mm | 4.83mm | 10.67mm | Lead Free | 2 | 4 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 17 hours ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 3.13W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 9 ns | 25ns | 30 ns | 27 ns | 1.5A | 30V | SILICON | DRAIN | SWITCHING | 500V | 3.13W Ta 63W Tc | 6A | -500V | P-Channel | 350pF @ 25V | 10.5 Ω @ 750mA, 10V | 5V @ 250μA | 1.5A Tc | 14nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
RCD100N19TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 10 Weeks | EAR99 | not_compliant | e2 | Tin/Copper (Sn98Cu2) | SINGLE | GULL WING | 260 | 10 | 1 | R-PSSO-G2 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 190V | 190V | 850mW Ta 20W Tc | 0.19Ohm | N-Channel | 2000pF @ 25V | 182m Ω @ 5A, 10V | 2.5V @ 1mA | 10A Tc | 52nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
STL58N3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ H5 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl58n3llh5-datasheets-3294.pdf | 8-PowerVDFN | 5 | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | DUAL | FLAT | NOT SPECIFIED | STL58 | NOT SPECIFIED | 1 | R-PDSO-F5 | 64A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 4.8W Ta 62.5W Tc | 224A | 0.0112Ohm | 150 mJ | N-Channel | 950pF @ 25V | 9m Ω @ 7.5A, 10V | 2.5V @ 250μA | 64A Tc | 10nC @ 4.5V | 4.5V 10V | +22V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||||
FCD900N60Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcd900n60z-datasheets-3241.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 6.22mm | 2.39mm | 2 | 12 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | FCD900N60 | Single | NOT SPECIFIED | 2W | 1 | FET General Purpose Power | R-PSSO-G2 | 10.9 ns | 5.2ns | 11.9 ns | 33.6 ns | 4.5A | 20V | SILICON | DRAIN | SWITCHING | 600V | 52W Tc | TO-252AA | 0.9Ohm | 47.5 mJ | 650V | N-Channel | 720pF @ 25V | 900m Ω @ 2.3A, 10V | 3.5V @ 250μA | 4.5A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
NTK3142PT1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntk3142pt5g-datasheets-1943.pdf | SOT-723 | 3 | yes | unknown | e3 | MATTE TIN | YES | DUAL | FLAT | 260 | 3 | 40 | 1 | COMMERCIAL | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | 280mW Ta | 0.215A | 4Ohm | P-Channel | 15.3pF @ 10V | 4 Ω @ 260mA, 4.5V | 1.3V @ 250μA | 215mA Ta | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
NVTFS010N10MCLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvtfs010n10mcltag-datasheets-3366.pdf | 8-PowerWDFN | 18 Weeks | yes | NOT SPECIFIED | NOT SPECIFIED | 100V | 3.2W Ta 77.8W Tc | N-Channel | 2150pF @ 50V | 10.6m Ω @ 15A, 10V | 3V @ 85μA | 11.7A Ta 57.8 Tc | 30nC @ 10V | 4.5V 10V | ±20V |
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