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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SQD100N03-3M4_GE3 | Vishay Siliconix | $1.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd100n033m4ge3-datasheets-8948.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 136W Tc | TO-252AA | 100A | 160A | 0.0034Ohm | 168 mJ | N-Channel | 7349pF @ 15V | 3.4m Ω @ 20A, 10V | 3.5V @ 250μA | 100A Tc | 124nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMS4937NR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ntms4937nr2g-datasheets-8876.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 2 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.36W | 1 | FET General Purpose Power | 12.3 ns | 3.6ns | 38.9 ns | 33.8 ns | 8.6A | 20V | SILICON | SWITCHING | 810mW Ta | 11.2A | 0.0065Ohm | 30V | N-Channel | 2563pF @ 25V | 6.5m Ω @ 7.5A, 10V | 2.5V @ 250μA | 8.6A Ta | 38.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI4838BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4838bdyt1ge3-datasheets-8794.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 2.7mOhm | 8 | EAR99 | No | DUAL | GULL WING | 8 | 1 | Single | 2.5W | 1 | 150°C | 12 ns | 92ns | 19 ns | 56 ns | 22.5A | 8V | SILICON | SWITCHING | 400mV | 2.5W Ta 5.7W Tc | 12V | N-Channel | 5760pF @ 6V | 400 mV | 2.7m Ω @ 15A, 4.5V | 1V @ 250μA | 34A Tc | 84nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| RD3P130SPTL1 | ROHM Semiconductor | $0.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 20W Tc | 13A | 52A | 0.23Ohm | P-Channel | 2400pF @ 25V | 200m Ω @ 6.5A, 10V | 2.5V @ 1mA | 13A Ta | 40nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD5C434NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvd5c434nt4g-datasheets-8912.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 7 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 117W Tc | N-Channel | 5400pF @ 25V | 2.1m Ω @ 50A, 10V | 4V @ 250μA | 163A Tc | 80.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7655DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7655dnt1ge3-datasheets-8919.pdf | PowerPAK® 1212-8S | 3.3mm | 780μm | 3.3mm | 5 | 14 Weeks | No SVHC | 8 | EAR99 | Tin | No | e3 | C BEND | 2 | Dual | 4.8W | 1 | S-PDSO-C5 | 45 ns | 110 ns | -40A | 12V | SILICON | DRAIN | SWITCHING | 20V | -500mV | 4.8W Ta 57W Tc | 0.0036Ohm | -20V | P-Channel | 6600pF @ 10V | 3.6m Ω @ 20A, 10V | 1.1V @ 250μA | 40A Tc | 225nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| SIJ478DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sij478dpt1ge3-datasheets-8959.pdf | PowerPAK® SO-8 | 4 | 14 Weeks | 8 | EAR99 | No | GULL WING | 1 | Single | 1 | R-PSSO-G4 | 12 ns | 8ns | 7 ns | 32 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 5W Ta 62.5W Tc | 45 mJ | 80V | N-Channel | 1855pF @ 40V | 8m Ω @ 20A, 10V | 2.6V @ 250μA | 60A Tc | 54nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIR873DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sir873dpt1ge3-datasheets-8924.pdf | PowerPAK® SO-8 | 1.12mm | 5 | 14 Weeks | EAR99 | S17-0173_SINGLE | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 6.25W | 1 | 150°C | R-PDSO-F5 | 15 ns | 28 ns | -9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 104W Tc | 37A | 50A | 0.0475Ohm | 80 mJ | -150V | P-Channel | 1805pF @ 75V | 47.5m Ω @ 10A, 10V | 4V @ 250μA | 37A Tc | 48nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FQB19N20LTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqb19n20ltm-datasheets-8595.pdf&product=onsemiconductor-fqb19n20ltm-6837642 | 200V | 21A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 7 Weeks | No SVHC | 140MOhm | 3 | ACTIVE (Last Updated: 16 hours ago) | yes | EAR99 | Tin | No | 17A | e3 | 200V | GULL WING | Single | 3.13W | 1 | FET General Purpose Power | R-PSSO-G2 | 35 ns | 300ns | 180 ns | 130 ns | 21mA | 20V | SILICON | DRAIN | SWITCHING | 2V | 3.13W Ta 140W Tc | 250 mJ | 200V | N-Channel | 2200pF @ 25V | 2 V | 140m Ω @ 10.5A, 10V | 2V @ 250μA | 21A Tc | 35nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SIR812DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir812dpt1ge3-datasheets-8805.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | 6.25W | 1 | R-PDSO-C5 | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1V | 6.25W Ta 104W Tc | N-Channel | 10240pF @ 15V | 1.45m Ω @ 20A, 10V | 2.3V @ 250μA | 60A Tc | 335nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SQD45P03-12_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sqd45p0312ge3-datasheets-8650.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 71W | 1 | TO-252, (D-Pak) | 3.495nF | 11 ns | 11ns | 19 ns | 29 ns | 50A | 20V | 30V | -1.5V | 71W Tc | 12mOhm | -30V | P-Channel | 3495pF @ 15V | 10mOhm @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 83nC @ 10V | 10 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y4R8-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y4r860ex-datasheets-7326.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | AVALANCHE RATED | YES | SINGLE | GULL WING | 4 | 1 | 238W | 1 | 15 ns | 27ns | 31 ns | 57 ns | 100A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 238W Tc | MO-235 | 595A | 60V | N-Channel | 5520pF @ 25V | 4.8m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 73.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| RSD130P10TL | ROHM Semiconductor | $0.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rsd130p10tl-datasheets-8768.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 20 Weeks | 3 | No | 13A | 20V | 100V | 20W Ta | -100V | P-Channel | 13A Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH10H010SPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth10h010spsq13-datasheets-8783.pdf | 8-PowerTDFN | 19 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100V | 1.5W Ta 166W Tc | N-Channel | 4468pF @ 50V | 8.8m Ω @ 13A, 10V | 4V @ 250μA | 11.8A Ta 100A Tc | 56.4nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76429D3ST-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-hufa76429d3-datasheets-2646.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 29 Weeks | 260.37mg | 27mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | GULL WING | Single | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.7 ns | 36ns | 56 ns | 60 ns | 20A | 16V | SILICON | DRAIN | 110W Tc | TO-252AA | 60V | N-Channel | 1480pF @ 25V | 23m Ω @ 20A, 10V | 3V @ 250μA | 20A Tc | 46nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| STD12N50DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std12n50dm2-datasheets-8856.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STD12 | NOT SPECIFIED | 11A | 500V | 110W Tc | N-Channel | 628pF @ 100V | 350m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 16nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK7P60W5,RVQ | Toshiba Semiconductor and Storage | $0.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3.949996g | 1 | Single | 60 ns | 40ns | 5 ns | 70 ns | 7A | 30V | 60W Tc | 600V | N-Channel | 490pF @ 300V | 670m Ω @ 3.5A, 10V | 4.5V @ 350μA | 7A Ta | 16nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7656AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7656as-datasheets-8728.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 18 Weeks | 68.1mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 96W | 1 | FET General Purpose Power | R-PDSO-F5 | 22 ns | 12ns | 7 ns | 50 ns | 31A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 96W Tc | MO-240AA | 242 mJ | 30V | N-Channel | 8705pF @ 15V | 1.6 V | 1.8m Ω @ 30A, 10V | 3V @ 1mA | 31A Ta 49A Tc | 133nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPS80R600P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips80r600p7akma1-datasheets-8734.pdf | TO-251-3 Stub Leads, IPak | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 60W Tc | 22A | 0.6Ohm | 20 mJ | N-Channel | 570pF @ 500V | 600m Ω @ 3.4A, 10V | 3.5V @ 170μA | 8A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR492DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-sir492dpt1ge3-datasheets-8736.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | Unknown | 4.7MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 4.2W | 1 | FET General Purpose Powers | R-XDSO-C5 | 27 ns | 125ns | 12 ns | 53 ns | 40A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 1V | 4.2W Ta 36W Tc | 27A | 60A | N-Channel | 3720pF @ 6V | 3.8m Ω @ 15A, 4.5V | 1V @ 250μA | 40A Tc | 110nC @ 8V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| STB76NF75 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb76nf75-datasheets-8641.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 245 | STB76N | 4 | Single | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 100ns | 30 ns | 66 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.011Ohm | 700 mJ | 75V | N-Channel | 3700pF @ 25V | 11m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| RD3G600GNTL | ROHM Semiconductor | $2.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rd3g600gntl-datasheets-8655.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 40W Ta | 60A | 120A | 0.0043Ohm | 13 mJ | N-Channel | 3400pF @ 20V | 3.6m Ω @ 60A, 10V | 2.5V @ 1mA | 60A Ta | 46.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4834NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ntmfs4834nt1g-datasheets-8785.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 6 | 16 Weeks | No SVHC | 5 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 260 | 5 | Single | 40 | 2.31W | 1 | FET General Purpose Power | R-PDSO-F6 | 34ns | 23 ns | 22 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 900mW Ta 86.2W Tc | 260A | 0.003Ohm | 30V | N-Channel | 4500pF @ 12V | 1.5 V | 3m Ω @ 30A, 10V | 2.5V @ 250μA | 13A Ta 130A Tc | 48nC @ 4.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||
| R6003KND3TL1 | ROHM Semiconductor | $1.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6003knd3tl1-datasheets-8791.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 44W Tc | 3A | 9A | 13.4 mJ | N-Channel | 185pF @ 25V | 1.5 Ω @ 1A, 10V | 5.5V @ 1mA | 3A Tc | 8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7108DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7108dnt1ge3-datasheets-8585.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 60 ns | 22A | 16V | SILICON | DRAIN | SWITCHING | 2V | 1.5W Ta | 60A | 0.0049Ohm | 24 mJ | 20V | N-Channel | 4.9m Ω @ 22A, 10V | 2V @ 250μA | 14A Ta | 30nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||
| NTMFS6D1N08HT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | /files/onsemiconductor-ntmfs6d1n08ht1g-datasheets-8567.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.8W Ta 104W Tc | N-Channel | 2085pF @ 40V | 5.5m Ω @ 20A, 10V | 4V @ 120μA | 17A Ta 89A Tc | 32nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS892DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-sis892dnt1ge3-datasheets-8483.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | 150°C | S-XDSO-C5 | 10 ns | 17 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 3V | 3.7W Ta 52W Tc | 50A | 0.029Ohm | 5 mJ | 100V | N-Channel | 611pF @ 50V | 29m Ω @ 10A, 10V | 3V @ 250μA | 30A Tc | 21.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIRA50DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira50dpt1re3-datasheets-8578.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | S17-0173-Single | 1 | 6.25W | 150°C | PowerPAK® SO-8 | 19 ns | 53 ns | 62.5A | 40V | 6.25W Ta 100W Tc | 860μOhm | 40V | N-Channel | 8445pF @ 20V | 1mOhm @ 20A, 10V | 2.2V @ 250μA | 62.5A Ta 100A Tc | 194nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP2450N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/microchiptechnology-vp2450n8g-datasheets-8632.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | 3 | 6 Weeks | 52.786812mg | 4 | EAR99 | No | e3 | Matte Tin (Sn) | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | R-PSSO-F3 | 10 ns | 25ns | 25 ns | 45 ns | 160mA | 20V | SILICON | DRAIN | SWITCHING | 500V | 1.6W Ta | 0.8A | -500V | P-Channel | 190pF @ 25V | 30 Ω @ 100mA, 10V | 3.5V @ 1mA | 160mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| DMT12H007LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt12h007lps13-datasheets-8627.pdf | 8-PowerVDFN | 24 Weeks | 120V | 2.9W | N-Channel | 3224pF @ 60V | 7.8m Ω @ 30A, 10V | 2.5V @ 250μA | 90A Tc | 49nC @ 10V | 4.5V 10V | ±20V |
