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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDD86369 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | /files/onsemiconductor-fdd86369-datasheets-7420.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | 260.37mg | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 80V | 150W Tj | N-Channel | 2530pF @ 40V | 7.9m Ω @ 80A, 10V | 4V @ 250μA | 90A Tc | 54nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD30N05-20L_GE3 | Vishay Siliconix | $1.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd30n0520lge3-datasheets-7318.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | Unknown | 3 | No | 50W | 1 | TO-252AA | 1.175nF | 7 ns | 10ns | 5 ns | 18 ns | 30A | 20V | 55V | 2V | 50W Tc | 16mOhm | N-Channel | 1175pF @ 25V | 20mOhm @ 20A, 10V | 2.5V @ 250μA | 30A Tc | 18nC @ 5V | 20 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI7892BDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7892bdpt1ge3-datasheets-7461.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.8W | 1 | FET General Purpose Powers | Not Qualified | R-XDSO-C5 | 20 ns | 13ns | 13 ns | 62 ns | 25A | 20V | SILICON | DRAIN | 1.8W Ta | 60A | 0.0042Ohm | 30V | N-Channel | 3775pF @ 15V | 4.2m Ω @ 25A, 10V | 3V @ 250μA | 15A Ta | 40nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIR878BDP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sir878bdpt1re3-datasheets-7493.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 5W Ta 62.5W Tc | 12mOhm | N-Channel | 1850pF @ 50V | 14.4mOhm @ 15A, 10V | 3.4V @ 250μA | 12A Ta 42.5A Tc | 38nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD16322Q5C | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd16322q5c-datasheets-7450.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | No SVHC | 8 | NRND (Last Updated: 4 weeks ago) | 1mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD16322 | 8 | Single | NOT SPECIFIED | 3.1W | 1 | FET General Purpose Power | Not Qualified | 6.1 ns | 10.7ns | 3.7 ns | 12.3 ns | 97A | 10V | SILICON | DRAIN | SWITCHING | 25V | 25V | 1.1V | 3.1W Ta | 0.007Ohm | N-Channel | 1365pF @ 12.5V | 1.1 V | 5m Ω @ 20A, 8V | 1.4V @ 250μA | 21A Ta 97A Tc | 9.7nC @ 4.5V | 3V 8V | +10V, -8V | |||||||||||||||||||||||||||||||
| FDD6030L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd6030l-datasheets-7472.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 10 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | GULL WING | Single | 3.2W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 7ns | 12 ns | 29 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 3.2W Ta 56W Tc | 30V | N-Channel | 1230pF @ 15V | 14.5m Ω @ 12A, 10V | 3V @ 250μA | 12A Ta 50A Tc | 28nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7580 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7580-datasheets-7465.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 5 | 18 Weeks | 68.1mg | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 59W | 1 | FET General Purpose Power | R-PDSO-F5 | 7.3 ns | 6.8ns | 4.5 ns | 17 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 1.6V | 2.5W Ta 27W Tc | 49A | 60A | 0.0075Ohm | 32 mJ | 25V | N-Channel | 1190pF @ 13V | 1.6 V | 7.5m Ω @ 15A, 10V | 3V @ 250μA | 15A Ta 29A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFU2405PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfu2405pbf-datasheets-7533.pdf | 55V | 56A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | 12 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | 15 ns | 130ns | 78 ns | 55 ns | 56A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | 220A | 0.016Ohm | 55V | N-Channel | 2430pF @ 25V | 16m Ω @ 34A, 10V | 4V @ 250μA | 56A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STS4DNFS30 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sts4dnfs30-datasheets-7357.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | e4 | NICKEL PALLADIUM GOLD | DUAL | GULL WING | 260 | STS4D | 8 | 30 | 2W | 1 | FET General Purpose Power | Not Qualified | 17ns | 6 ns | 15 ns | 4.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2W Tc | 13A | 30V | N-Channel | 330pF @ 25V | 55m Ω @ 2A, 10V | 1V @ 250μA | 4.5A Tc | 4.7nC @ 5V | Schottky Diode (Isolated) | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BUK9E08-55B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk9e0855b127-datasheets-7371.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 12 Weeks | 3 | Tin | not_compliant | 3 | Single | 203W | 1 | 29 ns | 123ns | 86 ns | 131 ns | 110A | 15V | 55V | 203W Tc | 55V | N-Channel | 5280pF @ 25V | 7m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 45nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4470EY-T1_GE3 | Vishay Siliconix | $6.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq4470eyt1ge3-datasheets-7011.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 506.605978mg | Unknown | 8 | No | 1 | Single | 1 | 8-SO | 3.165nF | 13 ns | 12ns | 9 ns | 25 ns | 16A | 20V | 60V | 3V | 7.1W Tc | 12mOhm | 60V | N-Channel | 3165pF @ 25V | 3 V | 12mOhm @ 6A, 10V | 3.5V @ 250μA | 16A Tc | 68nC @ 10V | 12 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| RD3H160SPTL1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 45V | 45V | 20W Tc | 16A | 32A | 0.05Ohm | P-Channel | 2000pF @ 10V | 50m Ω @ 16A, 10V | 3V @ 1mA | 16A Ta | 16nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RD3P175SNTL1 | ROHM Semiconductor | $1.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 20W Tc | 17.5A | 35A | 0.119Ohm | N-Channel | 950pF @ 25V | 105m Ω @ 8.8A, 10V | 2.5V @ 1mA | 17.5A Ta | 24nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RS1E350BNTB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/rohm-rs1e350bntb-datasheets-4679.pdf | 8-PowerTDFN | 5 | 10 Weeks | 8 | EAR99 | not_compliant | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 35A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 35W Tc | 140A | 0.0025Ohm | N-Channel | 7900pF @ 15V | 1.7m Ω @ 35A, 10V | 2.5V @ 1mA | 35A Ta | 185nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA60DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sira60dpt1ge3-datasheets-7211.pdf | PowerPAK® SO-8 | 14 Weeks | No SVHC | 8 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 100A | 30V | 2.2V | 57W Tc | N-Channel | 7650pF @ 15V | 0.94m Ω @ 20A, 10V | 2.2V @ 250μA | 100A Tc | 60nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4463BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4463bdyt1e3-datasheets-7759.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 14 Weeks | 186.993455mg | Unknown | 8 | No | 1 | Single | 1.5W | 1 | 8-SO | 35 ns | 60ns | 75 ns | 115 ns | 13.7A | 12V | 20V | -1.4V | 1.5W Ta | 11mOhm | -20V | P-Channel | 11mOhm @ 13.7A, 10V | 1.4V @ 250μA | 9.8A Ta | 56nC @ 4.5V | 11 mΩ | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| TSM60N06CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60n06cprog-datasheets-7221.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252, (D-Pak) | 60V | 44.6W Tc | N-Channel | 4382pF @ 30V | 7.3mOhm @ 30A, 10V | 4V @ 250μA | 66A Tc | 81nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPB100N03S203T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | /files/infineontechnologies-spb100n03s203t-datasheets-7263.pdf | 30V | 100A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | PG-TO263-3-2 | 7.02nF | 40ns | 100A | 30V | 300W Tc | N-Channel | 7020pF @ 25V | 3mOhm @ 80A, 10V | 4V @ 250μA | 100A Tc | 150nC @ 10V | 3 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK15S04N1L,LQ | Toshiba Semiconductor and Storage | $5.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3.949996g | yes | unknown | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 14 ns | 6ns | 6 ns | 28 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 46W Tc | 30A | 0.037Ohm | 23 mJ | 40V | N-Channel | 610pF @ 10V | 17.8m Ω @ 7.5A, 10V | 2.5V @ 100μA | 15A Ta | 10nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIJ462DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sij462dpt1ge3-datasheets-7300.pdf | PowerPAK® SO-8 | 4 | 14 Weeks | Unknown | 8 | EAR99 | No | 31.2W | GULL WING | 1 | Single | 1 | R-PSSO-G4 | 10 ns | 10ns | 8 ns | 24 ns | 46.5A | 20V | DRAIN | SWITCHING | 20 mJ | 60V | N-Channel | 1400pF @ 30V | 8m Ω @ 20A, 10V | 2.5V @ 250μA | 46.5A Tc | 32nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQD19P06-60L_T4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd19p0660lge3-datasheets-7043.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 12 Weeks | 1 | 46W | 175°C | TO-252AA | 7 ns | 25 ns | -20A | 20V | 60V | 46W Tc | 46mOhm | -60V | P-Channel | 1490pF @ 25V | 55mOhm @ 19A, 10V | 2.5V @ 250μA | 20A Tc | 41nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS606BDN-T1-GE3 | Vishay Siliconix | $5.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis606bdnt1ge3-datasheets-7292.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 100V | 3.7W Ta 52W Tc | 14.5mOhm | N-Channel | 1470pF @ 50V | 17.4mOhm @ 10A, 10V | 4V @ 250μA | 9.4A Ta 35.3A Tc | 30nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4182EY-T1_GE3 | Vishay Siliconix | $1.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq4182eyt1ge3-datasheets-7316.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | yes | EAR99 | No | 16 ns | 10ns | 8 ns | 57 ns | 32A | 20V | 30V | 7.1W Tc | N-Channel | 5400pF @ 15V | 3.8m Ω @ 14A, 10V | 2.5V @ 250μA | 32A Tc | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK302500L | Panasonic Electronic Components | $1.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk302500l-datasheets-7322.pdf | 60V | 30A | TO-252-4, DPak (3 Leads + Tab) | Lead Free | U-DL | 1.2nF | 30A | 60V | 1W Ta 25W Tc | N-Channel | 1200pF @ 10V | 40mOhm @ 15A, 10V | 2.5V @ 1mA | 30A Tc | 40 mΩ | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTFS5116PLWFTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/onsemiconductor-nvtfs5116pltwg-datasheets-7955.pdf | 8-PowerWDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 8 | 1 | Single | Other Transistors | 14 ns | 68ns | 36 ns | 24 ns | 6A | 20V | 60V | 3.2W Ta 21W Tc | P-Channel | 1258pF @ 25V | 52m Ω @ 7A, 10V | 3V @ 250μA | 6A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STD130N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std130n6f7-datasheets-7170.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | ACTIVE (Last Updated: 7 months ago) | STD13 | 60V | 134W Tc | N-Channel | 2600pF @ 30V | 5m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL8N10LF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl8n10lf3-datasheets-7184.pdf | 8-PowerVDFN | 1mm | 5 | 12 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | DUAL | FLAT | STL8 | 1 | Single | 70W | 1 | FET General Purpose Powers | 175°C | R-PDSO-F5 | 8.7 ns | 9.6ns | 5.2 ns | 50.6 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 4.3W Ta 70W Tc | 0.05Ohm | 100V | N-Channel | 970pF @ 25V | 35m Ω @ 4A, 10V | 3V @ 250μA | 20A Tc | 20.5nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDD13AN06A0-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd13an06a0f085-datasheets-7143.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | FDD13AN06 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 115W Tc | TO-252AA | 9.9A | 0.0135Ohm | 56 mJ | N-Channel | 1350pF @ 25V | 13.5m Ω @ 50A, 10V | 4V @ 250μA | 9.9A Ta 50A Tc | 29nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4985NFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntmfs4985nft1g-datasheets-7131.pdf | 8-PowerTDFN | Lead Free | 5 | 2 Weeks | 5 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | 1 | FET General Purpose Power | 11 ns | 32ns | 6 ns | 21 ns | 65A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.63W Ta 22.73W Tc | N-Channel | 2100pF @ 15V | 3.4m Ω @ 30A, 10V | 2.3V @ 1mA | 17.5A Ta 65A Tc | 30.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STL62P3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ H6 | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl62p3llh6-datasheets-6982.pdf | 8-PowerVDFN | 20 Weeks | EAR99 | NOT SPECIFIED | STL62 | NOT SPECIFIED | Other Transistors | 62A | Single | 30V | 100W Tc | P-Channel | 3350pF @ 25V | 10.5m Ω @ 7A, 10V | 1V @ 250μA (Min) | 62A Tc | 33nC @ 4.5V | 4.5V 10V | ±20V |
