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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STL50NH3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl50nh3ll-datasheets-7541.pdf | 30V | 27A | 8-PowerVDFN | Lead Free | 5 | 13mOhm | 8 | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) - annealed | DUAL | NO LEAD | 260 | STL50 | 8 | 30 | 60W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-N5 | 32ns | 8.5 ns | 18 ns | 27A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60W Tc | 13A | 150 mJ | 30V | N-Channel | 965pF @ 25V | 13m Ω @ 6.5A, 10V | 1V @ 250μA | 27A Tc | 12nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| SI7686DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7686dpt1e3-datasheets-7859.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 13 ns | 16ns | 8 ns | 23 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 3V | 5W Ta 37.9W Tc | 50A | 0.0095Ohm | 5 mJ | 30V | N-Channel | 1220pF @ 15V | 9.5m Ω @ 13.8A, 10V | 3V @ 250μA | 35A Tc | 26nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| STD10N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std10n60dm2-datasheets-7332.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STD10 | 650V | 109W Tc | N-Channel | 529pF @ 100V | 530m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 15nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ848EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sqj848ept1ge3-datasheets-7427.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | 8 | yes | EAR99 | No | GULL WING | 260 | 8 | Single | 40 | 68W | 1 | FET General Purpose Power | R-PSSO-G4 | 18 ns | 10ns | 17 ns | 38 ns | 30A | 20V | SILICON | DRAIN | 68W Tc | 47A | 0.009Ohm | 40V | N-Channel | 2500pF @ 20V | 2 V | 7.5m Ω @ 10.3A, 10V | 2.5V @ 250μA | 47A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SQD40061EL_GE3 | Vishay Siliconix | $11.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40061elge3-datasheets-7324.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 107W Tc | P-Channel | 14500pF @ 25V | 5.1mOhm @ 30A, 10V | 2.5V @ 250μA | 100A Tc | 280nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86369 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | /files/onsemiconductor-fdd86369-datasheets-7420.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | 260.37mg | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 80V | 150W Tj | N-Channel | 2530pF @ 40V | 7.9m Ω @ 80A, 10V | 4V @ 250μA | 90A Tc | 54nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD30N05-20L_GE3 | Vishay Siliconix | $1.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd30n0520lge3-datasheets-7318.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | Unknown | 3 | No | 50W | 1 | TO-252AA | 1.175nF | 7 ns | 10ns | 5 ns | 18 ns | 30A | 20V | 55V | 2V | 50W Tc | 16mOhm | N-Channel | 1175pF @ 25V | 20mOhm @ 20A, 10V | 2.5V @ 250μA | 30A Tc | 18nC @ 5V | 20 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7892BDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7892bdpt1ge3-datasheets-7461.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.8W | 1 | FET General Purpose Powers | Not Qualified | R-XDSO-C5 | 20 ns | 13ns | 13 ns | 62 ns | 25A | 20V | SILICON | DRAIN | 1.8W Ta | 60A | 0.0042Ohm | 30V | N-Channel | 3775pF @ 15V | 4.2m Ω @ 25A, 10V | 3V @ 250μA | 15A Ta | 40nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SQD19P06-60L_T4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd19p0660lge3-datasheets-7043.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 12 Weeks | 1 | 46W | 175°C | TO-252AA | 7 ns | 25 ns | -20A | 20V | 60V | 46W Tc | 46mOhm | -60V | P-Channel | 1490pF @ 25V | 55mOhm @ 19A, 10V | 2.5V @ 250μA | 20A Tc | 41nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS606BDN-T1-GE3 | Vishay Siliconix | $5.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis606bdnt1ge3-datasheets-7292.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 100V | 3.7W Ta 52W Tc | 14.5mOhm | N-Channel | 1470pF @ 50V | 17.4mOhm @ 10A, 10V | 4V @ 250μA | 9.4A Ta 35.3A Tc | 30nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4182EY-T1_GE3 | Vishay Siliconix | $1.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq4182eyt1ge3-datasheets-7316.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | yes | EAR99 | No | 16 ns | 10ns | 8 ns | 57 ns | 32A | 20V | 30V | 7.1W Tc | N-Channel | 5400pF @ 15V | 3.8m Ω @ 14A, 10V | 2.5V @ 250μA | 32A Tc | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK302500L | Panasonic Electronic Components | $1.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk302500l-datasheets-7322.pdf | 60V | 30A | TO-252-4, DPak (3 Leads + Tab) | Lead Free | U-DL | 1.2nF | 30A | 60V | 1W Ta 25W Tc | N-Channel | 1200pF @ 10V | 40mOhm @ 15A, 10V | 2.5V @ 1mA | 30A Tc | 40 mΩ | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTFS5116PLWFTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/onsemiconductor-nvtfs5116pltwg-datasheets-7955.pdf | 8-PowerWDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 8 | 1 | Single | Other Transistors | 14 ns | 68ns | 36 ns | 24 ns | 6A | 20V | 60V | 3.2W Ta 21W Tc | P-Channel | 1258pF @ 25V | 52m Ω @ 7A, 10V | 3V @ 250μA | 6A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STS4DNFS30 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sts4dnfs30-datasheets-7357.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | e4 | NICKEL PALLADIUM GOLD | DUAL | GULL WING | 260 | STS4D | 8 | 30 | 2W | 1 | FET General Purpose Power | Not Qualified | 17ns | 6 ns | 15 ns | 4.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2W Tc | 13A | 30V | N-Channel | 330pF @ 25V | 55m Ω @ 2A, 10V | 1V @ 250μA | 4.5A Tc | 4.7nC @ 5V | Schottky Diode (Isolated) | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BUK9E08-55B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk9e0855b127-datasheets-7371.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 12 Weeks | 3 | Tin | not_compliant | 3 | Single | 203W | 1 | 29 ns | 123ns | 86 ns | 131 ns | 110A | 15V | 55V | 203W Tc | 55V | N-Channel | 5280pF @ 25V | 7m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 45nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4470EY-T1_GE3 | Vishay Siliconix | $6.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq4470eyt1ge3-datasheets-7011.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 506.605978mg | Unknown | 8 | No | 1 | Single | 1 | 8-SO | 3.165nF | 13 ns | 12ns | 9 ns | 25 ns | 16A | 20V | 60V | 3V | 7.1W Tc | 12mOhm | 60V | N-Channel | 3165pF @ 25V | 3 V | 12mOhm @ 6A, 10V | 3.5V @ 250μA | 16A Tc | 68nC @ 10V | 12 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RD3H160SPTL1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 45V | 45V | 20W Tc | 16A | 32A | 0.05Ohm | P-Channel | 2000pF @ 10V | 50m Ω @ 16A, 10V | 3V @ 1mA | 16A Ta | 16nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RD3P175SNTL1 | ROHM Semiconductor | $1.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 20W Tc | 17.5A | 35A | 0.119Ohm | N-Channel | 950pF @ 25V | 105m Ω @ 8.8A, 10V | 2.5V @ 1mA | 17.5A Ta | 24nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RS1E350BNTB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/rohm-rs1e350bntb-datasheets-4679.pdf | 8-PowerTDFN | 5 | 10 Weeks | 8 | EAR99 | not_compliant | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 35A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 35W Tc | 140A | 0.0025Ohm | N-Channel | 7900pF @ 15V | 1.7m Ω @ 35A, 10V | 2.5V @ 1mA | 35A Ta | 185nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA60DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sira60dpt1ge3-datasheets-7211.pdf | PowerPAK® SO-8 | 14 Weeks | No SVHC | 8 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 100A | 30V | 2.2V | 57W Tc | N-Channel | 7650pF @ 15V | 0.94m Ω @ 20A, 10V | 2.2V @ 250μA | 100A Tc | 60nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4463BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4463bdyt1e3-datasheets-7759.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 14 Weeks | 186.993455mg | Unknown | 8 | No | 1 | Single | 1.5W | 1 | 8-SO | 35 ns | 60ns | 75 ns | 115 ns | 13.7A | 12V | 20V | -1.4V | 1.5W Ta | 11mOhm | -20V | P-Channel | 11mOhm @ 13.7A, 10V | 1.4V @ 250μA | 9.8A Ta | 56nC @ 4.5V | 11 mΩ | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| TSM60N06CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60n06cprog-datasheets-7221.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252, (D-Pak) | 60V | 44.6W Tc | N-Channel | 4382pF @ 30V | 7.3mOhm @ 30A, 10V | 4V @ 250μA | 66A Tc | 81nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPB100N03S203T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | /files/infineontechnologies-spb100n03s203t-datasheets-7263.pdf | 30V | 100A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | PG-TO263-3-2 | 7.02nF | 40ns | 100A | 30V | 300W Tc | N-Channel | 7020pF @ 25V | 3mOhm @ 80A, 10V | 4V @ 250μA | 100A Tc | 150nC @ 10V | 3 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK15S04N1L,LQ | Toshiba Semiconductor and Storage | $5.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3.949996g | yes | unknown | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 14 ns | 6ns | 6 ns | 28 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 46W Tc | 30A | 0.037Ohm | 23 mJ | 40V | N-Channel | 610pF @ 10V | 17.8m Ω @ 7.5A, 10V | 2.5V @ 100μA | 15A Ta | 10nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIJ462DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sij462dpt1ge3-datasheets-7300.pdf | PowerPAK® SO-8 | 4 | 14 Weeks | Unknown | 8 | EAR99 | No | 31.2W | GULL WING | 1 | Single | 1 | R-PSSO-G4 | 10 ns | 10ns | 8 ns | 24 ns | 46.5A | 20V | DRAIN | SWITCHING | 20 mJ | 60V | N-Channel | 1400pF @ 30V | 8m Ω @ 20A, 10V | 2.5V @ 250μA | 46.5A Tc | 32nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB160N04S3H2ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipb160n04s3h2atma1-datasheets-7080.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 12 Weeks | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 214W | 1 | R-PSSO-G6 | 30 ns | 16ns | 17 ns | 46 ns | 160A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 214W Tc | 640A | 898 mJ | N-Channel | 9600pF @ 25V | 2.1m Ω @ 80A, 10V | 4V @ 150μA | 160A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S303ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipb100n04s303atma1-datasheets-7086.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | ULTRA LOW RESISTANCE | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 214W Tc | 100A | 400A | 0.0028Ohm | 898 mJ | N-Channel | 9600pF @ 25V | 2.5m Ω @ 80A, 10V | 4V @ 150μA | 100A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SISS66DN-T1-GE3 | Vishay Siliconix | $1.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss66dnt1ge3-datasheets-7135.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S | 30V | 5.1W Ta 65.8W Tc | N-Channel | 3327pF @ 15V | 1.38mOhm @ 20A, 10V | 2.5V @ 250μA | 49.1A Ta 178.3A Tc | 85.5nC @ 10V | Schottky Diode (Body) | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS86267P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds86267p-datasheets-7161.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 9 Weeks | 130mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | Single | NOT SPECIFIED | 1 | 2.2A | SILICON | SWITCHING | 150V | 150V | 1W Ta | MS-012AA | 0.255Ohm | 2.3 pF | P-Channel | 1130pF @ 75V | 255m Ω @ 2.2A, 10V | 4V @ 250μA | 2.2A Ta | 16nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOUS66616 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 3-PowerSMD, Flat Leads | 18 Weeks | 60V | 6.2W Ta 92.5W Tc | N-Channel | 2870pF @ 30V | 3.3m Ω @ 20A, 10V | 3.4V @ 250μA | 33A Ta 92A Tc | 60nC @ 10V | 6V 10V | ±20V |
