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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TSM150P04LCS RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm150p04lcsrlg-datasheets-9086.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | 40V | 12.5W Tc | P-Channel | 2783pF @ 20V | 15m Ω @ 9A, 10V | 2.5V @ 250μA | 22A Tc | 48nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDZ371PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdz371pz-datasheets-8925.pdf | 4-XFBGA, WLCSP | 1mm | 400μm | 1mm | 4 | 10 Weeks | 68.4mg | No SVHC | 4 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Copper, Silver, Tin | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | Single | 1.7W | 1 | Other Transistors | 5.9 ns | 9.1ns | 88 ns | 124 ns | -3.7A | 8V | SILICON | SWITCHING | 20V | -600mV | 1.7W Ta | 0.075Ohm | -20V | P-Channel | 1000pF @ 10V | 75m Ω @ 2A, 4.5V | 1V @ 250μA | 3.7A Ta | 17nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| NTLUS4C12NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntlus4c12ntag-datasheets-8851.pdf | 6-UDFN Exposed Pad | Lead Free | 6 Weeks | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | 6 | 6.8A | 30V | 630mW Ta | N-Channel | 1172pF @ 15V | 9m Ω @ 9A, 10V | 2.1V @ 250μA | 6.8A Ta | 18nC @ 10V | 3.3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4134DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-si4134dyt1ge3-datasheets-8902.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 14MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 5W | 1 | 15 ns | 12ns | 10 ns | 14 ns | 9.9A | 20V | SILICON | SWITCHING | 1.8V | 2.5W Ta 5W Tc | 30V | N-Channel | 846pF @ 15V | 14m Ω @ 10A, 10V | 2.5V @ 250μA | 14A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STL10N3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl10n3llh5-datasheets-8913.pdf | 8-PowerVDFN | Lead Free | 8 | 14 Weeks | No SVHC | 11.7Ohm | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW-ON RESISTANCE | No | DUAL | STL10 | 8 | Single | 50W | 1 | FET General Purpose Powers | 4 ns | 4.2ns | 3.5 ns | 21 ns | 9A | 22V | SILICON | SWITCHING | 1V | 2W Ta 50W Tc | 9A | 36A | 150 mJ | 30V | N-Channel | 900pF @ 25V | 1 V | 19m Ω @ 4.5A, 10V | 2.5V @ 250μA | 9A Tc | 6nC @ 4.5V | 4.5V 10V | ±22V | ||||||||||||||||||||||||||||||||||||||||||||
| FDME910PZT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdme910pzt-datasheets-9008.pdf | 6-PowerUFDFN | 1.6mm | 500μm | 1.6mm | Lead Free | 3 | 16 Weeks | 30mg | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 2.1W | 1 | Other Transistors | S-PDSO-N3 | 9 ns | 11ns | 46 ns | 87 ns | 8A | 8V | SILICON | DRAIN | SWITCHING | 20V | 2.1W Ta | 8A | 0.024Ohm | 330 pF | -20V | P-Channel | 2110pF @ 10V | 24m Ω @ 8A, 4.5V | 1.5V @ 250μA | 8A Ta | 21nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| SI4143DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4143dyt1ge3-datasheets-9036.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 6.2mOhm | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 6W Tc | P-Channel | 6630pF @ 15V | 6.2m Ω @ 12A, 10V | 2.5V @ 250μA | 25.3A Tc | 167nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM4NB65CP ROG | Taiwan Semiconductor Corporation | $2.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm4nb65chc5g-datasheets-6986.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20 Weeks | TO-252, (D-Pak) | 650V | 70W Tc | N-Channel | 549pF @ 25V | 3.37Ohm @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 13.46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD17P06TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fqu17p06tu-datasheets-9459.pdf | -60V | -12A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 4 Weeks | 260.37mg | No SVHC | 135mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 2.5W | 1 | Other Transistors | R-PSSO-G2 | 13 ns | 100ns | 60 ns | 22 ns | 12mA | 25V | SILICON | DRAIN | SWITCHING | 60V | -4V | 2.5W Ta 44W Tc | 48A | -60V | P-Channel | 900pF @ 25V | 135m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 27nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| CMPDM302PH TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2010 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmpdm302phtr-datasheets-8999.pdf | SOT-23-3 Flat Leads | 10 Weeks | EAR99 | compliant | YES | Other Transistors | Single | 30V | 350mW Ta | 2.4A | P-Channel | 800pF @ 10V | 91m Ω @ 1.2A, 4.5V | 1.4V @ 250μA | 2.4A Ta | 9.6nC @ 5V | 2.5V 4.5V | 12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4936NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-ntmfs4936nt1g-datasheets-9016.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | Single | 43W | 1 | FET General Purpose Power | 10.4 ns | 19ns | 8 ns | 29 ns | 19.5A | 20V | SILICON | DRAIN | SWITCHING | 920mW Ta 43W Tc | 79A | 96.8 mJ | 30V | N-Channel | 3044pF @ 15V | 3.8m Ω @ 30A, 10V | 2.2V @ 250μA | 11.6A Ta 79A Tc | 43nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| DMT6010LFG-7 | Diodes Incorporated | $0.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt6010lfg7-datasheets-9070.pdf | 8-PowerVDFN | 2.09nF | 23 Weeks | 72.007789mg | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 5.7 ns | 4.3ns | 9.7 ns | 23.4 ns | 30A | 20V | 2.2W Ta 41W Tc | 60V | N-Channel | 2090pF @ 30V | 7.5m Ω @ 20A, 10V | 2V @ 250μA | 13A Ta 30A Tc | 41.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTFS4823NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-nvtfs4823nwftag-datasheets-1821.pdf | 8-PowerWDFN | 3.15mm | 750μm | 3.15mm | Lead Free | 5 | 23 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | 8 | Single | 21W | 1 | FET General Purpose Power | S-PDSO-F5 | 12 ns | 22ns | 4 ns | 14 ns | 30A | 20V | SILICON | DRAIN | 3.1W Ta 21W Tc | 30V | N-Channel | 750pF @ 12V | 10.5m Ω @ 15A, 10V | 2.5V @ 250μA | 13A Ta | 6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI4403CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4403cdyt1ge3-datasheets-8898.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 14 Weeks | 506.605978mg | No SVHC | 15.5mOhm | 8 | Tin | No | 1 | 2.5W | 1 | 8-SO | 2.38nF | 7 ns | 18ns | 41 ns | 108 ns | 13.4A | 8V | 20V | -400mV | 5W Tc | 15.5mOhm | 20V | P-Channel | 2380pF @ 10V | 15.5mOhm @ 9A, 4.5V | 1V @ 250μA | 13.4A Tc | 90nC @ 8V | 15.5 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| RTF020P02TL | ROHM Semiconductor | $0.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | -20V | -2A | 3-SMD, Flat Lead | Lead Free | 3 | No SVHC | 165MOhm | 3 | yes | EAR99 | No | e2 | TIN COPPER | DUAL | 260 | 3 | Single | 10 | 800mW | 1 | Other Transistors | 12 ns | 15ns | 12 ns | 40 ns | 2A | 12V | 20V | SILICON | SWITCHING | 2V | 800mW Ta | 2A | -30V | P-Channel | 640pF @ 10V | 2 V | 85m Ω @ 2A, 4.5V | 2V @ 1mA | 2A Ta | 7nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| CMUDM8004 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmudm8004trpbfree-datasheets-9103.pdf | SOT-523 | 20 Weeks | YES | Other Transistors | Single | 30V | 250mW Ta | 0.45A | P-Channel | 55pF @ 25V | 1.1 Ω @ 430mA, 4.5V | 1V @ 250μA | 450mA Ta | 0.88nC @ 4.5V | 1.8V 4.5V | 8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7M17-80EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk7m1780ex-datasheets-8754.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | YES | SINGLE | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 79W Tc | 43A | 173A | 0.017Ohm | 47.4 mJ | N-Channel | 2031pF @ 25V | 17m Ω @ 10A, 10V | 4V @ 1mA | 43A Tc | 29.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN025-100D,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn025100d118-datasheets-8696.pdf&product=nexperiausainc-psmn025100d118-6835493 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 150W | 1 | Not Qualified | R-PSSO-G2 | 47A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 150W Tc | 188A | 0.025Ohm | 260 mJ | N-Channel | 2600pF @ 25V | 25m Ω @ 25A, 10V | 4V @ 1mA | 47A Tc | 61nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BUK7M6R3-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk7m6r340ex-datasheets-8744.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | YES | SINGLE | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 79W Tc | 70A | 319A | 0.0063Ohm | 58.8 mJ | N-Channel | 1912pF @ 25V | 6.3m Ω @ 20A, 10V | 4V @ 1mA | 70A Tc | 28.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SK8603190L | Panasonic Electronic Components | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | DEPLETION MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-sk8603190l-datasheets-8735.pdf | 8-PowerSMD, Flat Leads | 4.9mm | 950μm | 5.9mm | 5 | 12 Weeks | 8 | EAR99 | unknown | DUAL | NOT SPECIFIED | Single | NOT SPECIFIED | 19W | 1 | R-PDSO-F5 | 7 ns | 3ns | 4 ns | 34 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 2.7W Ta 19W Tc | 12A | 0.014Ohm | 30V | N-Channel | 1092pF @ 10V | 10m Ω @ 8A, 10V | 3V @ 1.01mA | 12A Ta 19A Tc | 6.3nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| RTQ035P02HZGTR | ROHM Semiconductor | $0.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | 8 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 950mW Ta | P-Channel | 1200pF @ 10V | 65m Ω @ 3.5A, 4.5V | 2V @ 1mA | 3.5A Ta | 10.5nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC0310AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc0310as-datasheets-8790.pdf | 8-PowerWDFN | 3.3mm | 800μm | 3.3mm | 5 | 23 Weeks | 165.33333mg | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | FLAT | 260 | 1 | Single | 30 | 2.4W | 1 | FET General Purpose Power | R-PDSO-F5 | 11 ns | 5ns | 4 ns | 30 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 2.4W Ta 36W Tc | MO-240AA | 0.0043Ohm | 33 mJ | 30V | N-Channel | 3165pF @ 15V | 4.4m Ω @ 19A, 10V | 3V @ 1mA | 19A Ta 21A Tc | 52nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BUK7Y38-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y38100ex-datasheets-8795.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | YES | GULL WING | 4 | 1 | Single | 95W | 1 | 6.6 ns | 9.9ns | 12.6 ns | 22 ns | 30A | 20V | 100V | SILICON | DRAIN | SWITCHING | 95W Tc | MO-235 | 0.038Ohm | 100V | N-Channel | 1720pF @ 25V | 29m Ω @ 5A, 10V | 4V @ 1mA | 30A Tc | 30.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ476EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj476ept1ge3-datasheets-8724.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 45W Tc | 23A | 45A | 0.038Ohm | 16 mJ | N-Channel | 700pF @ 25V | 38m Ω @ 10A, 10V | 2.5V @ 250μA | 23A Tc | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS411ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs411enwt1ge3-datasheets-8818.pdf | PowerPAK® 1212-8W | 12 Weeks | PowerPAK® 1212-8W | 40V | 53.6W Tc | P-Channel | 3191pF @ 25V | 27.3mOhm @ 8A, 10V | 2.5V @ 250μA | 16A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RDD023N50TL | ROHM Semiconductor | $4.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 2A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 20W Tc | 2A | 8A | 5.5Ohm | 21 mJ | N-Channel | 151pF @ 25V | 5.4 Ω @ 1A, 10V | 2V @ 1mA | 2A Tc | 11nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM085P03CV RGG | Taiwan Semiconductor Corporation | $1.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm085p03cvrgg-datasheets-8806.pdf | 8-PowerWDFN | 5 | 20 Weeks | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 50W Tc | 14A | 256A | 0.014Ohm | 79 mJ | P-Channel | 3234pF @ 15V | 8.5m Ω @ 14A, 10V | 2.5V @ 250μA | 64A Tc | 55nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DN2540N3-G-P003 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-dn2540n3g-datasheets-8163.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 5 Weeks | 453.59237mg | EAR99 | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 10 ns | 15ns | 20 ns | 15 ns | 120mA | 20V | SILICON | SWITCHING | 400V | 1W Tc | 5 pF | N-Channel | 300pF @ 25V | 25 Ω @ 120mA, 0V | 120mA Tj | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R4-30MLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-psmn2r430mldx-datasheets-8876.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | 8 | Tin | No | YES | SINGLE | GULL WING | 8 | 1 | 91W | 1 | R-PSSO-G4 | 15 ns | 23ns | 13 ns | 19 ns | 70A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 91W Tc | 0.0032Ohm | 204 mJ | 30V | N-Channel | 3264pF @ 15V | 2.4m Ω @ 25A, 10V | 2.2V @ 1mA | 70A Tc | 51nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI4420BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4420bdyt1e3-datasheets-8758.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 8.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.4W | 1 | FET General Purpose Power | 750mV | 15 ns | 11ns | 12 ns | 40 ns | 9.5A | 20V | SILICON | 3V | 1.4W Ta | 30V | N-Channel | 8.5m Ω @ 13.5A, 10V | 3V @ 250μA | 9.5A Ta | 50nC @ 10V | 4.5V 10V | ±20V |
