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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TSM055N03PQ56 RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm055n03pq56rlg-datasheets-9201.pdf | 8-PowerTDFN | 260 | 30 | 30V | 74W Tc | N-Channel | 1160pF @ 25V | 5.5m Ω @ 20A, 10V | 2.5V @ 250μA | 80A Tc | 11.1nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ420EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqj420ept1ge3-datasheets-9342.pdf | PowerPAK® SO-8 | 1.267mm | 12 Weeks | 1 | 45W | 175°C | PowerPAK® SO-8 | 10 ns | 25 ns | 30A | 20V | 40V | 45W Tc | 8.2mOhm | 40V | N-Channel | 1860pF @ 25V | 10mOhm @ 9.7A, 10V | 2.5V @ 250μA | 30A Tc | 41nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR220TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfu220pbf-datasheets-5110.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 10 Weeks | 1.437803g | 800mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 10 | 2.5W | 1 | FET General Purpose Powers | R-PSSO-G2 | 7.2 ns | 22ns | 13 ns | 19 ns | 4.8A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 200V | N-Channel | 260pF @ 25V | 800m Ω @ 2.9A, 10V | 4V @ 250μA | 4.8A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| RQ3E100ATTB | ROHM Semiconductor | $0.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rq3e100attb-datasheets-9353.pdf | 8-PowerVDFN | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 2W Ta | P-Channel | 1900pF @ 15V | 11.4m Ω @ 10A, 10V | 2.5V @ 1mA | 10A Ta 31A Tc | 42nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHB21N06LT,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/nexperiausainc-phb21n06lt118-datasheets-8632.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | 8541.29.00.75 | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 56W | 1 | R-PSSO-G2 | 7 ns | 88ns | 25 ns | 25 ns | 19A | 15V | 55V | SILICON | DRAIN | SWITCHING | 56W Tc | 76A | 0.075Ohm | 55V | N-Channel | 650pF @ 25V | 70m Ω @ 10A, 10V | 2V @ 1mA | 19A Tc | 9.4nC @ 5V | 5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||
| SIRA10BDP-T1-GE3 | Vishay Siliconix | $1.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira10bdpt1ge3-datasheets-9334.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 5W Ta 43W Tc | N-Channel | 1710pF @ 15V | 3.6mOhm @ 10A, 10V | 2.4V @ 250μA | 30A Ta 60A Tc | 36.2nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SVD2955T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntd2955t4g-datasheets-9712.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 22 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 55W Tj | 12A | 18A | 0.18Ohm | 216 mJ | P-Channel | 750pF @ 25V | 180m Ω @ 6A, 10V | 4V @ 250μA | 12A Ta | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR220TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfu220pbf-datasheets-5110.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 800mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 10 | 2.5W | 1 | FET General Purpose Powers | R-PSSO-G2 | 7.2 ns | 22ns | 13 ns | 19 ns | 4.8A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 200V | N-Channel | 260pF @ 25V | 800m Ω @ 2.9A, 10V | 4V @ 250μA | 4.8A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SISA26DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sisa26dnt1ge3-datasheets-9435.pdf | PowerPAK® 1212-8S | 1.17mm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.6W | 150°C | 9 ns | 16 ns | 29.1A | 39W Tc | 25V | N-Channel | 2247pF @ 10V | 2.65m Ω @ 15A, 10V | 2.5V @ 250μA | 60A Tc | 44nC @ 10V | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDME820NZT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 6-PowerUFDFN | 1.6mm | 500μm | 1.6mm | Lead Free | 3 | 16 Weeks | 30mg | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 2.1W | 1 | FET General Purpose Power | S-PDSO-N3 | 9 ns | 5ns | 5 ns | 19 ns | 9A | 12V | SILICON | DRAIN | SWITCHING | 2.1W Ta | 9A | 20V | N-Channel | 865pF @ 10V | 18m Ω @ 9A, 4.5V | 1V @ 250μA | 9A Ta | 8.5nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| TSM090N03CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | NOT SPECIFIED | NOT SPECIFIED | 30V | 40W Tc | N-Channel | 750pF @ 25V | 9m Ω @ 16A, 10V | 2.5V @ 250μA | 50A Tc | 45nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17578Q5AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd17578q5at-datasheets-3557.pdf | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 6 Weeks | 5.9mOhm | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | AVALANCHE RATED | Copper, Tin | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | CSD17578 | Single | NOT SPECIFIED | 1 | 4 ns | 22ns | 2 ns | 17 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.1W Ta 42W Tc | 16A | 132A | 75 pF | 23 mJ | N-Channel | 1510pF @ 15V | 6.9m Ω @ 10A, 10V | 1.9V @ 250μA | 25A Ta | 22.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPS70R600P7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips70r600p7sakma1-datasheets-9310.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 700V | 43W Tc | N-Channel | 364pF @ 400V | 600m Ω @ 1.8A, 10V | 3.5V @ 90μA | 8.5A Tc | 10.5nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6009LPS-13 | Diodes Incorporated | $4.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerTDFN | 22 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 2.8W Ta 136W Tc | N-Channel | 1925pF @ 30V | 10m Ω @ 20A, 10V | 2V @ 250μA | 11.76A Ta 89.5A Tc | 15.6nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4447DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4447dyt1e3-datasheets-8864.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.1W | 1 | Other Transistors | 8 ns | 12ns | 38 ns | 74 ns | -3.3A | 16V | SILICON | SWITCHING | 40V | 1.1W Ta | 30A | 0.054Ohm | -40V | P-Channel | 805pF @ 20V | 72m Ω @ 4.5A, 15V | 2.2V @ 250μA | 3.3A Ta | 14nC @ 4.5V | 15V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| RQ6E045RPTR | ROHM Semiconductor | $1.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rq6e045rptr-datasheets-9284.pdf | SOT-23-6 Thin, TSOT-23-6 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 950mW Ta | P-Channel | 1350pF @ 10V | 35m Ω @ 4.5A, 10V | 2.5V @ 1mA | 4.5A Ta | 14nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD5865NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvd5865nlt4g-datasheets-9132.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 16 Weeks | 4 | LIFETIME (Last Updated: 3 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | 4 | Single | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.4 ns | 12.4ns | 4.4 ns | 26 ns | 10A | 20V | SILICON | DRAIN | 60V | 60V | 3.1W Ta 71W Tc | 38A | 203A | 36 mJ | N-Channel | 1400pF @ 25V | 16m Ω @ 19A, 10V | 2V @ 250μA | 10A Ta 46A Tc | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| RUQ050N02HZGTR | ROHM Semiconductor | $0.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | 8 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 950mW Ta | N-Channel | 900pF @ 10V | 30m Ω @ 5A, 4.5V | 1V @ 1mA | 5A Ta | 12nC @ 4.5V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MVSF2N02ELT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-mvsf2n02elt1g-datasheets-9211.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 2 Weeks | 1.437803g | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | AEC-Q101 | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 6 ns | 95ns | 125 ns | 28 ns | 2.8A | 8V | SILICON | SWITCHING | 20V | 20V | 1.25W Ta | 5A | 0.085Ohm | N-Channel | 150pF @ 5V | 85m Ω @ 3.6A, 4.5V | 1V @ 250μA | 2.8A Ta | 3.5nC @ 4V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SQS840EN-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs840ent1ge3-datasheets-9229.pdf | PowerPAK® 1212-8 | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 7.6 ns | 9.4ns | 6.4 ns | 21.6 ns | 12A | 20V | 40V | 33W Tc | N-Channel | 1031pF @ 20V | 20m Ω @ 7.5A, 10V | 2.5V @ 250μA | 12A Tc | 22.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7772DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7772dpt1ge3-datasheets-9107.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 13MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 30 | 3.9W | 1 | FET General Purpose Power | R-PDSO-C5 | 35.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 3.9W Ta 29.8W Tc | 50A | 30V | N-Channel | 1084pF @ 15V | 2.5 V | 13m Ω @ 15A, 10V | 2.5V @ 250μA | 35.6A Tc | 28nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| PSMN2R9-25YLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn2r925ylc115-datasheets-9089.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4.1MOhm | 4 | HIGH RELIABILITY | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 92W | 1 | 19.5 ns | 19ns | 13 ns | 32 ns | 100A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 92W Tc | MO-235 | 25V | N-Channel | 2083pF @ 12V | 3.15m Ω @ 25A, 10V | 1.95V @ 1mA | 100A Tc | 33nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| DMTH6016LFDFWQ-7R | Diodes Incorporated | $0.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth6016lfdfwq7r-datasheets-8964.pdf | 6-UDFN Exposed Pad | 19 Weeks | e3 | Matte Tin (Sn) | 60V | 1.06W Ta | N-Channel | 925pF @ 30V | 18m Ω @ 10A, 10V | 3V @ 250μA | 9.4A Ta | 15.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7222-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk722255a118-datasheets-9207.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 103W | 1 | R-PSSO-G2 | 15 ns | 74ns | 40 ns | 70 ns | 48A | 20V | 55V | SILICON | DRAIN | SWITCHING | 103W Tc | 0.022Ohm | 160 mJ | 55V | N-Channel | 1597pF @ 25V | 22m Ω @ 25A, 10V | 4V @ 1mA | 48A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIR836DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sir836dpt1ge3-datasheets-9286.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 22.5MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 14 ns | 19ns | 11 ns | 17 ns | 21A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.9W Ta 15.6W Tc | 50A | 5 mJ | 40V | N-Channel | 600pF @ 20V | 1.2 V | 19m Ω @ 10A, 10V | 2.5V @ 250μA | 21A Tc | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI3459BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si3459bdvt1ge3-datasheets-5068.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 216MOhm | 6 | yes | EAR99 | No | e4 | Silver (Ag) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | 5 ns | 12ns | 10 ns | 18 ns | -2.9A | 20V | SILICON | SWITCHING | 60V | -3V | 3.3W Tc | 0.0022A | 30 pF | P-Channel | 350pF @ 30V | -3 V | 216m Ω @ 2.2A, 10V | 3V @ 250μA | 2.9A Tc | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| TSM150P04LCS RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm150p04lcsrlg-datasheets-9086.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | 40V | 12.5W Tc | P-Channel | 2783pF @ 20V | 15m Ω @ 9A, 10V | 2.5V @ 250μA | 22A Tc | 48nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD18N06LT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntd18n06lt4g-datasheets-9113.pdf | 60V | 18A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 7 Weeks | No SVHC | 54mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 55W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.9 ns | 79ns | 38 ns | 19 ns | 18A | 15V | SILICON | DRAIN | SWITCHING | 1.8V | 2.1W Ta 55W Tj | 54A | 72 mJ | 60V | N-Channel | 675pF @ 25V | 65m Ω @ 9A, 5V | 2V @ 250μA | 18A Ta | 22nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||
| STD96N3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std96n3llh6-datasheets-9121.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4.2MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | SINGLE | GULL WING | STD96 | 70W | 1 | FET General Purpose Powers | R-PSSO-G2 | 19 ns | 91ns | 23.4 ns | 24.5 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 70W Tc | 150 mJ | 30V | N-Channel | 2200pF @ 25V | 4.2m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 20nC @ 4.5V | 5.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TPH3R704PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 12 Weeks | 8 | 8-SOP Advance (5x5) | 2.5nF | 92A | 40V | 960mW Ta 81W Tc | N-Channel | 2500pF @ 20V | 3.7mOhm @ 46A, 10V | 2.4V @ 0.2mA | 92A Tc | 27nC @ 10V | 3.7 mΩ | 4.5V 10V | ±20V |
